2n3906.pdf

2N3906
2N3906
Si-Epitaxial-Planar Switching Transistors
Si-Epitaxial-Planar Schalttransistoren
PNP
PNP
Version 2006-09-12
Power dissipation
Verlustleistung
18
9
16
CBE
2 x 2.54
Dimensions - Maße [mm]
625 mW
Plastic case
Kunststoffgehäuse
TO-92
(10D3)
Weight approx. – Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
2N3906
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
B open
- VCEO
40 V
Collector-Base-voltage – Kollektor-Basis-Spannung
E open
- VCBO
40 V
Emitter-Base-voltage – Emitter-Basis-Spannung
C open
- VEBO
5V
Power dissipation – Verlustleistung
Ptot
625 mW 1)
Collector current – Kollektorstrom (dc)
- IC
200 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
60
80
100
60
30
–
–
–
–
–
–
–
300
–
–
–
–
–
–
0.25 V
0.40 V
0.65 V
–
–
–
0.85 V
0.95 V
DC current gain – Kollektor-Basis-Stromverhältnis 2)
-
IC
IC
IC
IC
IC
=
=
=
=
=
0.1 mA,
1 mA,
10 mA,
50 mA,
100 mA,
-
VCE
VCE
VCE
VCE
VCE
=
=
=
=
=
1
1
1
1
1
V
V
V
V
V
hFE
hFE
hFE
hFE
hFE
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
- IC = 10 mA, - IB = 1 mA
- IC = 50 mA, - IB = 5 mA
- VCEsat
- VCEsat
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2)
- IC = 10 mA, - IB = 1 mA
- IC = 50 mA, - IB = 5 mA
1
2
- VBEsat
- VBEsat
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
2N3906
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
- ICBX
–
–
50 nA
- IEBV
–
–-
50 nA
fT
250 MHz
–
–
CCBO
–
–
4.5 pF
CEBO
–
–
10 pf
F
–
–
4 dB
- VCC = 3 V, - VBE = 0.5 V
- IC = 10 mA, - IB1 = 1mA
td
–
–
35 ns
tr
–
–
35 ns
- VCC = 3 V, - IC = 10 mA,
- IB1 = - IB2 = 1 mA
ts
–
–
225 ns
tf
–
–
75 ns
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
- VCE = 30 V, - VEB = 3 V
Emitter-Base cutoff current – Emitter-Basis-Reststrom
- VCE = 30 V, - VEB = 3 V
Gain-Bandwidth Product – Transitfrequenz
- IC = 10 mA, - VCE = 20 V, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 5 V, IE = ie = 0, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 100 µA, RG = 1 kΩ, f = 1 kHz
Switching times – Schaltzeiten (between 10% and 90% levels)
delay time
rise time
storage time
fall time
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
1
2
RthA
< 200 K/W 1)
2N3904
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
http://www.diotec.com/
© Diotec Semiconductor AG
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