2n4403.pdf

2N4403
2N4403
General Purpose Si-Epitaxial Planar Transistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
PNP
PNP
Version 2006-10-17
Power dissipation
Verlustleistung
18
9
16
CBE
2 x 2.54
Dimensions - Maße [mm]
625 mW
Plastic case
Kunststoffgehäuse
TO-92
(10D3)
Weight approx. – Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
2N4403
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
B open
- VCEO
40 V
Collector-Base-voltage – Kollektor-Basis-Spannung
E open
- VCBO
40 V
Emitter-Base-voltage – Emitter-Basis-Spannung
C open
- VEB0
5V
Power dissipation – Verlustleistung
Ptot
625 mW 1)
Collector current – Kollektorstrom (dc)
- IC
600 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
hFE
hFE
hFE
hFE
hFE
30
60
100
100
20
–
–
–
–
–
–
–
–
300
–
Small signal current gain – Kleinsignal-Stromverstärkung
hfe
60
–
500
Input impedance – Eingangs-Impedanz
hie
1.5 kΩ
–
15 kΩ
Output admittance – Ausgangs-Leitwert
hoe
1 µS
–
30 µS
Reverse voltage transfer ratio – Spannungsrückwirkung
hre
–
8*10-4
DC current gain – Kollektor-Basis-Stromverhältnis 2)
-
IC
IC
IC
IC
IC
=
=
=
=
=
0.1 mA,
1 mA,
10 mA,
150 mA,
500 mA,
-
VCE
VCE
VCE
VCE
VCE
=
=
=
=
=
1V
1V
1V
2V
2V
h-Parameters at/bei - VCE = 10 V, - IC = 1 mA, f = 1 kHz
1
2
-4
0.1*10
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
2N4403
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
–
–
–
–
0.40 V
0.75 V
- VBEsat
- VBEsat
0.75 V
–
–
–
0.95 V
1.3 V
- ICEX
–
–
100 nA
- IEBV
–
–-
100 nA
fT
200 MHz
–
–
CCBO
–
–
8.5 pF
CEBO
–
–
30 pf
td
–
–
15 ns
tr
–
–
20 ns
ts
–
–
225 ns
tf
–
–
30 ns
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
- IC = 150 mA, - IB = 15 mA
- IC = 500 mA, - IB = 50 mA
- VCEsat
- VCEsat
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2)
- IC = 150 mA, - IB = 15 mA
- IC = 500 mA, - IB = 50 mA
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
- VCE = 35 V, - VEB = 0,4 V
Emitter-Base cutoff current – Emitter-Basis-Reststrom
- VCE = 35 V, - VEB = 0,4 V
Gain-Bandwidth Product – Transitfrequenz
- IC = 20 mA, - VCE = 10 V, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 5 V, IE = ie = 0, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Switching times – Schaltzeiten (between 10% and 90% levels)
delay time
rise time
storage time
- ICon = 10 mA
- IBon = 1 mA
IBoff = 1 mA
fall time
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
2
1
2
RthA
< 420 K/W 1)
2N4401
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
http://www.diotec.com/
© Diotec Semiconductor AG
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