2N5400 / 2N5401 2N5400 / 2N5401 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2006-06-17 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case Kunststoffgehäuse TO-92 (10D3) Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) 2N5400 2N5401 Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open - VCE0 120 V 150 V Collector-Base-voltage – Kollektor-Basis-Spannung E open - VCBO 130 V 160 V Emitter-Base-voltage – Emitter-Basis-Spannung C open - VEBO 5V Power dissipation – Verlustleistung Ptot 625 mW 1) Collector current – Kollektorstrom (dc) - IC 600 mA Peak Collector current – Kollektor-Spitzenstrom - ICM 1A Base current – Basisstrom - IB 100 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis 2) - IC = 1 mA, - IC = 10 mA, - IC = 50 mA, - VCE = 5 V - VCE = 5 V - VCE = 5 V 2N5400 hFE hFE hFE 30 40 40 – – – – 180 – - IC = 1 mA, - IC = 10 mA, - IC = 50 mA, - VCE = 5 V - VCE = 5 V - VCE = 5 V 2N5401 hFE hFE hFE 50 60 50 – – – – 240 – Collector-Base cutoff current – Kollektor-Basis-Reststrom 1 2 - VCB = 100 V, (E open) - VCB = 120 V, (E open) 2N5400 2N5401 - ICBO - ICBO – – – – 100 nA 50 nA - VCB = 100 V, Tj = 100°C, (E open) - VCB = 120 V, Tj = 100°C, (E open) 2N5400 2N5401 - ICBO - ICBO – – – – 100 µA 50 µA Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 2N5400 / 2N5401 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. – –- 50 nA - VCEsat - VCEsat – – – – 0.2 V 0.5 V - VBEsat - VBEsat – – – – 1.0 V 1.0 V fT 100 MHz – 400 MHz CCBO – – 6 pF F F – – – – – 8 dB Emitter-Base-cutoff current – Emitter-Basis-Reststrom - VEB = 3 V, (C open) - IEBO Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2) - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA Base-Emitter saturation voltage – Basis-Sättigungsspannung 2) - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 50 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE =ie = 0, f = 1 MHz Noise figure – Rauschzahl - VCE = 5 V, - IC = 200 µA, RS = 10 Ω, f = 1 kHz 2N5400 2N5401 Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 200 K/W 1) Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren 2N5550 / 2N5551 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [°C] Power dissipation versus ambient temperature 1) Verlustleistung in Abh. von d. Umgebungstemp.1) 2 1 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden http://www.diotec.com/ © Diotec Semiconductor AG