2n5400.pdf

2N5400 / 2N5401
2N5400 / 2N5401
General Purpose Si-Epitaxial Planar Transistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
PNP
PNP
Version 2006-06-17
Power dissipation
Verlustleistung
18
9
16
CBE
2 x 2.54
Dimensions - Maße [mm]
625 mW
Plastic case
Kunststoffgehäuse
TO-92
(10D3)
Weight approx. – Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
2N5400
2N5401
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
B open
- VCE0
120 V
150 V
Collector-Base-voltage – Kollektor-Basis-Spannung
E open
- VCBO
130 V
160 V
Emitter-Base-voltage – Emitter-Basis-Spannung
C open
- VEBO
5V
Power dissipation – Verlustleistung
Ptot
625 mW 1)
Collector current – Kollektorstrom (dc)
- IC
600 mA
Peak Collector current – Kollektor-Spitzenstrom
- ICM
1A
Base current – Basisstrom
- IB
100 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis 2)
- IC = 1 mA,
- IC = 10 mA,
- IC = 50 mA,
- VCE = 5 V
- VCE = 5 V
- VCE = 5 V
2N5400
hFE
hFE
hFE
30
40
40
–
–
–
–
180
–
- IC = 1 mA,
- IC = 10 mA,
- IC = 50 mA,
- VCE = 5 V
- VCE = 5 V
- VCE = 5 V
2N5401
hFE
hFE
hFE
50
60
50
–
–
–
–
240
–
Collector-Base cutoff current – Kollektor-Basis-Reststrom
1
2
- VCB = 100 V, (E open)
- VCB = 120 V, (E open)
2N5400
2N5401
- ICBO
- ICBO
–
–
–
–
100 nA
50 nA
- VCB = 100 V, Tj = 100°C, (E open)
- VCB = 120 V, Tj = 100°C, (E open)
2N5400
2N5401
- ICBO
- ICBO
–
–
–
–
100 µA
50 µA
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
2N5400 / 2N5401
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
–
–-
50 nA
- VCEsat
- VCEsat
–
–
–
–
0.2 V
0.5 V
- VBEsat
- VBEsat
–
–
–
–
1.0 V
1.0 V
fT
100 MHz
–
400 MHz
CCBO
–
–
6 pF
F
F
–
–
–
–
–
8 dB
Emitter-Base-cutoff current – Emitter-Basis-Reststrom
- VEB = 3 V, (C open)
- IEBO
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
- IC = 10 mA, - IB = 1 mA
- IC = 50 mA, - IB = 5 mA
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
- IC = 10 mA, - IB = 1 mA
- IC = 50 mA, - IB = 5 mA
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 50 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE =ie = 0, f = 1 MHz
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 200 µA,
RS = 10 Ω, f = 1 kHz
2N5400
2N5401
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 200 K/W 1)
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
2N5550 / 2N5551
120
[%]
100
80
60
40
20
Ptot
0
0
TA
50
100
150
[°C]
Power dissipation versus ambient temperature 1)
Verlustleistung in Abh. von d. Umgebungstemp.1)
2
1
2
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
http://www.diotec.com/
© Diotec Semiconductor AG
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