DATASHEET

HCS139MS
Radiation Hardened Dual
2-to-4 Line Decoder/Demultiplexer
September 1995
Features
Pinouts
• 3 Micron Radiation Hardened SOS CMOS
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16, LEAD FINISH C
TOP VIEW
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/
Bit-Day (Typ)
12
• Dose Rate Survivability: >1 x 10
RAD (Si)/s
• Dose Rate Upset >1010 RAD (Si)/s, 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
E1 1
1
16 VCC
A0 1
2
15 2 E
A1 1
3
14 2 A0
Y0 1
4
13 2 A1
Y1 1
5
12 2 Y0
Y2 1
6
11 2 Y1
Y3 1
7
10 2 Y2
GND
8
9 2 Y3
• Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
• Input Current Levels Ii ≤ 5µA at VOL, VOH
16 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F16, LEAD FINISH C
TOP VIEW
Description
The Intersil HCS139MS is a Radiation Hardened 2-to-4 line
Decoder/Demultiplexer with an active low enable (E). Data
on the select inputs (A0, A1) cause one of the four normally
high outputs to go to a low logic level. The Demultiplexing
function is performed by using the enable input as the data
input.
If the enable input is high all four outputs remain high. For
demultiplexer operation the enable input is the data input.
The enable input also functions as a chip select when these
devices are cascaded.
E1
1
16
VCC
A0 1
2
15
2E
A1 1
3
14
2 A0
Y0 1
4
13
2 A1
Y1 1
5
12
2 Y0
Y2 1
6
11
2 Y1
Y3 1
7
10
2 Y2
GND
8
9
2 Y3
The HCS139MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS139MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
PART NUMBER
TEMPERATURE RANGE
SCREENING LEVEL
PACKAGE
HCS139DMSR
-55oC to +125oC
Intersil Class S Equivalent
16 Lead SBDIP
HCS139KMSR
-55oC to +125oC
Intersil Class S Equivalent
16 Lead Ceramic Flatpack
+25oC
Sample
16 Lead SBDIP
HCS139K/Sample
+25oC
Sample
16 Lead Ceramic Flatpack
HCS139HMSR
+25oC
Die
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
153
DB NA
HCS139D/Sample
Spec Number
File Number
518832
3560.1
HCS139MS
Functional Diagram
4(12)
Y0
2(14)
A0
5(11)
Y1
3(13)
A1
6(10)
Y2
7(9)
1(15)
Y3
E
TRUTH TABLE
INPUTS ENABLE SELECT
OUTPUTS
E
A1
A0
Y3
Y2
Y1
Y0
0
0
0
1
1
1
0
0
0
1
1
1
0
1
0
1
0
1
0
1
1
0
1
1
0
1
1
1
1
X
X
1
1
1
1
Logic 1 = High
Logic 0 = Low
X = Immaterial
Spec Number
154
518832
Specifications HCS139MS
Absolute Maximum Ratings
Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance
θJA
θJC
SBDIP Package. . . . . . . . . . . . . . . . . . . .
73oC/W
24oC/W
Ceramic Flatpack Package . . . . . . . . . . . 114oC/W
29oC/W
Maximum Package Power Dissipation at +125oC Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/oC
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/oC
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC
Input Rise and Fall Times at VCC = 4.5V (TR, TF) . . . . .100ns Max
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . VCC to 70% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . .0V to 30% of VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Supply Current
Output Current
(Sink)
Output Current
(Source)
Output Voltage Low
Output Voltage High
Input Leakage
Current
Noise Immunity
Functional Test
GROUP
A SUBGROUPS
TEMPERATURE
MIN
MAX
UNITS
1
+25oC
-
40
µA
2, 3
+125oC, -55oC
-
750
µA
1
+25oC
7.2
-
mA
2, 3
+125oC, -55oC
6.0
-
mA
1
+25oC
-7.2
-
mA
2, 3
+125oC, -55oC
-6.0
-
mA
VCC = 4.5V, VIH = 3.15V,
IOL = 50µA, VIL =1.35V
1, 2, 3
+25oC, +125oC, -55oC
-
0.1
V
VCC = 5.5V, VIH = 3.85V,
IOL = 50µA, VIL = 1.65V
1, 2, 3
+25oC, +125oC, -55oC
-
0.1
V
VCC = 4.5V, VIH = 3.15V,
IOH = -50µA, VIL =1.35V
1, 2, 3
+25oC, +125oC, -55oC
VCC
-0.1
-
V
VCC = 5.5V, VIH = 3.85V,
IOH = -50µA, VIL = 1.65V
1, 2, 3
+25oC, +125oC, -55oC
VCC
-0.1
-
V
VCC = 5.5V, VIN = VCC or
GND
1
+25oC
-
±0.5
µA
2, 3
+125oC, -55oC
-
±5.0
µA
7, 8A, 8B
+25oC, +125oC, -55oC
-
-
-
(NOTE 1)
CONDITIONS
SYMBOL
ICC
IOL
IOH
VOL
VOH
IIN
FN
VCC = 5.5V,
VIN = VCC or GND
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V,
(Note 2)
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V, (Note 2)
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, (Note 3)
LIMITS
NOTES:
1. All voltages reference to device GND.
2. Force/Measure functions may be interchanged.
3. For functional tests VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
Spec Number
155
518832
Specifications HCS139MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Propagation Delay
A0, A1 to Output
Propagation Delay
Enable to Output
(NOTES 1, 2)
CONDITIONS
SYMBOL
TPHL,
TPLH
GROUP
A SUBGROUPS
TEMPERATURE
MIN
MAX
UNITS
9
+25oC
2
24
ns
10, 11
+125oC, -55oC
2
27
ns
9
+25oC
2
24
ns
10, 11
+125oC, -55oC
2
27
ns
VCC = 4.5V
TPHL,
TPLH
VCC = 4.5V
LIMITS
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
SYMBOL
Capacitance Power
Dissipation
CPD
Input Capacitance
Output Transition
Time
CIN
TTHL
TTLH
CONDITIONS
NOTES
TEMPERATURE
MIN
MAX
UNITS
1
+25oC
-
75
pF
1
+125oC, -55oC
-
156
pF
1
+25oC
-
10
pF
1
+125oC, -55oC
-
10
pF
1
+25oC
1
15
ns
1
+125oC, -55oC
1
22
ns
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
VCC = 4.5V, VIH = 4.5V,
VIL = 0V,
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K RAD
LIMITS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
MIN
MAX
UNITS
Supply Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25oC
-
0.75
mA
Output Current (Sink)
IOL
VCC = 4.5V, VOUT = 0.4V
+25oC
6.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VOUT = VCC -0.4V
+25oC
-6.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V, VIH = 3.15V, VIL = 1.35V,
IOL = 50µA
+25oC
-
0.1
V
VCC = 5.5V, VIH = 3.85V, VIL = 1.65V,
IOL = 50µA
+25oC
-
0.1
V
VCC = 4.5V, VIH = 3.15, VIL = 1.35V,
IOH = -50µA
+25oC
VCC
-0.1
-
V
VCC = 5.5V, VIH = 3.85, VIL = 1.65V,
IOH = -50µA
+25oC
VCC
-0.1
-
V
Output Voltage High
VOH
Spec Number
156
518832
Specifications HCS139MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
200K RAD
LIMITS
PARAMETER
(NOTES 1, 2)
CONDITIONS
SYMBOL
TEMPERATURE
MIN
MAX
UNITS
-
±5
µA
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25oC
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, (Note 3)
+25oC
-
-
-
Propagation Delay
A0, A1 to Output
TPHL,
TPLH
VCC = 4.5V
+25oC
2
27
ns
Propagation Delay
Enable to Output
TPHL,
TPLH
VCC = 4.5V
+25oC
2
27
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC
3. For functional tests VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC)
GROUP B
SUBGROUP
DELTA LIMIT
ICC
5
12µA
IOL/IOH
5
-15% of 0 Hour
PARAMETER
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
METHOD
GROUP A SUBGROUPS
Initial Test (Preburn-In)
100%/5004
1, 7, 9
ICC, IOL/H, IOZL/H
Interim Test I (Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H, IOZL/H
Interim Test II (Postburn-In)
100%/5004
1, 7, 9
ICC, IOL/H, IOZL/H
PDA
100%/5004
1, 7, 9, Deltas
Interim Test III (Postburn-In)
100%/5004
1, 7, 9
PDA
100%/5004
1, 7, 9, Deltas
Final Test
100%/5004
2, 3, 8A, 8B, 10, 11
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Subgroup B-5
Sample/5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroup B-6
Sample/5005
1, 7, 9
Sample/5005
1, 7, 9
Group A (Note 1)
Group B
Group D
READ AND RECORD
ICC, IOL/H, IOZL/H
Subgroups 1, 2, 3, 9, 10, 11
NOTE:
1. Alternate Group A testing in accordance with Method 5005 of Mil-Std-883 may be exercised.
Spec Number
157
518832
Specifications HCS139MS
TABLE 7. TOTAL DOSE IRRADIATION
TEST
CONFORMANCE
GROUPS
Group E Subgroup 2
READ AND RECORD
METHOD
PRE RAD
POST RAD
PRE RAD
POST RAD
5005
1, 7, 9
Table 4
1, 9
Table 4 (Note 1)
NOTE:
1. Except FN test which will be performed 100% go/no-go.
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS
OSCILLATOR
OPEN
GROUND
1/2 VCC = 3V ± 0.5V
VCC = 6V ± 0.5V
50kHz
25kHz
-
16
-
-
-
1 - 3, 13 - 16
-
-
4 - 7, 9 - 12
16
2, 14
3, 13
STATIC I BURN-IN TEST CONNECTIONS (Note1)
4 -7, 9 - 12
1 - 3, 8, 13 - 15
STATIC II BURN-IN CONNECTIONS (Note1)
4 - 7, 9 - 12
8
DYNAMIC BURN-IN CONNECTIONS (Note2)
-
1, 8, 15
NOTES:
1. Each pin except VCC and GND will have a resistor of 10KΩ ± 5% for static burn-in
2. Each pin except VCC and GND will have a resistor of 680Ω ± 5% for dynamic burn-in
TABLE 9. IRRADIATION TEST CONNECTIONS
OPEN
GROUND
VCC = 5V ± 0.5V
4 - 7, 9 - 12
8
1 - 3, 13 - 16
NOTE: Each pin except VCC and GND will have a resistor of 47KΩ ± 5% for irradiation testing.
Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number
158
518832
HCS139MS
Intersil Space Level Product Flow - ‘MS’
Wafer Lot Acceptance (All Lots) Method 5007
(Includes SEM)
100% Interim Electrical Test 1 (T1)
GAMMA Radiation Verification (Each Wafer) Method 1019,
4 Samples/Wafer, 0 Rejects
100% Static Burn-In 2, Condition A or B, 24 hrs. min.,
+125oC min., Method 1015
100% Nondestructive Bond Pull, Method 2023
100% Interim Electrical Test 2 (T2)
Sample - Wire Bond Pull Monitor, Method 2011
100% Delta Calculation (T0-T2)
Sample - Die Shear Monitor, Method 2019 or 2027
100% PDA 1, Method 5004 (Notes 1and 2)
100% Internal Visual Inspection, Method 2010, Condition A
100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or
Equivalent, Method 1015
100% Delta Calculation (T0-T1)
100% Temperature Cycle, Method 1010, Condition C,
10 Cycles
100% Interim Electrical Test 3 (T3)
100% Constant Acceleration, Method 2001, Condition per
Method 5004
100% Delta Calculation (T0-T3)
100% PDA 2, Method 5004 (Note 2)
100% PIND, Method 2020, Condition A
100% Final Electrical Test
100% External Visual
100% Fine/Gross Leak, Method 1014
100% Serialization
100% Radiographic, Method 2012 (Note 3)
100% Initial Electrical Test (T0)
100% Static Burn-In 1, Condition A or B, 24 hrs. min.,
+125oC min., Method 1015
100% External Visual, Method 2009
Sample - Group A, Method 5005 (Note 4)
100% Data Package Generation (Note 5)
NOTES:
1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1.
2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the
failures from subgroup 7.
3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004.
4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005.
5. Data Package Contents:
• Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number,
Quantity).
• Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage.
• GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test
equipment, etc. Radiation Read and Record data on file at Intersil.
• X-Ray report and film. Includes penetrometer measurements.
• Screening, Electrical, and Group A attributes (Screening attributes begin after package seal).
• Lot Serial Number Sheet (Good units serial number and lot number).
• Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test.
• The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed
by an authorized Quality Representative.
Spec Number
159
518832
HCS139MS
Propagation Delay Timing Diagram
Propagation Delay Load Circuit
VIH
TEST
POINT
DUT
INPUT
VS
VSS
TPLH
CL
TPHL
RL
CL = 50pF
RL = 500Ω
VOH
VS
OUTPUT
VOL
Transition Timing Diagram
VOH
TTLH
TTHL
80%
VOL
20%
80%
20%
OUTPUT
VOLTAGE LEVELS
PARAMETER
HCS
UNITS
VCC
4.50
V
VIH
4.50
V
VS
2.25
V
VIL
0
V
GND
0
V
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
Spec Number
160
518832
HCS139MS
Die Characteristics
DIE DIMENSIONS:
106 mils x 108 mils x 19 mils 1 mils
METALLIZATION:
Type: SiAl
Metal Thickness: 11kÅ ± 1kÅ
GLASSIVATION:
Type: SiO2
Thickness: 13kÅ ± 2.6kÅ
WORST CASE CURRENT DENSITY:
<2.0 x 105A/cm2
BOND PAD SIZE:
100µm x 100µm
4 mils x 4 mils
Metallization Mask Layout
(15) 2E
(16) VCC
(1) 1E
(2) 1A0
HCS139MS
(14) 2A0
1A1 (3)
(13) 2A1
1Y0 (4)
(12) 2Y0
1Y1 (5)
(11) 2Y1
1Y2 (6)
2Y3 (9)
GND (8)
1Y3 (7)
(10) 2Y2
NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location.
The mask series for the HCS139 is TA14309A.
Spec Number
161
518832
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