Datasheet

MCP MCP ASSEMBLY
F2223-21SH
FEATURES
●High sensitivity
●High S/N ratio
●Wide dynamic range
●Center hole for beam line
●Compact and lightweight
OVERVIEW
APPLICATIONS
This MCP assembly is a suitable detector for an
electron or ion beam in SEM, SIM or Lithography.
It is possible to detect some signal from a sample with
high sensitivity, that can be performed with the
compactness and the center hole of this assembly. It
allows to set this assembly at close position to the
sample and gives better efficiency in the beam
detection.
●Scanning electron microscopy
●Scanning ion microscopy
●Electron lithography
●Mask aligner
●Electron beam measuring system
●Ion scattering spectroscopy
ELECTRON GUN
ELECTRON BEAM
ANODE
ELECTRON BEAM
MCP (2-STAGE)
F2223-21SH
MESH
SECONDARY ELECTRON
(REFLECTING ELECTRON)
SAMPLE
TMCPC0001EB
SECONDARY
ELECTRON
SAMPLE
SPECIFICATIONS
GENERAL
Parameter
MCP Channel Diameter
Number of MCPs
Effective Area
MCP Center Dead Area
Value
12
2
27
8
Unit
µm
—
mm
mm
ELECTRICAL CHARACTERISTICS
(Supply Voltage: 2 kV, Vacuum: 1.3 × 10-4 Pa, Operating Ambient Temperature: +25 °C)
Parameter
Gain (Min.)
Resistance (Typ.)
Dark Current (Max.)
Value
1 × 106
20 to 100
120
Unit
—
MΩ
pA· cm-2
Value
2
0.5
0.5
3
1.3 × 10-4
+10 to +40
150
Unit
kV
kV
kV
kV
Pa
°C
°C
MAXIMUM RATINGS
Parameter
MCP Supply Voltage (Max.)
MCP-Out to Anode Supply Voltage (Max.)
Mesh to MCP-In Supply Voltage
Anode to Substrate Supply Voltage
Operating Vacuum Condition A
Ambient Operating Temperature
Baking Temperature A
ABetter vacuum than 1.3 × 10-4 Pa
41
8.6
MCP (2-STAGE)
10
27
EFFECTIVE AREA
4 × 2.6
PCD* 50.8
56.5
45°
DEAD SPACE 8
MCP CENTER HOLE 6
CENTER PIPE (OUTER 5)
CENTER PIPE (INNER 4)
DIMENSIONAL OUTLINES (Unit: mm)
4× 1
6
1 234
3
1MESH LEAD
2MCP-IN LEAD
3MCP-OUT LEAD
4ANODE LEAD
SUBSTRATE
1.6
TMCPA0002EH
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Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2015 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K.
www.hamamatsu.com
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TMCP1001E04
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MAY 2015 IP
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