datasheet

SKM 200GB125D
( 4 -5 6$ Absolute Maximum Ratings
Symbol Conditions
IGBT
7$3
*-..
7
-..
%
(
4 :. 6$
*.
%
+..
%
= -.
7
*.
A
(
4 -5 6$
-..
%
(
4 :. 6$
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%
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%
(8 4 *5. 6$
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%
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%
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5..
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6$
(
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C...
7
$2;
(8 4 *5. 6$
$2;4- $
7<3
SEMITRANS® 3
Ultra Fast IGBT Modules
!
!;
SKM 200GAL125D
!
!2;
Features
7$3 @ *-.. 7
(8 4 *-5 6$
(8 4 *5. 6$
!2;4- !
4 *. > B
Freewheeling Diode
SKM 200GAR125D
7$$ 4 .. 7> 7<3 ? -. 7>
Inverse Diode
!2;
SKM 200GB125D
Units
(
4 -5 6$
$
(8 4 -5 6$
Values
! " #
$% &$' &
$
'
(
)*+ , )-. ,
Typical Applications*
/ -. 01
2
#
*.. 01
#
3
/ -. 01
!;
(8 4 6$
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4 *. >
(8 4 *5. 6$
Module
)2;,
7
%$ * B
( 4 -5 6$ Characteristics
Symbol Conditions
IGBT
7<3),
$3
7<3 4 7$3
$
min.
typ.
max.
Units
C5
55
5
7
(8 4 -5 6$
.*5
.C5
%
(8 4 -5 6$
*5
*F5
7
*-
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4 %
7<3 4 . 7 7$3 4 7$3
7$3.
(8 4 *-5 6$
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(8 4 -56$
7
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7$3),
$
$
$
4 *5. % 7<3 4 *5 7 (8 4 6$
#B
7$3 4 -5 7<3 4 . 7
4 * ;1
$
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7<3 4 .7 D E-.7
2<
(8 4 6$
),
3
),
2< 4 C G
2< 4 C G
7$$ 4 ..7
$4 *5.%
(8 4 *-5 6$
7<3 4 =*57
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++
+:5
7
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*5
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.:
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I
F5
+
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C-.
-5
J
3
2)8D,
GB
1
GAL
J
<'(
..K
LMN
GAR
04-05-2007 SEI
© by SEMIKRON
SKM 200GB125D
Characteristics
Symbol Conditions
Inverse Diode
7! 4 73$
!
4 *5. %> 7<3 4 . 7
7!.
min.
typ.
max.
Units
(8 4 -5 6$
#B
-
-5
7
(8 4 *-5 6$
#B
*:
(8 4 -5 6$
**
7
*-
(8 4 *-5 6$
!
7
(8 4 -5 6$
:F
(8 4 *-5 6$
®
SEMITRANS 3
H
! 4 *5. %
M 4 55.. %MA
3
7<3 4 . 7> 7$$ 4 .. 7
2)8D,&
22;
Ultra Fast IGBT Modules
7
G
G
(8 4 *-5 6$
-+.
-C
%
A$
J
.-5
LMN
-5
7
Freewheeling Diode
7! 4 73$
SKM 200GB125D
!
4 *5. %> 7<3 4 . 7
7!.
SKM 200GAL125D
(8 4 -5 6$
#B
-
(8 4 *-5 6$
#B
*:
(8 4 -5 6$
**
*-
:F
7
(8 4 *-5 6$
SKM 200GAR125D
!
7
(8 4 -5 6$
(8 4 *-5 6$
H
! 4 *5. %
M 4 55.. %MA
3
7<3 4 . 7> 7$$ 4 .. 7
2)8D,!&
22;
Features
! " #
$% &$' &
$
'
(
)*+ , )-. ,
Typical Applications*
/ -. 01
7
7
7
(8 4 *-5 6$
-+.
-C
%
A$
J
.-5
LMN
Module
$3
2$$OE33O
*5
B D
2)D,
;
0 ;
;
;
-.
(
4 -5 6$
.+5
G
(
4 *-5 6$
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G
..+:
LMN
+
5
-5
5
+-5
This is an electrostatic discharge sensitive device (ESDS), international standard
2
#
*.. 01 IEC 60747-1, Chapter IX.
#
The specifications of our components may not be considered as an assurance of
3
/ -. 01 *component
characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
GB
2
GAL
GAR
04-05-2007 SEI
© by SEMIKRON
SKM 200GB125D
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
2
2
2
2
4*
44+
4C
4*
44+
.
-+
5K
**
..FCC
...:F
...-
0MN
0MN
0MN
0MN
4C
...*5
SKM 200GAL125D
2
2
2
2
4*
44+
4C
4*
44+
*.
F
-.
+
..5+
...+C
..FF
0MN
0MN
0MN
0MN
SKM 200GAR125D
4C
....+
SEMITRANS® 3
Zth(j-c)D
Ultra Fast IGBT Modules
SKM 200GB125D
Features
! " #
$% &$' &
$
'
(
)*+ , )-. ,
Typical Applications*
/ -. 01
2
#
*.. 01
#
3
/ -. 01
GB
3
GAL
GAR
04-05-2007 SEI
© by SEMIKRON
SKM 200GB125D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
04-05-2007 SEI
© by SEMIKRON
SKM 200GB125D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
5
04-05-2007 SEI
© by SEMIKRON
SKM 200GB125D
UL Recognized
File 63 532
$
& 5
<'
6
$
& 5
<%
$
& 5F )P & 5 ,
04-05-2007 SEI
<%2
$
& 5: )P & 5 ,
© by SEMIKRON
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