DATASHEET

CD40106BMS
CMOS Hex Schmitt Triggers
December 1992
Features
Pinout
• High Voltage Type (20V Rating)
CD40106BMS
TOP VIEW
• Schmitt Trigger Action with No External Components
• Hysteresis Voltage (Typ.)
- 0.9V at VDD = 5V
- 2.3V at VDD = 10V
- 3.5V at VDD = 15V
14 VDD
A 1
13 F
G=A 2
B 3
12 L = F
H=B 4
• Noise Immunity Greater than 50%
11 E
C 5
• No Limit on Input Rise and Fall Times
• Low VDD to VSS Current During Slow Input Ramp
10 K = E
I=C 6
9 D
VSS 7
8 J=D
• 100% Tested for Quiescent Current at 20V
• 5V, 10V and 15V Parametric Ratings
• Maximum Input Current of 1µA at 18V Over Full Package Temperature Range; 100nA at 18V and +25oC
Functional Diagram
• Standardized Symmetrical Output Characteristics
1
2
3
4
5
6
9
8
11
10
13
12
A
• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specifications for Description of
‘B’ Series CMOS Devices”
B
Applications
C
• Wave and Pulse Shapers
D
• High Noise Environment Systems
• Monostable Multivibrators
E
G=A
H=B
I=C
J=D
K=E
• Astable Multivibrators
F
Description
CD40106BMS consists of six Schmitt trigger circuits. Each
circuit functions as an inverter with Schmitt trigger action on
the input. The trigger switches at different points for positive
and negative going signals. The difference between the
positive going voltage (VP) and the negative going voltage
(VN) is defined as hysteresis voltage (VH) (see Figure 17).
L=F
Logic Diagram
*
A
1 (3, 5, 9, 11, 13)
The CD40106BMS is supplied in these 14 lead outline
packages:
*
G
2 (4, 6, 8, 10, 12)
VDD
Braze Seal DIP
H4Q
Frit Seal DIP
H1B
Ceramic Flatpack
H3W
*
ALL INPUTS ARE PROTECTED
BY CMOS PROTECTION
NETWORK
VSS
FIGURE 1. 1 OF 6 SCHMITT TRIGGERS
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
7-1327
File Number
3354
Specifications CD40106BMS
Absolute Maximum Ratings
Reliability Information
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for
10s Maximum
Thermal Resistance . . . . . . . . . . . . . . . .
θja
θjc
Ceramic DIP and FRIT Package . . . . . 80oC/W
20oC/W
Flatpack Package . . . . . . . . . . . . . . . . 70oC/W
20oC/W
Maximum Package Power Dissipation (PD) at +125oC
For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW
For TA = +100oC to +125oC (Package Type D, F, K). . . . . . Derate
Linearity at 12mW/oC to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Supply Current
SYMBOL
IDD
CONDITIONS (NOTE 1)
VDD = 20V, VIN = VDD or GND
VDD = 18V, VIN = VDD or GND
Input Leakage Current
IIL
VIN = VDD or GND
VDD = 20
VDD = 18V
Input Leakage Current
IIH
VIN = VDD or GND
VDD = 20
VDD = 18V
LIMITS
GROUP A
SUBGROUPS
TEMPERATURE
MIN
MAX
UNITS
1
+25oC
-
2
µA
2
+125oC
-
200
µA
3
-55oC
-
2
µA
1
+25oC
-100
-
nA
2
+125oC
-1000
-
nA
3
-55oC
-100
-
nA
1
+25oC
-
100
nA
2
+125oC
-
1000
nA
3
-55oC
-
100
nA
-
50
mV
-
V
Output Voltage
VOL15
VDD = 15V, No Load
1, 2, 3
+25oC,
+125oC,
-55oC
Output Voltage
VOH15
VDD = 15V, No Load (Note 2)
1, 2, 3
+25oC, +125oC, -55oC 14.95
Output Current (Sink)
IOL5
VDD = 5V, VOUT = 0.4V
1
+25oC
0.53
-
mA
Output Current (Sink)
IOL10
VDD = 10V, VOUT = 0.5V
1
+25oC
1.4
-
mA
1
+25oC
3.5
-
mA
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 1.5V
Output Current (Source)
IOH5A
VDD = 5V, VOUT = 4.6V
1
+25oC
-
-0.53
mA
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1
+25oC
-
-1.8
mA
1
+25oC
-
-1.4
mA
-
-3.5
mA
-2.8
-0.7
V
0.7
2.8
V
Output Current (Source)
IOH10
VDD = 10V, VOUT = 9.5V
Output Current (Source)
IOH15
VDD = 15V, VOUT = 13.5V
1
+25oC
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10µA
1
+25oC
VSS = 0V, IDD = 10µA
1
+25oC
VDD = 2.8V, VIN = VDD or GND
7
+25oC
VDD = 20V, VIN = VDD or GND
7
+25oC
VDD = 18V, VIN = VDD or GND
8A
+125oC
VDD = 3V, VIN = VDD or GND
8B
P Threshold Voltage
Functional
Positive Trigger
Threshold Voltage
(See Figure 17)
Negative Trigger
Threshold Voltage
(See Figure 17)
VPTH
F
VP5
V
-55oC
1, 2, 3
+25oC,
+125oC, -55oC
2.2
+125oC,
-55oC
3.6
V
VP10
VDD = 10V
1, 2, 3
+25oC,
4.6
7.1
V
VP15
VDD = 15V
1, 2, 3
+25oC, +125oC, -55oC
6.8
10.8
V
-55oC
0.9
2.8
V
2.5
5.2
V
VN5
VDD = 5V
1, 2, 3
+25oC,
VN10
VDD = 10V
1, 2, 3
+25oC, +125oC, -55oC
1, 2, 3
+25oC,
+125oC,
-55oC
4
7.4
V
+125oC,
-55oC
VN15
Hysteresis Voltage
(See Figure 17)
VDD = 5V
VOH > VOL <
VDD/2 VDD/2
VDD = 15V
+125oC,
VH5
VDD = 5V
1, 2, 3
+25oC,
0.3
1.6
V
VH10
VDD = 10V
1, 2, 3
+25oC, +125oC, -55oC
1.2
3.4
V
1, 2, 3
+25oC,
1.6
5.0
V
VH15
VDD = 15V
NOTES: 1. All voltages referenced to device GND, 100% testing being
implemented.
2. Go/No Go test with limits applied to inputs.
7-1328
+125oC,
-55oC
3. For accuracy, voltage is measured differentially to VDD. Limit
is 0.050V max.
Specifications CD40106BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Propagation Delay
Transition Time
SYMBOL
TPHL
TPLH
CONDITIONS (NOTE 1, 2)
GROUP A
SUBGROUPS TEMPERATURE
VDD = 5V, VIN = VDD or GND
9
10, 11
TTHL
TTLH
VDD = 5V, VIN = VDD or GND
9
10, 11
+25oC
+125oC,
-55oC
+25oC
+125oC,
-55oC
LIMITS
MIN
MAX
UNITS
-
280
ns
-
378
ns
-
200
ns
-
270
ns
NOTES:
1. CL = 50pF, RL = 200K, Input TR, TF < 20ns
2. -55oC and +125oC limits guaranteed, 100% testing being implemented.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Supply Current
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
MIN
MAX
UNITS
IDD
VDD = 5V, VIN = VDD or GND
1, 2
-55oC, +25oC
-
1
µA
+125oC
-
30
µA
µA
VDD = 10V, VIN = VDD or GND
VDD = 15V, VIN = VDD or GND
Output Voltage
VOL
VDD = 5V, No Load
1, 2
1, 2
1, 2
-55oC,
+25oC
-
2
+125oC
-
60
µA
-55oC, +25oC
-
2
µA
+125oC
-
120
µA
+25oC, +125oC,
-
50
mV
-55oC
Output Voltage
VOL
VDD = 10V, No Load
1, 2
+25oC, +125oC,
-55oC
-
50
mV
Output Voltage
VOH
VDD = 5V, No Load
1, 2
+25oC, +125oC,
-55oC
4.95
-
V
Output Voltage
VOH
VDD = 10V, No Load
1, 2
+25oC, +125oC,
-55oC
9.95
-
V
Output Current (Sink)
IOL5
VDD = 5V, VOUT = 0.4V
1, 2
+125oC
0.36
-
mA
-55oC
0.64
-
mA
+125oC
0.9
-
mA
-55oC
1.6
-
mA
+125oC
2.4
-
mA
-55oC
4.2
-
mA
+125oC
-
-0.36
mA
-55oC
-
-0.64
mA
+125oC
-
-1.15
mA
-55oC
-
-2.0
mA
+125oC
-
-0.9
mA
-55oC
-
-1.6
mA
+125oC
-
-2.4
mA
-55oC
-
-4.2
mA
1, 2, 3
+25oC
-
140
ns
1, 2, 3
+25oC
-
120
ns
1, 2, 3
+25oC
-
100
ns
1, 2, 3
+25oC
-
80
ns
Output Current (Sink)
Output Current (Sink)
Output Current (Source)
Output Current (Source)
Output Current (Source)
Output Current (Source)
Propagation Delay
Transition Time
IOL10
IOL15
IOH5A
IOH5B
IOH10
IOH15
TPHL
TPLH
TTHL
TTLH
VDD = 10V, VOUT = 0.5V
VDD = 15V, VOUT = 1.5V
VDD = 5V, VOUT = 4.6V
1, 2
1, 2
1, 2
VDD = 5V, VOUT = 2.5V
1, 2
VDD = 10V, VOUT = 9.5V
VDD =15V, VOUT = 13.5V
VDD = 10V
VDD = 15V
VDD = 10V
VDD = 15V
7-1329
1, 2
1, 2
Specifications CD40106BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
LIMITS
PARAMETER
SYMBOL
Input Capacitance
CIN
CONDITIONS
Any Input
NOTES
TEMPERATURE
MIN
MAX
UNITS
1, 2
+25oC
-
7.5
pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on
initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K., Input TR, TF < 20ns
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
SYMBOL
Supply Current
IDD
CONDITIONS
VDD = 20V, VIN = VDD or GND
NOTES
TEMPERATURE
MIN
MAX
UNITS
1, 4
+25oC
-
7.5
µA
N Threshold Voltage
VNTH
VDD = 10V, ISS = -10µA
1, 4
+25oC
-2.8
-0.2
V
N Threshold Voltage
Delta
∆VTN
VDD = 10V, ISS = -10µA
1, 4
+25oC
-
±1
V
P Threshold Voltage
VTP
VSS = 0V, IDD = 10µA
1, 4
+25oC
0.2
2.8
V
P Threshold Voltage
Delta
∆VTP
VSS = 0V, IDD = 10µA
1, 4
+25oC
-
±1
V
1
+25oC
VOH >
VDD/2
VOL <
VDD/2
V
1, 2, 3, 4
+25oC
-
1.35 x
+25oC
Limit
ns
Functional
F
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
Propagation Delay Time
TPHL
TPLH
VDD = 5V
3. See Table 2 for +25oC limit.
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25oC
PARAMETER
SYMBOL
DELTA LIMIT
Supply Current - MSI-1
IDD
± 0.2µA
Output Current (Sink)
IOL5
± 20% x Pre-Test Reading
IOH5A
± 20% x Pre-Test Reading
Output Current (Source)
TABLE 6. APPLICABLE SUBGROUPS
MIL-STD-883
METHOD
GROUP A SUBGROUPS
Initial Test (Pre Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
Interim Test 1 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
Interim Test 2 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
100% 5004
1, 7, 9, Deltas
100% 5004
1, 7, 9
100% 5004
1, 7, 9, Deltas
CONFORMANCE GROUP
PDA (Note 1)
Interim Test 3 (Post Burn-In)
PDA (Note 1)
Final Test
Group A
100% 5004
2, 3, 8A, 8B, 10, 11
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
7-1330
READ AND RECORD
IDD, IOL5, IOH5A
Specifications CD40106BMS
TABLE 6. APPLICABLE SUBGROUPS
MIL-STD-883
METHOD
GROUP A SUBGROUPS
Subgroup B-5
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroup B-6
Sample 5005
1, 7, 9
Sample 5005
1, 2, 3, 8A, 8B, 9
CONFORMANCE GROUP
Group B
Group D
READ AND RECORD
Subgroups 1, 2, 3, 9, 10, 11
Subgroups 1, 2 3
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE GROUPS
TEST
READ AND RECORD
MIL-STD-883
METHOD
PRE-IRRAD
POST-IRRAD
PRE-IRRAD
POST-IRRAD
5005
1, 7, 9
Table 4
1, 9
Table 4
Group E Subgroup 2
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
OSCILLATOR
FUNCTION
OPEN
GROUND
VDD
Static Burn-In 1
Note 1
2, 4, 6, 8, 10, 12
1, 3, 5, 7, 9, 11, 13
14
Static Burn-In 2
Note 1
2, 4, 6, 8, 10, 12
7
1, 3, 5, 9, 11,
13, 14
Dynamic BurnIn Note 1
-
7
14
2, 4, 6, 8, 10, 12
7
1, 3, 5, 9, 11,
13, 14
Irradiation
Note 2
9V ± -0.5V
50kHz
2, 4, 6, 8, 10, 12
1, 3, 5, 9, 11, 13
25kHz
NOTES:
1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V
2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures,
VDD = 10V ± 0.5V
AMBIENT TEMPERATURE (TA) = +25oC
30
OUTPUT LOW (SINK) CURRENT (IOL) (mA)
OUTPUT LOW (SINK) CURRENT (IOL) (mA)
Typical Performance Characteristics
GATE-TO-SOURCE VOLTAGE (VGS) = 15V
25
20
15
10V
10
5
5V
0
5
10
15
15.0
GATE-TO-SOURCE VOLTAGE (VGS) = 15V
12.5
10.0
10V
7.5
5.0
2.5
5V
0
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
FIGURE 2. TYPICAL OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS
AMBIENT TEMPERATURE (TA) = +25oC
5
10
15
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
FIGURE 3. MINIMUM OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS
7-1331
Specifications CD40106BMS
0
AMBIENT TEMPERATURE (TA) = +25oC
GATE-TO-SOURCE VOLTAGE (VGS) = -5V
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
-15
-10
-5
0
-5
-10
-15
-10V
-20
-25
-15V
-30
0
AMBIENT TEMPERATURE (TA) = +25oC
0
GATE-TO-SOURCE VOLTAGE (VGS) = -5V
-5
-10V
-10
-15V
FIGURE 4. TYPICAL OUTPUT HIGH (SOURCE) CURRENT
CHARACTERISTICS
-15
OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
-15
-10
-5
(Continued)
OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)
Typical Performance Characteristics
FIGURE 5. MINIMUM OUTPUT HIGH (SOURCE) CURRENT
CHARACTERISTICS
AMBIENT TEMPERATURE (TA) = +25oC
SUPPLY VOLTAGE (VDD) = 15V
SUPPLY VOLTAGE (VDD) = 15V
1.5
12.5
10V
10.0
7.5
VDD
VIN
CURRENT
PEAK
VO
ALL
ID OTHER
INPUTS TO
VDD OR VSS
VO
ID
5V
5.0
2
1
1.0
0.5
OUTPUT VOLTAGE (VO) (V)
CURRENT
PEAK
15
DRAIN CURRENT (ID) (mA)
OUTPUT VOLTAGE (VO) (V)
15.0
VDD
10V
10
VIN
2
1
ALL
OTHER
INPUTS TO
VDD OR VSS
-55oC
+125oC
5V
5
VO
2.5
0
0
2.5
5.0
7.5
10.0
12.5
0
15.0
0
0
5
INPUT VOLTAGE (VI) (V)
FIGURE 6. TYPICAL CURRENT AND VOLTAGE TRANSFER
CHARACTERISTICS
TRANSITION TIME (tTHL, tTLH) (ns)
PROPAGATION TIME (tPHL, tPLH) (ns)
AMBIENT TEMPERATURE (TA) = +25oC
AMBIENT TEMPERATURE (TA) = +25oC
SUPPLY VOLTAGE (VDD) = 5V
100
10V
5V
50
0
0
15
FIGURE 7. TYPICAL VOLTAGE TRANSFER CHARACTERISTICS AS A FUNCTION OF TEMPERATURE
200
150
10
INPUT VOLTAGE (VI) (V)
20
40
60
80
LOAD CAPACITANCE (CL) (pF)
200
150
100
10V
FIGURE 8. TYPICAL PROPAGATION DELAY TIME AS A FUNCTION OF LOAD CAPACITANCE
15V
50
0
0
100
SUPPLY VOLTAGE (VDD) = 5V
20
40
60
80
100
LOAD CAPACITANCE (CL) (pF)
FIGURE 9. TYPICAL TRANSITION TIME AS A FUNCTION OF
LOAD CAPACITANCE
7-1332
CD40106BMS
105 8
6
4
(Continued)
TRIGGER THRESHOLD VOLTAGE (VP, VN) (V)
POWER DISSIPATION PER TRIGGER (PD) (µW)
Typical Performance Characteristics
AMBIENT TEMPERATURE (TA) = +25oC
2
104 8
SUPPLY VOLTAGE (VDD) = 15V
6
4
5V
2
103 8
10V
6
4
2
102
8
6
4
CL = 50pF
CL = 15pF
2
10
10-1
2
4 68
1
2
4 68
2
4 68
2
4 68
10
102
103
INPUT FREQUENCY (f) (kHz)
2
4 68
AMBIENT TEMPERATURE (TA) = +25oC
INPUT ON TERMINALS 1, 5, 8, 12 OR 2, 6, 9, 13;
OTHER INPUTS TIED TO VDD
15
VP
10
VN
5
0
104
FIGURE 10. TYPICAL POWER DISSIPATION PER TRIGGER AS
A FUNCTION OF INPUT FREQUENCY
0
5
10
15
20
SUPPLY VOLTAGE (VDD) (V)
FIGURE 11. TYPICAL TRIGGER THRESHOLD VOLTAGE AS A
FUNCTION OF SUPPLY VOLTAGE
POWER DISSIPATION (PD) (µW)
25
20
15
HYSTERESIS
(
(
VH
X 100 PERCENT
VDD
104 8
6
4
2
AMBIENT TEMPERATURE (TA) = +25oC
10
5
0
103 8 SUPPLY VOLTAGE (VDD) = 15pF
6 FREQUENCY (f) = 100kHz
4
2
102
10 8
6
4
2
18
10-1
0
5
10
15
20
8
6
4
2
6
4
2
FIGURE 12. TYPICAL PERCENT HYSTERESIS AS A FUNCTION
OF SUPPLY VOLTAGE
15V, 1kHz
10V, 1kHz
5V, 1kHz
2
0.1
SUPPLY VOLTAGE (VDD) (V)
15V, 10kHz
4 68
1
AMBIENT TEMPERATURE (TA) = +25oC
LOAD CAPACITANCE (CL) = 15pF
2
4 68
2
4 68
2
4 68
10
102
103
RISE AND FALL TIME (tr, tf) (ns)
2
4 68
104
FIGURE 13. TYPICAL POWER DISSIPATION AS A FUNCTION
OF RISE AND FALL TIMES
Applications
VDD
R
1/3 CD4007UB
VDD
VDD
VDD
VSS
1
tM
2
VDD
C
VSS
1/6 CD40106BMS
VSS
VSS
VSS
1/6 CD40106BMS
tM = RC
n
VDD
VDD-VP
50kΩ ≤ R ≤ 1MΩ
100pF ≤ C ≤ 1µF
FREQUENCY RANGE OF WAVE SHAPE
IS FROM DC TO 1MHz
FOR THE RANGE OF R AND C
GIVEN 5µs < tM < 1s
FIGURE 14. WAVE SHAPER
FIGURE 15. MONOSTABLE MULTIVIBRATOR
7-1333
CD40106BMS
Applications
(Continued)
tA
VDD
1/6 CD40106BMS
VSS
tA = RC n
R
VP
VN
VDD-VN
VDD-VP
50kΩ ≤ R ≤ 1MΩ
100pF ≤ C ≤ 1µF
C
FOR THE RANGE OF R AND C
GIVEN 2µs < tA < 0.4s
VSS
FIGURE 16. ASTABLE MULTIVIBRATOR
VP
VN
VDD
VH
VIN
VH
VO
VSS
VH = VP - VN
VIN
VDD
VO
VIN
VO
VN
VP
VSS
(b) TRANSFER CHARACTERISTIC OF 1 OF 6 GATES
(a) DEFINITION OF VP, VN, VH
FIGURE 17. HYSTERESIS DEFINITION, CHARACTERISTICS, AND TEST SETUP
OUTPUT
CHARACTERISTIC
INPUT
CHARACTERISTIC
VDD
VOH
LOGIC “1”
INPUT
REGION
LOGIC “1”
OUTPUT
REGION
VOL
VP
VOH
VN
LOGIC “0”
OUTPUT
REGION
LOGIC “0”
INPUT
REGION
VOL
DRIVER
VSS
FIGURE 18. INPUT AND OUTPUT CHARACTERISTICS
7-1334
LOAD
CD40106BMS
Chip Dimensions and Pad Layout
Dimensions in parenthesis are in millimeters and are
derived from the basic inch dimensions as indicated.
Grid graduations are in mils (10-3 inch).
METALLIZATION:
PASSIVATION:
Thickness: 11kÅ − 14kÅ,
AL.
10.4kÅ - 15.6kÅ, Silane
BOND PADS: 0.004 inches X 0.004 inches MIN
DIE THICKNESS: 0.0198 inches - 0.0218 inches
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Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
1335
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