REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R162-97. – CFS 97-02-24 Monica L. Poelking B Changes in accordance with NOR 5962-R398-97. - RLC 97-07-29 Raymond L. Monnin C Add device class T criteria. Editorial changes throughout. - JAK 98-12-09 Monica L. Poelking D Correct the total dose rate and update RHA levels. - LTG 99-04-28 Monica L. Poelking 05-09-07 Thomas M. Hess 16-02-10 Thomas M. Hess Update boilerplate to MIL-PRF-38535 requirements. Editorial changes throughout. - LTG Update radiation features in section 1.5 and SEP table IB. Update boilerplate paragraphs to MIL-PRF-38535. - jwc E F REV SHEET REV F F F F F F F F SHEET 15 16 17 18 19 20 21 22 REV STATUS REV F F F F F F F F F F F F F F OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http://www.landandmaritime.dla.mil Rick C. Officer STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen APPROVED BY THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE Monica L. Poelking DRAWING APPROVAL DATE MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, DUAL 4-STAGE STATIC SHIFT REGISTER WITH SERIAL INPUT/ PARALLEL OUTPUTS, MONOLITHIC SILICON 95-12-13 REVISION LEVEL AMSC N/A F SIZE CAGE CODE A 67268 SHEET DSCC FORM 2233 APR 97 5962-96624 1 OF 21 5962-E488-15 1. SCOPE 1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. For device class T, the user is encouraged to review the manufacturer’s Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended application. 1.2 PIN. The PIN is as shown in the following example: 5962 R Federal stock class designator \ 96624 RHA designator (see 1.2.1) 01 V X C Device type (see 1.2.2) Device class designator (see 1.2.3) Case outline (see 1.2.4) Lead finish (see 1.2.5) / \/ Drawing number 1.2.1 RHA designator. Device classes Q, T, and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 4015B Radiation hardened, CMOS, dual 4-stage static shift register with serial input/parallel output. 02 4015BN Radiation hardened, CMOS, dual 4-stage static shift register with serial input/parallel output with neutron irradiated die 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, nonJAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q, V Certification and qualification to MIL-PRF-38535 T Certification and qualification to MIL-PRF-38535 with performance as specified in the device manufacturers approved quality management plan. 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter E X Descriptive designator Terminals Package style CDIP2-T16 CDFP4-F16 16 16 Dual-in-line Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q, T, and V or MIL-PRF-38535, appendix A for device class M. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-96624 A REVISION LEVEL F SHEET 2 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VDD) .................................................................................. -0.5 V dc to +20 V dc DC input voltage range (VIN) ................................................................................ -0.5 V dc to VDD + 0.5 V dc DC input current, any one input (IIN)..................................................................... ±10 mA Device dissipation per output transistor ............................................................... 100 mW Storage temperature range (TSTG) ....................................................................... -65°C to +150°C Lead temperature (soldering, 10 seconds) .......................................................... +265°C Thermal resistance, junction-to-case (ΘJC): Case outline E ................................................................................................... 24°C/W Case outline X ................................................................................................... 29°C/W Thermal resistance, junction-to-ambient (ΘJA): Case outline E ................................................................................................... 73°C/W Case outline X ................................................................................................... 114°C/W Junction temperature (TJ) .................................................................................... +175°C Maximum package power dissipation at TA = +125°C (PD): 4/ Case outline E ................................................................................................... 0.68 W Case outline X ................................................................................................... 0.44 W 1.4 Recommended operating conditions. Supply voltage range (VDD) .................................................................................. +3.0 V dc to +20 V dc Case operating temperature range (TC) ............................................................... -55°C to +125°C Input voltage range (VIN) ...................................................................................... +0.0 V to VDD Output voltage range (VOUT)................................................................................. +0.0 V to VDD 1.5 Radiation features: 5/ Maximum total dose available (dose rate = 50 – 300 rad (Si)/s)........................ 100 Krads(Si) Single event phenomenon (SEP): No SEL occurs at effective LET (see 4.4.4.5)............................................... ≤ 75 MeV/(mg/cm2) 6/ No SEU occurs at effective LET (see 4.4.4.5) ............................................. ≤ 75 MeV/(mg/cm2) 6/ 14 Neutron irradiated (device type 02) .................................................................. 1 x 10 neutrons/cm2 7/ 1/ 2/ 3/ 4/ 5/ 6/ 7/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Unless otherwise noted, all voltages are referenced to VSS. The limits for the parameters specified herein shall apply over the full specified VDD range and case temperature range of -55°C to +125°C unless otherwise noted. If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on ΘJA) at the following rate: Case outline E ....................................................................................................... 13.7 mW/°C Case outline X ....................................................................................................... 8.8 mW/°C Radiation testing is performed on the standard evaluation circuit. Limits are guaranteed by design or process but not production tested unless specified by the customer through the purchase order or contract. Device type 02 neutron irradiated at the wafer level as specified herein. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-96624 A REVISION LEVEL F SHEET 3 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 MIL-STD-1835 - Test Method Standard Microcircuits. Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 MIL-HDBK-780 - List of Standard Microcircuit Drawings. Standard Microcircuit Drawings. (Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or http://assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. (Copies of these documents are available online at http://www.astm.org or from: ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA 19428-2959.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q, T, and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-96624 A REVISION LEVEL F SHEET 4 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q, T, and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Load circuit and switching waveforms. The load circuit and switching waveforms shall be as specified on figure 3. 3.2.5 Irradiation test connections. The irradiation test connections shall be as specified in table III. 3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q, T, and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q, T, and V shall be a "QML" or "Q" as required in MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q, T, and V, a certificate of compliance shall be required from a QML38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MILHDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q, T, and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q, T, and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritime's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 40 (see MIL-PRF-38535, appendix A). STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-96624 A REVISION LEVEL F SHEET 5 TABLE IA. Electrical performance characteristics. Test Symbol Test conditions -55°C ≤ TC ≤ +125°C unless otherwise specified Device type Group A subgroups Limits All 1, 3 1/ 5.0 Min Supply current IDD VDD = 5.0 V, VIN = VDD or GND 2 1/ 150.0 10.0 2 1/ 300.0 VDD = 15 V, VIN = VDD or GND 1, 3 1/ 10.0 2 1/ 600.0 1 10.0 2 1000.0 1 25.0 VDD = 18 V, VIN = VDD or GND current (sink) 3 VDD = 5 V All 0.53 VO = 0.4 V 2 1/ 0.36 VIN = 0.0 V or VDD 3 1/ 0.64 All 1 1.4 2 1/ 0.9 3 1/ 1.6 1 3.5 VO = 1.5 V 2 1/ 2.4 VIN = 0.0 V or VDD 3 1/ 4.2 VO = 0.5 V VIN = 0.0 V or VDD VDD = 15 V IOH current (source) All VDD = 5 V All -0.53 VO = 4.6 V 2 1/ -0.36 VIN = 0.0 V or VDD 3 1/ -0.64 All 1 -1.8 2 1/ -1.15 3 1/ -2.0 1 -1.4 VO = 9.5 V 2 1/ -0.9 VIN = 0.0 V or VDD 3 1/ -1.6 1 -3.5 2 1/ -2.4 VO = 2.5 V VIN = 0.0 V or VDD VDD = 10 V All VDD = 15 V All VO = 13.5 V VIN = 0.0 V or VDD IIL 3 1/ VDD = 20 V, VIN = VDD or GND All current low VDD = 18 V, VIN = VDD or GND Input leakage IIH m A 1 VDD = 5 V Input leakage 10.0 1 VDD = 10 V High level output µA 1, 3 1/ M, D, P, L, R 2/ IOL Max VDD = 10 V, VIN = VDD or GND VDD = 20 V, VIN = VDD or GND Low level output Un it VDD = 20 V, VIN = VDD or GND All current high VDD = 18 V, VIN = VDD or GND m A -4.2 1 -100 2 -1000 3 -100 nA 1 100 2 1000 3 100 See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-96624 A REVISION LEVEL F SHEET 6 TABLE IA. Electrical performance characteristics - Continued. Test Symbol Test conditions -55°C ≤ TC ≤ +125°C unless otherwise specified Device type Group A subgroups All 1, 2, 3 Limits Min Output voltage VOH high Output voltage VOL low VDD = 5 V, no load 1/ 1, 2, 3 9.95 VDD = 15 V, no load 3/ 1, 2, 3 14.95 All VDD = 10 V, no load 1/ VDD = 15 V, no load Input voltage low Input voltage high N threshold VIL VIH VNTH VDD = 5 V VOH > 4.5 V, VOL < 0.5 V VDD = 10 V VOH > 9.0 V, VOL < 1.0 V 1/ VDD = 15 V VOH > 13.5 V, VOL < 1.5 V VDD = 5 V VOH > 4.5 V, VOL < 0.5 V VDD = 10 V VOH > 9.0 V, VOL < 1.0 V 1/ VDD = 15 V VOH > 13.5 V, VOL < 1.5 V VDD = 10 V, ISS = -10 µA voltage All All All ∆VNTH VPTH VDD = 10 V, ISS = -10 µA M, D, P, L, R 2/ VSS = 0.0 V, IDD = 10 µA voltage 0.05 1, 2, 3 0.05 1, 2, 3 0.05 1, 2, 3 1.5 1, 2, 3 3.0 1, 2, 3 4.0 1, 2, 3 3.5 1, 2, 3 7.0 1, 2, 3 11.0 1 -0.7 -2.8 -0.2 -2.8 ∆VPTH 1 All 1 All 1 All 7 VOH > VOL < 7 VDD/2 VDD/2 0.7 0.2 VSS = 0.0 V, IDD = 10µA M, D, P, L, R 2/ VDD = 2.8 V, VIN = VDD or GND VDD = 20 V, VIN = VDD or GND VDD = 18 V, VIN = VDD or GND All M. D, P, L, R 2/ V V ±1.0 All M, D, P, L, R 2/ P threshold voltage delta Functional tests V 1, 2, 3 M, D, P, L, R 2/ N threshold voltage delta P threshold Max 4.95 VDD = 10 V, no load 1/ VDD = 5 V, no load 1/ Unit 2.8 V 2.8 ±1.0 V 8A 7 VDD = 3.0 V, VIN = VDD or GND All M. D, P, L, R 2/ 8B 7 Input capacitance CIN Any input, see 4.4.1c 1/ All 4 7.5 pF Propagation delay time, clock to Q tPHL1, VDD = 5 V, VIN = VDD or GND All 9 320 ns 10, 11 432 9 432 VDD = 10 V, VIN = VDD or GND 9 1/ 160 VDD = 15 V, VIN = VDD or GND 9 1/ 120 tPLH1 4/ M. D, P, L, R 2/ See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-96624 A REVISION LEVEL F SHEET 7 TABLE I. Electrical performance characteristics - Continued. Test Symbol Test conditions -55°C ≤ TC ≤ +125°C unless otherwise specified Device type Group A subgroups Limits All 9 400.0 10, 11 540.0 9 540.0 VDD = 10 V, VDD or GND 1/ 9 200.0 VDD = 15 V, VDD or GND 1/ 9 160.0 Min Propagation delay tPHL2 VDD = 5 V, VIN = VDD or GND time, reset to Q 4/ Transition time tTHL, M, D, P, L, R 2/ VDD = 5 V, VIN = VDD or GND All Maximum clock input frequency Minimum data setup time fCLK 9 200.0 270.0 VDD = 10 V, VIN = VDD or GND 1/ 9 100.0 VDD = 15 V, VIN = VDD or GND 1/ 9 80.0 VDD = 5 V, VIN = VDD or GND All 9 3.0 10, 11 2.22 VDD = 10 V, VIN = VDD or GND 1/ 9 6.0 VDD = 15 V, VIN = VDD or GND 1/ 9 8.5 4/ ts VDD = 5 V, VIN = VDD or GND 1/ 4/ VDD = 10 V, VIN = VDD or GND All VDD = 15 V, VIN = VDD or GND Clock rise or fall time Minimum clock pulse width pulse width 1/ 2/ 3/ 4 9 70.0 9 40.0 9 30.0 9 15.0 VDD = 5 V, VIN = VDD or GND 1/ 4/ VDD = 10 V, VIN = VDD or GND 9 15.0 VDD = 15 V, VIN = VDD or GND 9 15.0 9 180.0 9 80.0 tw VDD = 5 V, VIN = VDD or GND 1/ 4/ VDD = 10 V, VIN = VDD or GND All All 9 50.0 9 200.0 VDD = 10 V, VIN = VDD or GND 9 80.0 VDD = 15 V, VIN = VDD or GND 9 60.0 twR VDD = 5 V, VIN = VDD or GND 1/ 4/ All ns ns MHz tr, tf VDD = 15 V, VIN = VDD or GND Minimum reset Max 10, 11 tTLH 4/ Unit ns ns ns ns These tests are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which affect these characteristics. Devices supplied to this drawing meet all levels M, D, P, L, and R of irradiation. However, this device is only tested at the "R" level (see 1.5 herein). Pre and post irradiation values are identical unless otherwise specified in table I. When performing post irradiation electrical measurements for any RHA level, TA = +25°C. For accuracy, voltage is measured differentially to VDD. Limit is 0.050 V maximum. Load capacitance (CL) = 50 pF, load resistance (RL) = 200 kΩ, input rise and fall times (tr, tf) < 20 ns. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-96624 A REVISION LEVEL F SHEET 8 TABLE IB. SEP test limits. 1/ 2/ 3/ Device type Bias VDD = 3.0 V No SEU occurs at effective LET Bias VDD = 18 V for SEL test No SEL occurs at effective LET All LET ≤ 75 MeV/(mg/cm2) LET ≤ 75 MeV/(mg/cm2) 1/ 2/ 3/ For SEP test conditions, see 4.4.4.3 herein. Technology characterization and model verification supplemented by in-line data may be used in lieu of end-of-line testing. Test plan must be approved by TRB and qualifying activity. Tested for worst case operating temperature, TA = +25°C ± 10°C for SEU and for latch up TA = +125°C ± 10°C. Device type All Case outlines E and X Terminal Number Terminal symbol 1 CLOCK B 2 Q4B 3 Q3A 4 Q2A 5 Q1A 6 RESET A 7 DATA A 8 VSS 9 CLOCK A 10 Q4A 11 Q3B 12 Q2B 13 Q1B 14 RESET B 15 DATA B 16 VDD FIGURE 1. Terminal connections. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-96624 A REVISION LEVEL F SHEET 9 CL ↑ ↑ ↓ X Inputs D 0 1 X X R 0 0 0 1 Q1 0 1 Q1 0 Outputs Qn Qn-1 Qn-1 Qn No change 0 1 = High logic level 0 = Low logic level X = Don't care ↑ = Low-to-high clock transition ↓ = High-to-low clock transition Q1 = The level Q1, respectively, before the indicated steady-state input conditions were established. Qn, Qn-1 = The level of Qn, respectively, before the last transition of the clock. FIGURE 2. Truth table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-96624 A REVISION LEVEL F SHEET 10 FIGURE 3. Load circuit and switching waveforms. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-96624 A REVISION LEVEL F SHEET 11 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q, and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan, including screening (4.2), qualification (4.3), and conformance inspection (4.4). The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class T, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 and the device manufacturer’s QM plan including screening, qualification, and conformance inspection. The performance envelope and reliability information shall be as specified in the manufacturer’s QM plan. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. For device class T, screening shall be in accordance with the device manufacturer’s Quality Management (QM) plan, and shall be conducted on all devices prior to qualification and technology conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TA = +125°C, minimum. b. Interim and final electrical test parameters shall be as specified in table IIA herein. 4.2.2 Additional criteria for device classes Q, T, and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. For device classes Q, T, and V, interim and final electrical test parameters shall be as specified in table IIA herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B or as modified in the device manufacturer’s Quality Management (QM) plan. 4.3 Qualification inspection for device classes Q, T, and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Qualification inspection for device class T shall be in accordance with the device manufacturer’s Quality Management (QM) plan. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection for device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). Technology conformance inspection for class T shall be in accordance with the device manufacturer’s Quality Management (QM) plan. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-96624 A REVISION LEVEL F SHEET 12 4.4.1 Group A inspection. a. Tests shall be as specified in table IIA herein. b. For device class M, subgroups 7 and 8 tests shall be sufficient to verify the truth table in figure 2 herein. For device classes Q and V, subgroups 7 and 8 shall include verifying the functionality of the device. c. CIN shall be measured only for initial qualification and after process or design changes which may affect capacitance. CIN shall be measured between the designated terminal and GND at a frequency of 1 MHz. Tests shall be sufficient to validate the limits defined in table I herein. TABLE IIA. Electrical test requirements. Test requirements Subgroups (in accordance with MIL-STD-883, method 5005, table I) Subgroups (in accordance with MIL-PRF-38535, table III) Device class M Device class Q Device class V 1, 7, 9 1, 7, 9 1, 7, 9 1, 2, 3, 7, 8, 9, 10, 11 1/ 1, 2, 3, 7, 8, 9, 10, 11 1/ 1, 2, 3, 7, 8, 9, 10, 11 2/ 3/ 1, 2, 3, 4, 7, 8, 9, 10, 11 1, 2, 3, 4, 7, 8, 9, 10, 11 1, 2, 3, 4, 7, 8, 9, 10, 11 1, 2, 3, 7, 8, 9, 10, 11 1, 2, 3, 7, 8, 9, 10, 11 1, 2, 3, 7, 8, 9, 10, 11 3/ Group D end-point electrical parameters (see 4.4) 1, 7, 9 1, 7, 9 1, 7, 9 Group E end-point electrical parameters (see 4.4) 1, 7, 9 1, 7, 9 1, 7, 9 Interim electrical parameters (see 4.2) Final electrical parameters (see 4.2) Group A test requirements (see 4.4) Group C end-point electrical parameters (see 4.4) Device class T As specified in QM plan 1/ PDA applies to subgroups 1 and 7. 2/ PDA applies to subgroups 1, 7, 9, and ∆'s. 3/ Delta limits, as specified in table IIB herein, shall be required where specified, and the delta values shall be completed with reference to the zero hour electrical parameters (see table I). TABLE IIB. Burn-in and operating life test, delta parameters (+25°C). Parameters 1/ Symbol Delta limits Supply current IDD ± 0.1 µA Output current (sink) VDD = 5.0 V IOL ± 20% Output current (source) VDD = 5.0 V, VOUT = 4.6 V IOH ± 20% 1/ These parameters shall be recorded before and after the required burn-in and life test to determine delta limits. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-96624 A REVISION LEVEL F SHEET 13 4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein. 4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883: a. Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD-883. b. TA = +125°C, minimum. c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. 4.4.2.2 Additional criteria for device classes Q, T, and V. The steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD-883. 4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein. 4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). RHA levels for device classes M, Q and V shall be as specified in MIL-PRF-38535 and the end-point electrical parameters shall be as specified in table IIA herein. For device class T, the RHA requirements shall be in accordance with the Class T Radiation Requirements of MIL-PRF-38535. The end-point electrical parameters for class T devices shall be as specified in table I, group A subgroups, or as modified in the QM plan. 4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883 method 1019, condition A, and as specified herein. For device class T, the total dose requirements shall be in accordance with the class T radiation requirements of MIL-PRF-38535 (see 1.5 herein). 4.4.4.1.1 Accelerated aging testing. Accelerated aging testing shall be performed on all devices requiring a RHA level greater than 5k rads (Si). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and shall be the pre-irradiation end-point electrical parameter limits at 25°C ±5°C. Testing shall be performed at initial qualification and after any design or process changes which may affect the RHA response of the device. 4.4.4.2 Neutron irradiation. Neutron irradiation for device type 02 shall be conducted in wafer form using a neutron fluence of approximately 1 x 1014 neutrons/cm2. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-96624 A REVISION LEVEL F SHEET 14 4.4.4.5 Single event phenomena (SEP). When specified in the purchase order or contract, SEP testing shall be required on class T and V devices (see 1.5 herein). SEP testing shall be performed on a technology process on the Standard Evaluation Circuit (SEC) or alternate SEP test vehicle as approved by the qualifying activity at initial qualification and after any design or process changes which may affect the upset or latchup characteristics. The recommended test conditions for SEP are as follows: a. The ion beam angle of incidence shall be between normal to the die surface and 60° to the normal, inclusive (i.e. 0° ≤ angle ≤ 60°). No shadowing of the ion beam due to fixturing or package related effects is allowed. b. The fluence shall be ≥ 100 errors or ≥ 106 ions/cm2. c. The flux shall be between 102 and 105 ions/cm2/s. The cross-section shall be verified to be flux independent by measuring the cross-section at two flux rates which differ by at least an order of magnitude. d. The particle range shall be ≥ 20 micron in silicon. e. The test temperature shall be +25°C and the maximum rated operating temperature ±10°C. f. Bias conditions shall be defined by the manufacturer for the latchup measurements. g. Test four devices with zero failures. 4.5 Methods of inspection. Methods of inspection shall be specified as follows: 4.5.1 Voltage and current. Unless otherwise specified, all voltages given are referenced to the microcircuit GND terminal. Currents given are conventional current and positive when flowing into the referenced terminal. 5. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes Q, T, and V or MIL-PRF-38535, appendix A for device class M. 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. 6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor prepared specification or drawing. 6.1.2 Substitutability. Device class Q devices will replace device class M devices. 6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-96624 A REVISION LEVEL F SHEET 15 6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices (FSC 5962) should contact DLA Land and Maritime-VA, telephone (614) 692-0544. 6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime-VA, Columbus, Ohio 43218-3990 or telephone (614) 692-0547. 6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-38535 and MIL-HDBK-1331. 6.6 Sources of supply. 6.6.1 Sources of supply for device classes Q, T, and V. Sources of supply for device classes Q, T, and V are listed in QML-38535. The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DLA Land and Maritime-VA and have agreed to this drawing. 6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103. The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by DLA Land and Maritime-VA 6.7 Additional information. A copy of the following additional data shall be maintained and available from the device manufacturer: a. RHA levels test conditions (SEP). b. Number of upsets (SEU). c. Number of transients (SET). d. Occurrence of latch-up (SEL). STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-96624 A REVISION LEVEL F SHEET 16 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-96624 A.1 SCOPE A.1.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers approved QM plan for use in monolithic microcircuits, multi-chip modules (MCMs), hybrids, electronic modules, or devices using chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of military high reliability (device class Q) and space application (device class V) are reflected in the Part or Identification Number (PIN). When available, a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN. A.1.2 PIN. The PIN is as shown in the following example: 5962 R Federal stock class designator \ RHA designator (see A.1.2.1) 96624 01 V 9 A Device type (see A.1.2.2) Device class designator (see A.1.2.3) Die code Die details (see A.1.2.4) / \/ Drawing number A.1.2.1 RHA designator. Device classes Q and V RHA identified die meet the MIL-PRF-38535 specified RHA levels. A dash (-) indicates a non-RHA die. A.1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 4015B Radiation Hardened, CMOS, dual 4-stage static shift register with serial input/parallel output 02 4015BN Radiation Hardened, CMOS, dual 4-stage static shift register with serial input/parallel output, neutron irradiated die A.1.2.3 Device class designator. Device class Q or V STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 Device requirements documentation Certification and qualification to the die requirements of MIL-PRF-38535 SIZE 5962-96624 A REVISION LEVEL F SHEET 17 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-96624 A.1.2.4 Die details. The die details designation is a unique letter which designates the die's physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product and variant supplied to this appendix. A.1.2.4.1 Die physical dimensions. Die type Figure number 01, 02 A-1 A.1.2.4.2 Die bonding pad locations and electrical functions. Die type Figure number 01, 02 A-1 A.1.2.4.3 Interface materials. Die type Figure number 01, 02 A-1 A.1.2.4.4 Assembly related information. Die type Figure number 01, 02 A-1 A.1.3 Absolute maximum ratings. See paragraph 1.3 herein for details. A.1.4 Recommended operating conditions. See paragraph 1.4 herein for details. A.2 APPLICABLE DOCUMENTS. A.2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARD MIL-STD-883 - Test Method Standard Microcircuits. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or http://assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-96624 A REVISION LEVEL F SHEET 18 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-96624 A.2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. A.3 REQUIREMENTS A.3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. A.3.2 Design, construction and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein and the manufacturer’s QM plan for device classes Q and V. A.3.2.1 Die physical dimensions. The die physical dimensions shall be as specified in A.1.2.4.1 and on figure A-1. A.3.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as specified in A.1.2.4.2 and on figure A-1. A.3.2.3 Interface materials. The interface materials for the die shall be as specified in A.1.2.4.3 and on figure A-1. A.3.2.4 Assembly related information. The assembly related information shall be as specified in A.1.2.4.4 and on figure A-1. A.3.2.5 Truth table. The truth table shall be as defined in paragraph 3.2.3 herein. A.3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be as defined in paragraph 3.2.5 herein. A.3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this document. A.3.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing sufficient to make the packaged die capable of meeting the electrical performance requirements in table IA. A.3.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN listed in A.1.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535. A.3.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see A.6.4 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this appendix shall affirm that the manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein. A.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuit die delivered to this drawing. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-96624 A REVISION LEVEL F SHEET 19 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-96624 A.4 VERIFICATION A.4.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM plan shall not affect the form, fit, or function as described herein. A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the manufacturer’s QM plan. As a minimum, it shall consist of: a. Wafer lot acceptance for class V product using the criteria defined in MIL-STD-883, method 5007. b. 100% wafer probe (see paragraph A.3.4 herein). c. 100% internal visual inspection to the applicable class Q or V criteria defined in MIL-STD-883, method 2010 or the alternate procedures allowed in MIL-STD-883, method 5004. A.4.3 Conformance inspection. A.4.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see A.3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of packaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified in paragraphs 4.4.4 herein. A.5 DIE CARRIER A.5.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan or as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and electrostatic protection. A.6 NOTES A.6.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications, and logistics purposes. A.6.2 Comments. Comments on this appendix should be directed to DLA Land and Maritime-VA, Columbus, Ohio, 432183990 or telephone (614) 692-0547. A.6.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-38535 and MIL-HDBK-1331. A.6.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535. The vendors listed within QML-38535 have submitted a certificate of compliance (see A.3.6 herein) to DLA Land and MaritimeVA and have agreed to this drawing. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-96624 A REVISION LEVEL F SHEET 20 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-96624 Die physical dimensions. Die size: Die thickness: 2039 x 2489 microns. 20 ±1 mils. Die bonding pad locations and electrical functions. NOTE: Pad numbers reflect terminal numbers when placed in case outlines E and X (see figure 1). FIGURE A-1 STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-96624 A REVISION LEVEL F SHEET 21 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-96624 Interface materials. Top metallization: Al Backside metallization: None 11.0 kÅ – 14.0 kÅ Glassivation Type: Thickness: Substrate: PSG 10.4 kÅ - 15.6 kÅ Single crystal silicon Assembly related information. Substrate potential: Floating or tied to VDD Special assembly instructions: Bond pad #16 (VDD) first FIGURE A-1 – Continued. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-96624 A REVISION LEVEL F SHEET 22 STANDARD MICROCIRCUIT DRAWING BULLETIN DATE: 16-02-10 Approved sources of supply for SMD 5962-96624 are listed below for immediate acquisition information only and shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by DLA Land and Maritime-VA. This information bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime maintains an online database of all current sources of supply at http://www.landandmaritime.dla.mil/Programs/Smcr/ Standard microcircuit drawing PIN 1/ Vendor CAGE number Vendor similar PIN 2/ 5962R9662401VEC 34371 CD4015BDMSR 5962R9662401VXC 34371 CD4015BKMSR 5962R9662401V9A 3/ CD4015BHSR 5962R9662401TEC 3/ CD4015BDTR 5962R9662401TXC 3/ CD4015BKTR 5962R9662402VEC 3/ CD4015BDNSR 5962R9662402VXC 34371 CD4015BKNSR 5962R9662402V9A 3/ CD4015BHNSR 1/ The lead finish shown for each PIN representing a hermetic package is the most readily available from the manufacturer listed for that part. If the desired lead finish is not listed, contact the vendor to determine its availability. 2/ Caution. Do not use this number for item acquisition. Items acquired to this number may not satisfy the performance requirements of this drawing. 3/ Not available from an approved source of supply. Vendor CAGE number 34371 Vendor name and address Intersil Corporation 1001 Murphy Ranch Road Milpitas, CA 95035-6803 The information contained herein is disseminated for convenience only and the Government assumes no liability whatsoever for any inaccuracies in the information bulletin.