99547

REVISIONS
LTR
DATE (YR-MO-DA)
APPROVED
A
B
C
Make changes to 1.3, 1.4, and line regulation test as specified in table I. - ro
Add case outline Y. Make changes to 1.2.4, 1.3, figure 1, and table IIB. - ro
Make changes to figure 2. - ro
DESCRIPTION
99-08-23
99-10-08
99-12-17
R. MONNIN
R. MONNIN
R. MONNIN
D
Make changes to case Y, dimension D2 as specified in figure 1. - ro
00-01-21
R. MONNIN
Make changes to case Y, dimensions A and E2 as specified in figure 1. - ro
00-04-06
R. MONNIN
00-12-07
R. MONNIN
01-06-06
R. MONNIN
04-12-21
R. MONNIN
06-05-09
R. MONNIN
08-04-22
R. HEBER
11-09-06
C. SAFFLE
E
Make changes to VREF, RLINE, IADJ, ∆IADJ tests as specified in TABLE I
herein. - ro
Add case outline U. Make changes to 1.2.4, 1.3, table I, and figure 1. - ro
Add Input-output voltage differential limit under 1.3 and SET limits
under 1.5. - ro
Add enhanced low dose rate effects (ELDRS) paragraph to 1.5 and table I.
Deleted dose rate induced latchup testing paragraph in section 4. - rrp
Delete the output voltage range limit from paragraph 1.3 and the accelerated
aging test paragraph under section 4. - ro
Add device types 02 and 03. Make changes to 1.2.2, 1.5, Table I, figure 2,
4.4.4.2, and Appendix A. -rrp
F
G
H
J
K
L
REV
SHEET
REV
L
L
L
SHEET
15
16
17
REV STATUS
REV
L
L
L
L
L
L
L
L
L
L
L
L
L
L
OF SHEETS
SHEET
1
2
3
4
5
6
7
8
9
10
11
12
13
14
PMIC N/A
PREPARED BY
RICK OFFICER
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.landandmaritime.dla.mil
CHECKED BY
RAJESH PITHADIA
APPROVED BY
RAYMOND MONNIN
DRAWING APPROVAL DATE
99-07-23
REVISION LEVEL
L
MICROCIRCUIT, LINEAR, RADIATION
HARDENED, ADJUSTABLE POSITIVE VOLTAGE
REGULATOR, MONOLITHIC SILICON
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
5962-99547
1 OF 17
5962-E488-11
1. SCOPE
1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device classes Q and
M), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case
outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of
Radiation Hardness Assurance (RHA) levels is reflected in the PIN. For device class T, the user is encouraged to review the
manufacturer’s Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended
application.
1.2 PIN. The PIN is as shown in the following example:
5962
F
Federal
stock class
designator
\
99547
RHA
designator
(see 1.2.1)
01
V
X
C
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and
are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
Circuit function
01
HS-117RH
Radiation hardened (HDR), adjustable
positive voltage regulator
02
HS-117EH
Radiation hardened (HDR and LDR),
adustable positive voltage regulator
03
HS-117
Adjustable positive voltage regulator
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
Device requirements documentation
M
Vendor self-certification to the requirements for MIL-STD-883 compliant, nonJAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A
Q, V
Certification and qualification to MIL-PRF-38535
T
Certification and qualification to MIL-PRF-38535 with performance as specified
in the device manufacturers approved quality management plan.
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
Descriptive designator
U
X
See figure 1
MSFM1-P3
3
3
Y
CBCC1-N3
3
STANDARD
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DSCC FORM 2234
APR 97
Terminals
Package style
Can
Single row flange mount with isolated
tab and ceramic sealed.
Bottom terminal chip carrier
SIZE
5962-99547
A
REVISION LEVEL
L
SHEET
2
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q, T and V or MIL-PRF-38535,
appendix A for device class M.
1.3 Absolute maximum ratings. 1/
Input-output voltage differential ....................................................................... 40 V dc
Maximum output current (IMAX) ...................................................................... 1.5 A
Maximum power dissipation (PD): 2/
TC = +25°C:
Case U ........................................................................................................ 8 W
Case X ......................................................................................................... 50 W
Case Y ......................................................................................................... 27.5 W
TC = +100°C:
Case U ........................................................................................................ 3.3 W
Case X ......................................................................................................... 20 W
Case Y ......................................................................................................... 11 W
Junction temperature maximum (TJ) ............................................................... 175°C
Lead temperature (soldering, 10 seconds) ...................................................... 265°C
Storage temperature range ............................................................................. -65°C to +150°C
Thermal resistance, junction-to-case (θJC):
Case U ........................................................................................................ 15°C/W
Case X ......................................................................................................... 2.5°C/W
Case Y ......................................................................................................... 4.5°C/W
1.4 Recommended operating conditions.
Output voltage range ...................................................................................... 1.25 V dc to 37 V dc
Input voltage range ......................................................................................... 4.25 V dc to 40 V dc
Ambient operating temperature range (TA) ..................................................... -55°C to +125°C
1.5 Radiation features.
Maximum total dose available (dose rate = 50 – 300 rad(Si)/s):
5
Device types 01 and 02 ................................................................................ 3 x 10 rads (Si)
5
Device type 01 class T ................................................................................ 1 x 10 rads (Si)
ELDRS test ( low dose rate < 10 mrad(Si)/s):
Device class V:
Device type 01 ............................................................................................ Not production tested 3/
Device type 02 ............................................................................................ 50 krad(Si) 3/ 4/
______
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ The linear derating factor for case U is 0.067 W/°C, case X is 0.4 W/°C and case Y it is 0.22 W/°C.
3/ For device types 01 and 02, the manufacturer supplying RHA parts on this drawing has performed characterization testing
to a level of 50 krad(Si) that demonstrates the parts do not exhibit enhanced low dose rate sensitivity (ELDRS) according to
MIL-STD-883 method 1019 paragraph 3.13.1.1. Radiation end point limits for the noted parameters are guaranteed only for
the conditions specified in MIL-STD-883, method 1019, condition A and/or D as applicable.
4/ Device type 02 is production lot acceptance tested on a wafer by wafer basis to 50 krad(Si) at low dose rate
(≤ 10 mrad(Si)/s).
STANDARD
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DSCC FORM 2234
APR 97
SIZE
5962-99547
A
REVISION LEVEL
L
SHEET
3
1.5 Radiation features – continued.
Single event phenomena (SEP) (Device types 01 and 02):
No single event transients (SET) (at 100mV)
at effective linear energy transfer (LET) .................................................... ≤ 15 MeV/mg/cm
2
5/
No single event burn-out (SEB) to an
effective linear energy transfer (LET) ....................................................... ≤ 87.4 MeV/mg/cm
2
Latch up immune (Device types 01 and 02) .................................................... None 6/
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch/ or from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q, T and V shall be in accordance with
MIL-PRF-38535 as specified herein, or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q, T and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outline). The case outlines shall be in accordance with 1.2.4 herein and figure 1.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2.
3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 3.
_______
5/ Input voltage ≥ 9 V and output capacitance ≥ 44 µF.
6/ Guaranteed by process or design.
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REVISION LEVEL
L
SHEET
4
TABLE I. Electrical performance characteristics.
Test
Reference voltage
Symbol
VREF
Conditions 1/ 2/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
VDIFF = 3.0 V, VDIFF = 40 V,
RLINE
Limits
Unit
Min
Max
1,2,3
01, 02,
03
1.2
1.3
1
01, 02
1.2
1.3
1,2,3
01, 02,
03
±0.02
1
01, 02
±0.02
1,2,3
01, 02,
03
±1.5
1
01, 02
±1.5
1,2,3
01, 02,
03
±1.5
1
01, 02
±1.5
1,2,3
01, 02,
03
100
1
01, 02
100
IADJ 3 V – IADJ 40 V,
1
01, 02,
03
±5
5.0 mA ≤ IL ≤ 5.5 mA
2,3
5.0 mA ≤ IL ≤ 5.5 mA
M,D,P,L,R,F
Line regulation
Device
type
VREF = VOUT - VADJ,
V
%/V
3.0 V ≤ VDIFF ≤ 40 V,
5.0 mA ≤ IL ≤ 5.5 mA
M,D,P,L,R,F
VDIFF = 3 V,
Load regulation 3/
RLOAD
4/
5 mA ≤ IL ≤ 500 mA,
%
5 mA ≤ IL ≤ 1.25 A
M,D,P,L,R,F
VDIFF = 3 V,
5/
5 mA ≤ IL ≤ 500 mA
M,D,P,L,R,F
Adjustment pin current
IADJ
VDIFF = 3.0 V, VDIFF = 40 V,
µA
5.0 mA ≤ IL ≤ 5.5 mA
M,D,P,L,R,F
Adjustment pin current
change
∆IADJ
M,D,P,L,R,F
Output current
IOUT
4/
M,D,P,L,R,F
5/
M,D,P,L,R,F
µA
±6
±6
1
01, 02
1,2,3
01, 02,
03
1.25
1
01, 02
1.25
1,2,3
01, 02,
03
0.50
1
01, 02
0.50
A
See footnotes at end of table.
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REVISION LEVEL
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TABLE I. Electrical performance characteristics – Continued.
1/
Device types 01 and 02 supplied to this drawing meet all levels M, D, P, L, R and F of irradiation for classes M, Q, and V
and levels M, D, P, L, and R for class T. However, device types 01 and 02 (classes M, Q, and V) are only tested at the F
level, and class T is only tested at the R level (see paragraph 1.5) in accordance with MIL-STD-883 method 1019 condition
A (high dose rate). In addition, device type 02 (device class V) supplied to this drawing is production lot acceptance tested
on a wafer by wafer basis to the “L” level (50 krads(Si)) in accordance with MIL-STD-883 method 1019 condition D (low
dose rate).
Pre and post irradiation values are identical unless otherwise specified in table I. When performing post irradiation
electrical measurements for any RHA level, TA = +25°C.
2/
For device types 01 and 02, the manufacturer supplying RHA parts on this drawing has performed characterization testing
to a level of 50 krad(Si) that demonstrates the parts do not exhibit enhanced low dose rate sensitivity (ELDRS) according to
MIL-STD-883 method 1019 paragraph 3.13.1.1. Radiation end point limits for the noted parameters are guaranteed only for
the conditions specified in MIL-STD-883, method 1019, condition A and/or D as applicable.
3/
Regulation is measured at a constant junction temperature, using pulse testing with a low duty cycle. Changes in
output voltage due to heating effects are covered under the specification for thermal regulation. Measurements taken
at the output lead must be adjusted for lead resistance.
4/
Applies to case outlines X and Y only.
5/
Applies to case outline U only.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
case operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q, T and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall
be in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q, T and V shall be a "QML" or "Q" as required
in MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
3.6 Certificate of compliance. For device classes Q, T and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of
supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q, T and V, the requirements of
MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q, T and V in
MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to
this drawing.
3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime -VA of change of
product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing.
3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritime 's agent,
and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. Offshore
documentation shall be made available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in
microcircuit group number 59 (see MIL-PRF-38535, appendix A).
STANDARD
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DSCC FORM 2234
APR 97
SIZE
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A
REVISION LEVEL
L
SHEET
6
Case U
Symbol
Inches
Millimeters
Notes
Min
Max
Min
Max
A
.160
.180
4.07
4.58
φb
.016
.021
0.41
0.53
1
φb2
.016
.019
0.41
0.48
1
φD
.350
.370
8.89
9.40
φD1
.315
.335
8.00
8.51
e
.200 BSC
5.08 BSC
.100 BSC
e1
2.54 BSC
F
.009
.050
0.23
1.27
k
.027
.034
0.69
0.86
j
.027
.045
0.69
1.14
2
L
.500
.750
12.70
19.05
1
L1
---
.050
---
1.27
1
L2
.250
---
6.35
---
1
α
N
45° BSC
3
3
45° BSC
3
4
NOTES:
1. All leads, φb2 applies between L1 and L2. φb applies between L2 and 0.500 from the reference plane.
Diameter is uncontrolled in L1 and beyond 0.500 from the reference plane.
2. Measured from maximum diameter of the product.
3. α is the basic spacing from the centerline of the tab to terminal 1 looking at the bottom of the package.
4. N is the maximum number of terminal positions.
FIGURE 1. Case outline.
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Device types
Case outlines
01, 02, 03
U
Terminal number
X
Y
Terminal symbol
1
INPUT
ADJUST
ADJUST
2
ADJUST
OUTPUT
INPUT
3
OUTPUT
INPUT
OUTPUT
FIGURE 2. Terminal connections.
NOTE:
Pin numbers reflected are for case outline X.
FIGURE 3. Radiation exposure circuit.
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4. VERIFICATION
4.1 Sampling and inspection. For device classes Q, and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan, including screening (4.2),
qualification (4.3), and conformance inspection (4.4). The modification in the QM plan shall not affect the form, fit, or function as
described herein. For device class T, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 and the
device manufacturer’s QM plan including screening, qualification, and conformance inspection. The performance envelope and
reliability information shall be as specified in the manufacturer’s QM plan. For device class M, sampling and inspection
procedures shall be in accordance with MIL-PRF-38535, appendix A.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
For device class T, screening shall be in accordance with the device manufacturer’s Quality Management (QM) plan, and shall
be conducted on all devices prior to qualification and technology conformance inspection.
4.2.1 Additional criteria for device class M.
a.
Burn-in test, method 1015 of MIL-STD-883.
(1) Test condition A, B, C or D. The test circuit shall be maintained by the manufacturer under document revision
level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015.
(2) TA = +125°C, minimum.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
4.2.2 Additional criteria for device classes Q, T and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
b.
For device classes Q, T and V interim and final electrical test parameters shall be as specified in table IIA herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, Appendix B.
4.3 Qualification inspection for device classes Q, T and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Qualification inspection for device class T shall be in accordance with the device
manufacturer’s Quality Management (QM) plan. Inspections to be performed shall be those specified in MIL-PRF-38535 and
herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections, and as specified herein. Quality conformance inspection for
device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed
for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections
(see 4.4.1 through 4.4.4). Technology conformance inspection for class T shall be in accordance with the device manufacturer’s
Quality Management (QM) plan.
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TABLE IIA. Electrical test requirements.
Test requirements
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Subgroups
(in accordance with
MIL-STD-883,
method 5005, table I)
Device
class M
Interim electrical
parameters (see 4.2)
Final electrical
parameters (see 4.2)
Group A test
requirements (see 4.4)
Group C end-point electrical
parameters (see 4.4)
Group D end-point electrical
parameters (see 4.4)
Group E end-point electrical
parameters (see 4.4)
Device
class Q
Device
class V
Device
class T
As specified
in QM plan
1,2,3,∆ 2/ 3/
As specified
in QM plan
1
1
1
1,2,3 1/
1,2,3
1,2,3
1,2,3
1,2,3
As specified
in QM plan
1,2,3
1,2,3
1,2,3 3/
As specified
in QM plan
1
1
1
As specified
in QM plan
1
1
1
As specified
in QM plan
1/
1/ PDA applies to subgroup 1.
2/ PDA applies to subgroup 1 and ∆.
3/ Delta limits as specified in table IIB herein shall be required where specified, and the delta values
shall be completed with reference to the zero hour electrical parameters (see table I).
TABLE IIB. Burn-in and operating life test, Delta parameters (TA = +25°C).
Parameters 1/
Delta limits
VREF
0.05 V
IADJ
5 µA
1/ These parameters shall be recorded before and after the required
burn-in and life test to determine delta limits.
4.4.1 Group A inspection.
a.
Tests shall be as specified in table IIA herein.
b.
Subgroups 4, 5, 6, 7, 8, 9, 10, and 11 in table I, method 5005 of MIL-STD-883 shall be omitted.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
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4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a.
Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
b.
TA = +125°C, minimum.
c.
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q, T and V. The steady-state life test duration, test condition and test
temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB in
accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test
circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1005 of MIL-STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein). RHA levels for device classes M, Q and V shall be as specified in MIL-PRF-38535. End-point electrical
parameters shall be as specified in table IIA herein.
4.4.4.1 Group E inspection for device class T. For device class T, the RHA requirements shall be in accordance with the
class T radiation requirements of MIL-PRF-38535. End-point electrical parameters shall be as specified in table IIA herein.
4.4.4.2 Total dose irradiation testing. Total dose irradiation testing (HDR - high dose rate) shall be performed in accordance
with MIL-STD-883 method 1019, condition A and as specified herein for device types 01 and 02. Total dose irradiation testing
(ELDRS – low dose rate) shall be performed in accordance with MIL-STD-883 method 1019, condition D and as specified herein
for device type 02. For device class T, the total dose requirements shall be in accordance with the class T radiation
requirements of MIL-PRF-38535.
4.4.4.3 Single event phenomena (SEP). When specified in the purchase order or contract SEP testing shall be required on
class T and V devices (see 1.5 herein). SEP testing shall be performed on a technology process on the Standard Evaluation
Circuit (SEC) or alternate SEP test vehicle as approved by the qualifying activity at initial qualification and after any design or
process changes which may affect the upset or latchup characteristics. The recommended test conditions for SEP are as
follows:
a.
The ion beam angle of incidence shall be between normal to the die surface and 60° to the normal, inclusive
(i.e. 0° ≤ angle ≤ 60°). No shadowing of the ion beam due to fixturing or package related effects is allowed.
b.
The fluence shall be ≥ 100 errors or ≥ 10 ions/cm .
c.
The flux shall be between 10 and 10 ions/cm /s. The cross-section shall be verified to be flux independent by
measuring the cross-section at two flux rates which differ by at least an order of magnitude.
d.
The particle range shall be ≥ 20 micron in silicon.
e.
The test temperature shall be +25°C and the maximum rated operating temperature ±10°C.
f.
Bias conditions shall be defined by the manufacturer for the latchup measurements.
g.
Test four devices with zero failures.
7
2
5
2
2
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
Q, T and V or MIL-PRF-38535, appendix A for device class M.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-99547
A
REVISION LEVEL
L
SHEET
11
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
6.1.2 Substitutability. Device class Q devices will replace device class M devices.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires
configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and
this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DLA Land and Maritime-VA, telephone (614) 692-0544.
6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime-VA, Columbus, Ohio 43218-3990,
or telephone (614) 692-0540.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q, T and V. Sources of supply for device classes Q, T and V are listed in QML38535. The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DLA Land and Maritime
-VA and have agreed to this drawing.
6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103.
The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been
submitted to and accepted by DLA Land and Maritime -VA.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-99547
A
REVISION LEVEL
L
SHEET
12
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-99547
A.1 SCOPE
A.1.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified
Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers
approved QM plan for use in monolithic microcircuits, multi-chip modules (MCMs), hybrids, electronic modules, or devices using
chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of
military high reliability (device class Q) and space application (device class V) are reflected in the Part or Identification Number
(PIN). When available, a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN.
A.1.2 PIN. The PIN is as shown in the following example:
5962
F
Federal
stock class
designator
\
RHA
designator
(see A.1.2.1)
99547
01
V
9
A
Device
type
(see A.1.2.2)
Device
class
designator
(see A.1.2.3)
Die
code
Die
details
(see A.1.2.4)
/
\/
Drawing number
A.1.2.1 RHA designator. Device classes Q and V RHA identified die meet the MIL-PRF-38535 specified RHA levels. A dash
(-) indicates a non-RHA die.
A.1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
01
HS-117RH
02
HS-117EH
Circuit function
Radiation hardened (HDR), adjustable positive
voltage regulator
Radiation hardened (HDR and LDR), adjustable
positive voltage regulator
A.1.2.3 Device class designator.
Device class
Q or V
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
Device requirements documentation
Certification and qualification to the die requirements of MIL-PRF-38535
SIZE
5962-99547
A
REVISION LEVEL
L
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13
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-99547
A.1.2.4 Die details. The die details designation is a unique letter which designates the die's physical dimensions, bonding
pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product
and variant supplied to this appendix.
A.1.2.4.1 Die physical dimensions.
Die type
Figure number
01, 02
A-1
A.1.2.4.2 Die bonding pad locations and electrical functions.
Die type
Figure number
01, 02
A-1
A.1.2.4.3 Interface materials.
Die type
Figure number
01, 02
A-1
A.1.2.4.4 Assembly related information.
Die type
Figure number
01, 02
A-1
A.1.3 Absolute maximum ratings. See paragraph 1.3 herein for details.
A.1.4 Recommended operating conditions. See paragraph 1.4 herein for details.
A.1.5 Radiation features. See paragraph 1.5 herein for details.
A.2 APPLICABLE DOCUMENTS.
A.2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in
the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARD
MIL-STD-883 - Test Method Standard Microcircuits.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 - List of Standard Microcircuit Drawings.
MIL-HDBK-780 - Standard Microcircuit Drawings.
(Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch/ or from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-99547
A
REVISION LEVEL
L
SHEET
14
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-99547
A.2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the
text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
A.3 REQUIREMENTS
A.3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
A.3.2 Design, construction and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein and the manufacturer’s QM plan for device classes Q and V.
A.3.2.1 Die physical dimensions. The die physical dimensions shall be as specified in A.1.2.4.1 and on figure A-1.
A.3.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as
specified in A.1.2.4.2 and on figure A-1.
A.3.2.3 Interface materials. The interface materials for the die shall be as specified in A.1.2.4.3 and on figure A-1.
A.3.2.4 Assembly related information. The assembly related information shall be as specified in A.1.2.4.4 and on figure A-1.
A.3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as defined in paragraph 3.2.3 herein.
A.3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this
document.
A.3.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing
sufficient to make the packaged die capable of meeting the electrical performance requirements in table I.
A.3.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a
customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN listed
in A.1.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.
A.3.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a
QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see A.6.4 herein). The certificate of
compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this appendix shall
affirm that the manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the
requirements herein.
A.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535
shall be provided with each lot of microcircuit die delivered to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-99547
A
REVISION LEVEL
L
SHEET
15
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-99547
A.4 VERIFICATION
A.4.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance
with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM
plan shall not affect the form, fit, or function as described herein.
A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the
manufacturer’s QM plan. As a minimum, it shall consist of:
a.
Wafer lot acceptance for class V product using the criteria defined in MIL-STD-883, method 5007.
b.
100% wafer probe (see paragraph A.3.4 herein).
c.
100% internal visual inspection to the applicable class Q or V criteria defined in MIL-STD-883, method 2010 or the
alternate procedures allowed in MIL-STD-883, method 5004.
A.4.3 Conformance inspection.
A.4.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see
A.3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of
packaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified in paragraphs 4.4.4,
4.4.4.1, 4.4.4.2, and 4.4.4.3 herein.
A.5 DIE CARRIER
A.5.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan or
as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and
electrostatic protection.
A.6 NOTES
A.6.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with
MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications, and
logistics purposes.
A.6.2 Comments. Comments on this appendix should be directed to DLA Land and Maritime -VA, Columbus, Ohio,
43218-3990 or telephone (614)-692-0540.
A.6.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
A.6.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed within QML-38535 have submitted a certificate of compliance (see A.3.6 herein) to DLA Land and Maritime VA and have agreed to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-99547
A
REVISION LEVEL
L
SHEET
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-99547
NOTE: Pad numbers reflect terminal numbers when placed in case outline X (see figure 2).
Die bonding pad locations and electrical functions
Die physical dimensions.
Die size: 103 mils x 110 mils.
Die thickness: 19 mils ± 1 mils.
Interface materials.
Top metallization: Al Si Cu 16.0 kÅ ± 2 kÅ
Backside metallization: Al,Ti, N, Au
Glassivation.
Type: PSG
Thickness: 8 kÅ ± 1 kÅ
Substrate: DI (dielectric isolation)
Assembly related information.
Substrate potential: Unbiased
Special assembly instructions: None
FIGURE A-1. Die bonding pad locations and electrical functions.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-99547
A
REVISION LEVEL
L
SHEET
17
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 11-09-06
Approved sources of supply for SMD 5962-99547 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DLA Land and Maritime -VA. This information
bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime
maintains an online database of all current sources of supply at http://www.landandmaritime.dla.mil/Programs/Smcr/.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962F9954701QXC
34371
HS9S-117RH-8
5962F9954701VXC
34371
HS9S-117RH-Q
5962F9954701V9A
34371
HS0-117RH-Q
5962R9954701TXC
3/
HS9S-117RH-T
5962F9954701QYC
34371
HSYE-117RH-8
5962F9954701VYC
34371
HSYE-117RH-Q
5962R9954701TYC
3/
HSYE-117RH-T
5962F9954701VUC
34371
HS2-117RH-Q
5962F9954701QUC
34371
HS2-117RH-8
5962F9954702VXC
34371
HS9S-117EH-Q
5962F9954702V9A
34371
HS0-117EH-Q
5962F9954702VYC
34371
HSYE-117EH-Q
5962F9954702VUC
34371
HS2-117EH-Q
5962-9954703QYC
34371
HSYE-117-8
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
3/ Not available from an approved source of supply.
Vendor CAGE
number
34371
Vendor name
and address
Intersil Corporation
1001 Murphy Ranch Road
Milpitas, CA 95035-6803
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.