99536

REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
A
Make change to VTHUV test specified under table I. - ro
00-03-07
R. MONNIN
B
Add device type 02. - ro
01-07-26
R. MONNIN
C
Make changes to ILK and +IIN tests as specified in table I. - ro
01-12-14
R. MONNIN
D
Make change to the high side floating supply offset voltage limit for device
type 02 as specified under 1.4. - ro
02-04-17
R. MONNIN
E
Add a new logic diagram for device type 02. - ro
03-04-15
R. MONNIN
F
Make correction to the title block. Make clarification to footnote 7/ under
paragraph 1.5. Add pin description to figure 1. Make changes to correct
figure 3, irradiation circuit. - ro
11-01-19
C. SAFFLE
G
Make correction to figure 3, irradiation circuit. - ro
11-04-05
C. SAFFLE
H
Add device type 03, Table IB, paragraphs 4.4.4.3 and 6.7.
Delete irradiation circuits. - ro
12-08-02
C. SAFFLE
REV
SHEET
REV
H
H
H
H
H
H
H
H
H
H
H
SHEET
15
16
17
18
19
20
21
22
23
24
25
REV STATUS
REV
H
H
H
H
H
H
H
H
H
H
H
H
H
H
OF SHEETS
SHEET
1
2
3
4
5
6
7
8
9
10
11
12
13
14
PMIC N/A
PREPARED BY
RICK OFFICER
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.landandmaritime.dla.mil
CHECKED BY
RAJESH PITHADIA
APPROVED BY
RAYMOND MONNIN
DRAWING APPROVAL DATE
99-06-29
REVISION LEVEL
H
MICROCIRCUIT, DIGITAL-LINEAR, RADIATION
HARDENED, HIGH FREQUENCY HALF BRIDGE
DRIVER, MONOLITHIC SILICON
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
5962-99536
1 OF 25
5962-E315-12
1. SCOPE
1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device classes Q and
M), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case
outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of
Radiation Hardness Assurance (RHA) levels is reflected in the PIN. For device class T, the user is encouraged to review the
manufacturer’s Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended
application.
1.2 PIN. The PIN is as shown in the following example:
5962
F
Federal
stock class
designator
\
99536
RHA
designator
(see 1.2.1)
01
V
X
C
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and
are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
01
HS-2100RH
02
IS-2100ARH
03
IS-2100AEH
Circuit function
120 V, radiation hardened, dielectric isolated high
frequency half bridge driver
150 V, radiation hardened, dielectric isolated high
frequency half bridge driver
150 V, radiation hardened, dielectric isolated high
frequency half bridge driver
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
Device requirements documentation
M
Vendor self-certification to the requirements for MIL-STD-883 compliant, nonJAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A
Q, V
Certification and qualification to MIL-PRF-38535
T
Certification and qualification to MIL-PRF-38535 with performance as specified
in the device manufacturers approved quality management plan.
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
X
Descriptive designator
CDFP4-F16
Terminals
Package style
16
Flat pack
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q, T and V or MIL-PRF-38535,
appendix A for device class M.
STANDARD
MICROCIRCUIT DRAWING
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COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-99536
A
REVISION LEVEL
H
SHEET
2
1.3 Absolute maximum ratings. 1/ 2/
High side floating supply voltage (VB):
Device type 01 .................................................................................................. -0.3 V to 120 V
Device types 02 and 03 .................................................................................... -0.3 V to 150 V
High side floating supply offset voltage (VS) ........................................................ VB – 25 V to VB + 0.3 V
High side floating output voltage (VHO) ................................................................ VS – 0.3 V to VB + 0.3 V
Low side fixed supply voltage (VCC) .................................................................... -0.3 V to 25 V
Low side output voltage (VLO) ............................................................................. COM – 0.3 V to VCC + 0.3 V
Logic supply voltage (VDD) .................................................................................. VCC 3/
Logic input voltage (HIN, LIN, and SD pins) ......................................................... VSS – 0.3 V to VDD +0.3 V
VS slew rate (dVS / dt):
Device type 01 .................................................................................................. 10 V / ns maximum
Device types 02 and 03 .................................................................................... 15 V / ns maximum
COM (low driver return) offset to VSS :
Device type 01 .................................................................................................. -7 V to +7 V
Device types 02 and 03 .................................................................................... -5 V to +5 V
Maximum power dissipation (PD) (TA ≤ +25°C) ................................................... 1.6 W
Lead temperature (soldering, 10 seconds) ........................................................... +300°C
Junction temperature (TJ) .................................................................................... +175°C
Storage temperature range .................................................................................. -55°C to +150°C
Thermal resistance, junction-to-case (θJC) .......................................................... 18°C/W
Thermal resistance, junction-to-ambient (θJA) ..................................................... 90°C/W
1.4 Recommended operating conditions.
High side floating supply absolute voltage (VB) ................................................... VS + 12 V to VS +20 V
High side floating supply offset voltage (VS):
Device type 01 .................................................................................................. -4 V to 100 V 4/
Device types 02 and 03 .................................................................................... -4 V to 130 V 4/
High side floating output voltage (VHO) ................................................................ VS to VB
Low side fixed supply (VCC) ................................................................................. 12 V to 20 V
Low side output voltage (VLO) ............................................................................. COM to VCC
Logic supply voltage (VDD) .................................................................................. VCC 3/
_____
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ All voltage parameters are absolute voltages referenced to VSS.
3/
Logic is operational for VS of -4 V but VB must remain minimum 12 V above VSS (ground).
4/
This device is recommended for VDD = VCC and they should be tied together at the board level. VDD and VCC can have
different values but both must remain within 12 V – 20 V range. Low side undervoltage monitors VDD to VSS differential.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-99536
A
REVISION LEVEL
H
SHEET
3
1.4 Recommended operating conditions – continued.
Logic supply return (VSS) ..................................................................................... 0 V
COM (low driver return) offset to VSS .................................................................. -5 V to 5 V 5/
Logic input voltage (VIN) ...................................................................................... VSS to VDD 6/
Ambient operating temperature range (TA) .......................................................... -55°C to +125°C
1.5 Radiation features.
Maximum total dose available (dose rate = 50 - 300 rads(Si)/s):
Device types 01 and 02 classes M, Q, or V ............................................................
Device type 01 class T ............................................................................................
Device type 03 .........................................................................................................
Maximum total dose available (dose rate < 0.01 rads(Si)/s):
Device type 03 .........................................................................................................
300 krads(Si) 7/
100 krads(Si) 7/
300 krads(Si) 8/
50 krads(Si) 8/
Single event phenomenon (SEP) for device types 02 and 03:
Destructive single event effects (SEE):
2
No SEL observed at effective linear energy transfer (LET) (see 4.4.4.3) ............... ≤ 90 MeV/(mg/cm ) 9/
7
2
2
No SEB observed at effective (LET) (fluence = 1.0 x 10 ions/cm ) ..................... < 90 MeV/(mg/cm ) 9/
Nondestructive single event effects (SEE):
6
2
No SET observed at effective LET (fluence 4x10 and pulse perturbation = 1) ....... < 90 MeV/(mg/cm ) 9/
_______
5/ VCC / VDD to COM must remain in 12 V to 20 V range.
6/
7/
8/
9/
The input buffers are designed to accept 5 V logic level inputs while running VDD in 12 V – 20 V range.
Device types 01 and 02 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate
effects. The radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in
MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(Si) for device classes V, Q, or M and
100 krads(Si) for device class T.
Devcice type 03 radiation end point limits for the noted parameters are guaranteed only for the conditions as specified
in MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(Si), and condition D to a maximum total
dose of 50 krads(Si).
Limits are characterized at initial qualification and after any design or process changes which may affect the SEP/SEE
characteristics but are not production tested unless specified by the customer through the purchase order or contract.
For more information on destructive SEE (SEB/SEGR) test results customers are requested to contact manufacturer.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-99536
A
REVISION LEVEL
H
SHEET
4
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at https://assist.dla.mil/quicksearch/ or from the Standardization Document
Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein.
Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation or contract.
ASTM INTERNATIONAL (ASTM)
ASTM F1192
-
Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion
Irradiation of semiconductor Devices.
(Copies of these documents are available online at http://www.astm.org or from ASTM International, 100 Barr Harbor Drive,
P.O. Box C700, West Conshohocken, PA, 19428-2959).
2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q, T and V shall be in accordance with
MIL-PRF-38535 as specified herein, or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q, T and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Logic diagram. The logic diagram shall be as specified on figure 2.
3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-99536
A
REVISION LEVEL
H
SHEET
5
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the
full ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table IA.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q, T and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall
be in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q, T and V shall be a "QML" or "Q" as required
in MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
3.6 Certificate of compliance. For device classes Q, T and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of
supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q, T and V, the requirements of
MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q, T and V in MIL-PRF-38535 or
for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime -VA of change of
product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing.
3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritime 's agent,
and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. Offshore
documentation shall be made available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in
microcircuit group number 91 (see MIL-PRF-38535, appendix A).
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-99536
A
REVISION LEVEL
H
SHEET
6
TABLE IA. Electrical performance characteristics.
Test
Symbol
Test conditions 1/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroup
Device
type
Limits
Min
Unit
Max
Logic “1” input voltage
VIH
2/
1,2,3
01,02,
03
Logic “0” input voltage
VIL
2/
1,2,3
01,02,
03
0.8
V
High level output voltage
VOH
1,2,3
01,02,
03
0.1
V
IOUT = 0 mA 2/
VBIAS - VOH
3
V
Low level output voltage
VOL
IOUT = 0 mA 2/
1,2,3
01,02,
03
0.1
V
Offset supply leakage
current
ILK
VB = VS = 100 V 2/
1,2,3
01
50
µA
02,03
500
Quiescent VB supply
current
Quiescent VCC supply
current
Quiescent VDD supply
current (inputs low)
Logic “1” input bias
current
VB = VS = 150 V 2/
IQB
VIN = 0 V or VDD 2/
1,2,3
01,02,
03
500
µA
IQCC
VIN = 0 V or VDD 2/
1,2,3
01,02,
03
50
µA
1,2,3
01,02,
03
2900
µA
1,2,3
01
60
µA
02,03
75
IQDD
+IIN
All inputs 0 V 2/
VIN = VDD 2/
VIN = VDD 2/
Logic “0” input bias
current
-IIN
VIN = 0 V 2/
1,2,3
01,02,
03
-10
VDD / VSS under-voltage
VTHUV
2/
1,2,3
01,02,
03
8
12.0
V
VTHUVs
2/
1,2,3
02,03
250
2000
mV
+IOUT
VOUT = 0 V, PW < 80 µs 2/
1,2,3
01
0.6
02,03
0.9
01
0.6
02,03
0.9
lockout threshold
VDD / VSS under-voltage
µA
lockout threshold Hystersis
Output high short circuit
pulsed current
-IOUT
VOUT = 15 V, PW < 80 µs 2/
A
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
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COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
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REVISION LEVEL
H
SHEET
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TABLE IA. Electrical performance characteristics – Continued.
Symbol
Conditions
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Low side turn-off
propagation delay
TLoff
3/
High side turn-off
propagation delay
THoff
Low side turn-on
propagation delay
TLon
High side turn-on
propagation delay
THon
Low side shutdown
propagation delay
TLsd
High side shutdown
propagation delay
THsd
Either output rise/fall time
Tr, Tf
Test
Group A
subgroups
Device
type
Limits
9,10,11
01
Max
300
02,03
360
01
420
02,03
360
01
280
02,03
425
01
360
02,03
425
01
270
02,03
400
01
380
02,03
400
01
60
02,03
40
Min
Dead time LO turn-off to
HO turn-on
DHton
Dead time HO turn-off to
LO turn-on
DLton
Turn-on propagation
delay matching
Mton
3/
9,10,11
3/
9,10,11
3/
9,10,11
3/
9,10,11
3/
9,10,11
3/
9,10,11
3/ 4/
9,10,11
3/ 4/
9,10,11
3/ 5/
9,10,11
Unit
01
-50
02,03
-20
01
-200
02,03
10
100
01
-100
0
02,03
-20
60
ns
ns
ns
ns
ns
ns
ns
ns
75
ns
ns
See footnotes at end of table.
STANDARD
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COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
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REVISION LEVEL
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TABLE IA. Electrical performance characteristics – Continued.
Test
Symbol
Mtoff
Turn-off propagation
delay matching
1/
Test conditions 1/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroup
3/ 5/
Device
type
Limits 2/
Min
Max
01
-150
0
02,03
-20
60
9,10,11
Unit
ns
RHA device types 01 and 02 supplied to this drawing meet all levels M, D, P, L, R and F of irradiation for device classes
M, Q, or V and levels M, D, P, L, and R for device class T. However, device types 01 and 02 for device classes M, Q,
and V are only tested at the “F” level, and device type 01 for device class T is only tested at the “R” level) in accordance
with MIL-STD-883 method 1019 condition A (see 1.5 herein). Device types 01 and 02 may be dose rate sensitive in a
space environment and may demonstrate enhanced low dose rate effects.
RHA device type 03 supplied to this drawing will meet all levels M, D, P, L, R, and F of irradiation for condition A and
levels M, D, P, and L for condition D. However, device type 03 is only tested at the “F” level in accordance with
MIL-STD-883, method 1019, condition A and tested at the ”L” level in accordance with MIL-STD-883, method 1019,
condition D (see 1.5 herein).
Pre and post irradiation values are identical unless otherwise specified in Table IA. When performing post irradiation
electricals measurements for any RHA level, TA = +25°C.
2/
Unless otherwise specified, VBIAS (VCC, VB, VDD) = 15 V and VSS = VS = COM = 0 V. The VIN, VTH, and IIN parameters
are referenced to VSS and are applicable to all three logic inputs. The VO and IO parameters are referenced to COM
for low output (LO) and VS for high output (HO).
3/
Unless otherwise specified, VBIAS (VCC, VB, VDD) = 15 V, VSS = VS = COM = 0 V, and CL = 1000 pF. See figure 3.
4/
For device type 01: DHton = ( THon - TLoff – TLf ) and DLton = ( TLon – THoff – THf ).
For device type 02: DHton = ( THon - TLoff ) and DLton = ( TLon – THoff ).
5/
Mton = ( TLon – THon ) and Mtoff = ( TLoff – THoff ).
TABLE IB. SEP test limits. 1/
Device
types
SEP/SEE
Temperature (TC)
VDD
Linear energy transfer
(LET)
2
[MeV/(mg/cm )]
02, 03
No SEL
+125°C
20 V
Effective LET ≤ 90
No SEB
+25°C
20 V
Effective LET ≤ 90
Fluence = 1x10
SET
+25°C
20 V
Effective LET = 90
2/
Fluence / cross
section
ions/cm
7
2
1/ For single event phenomena (SEP) test conditions, see 4.4.4.3 herein.
6
2
2/ Fluence = 4 X10 ions/cm , at VDD = 20 V and cross section 2.56 x10
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
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DSCC FORM 2234
APR 97
-4
2
mg/cm .
SIZE
5962-99536
A
REVISION LEVEL
H
SHEET
9
Device types
01, 02, 03
Case outline
X
Terminal
number
Terminal
symbol
1
LO
2
COM
Low side return.
3
VCC
Low side supply.
4
NC
No connection.
5
NC
No connection.
6
VS
High side floating supply return.
7
VB
High side floating supply.
8
HO
High side gate drive output.
9
NC
No connection.
10
NC
No connection.
11
VDD
Logic supply.
12
HIN
Logic input for high side gate driver output (HO), in phase.
13
SD
Logic input for shutdown.
14
LIN
Logic input for low side gate driver output (LO), in phase.
15
VSS
Logic ground.
16
NC
No connection.
Description
Low side gate drive output.
FIGURE 1. Terminal connections.
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Device type 01
FIGURE 2. Logic diagram.
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Device types 02 and 03
FIGURE 2. Logic diagram - continued.
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Device types 01, 02 and 03
FIGURE 3. Switching time test circuit.
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4. VERIFICATION
4.1 Sampling and inspection. For device classes Q, and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan, including screening (4.2),
qualification (4.3), and conformance inspection (4.4). The modification in the QM plan shall not affect the form, fit, or function as
described herein. For device class T, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 and the
device manufacturer’s QM plan including screening, qualification, and conformance inspection. The performance envelope and
reliability information shall be as specified in the manufacturer’s QM plan. For device class M, sampling and inspection
procedures shall be in accordance with MIL-PRF-38535, appendix A.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
For device class T, screening shall be in accordance with the device manufacturer’s Quality Management (QM) plan, and shall
be conducted on all devices prior to qualification and technology conformance inspection.
4.2.1 Additional criteria for device class M.
a.
Burn-in test, method 1015 of MIL-STD-883.
(1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision
level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015.
(2) TA = +125°C, minimum.
b.
Interim and final electrical test parameters shall be as specified in table IIA herein.
4.2.2 Additional criteria for device classes Q, T and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
b.
For device classes Q, T and V interim and final electrical test parameters shall be as specified in table IIA herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, Appendix B.
4.3 Qualification inspection for device classes Q, T and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Qualification inspection for device class T shall be in accordance with the device
manufacturer’s Quality Management (QM) plan. Inspections to be performed shall be those specified in MIL-PRF-38535 and
herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections, and as specified herein. Quality conformance inspection for
device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed
for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections
(see 4.4.1 through 4.4.4). Technology conformance inspection for class T shall be in accordance with the device manufacturer’s
Quality Management (QM) plan.
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TABLE IIA. Electrical test requirements.
Test requirements
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Subgroups
(in accordance with
MIL-STD-883,
method 5005, table I)
Device
class M
Interim electrical
parameters (see 4.2)
Final electrical
parameters (see 4.2)
Group A test
requirements (see 4.4)
Group C end-point electrical
parameters (see 4.4)
Group D end-point electrical
parameters (see 4.4)
Group E end-point electrical
parameters (see 4.4)
Device
class Q
Device
class V
Device
class T
As specified
in QM plan
As specified
in QM plan
1,9
1,9
1,9
1,2,3,9,10,11 1/
1,2,3,9,10,11
1,2,3,9, 1/
10,11
1,2,3,9,10,11
1,2,3,9, 2/ 3/
10,11
1,2,3,9,10,11
1,2,3,9,10,11
1,2,3,9,10,11
As specified
in QM plan
1,9
1,9
1,2,3,9, 3/
10,11
1,9
1,9
1,9
1,9
As specified
in QM plan
As specified
in QM plan
As specified
in QM plan
1/ PDA applies to subgroups 1.
2/ PDA applies to subgroups 1, 9, and ∆'s.
3/ Delta limits as specified in table IIB herein shall be required where specified, and the delta values shall
be completed with reference to the zero hour electrical parameters (see table I).
TABLE IIB. Burn-in and operating life test delta parameters. TA = +25°C.
Parameters 1/
Device type 01
Device types 02 and 03
Delta limits
ILK
±5 µA
±150 µA
IQDD
±100 µA
±100 µA
1/ These parameters shall be recorded before and after the required burn-in
and life test to determine delta limits.
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4.4.1 Group A inspection.
a.
Tests shall be as specified in table IIA herein.
b.
Subgroups 4, 5, 6, 7, and 8 in table I, method 5005 of MIL-STD-883 shall be omitted.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a.
Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
b.
TA = +125°C, minimum.
c.
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q, T and V. The steady-state life test duration, test condition and test
temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with
MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB in
accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test
circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1005 of MIL-STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein). RHA levels for device classes M, Q and V shall be as specified in MIL-PRF-38535. End-point electrical
parameters shall be as specified in table IIA herein.
4.4.4.1 Group E inspection for device class T. For device class T, the RHA requirements shall be in accordance with the
class T radiation requirements of MIL-PRF-38535. End-point electrical parameters shall be as specified in table IIA herein.
4.4.4.2 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019, condition A and as specified herein for device types 01, 02, and 03. In addition, for device type 03 a low dose
rate test shall be performed in accordance with MIL-STD-883 method 1019, condition D and as specified herein.
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4.4.4.3 Single event phenomena (SEP). When specified in the purchase order or contract, SEP testing shall be performed on
class V devices. SEP testing shall be performed on the Standard Evaluation Circuit (SEC) or alternate SEP test vehicle as
approved by the qualifying activity at initial qualification and after any design or process changes which may affect the upset or
latchup characteristics. Test four devices with zero failures. ASTM F1192 may be used as a guideline when performing SEP
testing. The recommended test conditions for SEP are as follows:
a.
The ion beam angle of incidence shall be between normal to the die surface and 60° to the normal, inclusive
(i.e. 0° ≤ angle ≤ 60°). No shadowing of the ion beam due to fixturing or package related affects is allowed.
b.
The fluence shall be ≥ 100 errors or ≥ 10 ions/cm .
c.
The flux shall be between 10 and 10 ions/cm /s. The cross-section shall be verified to be flux independent by
measuring the cross-section at two flux rates which differ by at least an order of magnitude.
d.
The particle range shall be ≥ 20 micron in silicon.
e.
The test temperature shall be +125°C ±10% for SEL and +25°C ±10% for SEB and SET.
f.
Bias conditions for VDD shall be as listed in Table IB for the latchup measurements.
g.
For SEL test limits, see Table IB herein.
7
2
5
2
2
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
Q, T and V or MIL-PRF-38535, appendix A for device class M.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
6.1.2 Substitutability. Device class Q devices will replace device class M devices.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires
configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and
this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DLA Land and Maritime-VA, telephone (614) 692-0544.
6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime-VA, Columbus, Ohio 43218-3990,
or telephone (614) 692-0540.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
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6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q, T and V. Sources of supply for device classes Q, T and V are listed in
QML-38535. The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DLA Land and
Maritime -VA and have agreed to this drawing.
6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103.
The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been
submitted to and accepted by DLA Land and Maritime -VA.
6.7 Additional information. When applicable, a copy of the following additional data shall be maintained and available from
the device manufacturer:
a. RHA upset levels.
b. Test conditions (SEP).
c. Number of latchups (SEL).
d. Number of burnouts (SEB).
d. Number of transients (SET).
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-99536
A.1 SCOPE
A.1.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified
Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers
approved QM plan for use in monolithic microcircuits, multi-chip modules (MCMs), hybrids, electronic modules, or devices using
chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of
military high reliability (device class Q) and space application (device class V) are reflected in the Part or Identification Number
(PIN). When available, a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN.
A.1.2 PIN. The PIN is as shown in the following example:
5962
F
Federal
stock class
designator
\
RHA
designator
(see A.1.2.1)
99536
01
V
9
X
Device
type
(see A.1.2.2)
Device
class
designator
(see A.1.2.3)
Die
code
Die
details
(see A.1.2.4)
/
\/
Drawing number
A.1.2.1 RHA designator. Device classes Q and V RHA identified die meet the MIL-PRF-38535 specified RHA levels. A dash
(-) indicates a non-RHA die.
A.1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
01
HS-2100RH
02
IS-2100ARH
03
IS-2100AEH
Circuit function
120 V, radiation hardened, dielectric isolated high
frequency half bridge driver
150 V, radiation hardened, dielectric isolated high
frequency half bridge driver
150 V, radiation hardened, dielectric isolated high
frequency half bridge driver
A.1.2.3 Device class designator.
Device class
Q or V
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Certification and qualification to the die requirements of MIL-PRF-38535
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APPENDIX A
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A.1.2.4 Die details. The die details designation is a unique letter which designates the die's physical dimensions, bonding
pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product
and variant supplied to this appendix.
A.1.2.4.1 Die physical dimensions.
Die type
Figure number
01
02, 03
A-1
A-2
A.1.2.4.2 Die bonding pad locations and electrical functions.
Die type
Figure number
01
02, 03
A-1
A-2
A.1.2.4.3 Interface materials.
Die type
Figure number
01
02, 03
A-1
A-2
A.1.2.4.4 Assembly related information.
Die type
Figure number
01
02, 03
A-1
A-2
A.1.3 Absolute maximum ratings. See paragraph 1.3 herein for details.
A.1.4 Recommended operating conditions. See paragraph 1.4 herein for details.
A.1.5 Radiation features. See paragraph 1.5 herein for details.
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-99536
A.2 APPLICABLE DOCUMENTS.
A.2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in
the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARD
MIL-STD-883 - Test Method Standard Microcircuits.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 - List of Standard Microcircuit Drawings.
MIL-HDBK-780 - Standard Microcircuit Drawings.
(Copies of these documents are available online at https://assist.dla.mil/quicksearch/ or from the Standardization Document
Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
A.2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the
text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
A.3 REQUIREMENTS
A.3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
A.3.2 Design, construction and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein and the manufacturer’s QM plan for device classes Q and V.
A.3.2.1 Die physical dimensions. The die physical dimensions shall be as specified in A.1.2.4.1 and on figures A-1 and A-2.
A.3.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as
specified in A.1.2.4.2 and on figures A-1 and A-2.
A.3.2.3 Interface materials. The interface materials for the die shall be as specified in A.1.2.4.3 and on figures A-1 and A-2.
A.3.2.4 Assembly related information. The assembly related information shall be as specified in A.1.2.4.4 and on figures A-1
and A-2.
A.3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as defined in paragraph 3.2.4 herein.
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-99536
A.3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and post-irradiation parameter limits are as specified in table IA of the body of this
document.
A.3.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing
sufficient to make the packaged die capable of meeting the electrical performance requirements in table IA.
A.3.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a
customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN listed
in A.1.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.
A.3.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a
QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see A.6.4 herein). The certificate of
compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this appendix shall
affirm that the manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the
requirements herein.
A.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535
shall be provided with each lot of microcircuit die delivered to this drawing.
A.4 VERIFICATION
A.4.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance
with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM
plan shall not affect the form, fit, or function as described herein.
A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the
manufacturer’s QM plan. As a minimum, it shall consist of:
a.
Wafer lot acceptance for class V product using the criteria defined in MIL-STD-883, method 5007.
b.
100% wafer probe (see paragraph A.3.4 herein).
c.
100% internal visual inspection to the applicable class Q or V criteria defined in MIL-STD-883, method 2010 or the
alternate procedures allowed in MIL-STD-883, method 5004.
A.4.3 Conformance inspection.
A.4.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see
A.3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of
packaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified in paragraphs 4.4.4,
4.4.4.1, 4.4.4.2, and 4.4.4.3 herein.
A.5 DIE CARRIER
A.5.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan or
as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and
electrostatic protection.
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-99536
A.6 NOTES
A.6.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with
MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications, and
logistics purposes.
A.6.2 Comments. Comments on this appendix should be directed to DLA Land and Maritime -VA, Columbus, Ohio,
43218-3990 or telephone (614)-692-0540.
A.6.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
A.6.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed within QML-38535 have submitted a certificate of compliance (see A.3.6 herein) to DLA Land and
Maritime -VA and have agreed to this drawing.
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-99536
Device type 01
Die bonding pad locations and electrical functions
Die physical dimensions.
Die size: 4710 microns x 3570 microns
Die thickness: 19 mils ± 1 mils
Interface materials.
Top metallization: Al Si Cu 16.0 kÅ ±2 kÅ
Backside metallization: None
Glassivation.
Type: PSG
Thickness: 8.0 kÅ ±1.0 kÅ
Substrate: Dielectric Isolation (DI)
Assembly related information.
Substrate potential: Insulator
Special assembly instructions: None
FIGURE A-1. Die bonding pad locations and electrical functions.
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-99536
Device types 02 and 03
Die bonding pad locations and electrical functions
Die physical dimensions.
Die size: 4820 microns x 3300 microns
Die thickness: 19 mils ± 1 mils
Interface materials.
Top metallization: Al Si Cu 16.0 kÅ ±2 kÅ
Backside metallization: None
Glassivation.
Type: PSG
Thickness: 8.0 kÅ ±1.0 kÅ
Substrate: Dielectric Isolation (DI)
Assembly related information.
Substrate potential: Insulator
Special assembly instructions: None
FIGURE A-2. Die bonding pad locations and electrical functions.
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STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 12-08-02
Approved sources of supply for SMD 5962-99536 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DLA Land and Maritime -VA. This information
bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime
maintains an online database of all current sources of supply at http://www.landandmaritime.dla.mil/Programs/Smcr/.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962F9953601QXC
3/
HS9-2100RH-8
5962R9953601TXC
3/
HS9-2100RH-T
5962F9953601VXC
3/
HS9-2100RH-Q
5962F9953601V9A
3/
HS0-2100RH-Q
5962F9953602QXC
34371
IS9-2100ARH-8
5962F9953602VXC
34371
IS9-2100ARH-Q
5962F9953602V9A
34371
IS0-2100ARH-Q
5962F9953603VXC
34371
IS9-2100AEH-Q
5962F9953603V9A
34371
IS0-2100AEH-Q
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
3/ Not available from an approved source of supply.
Vendor CAGE
number
34371
Vendor name
and address
Intersil Corporation
1001 Murphy Ranch Road
Milpitas, CA 95035-6803
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.