DATASHEET

ISL74422BRH
®
Data Sheet
October 2003
Radiation Hardened, 9A, Non-Inverting
Power MOSFET Driver
FN6057
Features
• QML Qualified per MIL-PRF-38535 Requirements
The radiation hardened ISL74422BRH is a non-inverting,
monolithic high-speed MOSFET driver designed to convert a
5V CMOS logic input signal into a high current output at
voltages up to 18V. Its fast rise/fall times and high current
output allow very quick control of even the largest power
MOSFETs in high frequency applications.
The input of the ISL74422BRH can be directly driven by our
IS-1825ASRH and IS-1845ASRH PWM devices. The 9A
high current output minimizes power losses in MOSFETs by
rapidly charging and discharging large gate capacitances. A
supply UVLO (Under Voltage Lock Out) circuit insures
predictable turn-on and turn-off of the driver.
Constructed with the Intersil dielectrically isolated Rad-Hard
Silicon Gate (RSG) BiCMOS process, these devices are
immune to single event latch-up and have been specifically
designed to provide highly reliable performance in harsh
radiation environments.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-03248. A “hot-link” is provided
on our website for downloading.
• Electrically Screened to DSCC SMD # 5962-03248
• Radiation Environment
- Total Dose (Max) . . . . . . . . . . . . . . . . . . . . 300krad(SI)
- Latch-Up Immune
• IPEAK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A (Min)
• TFALL (CL = 10nF) . . . . . . . . . . . . . . . . . . . . . 135ns (Max)
• TRISE (CL = 10nF) . . . . . . . . . . . . . . . . . . . . . 135ns (Max)
• Prop Delay High-Low (CL = 10nF) . . . . . . . . . 175ns (Max)
• Prop Delay Low-High (CL = 10nF) . . . . . . . . . 175ns (Max)
• Rising UVLO Threshold . . . . . . . . . . . . . . . . . . 7.5V (Max)
• Falling UVLO Threshold. . . . . . . . . . . . . . . . . . .6.0V (Min)
• UVLO Hysteresis . . . . . . . . . . . . . . . . . . . . . . . .0.3V (Min)
• Wide Supply Voltage Range . . . . . . . . . . . . . . . 8V to 18V
• Low Stand-by Current Consumption
- Input Low . . . . . . . . . . . . . . . . . . . . . . . . . .2.1mA (Max)
- Input High . . . . . . . . . . . . . . . . . . . . . . . . . .2.7mA (Max)
Applications
• Switching Power Supplies
• DC/DC Converters
Pinout
• Motor Controllers
ISL74422BRHF (FLATPACK CDFP4-F16)
TOP VIEW
Ordering Information
NC
1
16
VS (OB)
NC
2
15
VS (OB)
VS (IB)
3
14
NC
ORDERING NUMBER
INTERNAL
MKT. NUMBER
TEMP.
RANGE (oC)
5962F0324801VXC
ISL74422BRHVF
-55 to 125
ISL74422BRHQF
-55 to 125
VIN
4
13
+VOUT
5962F0324801QXC
GND (IB)
5
12
-VOUT
ISL74422BRHF/PROTO ISL74422BRHF/PROTO
NC
6
11
NC
NC
7
10
NC
GND (OB)
8
9
-55 to 125
GND (OB)
NOTES:
1. Pin 3 provides the supply voltage for the control logic. It is not
internally connected to pins 15 and 16 for noise immunity
purposes, but it must be connected externally.
2. Pin 5 is the control logic return. It is not internally connected to
pins 8 and 9 for noise immunity purposes, but it must be
connected externally.
3. Pins 8 and 9 must be connected to GND.
4. Pins 12 and 13 must be externally connected.
5. Pins 15 and 16 must be connected to VS.
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2003. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
ISL74422BRH
Die Characteristics
DIE DIMENSIONS:
Backside Finish:
4191µm x 4826µm (165 mils x 190 mils)
Thickness: 483µm ± 25.4µm (19 mils ± 1 mil)
INTERFACE MATERIALS:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Glassivation:
Unbiased (DI)
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0kÅ ± 1.0kÅ
ADDITIONAL INFORMATION:
Worst Case Current Density:
Top Metallization:
<2.0 x 105 A/cm2
Type: AlSiCu
Thickness: 16.0kÅ ± 2kÅ
Transistor Count:
40
Substrate:
Radiation Hardened Silicon Gate
Dielectric Isolation
Metallization Mask Layout
ISL74422BRH
(3) VS (IB)
(15, 16) VS (OB)
(13) +VOUT
(4) VIN
(12) -VOUT
(5) GND (IB)
(8, 9) GND (OB)
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
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