Datasheet

PHOTOMULTIPLIER TUBE
R12199
FEATURES
●High Gain
● 80 mm hemisphere
APPLICATIONS
●High Energy Physics
SPECIFICATIONS
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
Window Material
MateriaI
Photocathode
Minimum Effective Area
Structure
Dynode
Number of Stages
Base
Operating Ambient Temperature
Storage Temperature
Suitable Socket
Description / Value
300 to 650
420
Borosilicate glass
Bialkali
72
Circular and linear-focused
10
JEDEC No. B14-38
-30 to +50
-30 to +50
E678-14W (Sold separately)
Unit
nm
nm
—
—
mm
—
—
—
°C
°C
—
Value
1500
300
0.1
Unit
V
V
mA
MAXIMUM RATINGS (Absolute Maximum Values)
Supply Voltage
Parameter
Between Anode and Cathode
Between Anode and Last Dynode
Average Anode Current
CHARACTERISTICS (at 25 °C)
Cathode Sensitivity
Anode Sensitivity
Parameter
Luminous (2856 K)
Radiant at 420 nm
Blue Sensitivity Index (CS 5-58)
Quantum Efficiency at 390 nm
Luminous (2856 K)
Radiant at 420 nm
Gain
Anode Dark Current (After 30 minute storage in darkness)
Anode Pulse Rise Time
Time Response
Electron Transit Time
Transit Time Spread (FWHM)
Min.
60
—
7
—
—
—
—
—
—
—
—
Typ.
100
80
10
25
500
4.0 × 105
5.0 × 106
50
3.6
43
4.5
Max.
—
—
—
—
—
—
—
400
—
—
5.0
Unit
µA/lm
mA/W
—
%
A/lm
A/W
—
nA
ns
ns
ns
NOTE: Anode characteristics are measured with a voltage distribution ratio and supply voltage shown below.
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
K
Dy1
Dy2
Dy3
Dy4
Dy5
Dy6
Dy7
Dy8
Dy9
Dy10
Electrodes
Ratio
3
1
1
1
1
1
1
1
1
1
1
SuppIy Voltage: 1000 V, K: Cathode, Dy: Dynode, P: Anode
P
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2015 Hamamatsu Photonics K.K.
PHOTOMULTIPLIER TUBE R12199
Figure 1: Typical Spectral Response
TPMHB0931EA
108
Figure 3: Typical Dark Current
TPMHB0932EA
103
TPMHB0933EA
CATHODE
RADIANT
SENSITIVITY
107
102
DARK CURRENT (nA)
10
QUANTUM
EFFICIENCY
GAIN
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
100
Figure 2: Typical Gain
1
106
0.01
200
100
105
0.1
300
400
500
600
700
104
500
800
101
600
WAVELENGTH (nm)
700
800 900 1000
1200
1500
10-1
500
SUPPLY VOLTAGE (V)
600
700
800 900 1000
1200
1500
SUPPLY VOLTAGE (V)
Figure 4: Dimensional Outline and Basing Diagram (Unit: mm)
80 ± 2
72 MIN.
DY6
110 ± 3
51.9 ± 2.0
138 MAX.
DY5
PHOTOCATHODE
DY4
6
7
DY7
8
IC
9
5
10
DY3 4
DY2
14 PIN BASE
JEDEC
No. B14-38
DY8
11 DY9
3
12
2
DY1
1
IC
14
13
DY10
P
K
BOTTOM VIEW
(Basing Diagram)
56.5 ± 0.5
TPMHA0615EA
* HAMAMATSU also provides C11152 series compact high voltage power supply modules.
HAMAMATSU PHOTONICS K.K.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Electron Tube Division
314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
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TPMH1356E01
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JUL. 2015 IP
China: Hamamatsu Photonics (China) Co., Ltd.: B1201 Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: [email protected]
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