Datasheet Download

SCH2080KE
Data Sheet
N-channel SiC power MOSFET co-packaged with SiC-SBD
lOutline
VDSS
1200V
RDS(on) (Typ.)
80mW
ID
40A
PD
262W
lFeatures
TO-247
lInner circuit
1) Low on-resistance
(1) Gate
(2) Drain
(3) Source
2) Fast switching speed
3) Fast reverse recovery
4) Low VSD
*1 Body Diode
*2 SBD
5) Easy to parallel
6) Simple to drive
lPackaging specifications
7) Pb-free lead plating ; RoHS compliant
Packing
lApplication
Reel size (mm)
-
Tape width (mm)
-
・Solar inverters
Tube
Type
・DC/DC converters
Basic ordering unit (pcs)
30
・Induction heating
Packing code
C
・Motor drives
Marking
SCH2080KE
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
VDSS
1200
V
Tc = 25°C
ID *1
40
A
Tc = 100°C
ID *1
28
A
ID,pulse *2
80
A
VGSS
-6 to 22
V
VGSS-surge*3
-10 to 26
V
Power dissipation (Tc = 25°C)
PD
262
W
Junction temperature
Tj
175
°C
Tstg
-55 to +175
°C
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage (DC)
Gate - Source surge voltage (Tsurge ˂ 300nsec)
Range of storage temperature
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© 2015 ROHM Co., Ltd. All rights reserved.
1/13
2015.11 - Rev.F
Data Sheet
SCH2080KE
lThermal resistance
Values
Parameter
Symbol
Unit
Min.
Typ.
Max.
Thermal resistance, junction - case
RthJC
-
0.44
0.57
°C/W
Thermal resistance, junction - ambient
RthJA
-
-
50
°C/W
Soldering temperature, wavesoldering for 10s
Tsold
-
-
265
°C
lElectrical characteristics (Ta = 25°C)
Values
Parameter
Drain - Source breakdown
voltage
Symbol
V(BR)DSS
Conditions
Unit
Min.
Typ.
Max.
1200
-
-
V
Tj = 25°C
-
20
400
A
Tj = 150°C
-
170
-
VGS = 0V, ID = 1mA
VDS = 1200V, VGS = 0V
Zero gate voltage
drain current
IDSS
Gate - Source leakage current
IGSS+
VGS = +22V, VDS = 0V
-
-
100
nA
Gate - Source leakage current
IGSS-
VGS = -6V, VDS = 0V
-
-
-100
nA
1.6
2.8
4.0
V
Gate threshold voltage
VGS (th)
VDS = VGS, ID = 4.4mA
*1 Limited only by maximum temperature allowed.
*2 PW  10s, Duty cycle  1%
*3 Example of acceptable Vgs waveform
*4 Pulsed
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© 2015 ROHM Co., Ltd. All rights reserved.
2/13
2015.11 - Rev.F
Data Sheet
SCH2080KE
lElectrical characteristics (Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
-
80
117
Tj = 125°C
-
125
-
f = 1MHz, open drain
-
6.3
-
W
S
VGS = 18V, ID = 10A
Static drain - source
on - state resistance
Gate input resistance
RDS(on) *4 Tj = 25°C
RG
Transconductance
gfs *4
VDS = 10V, ID = 10A
-
3.7
-
Input capacitance
Ciss
VGS = 0V
-
1850
-
Output capacitance
Coss
VDS = 800V
-
175
-
Reverse transfer capacitance
Crss
f = 1MHz
-
20
-
VDD = 400V, VGS = 18V
-
37
-
tr *4
ID = 10A
-
33
-
td(off) *4
RL = 40W
-
70
-
tf *4
RG = 0W
-
28
-
-
218
-
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Turn - on switching loss
Turn - off switching loss
td(on) *4
Eon
*4
Eoff *4
mW
pF
ns
VDD = 600V, ID=10A
VGS = 18V/0V
RG = 0W, L=500H
*Eon includes diode
reverse recovery
J
-
64
-
lGate Charge characteristics (Ta = 25°C)
Values
Parameter
Symbol
*4
Conditions
Unit
Min.
Typ.
Max.
VDD = 400V
-
106
-
Total gate charge
Qg
Gate - Source charge
Qgs *4
ID = 10A
-
27
-
Gate - Drain charge
Qgd *4
VGS = 18V
-
31
-
Gate plateau voltage
V(plateau)
VDD = 400V, ID = 10A
-
9.7
-
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© 2015 ROHM Co., Ltd. All rights reserved.
3/13
nC
V
2015.11 - Rev.F
Data Sheet
SCH2080KE
lInternal diode electrical characteristics (Source-Drain) (Ta = 25°C)
Values
Parameter
Symbol
Inverse diode continuous,
forward current
Conditions
Unit
IS *1
Min.
Typ.
Max.
-
-
40
A
-
-
80
A
-
1.3
-
V
-
37
-
ns
-
60
-
nC
-
2.4
-
A
Tc = 25°C
Inverse diode direct current,
pulsed
ISM *2
Forward voltage
VSD *4
Reverse recovery time
trr
VGS = 0V, IS = 10A
*4
Reverse recovery charge
Qrr *4
Peak reverse recovery current
Irrm *4
IF = 10A, VR = 400V
di/dt = 150A/s
lTypical Transient Thermal Characteristics
Symbol
Value
Rth1
0.078
Rth2
0.197
Rth3
0.162
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© 2015 ROHM Co., Ltd. All rights reserved.
Unit
K/W
4/13
Symbol
Value
Cth1
0.005
Cth2
0.018
Cth3
0.249
Unit
Ws/K
2015.11 - Rev.F
Data Sheet
SCH2080KE
lElectrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
300
100
PW = 100us
PW = 1ms
Drain Current : ID [A]
Power Dissipation : PD [W]
250
200
150
100
10
Operation in this
area is limited
by RDS(ON)
1
PW = 10ms
50
Ta = 25ºC
Single Pulse
0
PW = 100ms
0.1
0
50
100
150
200
0.1
Junction Temperature : Tj [°C]
1
10
100
1000
10000
Drain - Source Voltage : VDS [V]
Fig.3 Typical Transient Thermal
Resistance vs. Pulse Width
Transient Thermal Resistance : Rth [K/W]
1
Ta = 25ºC
Single
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width : PW [s]
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© 2015 ROHM Co., Ltd. All rights reserved.
5/13
2015.11 - Rev.F
Data Sheet
SCH2080KE
lElectrical characteristic curves
Fig.4 Typical Output Characteristics(I)
Fig.5 Typical Output Characteristics(II)
40
VGS= 20V
VGS= 16V
35
18
VGS= 18V
VGS= 14V
Drain Current : ID [A]
Drain Current : ID [A]
VGS= 18V
VGS= 14V
16
30
25
20
VGS= 12V
15
VGS= 10V
10
5
Ta = 25ºC
Pulsed
14
VGS= 12V
12
10
8
6
VGS= 10V
4
Ta = 25ºC
Pulsed
2
0
0
0
2
4
6
8
0
10
1
2
3
4
5
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Fig.6 Typical Output Characteristics(I)
Fig.7 Typical Output Characteristics(II)
20
40
VGS = 20V
35
VGS = 18V
30
VGS = 16V
25
VGS = 14V
Drain Current : ID [A]
Drain Current : ID [A]
VGS= 16V
VGS= 20V
20
VGS = 12V
20
VGS = 10V
15
10
Ta = 150ºC
Pulsed
5
18
VGS = 20V
16
VGS = 18V
14
VGS = 16V
12
VGS = 14V
VGS = 12V
10
VGS= 10V
8
6
4
Ta = 150ºC
Pulsed
2
0
0
0
2
4
6
8
0
10
Drain - Source Voltage : VDS [V]
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© 2015 ROHM Co., Ltd. All rights reserved.
1
2
3
4
5
Drain - Source Voltage : VDS [V]
6/13
2015.11 - Rev.F
Data Sheet
SCH2080KE
lElectrical characteristic curves
Fig.8 Typical Transfer Characteristics
Fig.9 Typical Transfer Characteristics (II)
40
100
VDS = 10V
Pulsed
30
Drain Current : ID [A]
10
Drain Current : ID [A]
VDS = 10V
Pulsed
35
Ta= 150ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
1
0.1
25
20
Ta= 150ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
15
10
5
0
0.01
0
2
4
6
8
0
10 12 14 16 18 20
2
Gate - Source Voltage : VGS [V]
6
8
10 12 14 16 18 20
Gate - Source Voltage : VGS [V]
Fig.10 Gate Threshold Voltage
vs. Junction Temperature
Fig.11 Transconductance vs. Drain Current
5
10
VDS = 10V
ID = 10mA
4.5
VDS = 10V
Pulsed
4
Transconductance : gfs [S]
Gate Threshold Voltage : V GS(th) [V]
4
3.5
3
2.5
2
1.5
1
1
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.1
0.5
0
-50
0
50
100
0.01
0.01
150
1
10
100
Drain Current : ID [A]
Junction Temperature : Tj [°C]
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© 2015 ROHM Co., Ltd. All rights reserved.
0.1
7/13
2015.11 - Rev.F
Data Sheet
SCH2080KE
lElectrical characteristic curves
Fig.12 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage
0.15
Ta = 25ºC
Pulsed
0.6
0.4
ID = 20A
0.2
ID = 10A
0
6
8
10
12
14
16
18
20
22
Static Drain - Source On-State Resistance
: RDS(on) [Ω]
Static Drain - Source On-State Resistance
: RDS(on) [Ω]
0.8
Fig.13 Static Drain - Source On - State
Resistance vs. Junction Temperature
VGS = 18V
Pulsed
ID = 20A
0.1
ID = 10A
0.05
0
-50
0
50
100
150
Junction Temperature : Tj [ºC]
Gate - Source Voltage : VGS [V]
Static Drain - Source On-State Resistance
: RDS(on) [Ω]
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current
1
VGS = 18V
Pulsed
0.1
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.01
0.1
1
10
100
Drain Current : ID [A]
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8/13
2015.11 - Rev.F
Data Sheet
SCH2080KE
lElectrical characteristic curves
Fig.15 Typical Capacitance
vs. Drain - Source Voltage
Fig.16 Coss Stored Energy
10000
60
Ciss
1000
Capacitance : C [pF]
Coss Stored Energy : EOSS [uJ]
Ta = 25ºC
Coss
100
Crss
10
Ta = 25ºC
f = 1MHz
VGS = 0V
1
0.1
1
10
100
50
40
30
20
10
0
1000
0
400
600
800
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Fig.17 Switching Characteristics
Fig.18 Dynamic Input Characteristics
20
10000
1000
Gate - Source Voltage : VGS [V]
Ta = 25ºC
VDD = 400V
VGS = 18V
RG = 0Ω
Pulsed
tf
Switching Time : t [ns]
200
td(off)
100
tr
10
td(on)
Ta = 25ºC
VDD = 400V
ID = 10A
Pulsed
15
10
5
0
1
0.01
0.1
1
10
100
0
Drain Current : ID [A]
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20
40
60
80
100
120
Total Gate Charge : Qg [nC]
9/13
2015.11 - Rev.F
Data Sheet
SCH2080KE
lElectrical characteristic curves
Fig.19 Typical Switching Loss
vs. Drain - Source Voltage
Fig.20 Typical Switching Loss
vs. Drain Current
400
1200
300
250
Ta = 25ºC
VDD=600V
VGS = 18V/0V
RG=0W
L=500H
1000
Switching Energy : E [J]
Switching Energy : E [J]
1100
Ta = 25ºC
ID=10A
VGS = 18V/0V
RG=0W
L=500H
350
Eon
200
150
100
50
Eoff
900
800
Eon
700
600
500
400
300
200
Eoff
100
0
0
0
200
400
600
800
0
1000
5
10
15
20
25
30
35
Drain - Current : ID [A]
Drain - Source Voltage : VDS [V]
Fig.21 Typical Switching Loss
vs. External Gate Resistance
600
Ta = 25ºC
VDD=600V
ID=10A
VGS = 18V/0V
L=500H
550
Switching Energy : E [J]
500
450
400
Eon
350
300
250
200
150
Eoff
100
50
0
0
5
10
15
20
25
30
External Gate Resistance : RG [W]
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© 2015 ROHM Co., Ltd. All rights reserved.
10/13
2015.11 - Rev.F
Data Sheet
SCH2080KE
lElectrical characteristic curves
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
1000
VGS = 0V
Pulsed
Reverse Recovery Time : trr [ns]
Inverse Diode Forward Current : IS [A]
100
10
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
1
0.1
Ta = 25ºC
di / dt = 150A / us
VR = 400V
VGS = 0V
Pulsed
100
10
0.01
0
0.5
1
1.5
1
2
100
Inverse Diode Forward Current : IS [A]
Source - Drain Voltage : VSD [V]
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© 2015 ROHM Co., Ltd. All rights reserved.
10
11/13
2015.11 - Rev.F
Data Sheet
SCH2080KE
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Switching Energy Measurement Circuit
Fig.3-2 Switching Waveforms
Eon = ID×VDS
Same type
device as
D.U.T.
VDS
Irr
Eoff = ID×VDS
Vsurge
D.U.T.
ID
ID
Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform
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© 2015 ROHM Co., Ltd. All rights reserved.
12/13
2015.11 - Rev.F
Data Sheet
SCH2080KE
lDimensions (Unit : mm)
TO-247
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© 2015 ROHM Co., Ltd. All rights reserved.
13/13
2015.11 - Rev.F
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
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13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
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R1102B
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