SCT3030AL Data Sheet N-channel SiC power MOSFET lOutline VDSS 650V RDS(on) (Typ.) 30mW ID 70A PD 262W TO-247N (1)(2)(3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode 4) Easy to parallel 5) Simple to drive lPackaging specifications 6) Pb-free lead plating ; RoHS compliant Packing lApplication Tube Reel size (mm) - Tape width (mm) - Type • Solar inverters Basic ordering unit (pcs) • DC/DC converters Taping code • Switch mode power supplies Marking 30 C11 SCT3030AL • Induction heating • Motor drives lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit VDSS 650 V Tc = 25°C ID *1 70 A Tc = 100°C ID *1 49 A ID,pulse *2 175 A Gate - Source voltage VGSS -4 to 22 V Junction temperature Tj 175 °C Tstg -55 to +175 °C Drain - Source voltage Continuous drain current Pulsed drain current Range of storage temperature www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/13 2016.04 - Rev.A Data Sheet SCT3030AL lThermal resistance Values Parameter Symbol RthJC Thermal resistance, junction - case Unit Min. Typ. Max. - 0.44 0.57 °C/W lElectrical characteristics (Ta = 25°C) Values Parameter Drain - Source breakdown voltage Symbol V(BR)DSS Conditions Unit Min. Typ. Max. 650 - - V Tj = 25°C - 1 10 mA Tj = 150°C - 2 - VGS = 0V, ID = 1mA VDS = 650V, VGS = 0V Zero gate voltage drain current IDSS Gate - Source leakage current IGSS+ VGS = +22V, VDS = 0V - - 100 nA Gate - Source leakage current IGSS- VGS = -4V, VDS = 0V - - -100 nA 2.7 - 5.6 V - 30 39 mW Tj = 125°C - 39.6 - f = 1MHz, open drain - 7 - Gate threshold voltage VGS (th) VDS = 10V, ID = 13.3mA VGS = 18V, ID = 27A Static drain - source on - state resistance Gate input resistance www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. RDS(on) *3 Tj = 25°C RG 2/13 W 2016.04 - Rev.A Data Sheet SCT3030AL lElectrical characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Transconductance gfs *3 VDS = 10V, ID = 27A - 9.4 - Input capacitance Ciss VGS = 0V - 1526 - Output capacitance Coss VDS = 500V - 89 - Reverse transfer capacitance Crss f = 1MHz - 42 - Effective output capacitance, energy related Co(er) VGS = 0V VDS = 0V to 300V - 230 - Turn - on delay time td(on) *3 VDD = 300V, ID = 18A - 22 - VGS = 18V/0V - 41 - td(off) *3 RL = 17W - 48 - tf *3 RG = 0W - 27 - - 168 - tr *3 Rise time Turn - off delay time Fall time Turn - on switching loss Turn - off switching loss Eon *3 Eoff *3 S pF pF ns VDD = 300V, ID=27A VGS = 18V/0V RG = 0W L=250mH *Eon includes diode reverse recovery mJ - 112 - lGate Charge characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Total gate charge Qg *3 VDD = 300V - 104 - Gate - Source charge Qgs *3 ID = 27A - 25 - Gate - Drain charge Qgd VGS = 18V - 42 - VDD = 300V, ID = 27A - 9.6 - Gate plateau voltage *3 V(plateau) nC V *1 Limited only by maximum temperature allowed. *2 PW 10ms, Duty cycle 1% *3 Pulsed www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 3/13 2016.04 - Rev.A Data Sheet SCT3030AL lBody diode electrical characteristics (Source-Drain) (Ta = 25°C) Values Parameter Inverse diode continuous, forward current Symbol Conditions IS *1 Unit Min. Typ. Max. - - 70 A - - 175 A - 3.2 - V - 26 - ns - 130 - nC - 10 - A Tc = 25°C Inverse diode direct current, pulsed ISM *2 Forward voltage VSD *3 Reverse recovery time trr *3 Reverse recovery charge Qrr *3 Peak reverse recovery current Irrm *3 www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. VGS = 0V, IS = 27A IF = 27A, VR = 600V di/dt = 1100A/ms 4/13 2016.04 - Rev.A Data Sheet SCT3030AL lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 300 1000 250 Drain Current : ID [A] Power Dissipation : PD [W] Operation in this area is limited by RDS(on) 200 150 100 PW = 100ms 100 PW = 1ms 10 PW = 10ms 1 50 PW = 100ms Ta = 25ºC Single Pulse 0 0 50 100 150 0.1 200 0.1 1 10 100 1000 Drain - Source Voltage : VDS [V] Junction Temperature : Tj [°C] Transient Thermal Resistance : Rth [K/W] Fig.3 Typical Transient Thermal Resistance vs. Pulse Width 1 0.1 0.01 Ta = 25ºC Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width : PW [s] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 5/13 2016.04 - Rev.A Data Sheet SCT3030AL lElectrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) 35 70 20V 18V 16V 50 30 14V Drain Current : ID [A] Drain Current : ID [A] 60 20V Ta = 25ºC Pulsed 12V 40 30 20 10V 10 18V 16V 25 Ta = 25ºC Pulsed 12V 20 15 10V 10 VGS= 8V 5 VGS= 8V 0 0 0 2 4 6 8 10 0 Drain - Source Voltage : VDS [V] 1 2 3 4 5 Drain - Source Voltage : VDS [V] Fig.6 Tj = 150°C Typical Output Characteristics(I) Fig.7 Tj = 150°C Typical Output Characteristics(II) 35 70 20V 18V 20V 14V 18V 16V 50 30 Drain Current : ID [A] 60 Drain Current : ID [A] 14V 12V 10V 40 30 20 VGS= 8V 10 14V 16V 12V 25 10V 20 15 VGS= 8V 10 5 Ta = 150ºC Pulsed Ta = 150ºC Pulsed 0 0 0 2 4 6 8 0 10 Drain - Source Voltage : VDS [V] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1 2 3 4 5 Drain - Source Voltage : VDS [V] 6/13 2016.04 - Rev.A Data Sheet SCT3030AL lElectrical characteristic curves Fig.8 Typical Transfer Characteristics (I) Fig.9 Typical Transfer Characteristics (II) 70 100 VDS = 10V Pulsed 60 10 Drain Current : ID [A] Drain Current : ID [A] VDS = 10V Pulsed Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 1 0.1 50 40 Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 30 20 10 0 0.01 0 2 4 6 8 0 10 12 14 16 18 20 Fig.10 Gate Threshold Voltage vs. Junction Temperature 6 8 10 12 14 16 18 20 Fig.11 Transconductance vs. Drain Current 6 10 VDS = 10V ID = 13.3mA 5 VDS = 10V Pulsed Transconductance : gfs [S] Gate Threshold Voltage : VGS(th) [V] 4 Gate - Source Voltage : VGS [V] Gate - Source Voltage : VGS [V] 4 3 2 1 0 -50 2 1 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.1 0 50 100 150 200 0.1 Junction Temperature : Tj [°C] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1 10 Drain Current : ID [A] 7/13 2016.04 - Rev.A Data Sheet SCT3030AL lElectrical characteristic curves 0.12 Ta = 25ºC Pulsed 0.1 0.08 ID = 47A 0.06 ID = 27A 0.04 0.02 0 6 8 10 12 14 16 18 20 Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature Static Drain - Source On-State Resistance : RDS(on) [W] Static Drain - Source On-State Resistance : RDS(on) [W] Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage 22 Gate - Source Voltage : VGS [V] 0.12 0.1 VGS = 18V Pulsed 0.08 0.06 ID = 47A 0.04 ID = 27A 0.02 0 -50 0 50 100 150 200 Junction Temperature : Tj [ºC] Static Drain - Source On-State Resistance : RDS(on) [W] Fig.14 Static Drain - Source On - State Resistance vs. Drain Current 0.1 Ta = 150ºC Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC VGS = 18V Pulsed 0.01 1 10 100 Drain Current : ID [A] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 8/13 2016.04 - Rev.A Data Sheet SCT3030AL lElectrical characteristic curves Fig.15 Typical Capacitance vs. Drain - Source Voltage Fig.16 Coss Stored Energy 20 10000 Coss Stored Energy : EOSS [mJ] Ta = 25ºC Capacitance : C [pF] Ciss 1000 Coss 100 Crss 10 Ta = 25ºC f = 1MHz VGS = 0V 15 10 5 0 1 0.1 1 10 100 0 1000 Drain - Source Voltage : VDS [V] 200 300 Fig.18 Dynamic Input Characteristics 10000 20 100 Gate - Source Voltage : VGS [V] Ta = 25ºC VDD = 300V VGS = 18V RG = 0W Pulsed 1000 td(off) tr td(on) 10 400 Drain - Source Voltage : VDS [V] Fig.17 Switching Characteristics tf Switching Time : t [ns] 100 1 15 Ta = 25ºC VDD = 300V ID = 27A Pulsed 10 5 0 0.1 1 10 100 0 10 20 30 40 50 60 70 80 90 100110 Total Gate Charge : Qg [nC] Drain Current : ID [A] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 9/13 2016.04 - Rev.A Data Sheet SCT3030AL lElectrical characteristic curves Fig.19 Typical Switching Loss vs. Drain - Source Voltage Fig.20 Typical Switching Loss vs. Drain Current 400 1200 Switching Energy : E [mJ] 300 250 Switching Energy : E [mJ] Ta = 25ºC ID=27A VGS = 18V/0V RG=0W L=250mH 350 Eon 200 150 Eoff 100 Ta = 25ºC VDD=300V VGS = 18V/0V RG=0W L=250mH 1000 800 Eon 600 400 Eoff 200 50 0 0 100 200 300 400 0 500 Drain - Source Voltage : VDS [V] 10 20 30 40 50 60 70 80 Drain Current : ID [A] Fig.21 Typical Switching Loss vs. External Gate Resistance Switching Energy : E [mJ] 1200 Ta = 25ºC VDD=300V ID=27A VGS = 18V/0V L=250mH 1000 800 Eon 600 400 Eoff 200 0 0 5 10 15 20 25 30 External Gate Resistance : RG [W] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 10/13 2016.04 - Rev.A Data Sheet SCT3030AL lElectrical characteristic curves Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current 1000 100 VGS = 0V Pulsed Reverse Recovery Time : trr [ns] Inverse Diode Forward Current : IS [A] Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage 10 1 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.1 Ta = 25ºC di / dt = 1100A / us VR = 300V VGS = 0V Pulsed 100 10 0.01 0 1 2 3 4 5 6 7 1 8 Source - Drain Voltage : VSD [V] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 10 100 Inverse Diode Forward Current : IS [A] 11/13 2016.04 - Rev.A Data Sheet SCT3030AL lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms Eon = ID×VDS Same type device as D.U.T. VDS Irr Eoff = ID×VDS Vsurge D.U.T. ID ID Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform D.U.T. www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 12/13 2016.04 - Rev.A Data Sheet SCT3030AL lDimensions TO-247 www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 13/13 2016.04 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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