S4001 Datasheet N-channel SiC power MOSFET bare die VDSS 650V RDS(on) (Typ.) 30m ID 70A*1 Features Inner circuit 1) Low on-resistance (2) 2) Fast switching speed (1) Gate (2) Drain (3) Source 3) Fast reverse recovery *1 (1) 4) Easy to parallel *1 Body Diode 5) Simple to drive (3) Application ・Solar inverters ・DC/DC converters ・Switch mode power supplies ・Induction heating ・Motor drives Absolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Tc = 25°C Pulsed drain current Symbol Value Unit VDSS 650 V ID *1 70 A 175 A ID,pulse *2 Gate - Source voltage VGSS 4 to 22 V Junction temperature Tj 175 °C Tstg 55 to 175 °C Range of storage temperature www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/11 2016.06 - Rev.B Data Sheet S4001 Electrical characteristics (Ta = 25°C) Values Parameter Drain - Source breakdown voltage Symbol V(BR)DSS Unit Conditions Min. Typ. Max. 650 - - V Tj = 25°C - 1 10 A Tj = 150°C - 2 - VGS = 0V, ID = 1mA VDS = 650V, VGS = 0V Zero gate voltage drain current IDSS Gate - Source leakage current IGSS VGS = 22V, VDS = 0V - - 100 nA Gate - Source leakage current IGSS VGS = 4V, VDS = 0V - - 100 nA 2.7 - 5.6 V - 30 37.5 m Tj = 125°C - 39.6 - f = 1MHz, open drain - 7 - Gate threshold voltage VGS (th) VDS = 10V, ID = 13.3mA VGS = 18V, ID = 27A Static drain - source on - state resistance Gate input resistance www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. RDS(on) *3 Tj = 25°C RG 2/11 2016.06 - Rev.B Data Sheet S4001 Electrical characteristics (Ta = 25°C) Values Parameter Symbol *3 Conditions Unit Min. Typ. Max. VDS = 10V, ID = 27A - 9.4 - Transconductance gfs Input capacitance Ciss VGS = 0V - 1526 - Output capacitance Coss VDS = 500V - 89 - Reverse transfer capacitance Crss f = 1MHz - 42 - Effective output capacitance, energy related Co(er) VGS = 0V VDS = 0V to 300V - 230 - Turn - on delay time td(on) *3 VDD = 300V, ID = 18A - 22 - VGS = 18V/0V - 41 - RL = 17 - 48 - RG = 0 - 27 - - 168 - Rise time tr Turn - off delay time Fall time Turn - off switching loss *3 td(off) tf Turn - on switching loss *3 *3 Eon Eoff *3 *3 S pF pF ns VDD = 300V, ID=27A VGS = 18V/0V RG = 0 L=250H *Eon includes diode reverse recovery J - 112 - Gate Charge characteristics (Ta = 25°C) Values Parameter Symbol Total gate charge Qg *3 Gate - Source charge Qgs Gate - Drain charge Qgd *3 Gate plateau voltage V(plateau) *3 Conditions Unit Min. Typ. Max. VDD = 300V - 104 - ID = 27A - 25 - VGS = 18V - 42 - VDD = 300V, ID = 27A - 9.6 - nC V *1 For Tj=175°C and thermal dissiparion to ambience of 165W or more. Limited only by maximum temperature allowed. *2 PW 10s, Duty cycle 1% *3 Pulsed www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 3/11 2016.06 - Rev.B Data Sheet S4001 Body diode electrical characteristics (Source-Drain) (Ta = 25°C) Values Parameter Inverse diode continuous, forward current Symbol Conditions IS *1 Unit Min. Typ. Max. - - 70 A - - 175 A - 3.2 - V - 26 - ns - 130 - nC - 10 - A Tc = 25°C Inverse diode direct current, pulsed ISM *2 Forward voltage VSD Reverse recovery time *3 trr *3 *3 Reverse recovery charge Qrr Peak reverse recovery current Irrm *3 www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. VGS = 0V, IS = 27A IF = 27A, VR = 300V di/dt = 1100A/s 4/11 2016.06 - Rev.B Data Sheet S4001 Electrical characteristic curves Fig.1 Typical Output Characteristics(I) Fig.2 Typical Output Characteristics(II) 35 70 20V 18V 16V 50 Ta = 25ºC Pulsed 14V 40 12V 30 10V 20 10 25 20V 18V 16V 14V 20 12V 30 Drain Current : ID [A] Drain Current : ID [A] 60 10V 15 10 VGS= 8V 5 VGS= 8V 0 0 0 2 4 6 8 10 0 Drain - Source Voltage : VDS [V] 1 2 3 4 5 Drain - Source Voltage : VDS [V] Fig.3 Tj = 150ºC Typical Output Characteristics(I) Fig.4 Tj = 150ºC Typical Output Characteristics(II) 35 70 20V 60 18V 30 12V 12V Drain Current : ID [A] 25 40 10V 30 VGS= 8V 10 14V 18V 14V 20 16V 20V 16V 50 Drain Current : ID [A] Ta = 25ºC Pulsed 10V 20 15 VGS= 8V 10 5 Ta = 150ºC Pulsed Ta = 150ºC Pulsed 0 0 0 2 4 6 8 0 10 Drain - Source Voltage : VDS [V] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1 2 3 4 5 Drain - Source Voltage : VDS [V] 5/11 2016.06 - Rev.B Data Sheet S4001 Electrical characteristic curves Fig.5 Typical Transfer Characteristics (I) Fig.6 Typical Transfer Characteristics (II) 70 100 VDS = 10V Pulsed Drain Current : ID [A] 10 Drain Current : ID [A] VDS = 10V Pulsed 60 Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= 25ºC 1 0.1 50 40 Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= 25ºC 30 20 10 0.01 0 0 2 4 6 8 0 10 12 14 16 18 20 Gate - Source Voltage : VGS [V] 4 6 8 10 12 14 16 18 20 Gate - Source Voltage : VGS [V] Fig.7 Gate Threshold Voltage vs. Junction Temperature Fig.8 Transconductance vs. Drain Current 6 10 VDS = 10V ID = 13.3mA 5 VDS = 10V Pulsed Transconductance : gfs [S] Gate Threshold Voltage : V GS(th) [V] 2 4 3 2 1 0 1 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = 25ºC 0.1 -50 0 50 100 150 200 0.1 Junction Temperature : Tj [ºC] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1 10 Drain Current : ID [A] 6/11 2016.06 - Rev.B Data Sheet S4001 Electrical characteristic curves Fig.9 Static Drain - Source On - State Resistance vs. Gate - Source Voltage Fig.10 Static Drain - Source On - State Resistance vs. Junction Temperature 0.12 Ta = 25ºC Pulsed 0.1 0.08 0.06 ID = 47A 0.04 ID = 27A 0.02 0 8 10 12 14 16 18 20 22 Static Drain - Source On-State Resistance : RDS(on) [] Static Drain - Source On-State Resistance : RDS(on) [] 0.12 Gate - Source Voltage : VGS [V] 0.1 VGS = 18V Pulsed 0.08 0.06 ID = 47A 0.04 ID = 27A 0.02 0 -50 0 50 100 150 200 Junction Temperature : Tj [ºC] Fig.11 Static Drain - Source On - State Resistance vs. Drain Current Static Drain - Source On-State Resistance : RDS(on) [] 0.1 Ta = 150ºC Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = 25ºC VGS = 18V Pulsed 0.01 1 10 100 Drain Current : ID [A] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 7/11 2016.06 - Rev.B Data Sheet S4001 Electrical characteristic curves Fig.12 Typical Capacitance vs. Drain - Source Voltage Fig.13 Coss Stored Energy 10000 20 Ta = 25ºC Coss Stored Energy : EOSS [J] Ciss Capacitance : C [pF] 1000 Coss Crss 100 10 Ta = 25ºC f = 1MHz VGS = 0V 1 15 10 5 0 0.1 1 10 100 1000 0 Drain - Source Voltage : VDS [V] 300 400 Fig.15 Dynamic Input Characteristics 20 10000 tf Gate - Source Voltage : VGS [V] Ta = 25ºC VDD = 300V VGS = 18V RG = 0 Pulsed 1000 Switching Time : t [ns] 200 Drain - Source Voltage : VDS [V] Fig.14 Switching Characteristics 100 100 td(off) tr td(on) 10 15 Ta = 25ºC VDD = 300V ID = 27A Pulsed 10 5 0 1 0.1 1 10 0 10 20 30 40 50 60 70 80 90 100110 100 Drain Current : ID [A] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. Total Gate Charge : Qg [nC] 8/11 2016.06 - Rev.B Data Sheet S4001 Electrical characteristic curves Fig.16 Typical Switching Loss vs. Drain - Source Voltage Fig.17 Typical Switching Loss vs. Drain Current 1200 400 Ta = 25ºC ID=27A VGS = 18V/0V RG=0 L=250H 300 250 Eon 200 Ta = 25ºC VDD=300V VGS = 18V/0V RG=0 L=250H 1000 Switching Energy : E [J] Switching Energy : E [J] 350 150 100 Eoff 800 600 Eon 400 Eoff 200 50 0 0 100 200 300 400 0 500 Drain - Source Voltage : VDS [V] 10 20 30 40 50 60 70 80 Drain Current : ID [A] Fig.18 Typical Switching Loss vs. External Gate Resistance 1200 Ta = 25ºC VDD=300V ID=27A VGS = 18V/0V L=250H Switching Energy : E [J] 1000 800 Eoff 600 Eon 400 200 0 0 5 10 15 20 25 30 External Gate Resistance : RG [] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 9/11 2016.06 - Rev.B Data Sheet S4001 Electrical characteristic curves Fig.19 Inverse Diode Forward Current vs. Source - Drain Voltage Fig.20 Reverse Recovery Time vs.Inverse Diode Forward Current 1000 VGS = 0V Pulsed Reverse Recovery Time : trr [ns] Inverse Diode Forward Current : IS [A] 100 10 1 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = 25ºC 0.1 0.01 Ta = 25ºC di / dt = 1100A / us VR = 300V VGS = 0V Pulsed 100 10 0 1 2 3 4 5 6 7 8 1 Source - Drain Voltage : VSD [V] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 10 100 Inverse Diode Forward Current : IS [A] 10/11 2016.06 - Rev.B Data Sheet S4001 Measurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms Eon = ID×VDS Same type device as D.U.T. VDS Irr Eoff = ID×VDS Vsurge D.U.T. ID ID Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform D.U.T. www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 11/11 2016.06 - Rev.B Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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