SiC Power Module Data Sheet BSM080D12P2C008 lApplication lCircuit diagram Motor drive 1 Inverter, Converter Photovoltaics, wind power generation. 10 9 8(N.C) Induction heating equipment. 3,4 5 6 7(N.C) lFeatures 2 1) Low surge, low switching loss. *Do not connnect to NC pin. 2) High-speed switching possible. 3) Reduced temperature dependence. lConstruction This product is a half bridge module consisting of SiC-DMOS and SiC SBD from ROHM. lDimensions & Pin layout (Unit : mm) 10 9 8 7 6 5 4 1 2 3 (M2.6 FOR SELF-TAPPING SCREW) www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/10 2016.03 - Rev.A Data Sheet BSM080D12P2C008 lAbsolute maximum ratings (Tj = 25°C) Parameter Conditions Symbol VDSS G-S short Drain-source voltage Gate-source voltage(+) VGSS Gate-source voltage(-) G - S voltage (tsurge<300nsec) VGSSsurge ID Drain current *1 IDRM IS Source current *1 ISRM Total power disspation *3 Max junction temperature Junction temperature Storage temperature Ptot Tjmax Tjop Tstg Isolation voltage Visol Limit 1200 22 D-S short Unit V -6 -10 to 26 D-S short DC(Tc=60°C) 80 2 160 Pulse (Tc=60°C) 1ms * DC(Tc = 60°C) VGS=18V 80 2 160 Pulse (Tc=60°C) 1ms VGS=18V * Tc=25°C 600 175 A W -40 to150 -40 to125 °C 2500 Vrms Terminals to baseplate, f=60Hz AC 1min. 4.5 N·m Mounting to heat shink : M5 screw 3.5 (*1) Case temperature (Tc) is defined on the surface of base plate just under the chips. (*2) Repetition rate should be kept within the range where temperature rise if die should not exceed T jmax. Mounting torque Main Terminals : M6 screw - (*3) Tj is less than 175°C Example of acceptable VGS waveform +26V tsurge +22V 0V tsurge -6V +10V www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 2/10 2016.03 - Rev.A Data Sheet BSM080D12P2C008 lElectrical characteristics (Tj=25°C) Parameter Symbol On-state static Drain-Source Voltage Conditions Tj=25°C Tj=125°C Tj=150°C VDS(on) ID=80A, VGS=18V IDSS Drain cutoff current Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C VSD VGS=18V, IS=80A Gate-source threshold voltage Gate-source leak current Switching characteristics Input capacitance Gate Registance Stray Inductance Creepage distance Clearance distance Typ. 2.8 4.2 4.8 Max. 3.5 5.5 Unit - - 1.2 mA 1.6 -0.5 - 1.7 2.1 2.3 1.4 1.7 1.8 20 30 35 80 40 8 3.0 25 11.5 19.0 9.5 13.0 - 2.0 3.3 4 0.5 0.25 0.32 VDS=1200V, VGS=0V VGS=0V, IS=80A Source-drain voltage Min. - VGS(th) VDS=10V, ID=13.2mA VGS=22V, VDS=0V IGSS VGS= -6V, VDS=0V td(on) VGS(on)=18V, VGS(off)=0V tr VDS=600V trr ID=80A td(off) RG=0.82W tf inductive load Ciss VDS=10V, VGS=0V, f=1MHz RGint Tj=25°C Ls Terminal to heat sink Terminal to terminal Terminal to heat sink Terminal to terminal *4 Rth(j-c) DMOSFET (1/2 module) SBD (1/2 module) *4 Case to heat sink, per 1 module, Rth(c-f) Thermal grease appied *5 Junction-to-case thermal resistance Case-to-heat sink 0.035 Thermal resistance (*4) Measurement of Tc is to be done at the point just beneath the chip. (*5) Typical value is measured by using thermally conductive grease of l=0.9W / (m · K). lWaveform for switching test Eon=Id×Vds V V V mA ns nF W nH mm mm mm mm °C/W Eoff=Id×Vds trr Vsurge VDS 90% ID 2% 90% 10% 10% 2% 2% 10% 2% 90% VGS 10% td(on) www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. tr 3/10 td(off) tf 2016.03 - Rev.A Data Sheet BSM080D12P2C008 lElectrical characteristic curves (Typical) Fig.2 Drain-Source Voltage vs. Drain Current Fig.1 Typical Output Characteristics [ Tj=25ºC ] 8 160 VGS=18V VGS=16V Drain-Source Voltage : VDS [V] VGS=18V 120 Drain Current : ID [A] 7 VGS=20V VGS=14V 80 VGS=12V 40 VGS=10V 6 Tj=125ºC 5 Tj=150ºC 4 Tj=25ºC 3 2 1 0 0 0 2 4 6 0 8 40 Drain-Source Voltage : VDS [V] 120 160 Drain Current : ID [A] Fig.4 Static Drain - Source On-State Resistance vs. Junction Temperature Fig.3 Drain-Source Voltage vs. Gate-Source Voltage [ Tj=25ºC ] 8 7 6 5 4 3 ID=80A 2 ID=60A ID=40A ID=20A 1 0 12 14 16 18 20 22 24 Static Drain - Source On-State Resistance : RDS(on) [W] 0.1 Tj=25ºC Drain-Source Voltage : VDS [V] 80 Gate-Source Voltage : VGS [V] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. VGS=12V 0.08 VGS=14V VGS=16V 0.06 VGS=18V VGS=20V 0.04 0.02 ID=80A 0 0 50 100 150 200 250 Junction Temperature : Tj [ºC] 4/10 2016.03 - Rev.A Data Sheet BSM080D12P2C008 lElectrical characteristic curves (Typical) Fig.5 Forward characteristic of Diode Fig.6 Forward characteristic of Diode 1000 160 Tj=25ºC Tj=125ºC 100 Tj=25ºC Diode Forward Current : Is [A] Diode Forward Current : Is [A] Tj=150ºC Tj=150ºC Tj=125ºC Tj=25ºC 10 VGS=0V VGS=18V 1 Tj=125ºC 120 Tj=150ºC Tj=25ºC 80 Tj=125ºC Tj=150ºC 40 VGS=0V VGS=18V 0 0 1 2 3 4 0 Source-Drain Voltage : VSD [V] 2 3 4 Source-Drain Voltage : VSD [V] Fig.7 Drain Current vs. Gate-Source Voltage Fig.8 Drain Current vs. Gate-Source Voltage 160 1.0E+03 VDS=20V VDS=20V 1.0E+02 120 Tj=150ºC Drain Current : ID [A] Drain Current : ID [A] 1 Tj=125ºC 80 Tj=25ºC 40 Tj=150ºC 1.0E+01 1.0E+00 Tj=125ºC 1.0E-01 Tj=25ºC 1.0E-02 1.0E-03 0 1.0E-04 0 5 10 15 0 Gate-Source Voltage : VGS [V] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 5 10 15 Gate-Source Voltage : VGS [V] 5/10 2016.03 - Rev.A Data Sheet BSM080D12P2C008 lElectrical characteristic curves (Typical) Fig.10 Switching Characteristics [ Tj=125ºC ] Fig.9 Switching Characteristics [ Tj=25ºC ] 1000 Switching Time : t [ns] Switching Time : t [ns] 1000 100 td(off) tr tf td(on) 10 VDS=600V VGS(on)=18V VGS(off)= 0V RG=0.82W INDUCTIVE LOAD 1 100 td(off) tr tf td(on) 10 VDS=600V VGS(on)=18V VGS(off)= 0V RG=0.82W INDUCTIVE LOAD 1 0 50 100 150 200 0 Drain Current : ID [A] 100 150 200 Drain Current : ID [A] Fig.11 Switching Characteristics [ Tj=150ºC ] Fig.12 Switching Loss vs. Drain Current [ Tj=25ºC ] 3 100 Switching Loss [mJ] 1000 Switching Time : t [ns] 50 td(off) tr tf td(on) 10 VDS=600V VGS(on)=18V VGS(off)= 0V RG=0.82W INDUCTIVE LOAD 1 0 50 100 150 2 Eon 1 Eoff Err 0 0 200 Drain Current : ID [A] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. VDS=600V VGS(on)=18V VGS(off)= 0V RG=0.82W INDUCTIVE LOAD 50 100 150 200 Drain Current : ID [A] 6/10 2016.03 - Rev.A Data Sheet BSM080D12P2C008 lElectrical characteristic curves (Typical) Fig.13 Switching Loss vs. Drain Current [ Tj=125ºC ] Fig.14 Switching Loss vs. Drain Current [ Tj=150ºC ] 3 2 Eon 1 Eoff 2 50 100 150 Eoff Err 0 0 200 Drain Current : ID [A] 10 VDS=600V VGS(on)=18V VGS(off)= 0V RG=0.82W INDUCTIVE LOAD 1 Irr trr 10 10 VDS=600V VGS(on)=18V VGS(off)= 0V RG=0.82W INDUCTIVE LOAD 1 1 200 1 0 Drain Current : ID [A] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 200 100 Reverse Recovery Time : trr [ns] 10 Reverse Recovery Current : Irr [A] Reverse Recovery Time : trr [ns] trr 150 150 100 100 Irr 100 100 Fig.16 Recovery Characteristics vs. Drain Current [ Tj=125ºC ] 100 50 50 Drain Current : ID [A] Fig.15 Recovery Characteristics vs. Drain Current [ Tj=25ºC ] 0 Eon 1 Err 0 0 VDS=600V VGS(on)=18V VGS(off)= 0V RG=0.82W INDUCTIVE LOAD Reverse Recovery Current : Irr [A] VDS=600V VGS(on)=18V VGS(off)= 0V RG=0.82W INDUCTIVE LOAD Switching Loss [mJ] Switching Loss [mJ] 3 50 100 150 200 Drain Current : ID [A] 7/10 2016.03 - Rev.A Data Sheet BSM080D12P2C008 lElectrical characteristic curves (Typical) Fig.18 Switching Characteristics vs. Gate Resistance [ Tj=25ºC ] Fig.17 Recovery Characteristics vs. Drain Current [ Tj=150ºC ] Irr trr 10 10 VDS=600V VGS(on)=18V VGS(off)= 0V RG=0.82W INDUCTIVE LOAD 1 1000 Switching Time : t [ns] 100 Reverse Recovery Current : Irr [A] Reverse Recovery Time : trr [ns] 100 1 0 50 100 150 tf tr td(on) 100 10 200 0.1 Drain Current : ID [A] 1 10 100 Gate Resistance : RG [W] Fig.19 Switching Characteristics vs. Gate Resistance [ Tj=125ºC ] Fig.20 Switching Characteristics vs. Gate Resistance [ Tj=150ºC ] 1000 1000 VDS=600V ID=80A VGS(on)=18V VGS(off)= 0V INDUCTIVE LOAD VDS=600V ID=80A VGS(on)=18V VGS(off)= 0V INDUCTIVE LOAD td(off) tf tr 100 td(on) Switching Time : t [ns] Switching Time : t [ns] td(off) VDS=600V ID=80A VGS(on)=18V VGS(off)= 0V INDUCTIVE LOAD 10 td(off) tf tr 100 td(on) 10 0.1 1 10 100 0.1 Gate Resistance : RG [W] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1 10 100 Gate Resistance : RG [W] 8/10 2016.03 - Rev.A Data Sheet BSM080D12P2C008 lElectrical characteristic curves (Typical) Fig.21 Switching Loss vs. Gate Resistance [ Tj=25ºC ] Fig.22 Switching Loss vs. Gate Resistance [ Tj=125ºC ] 10 10 6 VDS=600V ID=80A VGS(on)=18V VGS(off)= 0V INDUCTIVE LOAD 8 Eon Switching Loss [mJ] Switching Loss [mJ] 8 VDS=600V ID=80A VGS(on)=18V VGS(off)= 0V INDUCTIVE LOAD Eoff 4 2 6 Eon Eoff 4 2 Err Err 0 0 0.1 1 10 0.1 100 Gate Resistance : RG [W] 1 10 100 Gate Resistance : RG [W] Fig.23 Switching Loss vs. Gate Resistance [ Tj=150ºC ] 10 VDS=600V ID=80A VGS(on)=18V VGS(off)= 0V INDUCTIVE LOAD Switching Loss [mJ] 8 6 Eon Eoff 4 2 Err 0 0.1 1 10 100 Gate Resistance : RG [W] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 9/10 2016.03 - Rev.A Data Sheet BSM080D12P2C008 lElectrical characteristic curves (Typical) Fig.24 Typical Capacitance vs. Drain-Source Voltage Fig.25 Gate Charge Characteristics [ Tj=25ºC ] 25 Ciss 1.E-08 Capasitance : C [nF] Gate-Source Voltage : VGS [V] 1.E-07 Coss 1.E-09 1.E-10 Crss Tj=25ºC VGS=0V 200kHz 1.E-11 0.01 20 15 10 5 ID=80A Tj=25ºC VDS=600V 0 0.1 1 10 100 0 1000 Drain-Source Voltage : VDS [V] 100 200 300 400 500 Total Gate charge : Qg [nC] Normalized Transient Thermal Impedance : Rth Fig.26 Normalized Transient Thermal Impedance 1 0.1 Single Pulse TC=25ºC Per unit base DMOS part : 0.25K/W SBD part : 0.32K/W 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width : Pw [s] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 10/10 2016.03 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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