bsm080d12p2c008 e

SiC Power Module
Data Sheet
BSM080D12P2C008
lApplication
lCircuit diagram
 Motor drive
1
 Inverter, Converter
 Photovoltaics, wind power generation.
10
9
8(N.C)
 Induction heating equipment.
3,4
5
6
7(N.C)
lFeatures
2
1) Low surge, low switching loss.
*Do not connnect to NC pin.
2) High-speed switching possible.
3) Reduced temperature dependence.
lConstruction
This product is a half bridge module consisting of SiC-DMOS and SiC SBD from ROHM.
lDimensions & Pin layout (Unit : mm)
10
9
8
7
6
5
4
1
2
3
(M2.6 FOR SELF-TAPPING
SCREW)
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1/10
2016.03 - Rev.A
Data Sheet
BSM080D12P2C008
lAbsolute maximum ratings (Tj = 25°C)
Parameter
Conditions
Symbol
VDSS G-S short
Drain-source voltage
Gate-source voltage(+)
VGSS
Gate-source voltage(-)
G - S voltage (tsurge<300nsec) VGSSsurge
ID
Drain current *1
IDRM
IS
Source current *1
ISRM
Total power disspation *3
Max junction temperature
Junction temperature
Storage temperature
Ptot
Tjmax
Tjop
Tstg
Isolation voltage
Visol
Limit
1200
22
D-S short
Unit
V
-6
-10 to 26
D-S short
DC(Tc=60°C)
80
2
160
Pulse (Tc=60°C) 1ms *
DC(Tc = 60°C) VGS=18V
80
2
160
Pulse (Tc=60°C) 1ms VGS=18V *
Tc=25°C
600
175
A
W
-40 to150
-40 to125
°C
2500
Vrms
Terminals to baseplate,
f=60Hz AC 1min.
4.5
N·m
Mounting to heat shink : M5 screw
3.5
(*1) Case temperature (Tc) is defined on the surface of base plate just under the chips.
(*2) Repetition rate should be kept within the range where temperature rise if die should not exceed T jmax.
Mounting torque
Main Terminals : M6 screw
-
(*3) Tj is less than 175°C
Example of acceptable VGS waveform
+26V
tsurge
+22V
0V
tsurge
-6V
+10V
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2/10
2016.03 - Rev.A
Data Sheet
BSM080D12P2C008
lElectrical characteristics (Tj=25°C)
Parameter
Symbol
On-state static
Drain-Source Voltage
Conditions
Tj=25°C
Tj=125°C
Tj=150°C
VDS(on) ID=80A, VGS=18V
IDSS
Drain cutoff current
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
VSD
VGS=18V, IS=80A
Gate-source threshold voltage
Gate-source leak current
Switching characteristics
Input capacitance
Gate Registance
Stray Inductance
Creepage distance
Clearance distance
Typ.
2.8
4.2
4.8
Max.
3.5
5.5
Unit
-
-
1.2
mA
1.6
-0.5
-
1.7
2.1
2.3
1.4
1.7
1.8
20
30
35
80
40
8
3.0
25
11.5
19.0
9.5
13.0
-
2.0
3.3
4
0.5
0.25
0.32
VDS=1200V, VGS=0V
VGS=0V, IS=80A
Source-drain voltage
Min.
-
VGS(th) VDS=10V, ID=13.2mA
VGS=22V, VDS=0V
IGSS
VGS= -6V, VDS=0V
td(on) VGS(on)=18V, VGS(off)=0V
tr
VDS=600V
trr
ID=80A
td(off) RG=0.82W
tf
inductive load
Ciss VDS=10V, VGS=0V, f=1MHz
RGint Tj=25°C
Ls
Terminal to heat sink
Terminal to terminal
Terminal to heat sink
Terminal to terminal
*4
Rth(j-c) DMOSFET (1/2 module)
SBD (1/2 module) *4
Case to heat sink, per 1 module,
Rth(c-f)
Thermal grease appied *5
Junction-to-case thermal
resistance
Case-to-heat sink
0.035
Thermal resistance
(*4) Measurement of Tc is to be done at the point just beneath the chip.
(*5) Typical value is measured by using thermally conductive grease of l=0.9W / (m · K).
lWaveform for switching test
Eon=Id×Vds
V
V
V
mA
ns
nF
W
nH
mm
mm
mm
mm
°C/W
Eoff=Id×Vds
trr
Vsurge
VDS
90%
ID
2%
90%
10%
10%
2%
2%
10%
2%
90%
VGS
10%
td(on)
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tr
3/10
td(off)
tf
2016.03 - Rev.A
Data Sheet
BSM080D12P2C008
lElectrical characteristic curves (Typical)
Fig.2 Drain-Source Voltage vs. Drain Current
Fig.1 Typical Output Characteristics
[ Tj=25ºC ]
8
160
VGS=18V
VGS=16V
Drain-Source Voltage : VDS [V]
VGS=18V
120
Drain Current : ID [A]
7
VGS=20V
VGS=14V
80
VGS=12V
40
VGS=10V
6
Tj=125ºC
5
Tj=150ºC
4
Tj=25ºC
3
2
1
0
0
0
2
4
6
0
8
40
Drain-Source Voltage : VDS [V]
120
160
Drain Current : ID [A]
Fig.4 Static Drain - Source On-State Resistance
vs. Junction Temperature
Fig.3 Drain-Source Voltage vs.
Gate-Source Voltage [ Tj=25ºC ]
8
7
6
5
4
3
ID=80A
2
ID=60A
ID=40A
ID=20A
1
0
12
14
16
18
20
22
24
Static Drain - Source On-State Resistance
: RDS(on) [W]
0.1
Tj=25ºC
Drain-Source Voltage : VDS [V]
80
Gate-Source Voltage : VGS [V]
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VGS=12V
0.08
VGS=14V
VGS=16V
0.06
VGS=18V
VGS=20V
0.04
0.02
ID=80A
0
0
50
100
150
200
250
Junction Temperature : Tj [ºC]
4/10
2016.03 - Rev.A
Data Sheet
BSM080D12P2C008
lElectrical characteristic curves (Typical)
Fig.5 Forward characteristic of Diode
Fig.6 Forward characteristic of Diode
1000
160
Tj=25ºC
Tj=125ºC
100
Tj=25ºC
Diode Forward Current : Is [A]
Diode Forward Current : Is [A]
Tj=150ºC
Tj=150ºC
Tj=125ºC
Tj=25ºC
10
VGS=0V
VGS=18V
1
Tj=125ºC
120
Tj=150ºC
Tj=25ºC
80
Tj=125ºC
Tj=150ºC
40
VGS=0V
VGS=18V
0
0
1
2
3
4
0
Source-Drain Voltage : VSD [V]
2
3
4
Source-Drain Voltage : VSD [V]
Fig.7 Drain Current vs. Gate-Source Voltage
Fig.8 Drain Current vs. Gate-Source Voltage
160
1.0E+03
VDS=20V
VDS=20V
1.0E+02
120
Tj=150ºC
Drain Current : ID [A]
Drain Current : ID [A]
1
Tj=125ºC
80
Tj=25ºC
40
Tj=150ºC
1.0E+01
1.0E+00
Tj=125ºC
1.0E-01
Tj=25ºC
1.0E-02
1.0E-03
0
1.0E-04
0
5
10
15
0
Gate-Source Voltage : VGS [V]
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© 2016 ROHM Co., Ltd. All rights reserved.
5
10
15
Gate-Source Voltage : VGS [V]
5/10
2016.03 - Rev.A
Data Sheet
BSM080D12P2C008
lElectrical characteristic curves (Typical)
Fig.10 Switching Characteristics [ Tj=125ºC ]
Fig.9 Switching Characteristics [ Tj=25ºC ]
1000
Switching Time : t [ns]
Switching Time : t [ns]
1000
100
td(off)
tr
tf
td(on)
10
VDS=600V
VGS(on)=18V
VGS(off)= 0V
RG=0.82W
INDUCTIVE LOAD
1
100
td(off)
tr
tf
td(on)
10
VDS=600V
VGS(on)=18V
VGS(off)= 0V
RG=0.82W
INDUCTIVE LOAD
1
0
50
100
150
200
0
Drain Current : ID [A]
100
150
200
Drain Current : ID [A]
Fig.11 Switching Characteristics [ Tj=150ºC ]
Fig.12 Switching Loss vs. Drain Current
[ Tj=25ºC ]
3
100
Switching Loss [mJ]
1000
Switching Time : t [ns]
50
td(off)
tr
tf
td(on)
10
VDS=600V
VGS(on)=18V
VGS(off)= 0V
RG=0.82W
INDUCTIVE LOAD
1
0
50
100
150
2
Eon
1
Eoff
Err
0
0
200
Drain Current : ID [A]
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VDS=600V
VGS(on)=18V
VGS(off)= 0V
RG=0.82W
INDUCTIVE
LOAD
50
100
150
200
Drain Current : ID [A]
6/10
2016.03 - Rev.A
Data Sheet
BSM080D12P2C008
lElectrical characteristic curves (Typical)
Fig.13 Switching Loss vs. Drain Current
[ Tj=125ºC ]
Fig.14 Switching Loss vs. Drain Current
[ Tj=150ºC ]
3
2
Eon
1
Eoff
2
50
100
150
Eoff
Err
0
0
200
Drain Current : ID [A]
10
VDS=600V
VGS(on)=18V
VGS(off)= 0V
RG=0.82W
INDUCTIVE
LOAD
1
Irr
trr
10
10
VDS=600V
VGS(on)=18V
VGS(off)= 0V
RG=0.82W
INDUCTIVE
LOAD
1
1
200
1
0
Drain Current : ID [A]
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200
100
Reverse Recovery Time : trr [ns]
10
Reverse Recovery Current : Irr [A]
Reverse Recovery Time : trr [ns]
trr
150
150
100
100
Irr
100
100
Fig.16 Recovery Characteristics vs.
Drain Current [ Tj=125ºC ]
100
50
50
Drain Current : ID [A]
Fig.15 Recovery Characteristics vs.
Drain Current [ Tj=25ºC ]
0
Eon
1
Err
0
0
VDS=600V
VGS(on)=18V
VGS(off)= 0V
RG=0.82W
INDUCTIVE
LOAD
Reverse Recovery Current : Irr [A]
VDS=600V
VGS(on)=18V
VGS(off)= 0V
RG=0.82W
INDUCTIVE
LOAD
Switching Loss [mJ]
Switching Loss [mJ]
3
50
100
150
200
Drain Current : ID [A]
7/10
2016.03 - Rev.A
Data Sheet
BSM080D12P2C008
lElectrical characteristic curves (Typical)
Fig.18 Switching Characteristics vs. Gate
Resistance [ Tj=25ºC ]
Fig.17 Recovery Characteristics vs.
Drain Current [ Tj=150ºC ]
Irr
trr
10
10
VDS=600V
VGS(on)=18V
VGS(off)= 0V
RG=0.82W
INDUCTIVE
LOAD
1
1000
Switching Time : t [ns]
100
Reverse Recovery Current : Irr [A]
Reverse Recovery Time : trr [ns]
100
1
0
50
100
150
tf
tr
td(on)
100
10
200
0.1
Drain Current : ID [A]
1
10
100
Gate Resistance : RG [W]
Fig.19 Switching Characteristics vs. Gate
Resistance [ Tj=125ºC ]
Fig.20 Switching Characteristics vs. Gate
Resistance [ Tj=150ºC ]
1000
1000
VDS=600V
ID=80A
VGS(on)=18V
VGS(off)= 0V
INDUCTIVE
LOAD
VDS=600V
ID=80A
VGS(on)=18V
VGS(off)= 0V
INDUCTIVE
LOAD
td(off)
tf
tr
100
td(on)
Switching Time : t [ns]
Switching Time : t [ns]
td(off)
VDS=600V
ID=80A
VGS(on)=18V
VGS(off)= 0V
INDUCTIVE
LOAD
10
td(off)
tf
tr
100
td(on)
10
0.1
1
10
100
0.1
Gate Resistance : RG [W]
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1
10
100
Gate Resistance : RG [W]
8/10
2016.03 - Rev.A
Data Sheet
BSM080D12P2C008
lElectrical characteristic curves (Typical)
Fig.21 Switching Loss vs. Gate Resistance
[ Tj=25ºC ]
Fig.22 Switching Loss vs. Gate Resistance
[ Tj=125ºC ]
10
10
6
VDS=600V
ID=80A
VGS(on)=18V
VGS(off)= 0V
INDUCTIVE
LOAD
8
Eon
Switching Loss [mJ]
Switching Loss [mJ]
8
VDS=600V
ID=80A
VGS(on)=18V
VGS(off)= 0V
INDUCTIVE
LOAD
Eoff
4
2
6
Eon
Eoff
4
2
Err
Err
0
0
0.1
1
10
0.1
100
Gate Resistance : RG [W]
1
10
100
Gate Resistance : RG [W]
Fig.23 Switching Loss vs. Gate Resistance
[ Tj=150ºC ]
10
VDS=600V
ID=80A
VGS(on)=18V
VGS(off)= 0V
INDUCTIVE
LOAD
Switching Loss [mJ]
8
6
Eon
Eoff
4
2
Err
0
0.1
1
10
100
Gate Resistance : RG [W]
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9/10
2016.03 - Rev.A
Data Sheet
BSM080D12P2C008
lElectrical characteristic curves (Typical)
Fig.24 Typical Capacitance vs. Drain-Source
Voltage
Fig.25 Gate Charge Characteristics
[ Tj=25ºC ]
25
Ciss
1.E-08
Capasitance : C [nF]
Gate-Source Voltage : VGS [V]
1.E-07
Coss
1.E-09
1.E-10
Crss
Tj=25ºC
VGS=0V
200kHz
1.E-11
0.01
20
15
10
5
ID=80A
Tj=25ºC
VDS=600V
0
0.1
1
10
100
0
1000
Drain-Source Voltage : VDS [V]
100
200
300
400
500
Total Gate charge : Qg [nC]
Normalized Transient Thermal Impedance : Rth
Fig.26 Normalized Transient Thermal
Impedance
1
0.1
Single Pulse
TC=25ºC
Per unit base
DMOS part : 0.25K/W
SBD part : 0.32K/W
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width : Pw [s]
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10/10
2016.03 - Rev.A
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
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More detail product informations and catalogs are available, please contact us.
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R1102B
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