SCT2H12NZ Data Sheet N-channel SiC power MOSFET lOutline VDSS 1700V RDS(on) (Typ.) 1.15W ID 3.7A PD 35W TO-3PFM (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Long creepage distance *1 Body Diode 4) Simple to drive 5) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging lApplication • Auxilialy power supplies Tube Reel size (mm) - Tape width (mm) - Type Basic ordering unit (pcs) • Switch mode power supplies Taping code 30 - Marking SCT2H12NZ lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit VDSS 1700 V Tc = 25°C ID *1 3.7 A Tc = 100°C ID *1 2.6 A ID,pulse *2 9.2 A VGSS -6 to 22 V VGSS-surge*3 -10 to 26 V Power dissipation (Tc = 25°C) PD 35 W Junction temperature Tj 175 °C Tstg -55 to +175 °C Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage (DC) Gate - Source surge voltage (Tsurge ˂ 300nsec) Range of storage temperature www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/13 2015.12 - Rev.A Data Sheet SCT2H12NZ lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - case RthJC - 3.32 4.32 °C/W Thermal resistance, junction - ambient RthJA - 36.8 50 °C/W Soldering temperature, wavesoldering for 10s Tsold - - 265 °C lElectrical characteristics (Ta = 25°C) Values Parameter Drain - Source breakdown voltage Symbol V(BR)DSS Conditions Unit Min. Typ. Max. 1700 - - V Tj = 25°C - 0.1 10 A Tj = 150°C - 0.2 - VGS = 0V, ID = 1mA VDS = 1700V, VGS = 0V Zero gate voltage drain current IDSS Gate - Source leakage current IGSS+ VGS = +22V, VDS = 0V - - 100 nA Gate - Source leakage current IGSS- VGS = -6V, VDS = 0V - - -100 nA 1.6 2.8 4.0 V Gate threshold voltage VGS (th) VDS = VGS, ID = 0.9mA *1 Limited only by maximum temperature allowed. *2 PW 10s, Duty cycle 1% *3 Example of acceptable Vgs waveform *4 Pulsed www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 2/13 2015.12 - Rev.A Data Sheet SCT2H12NZ lElectrical characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. - 1.15 1.5 Tj = 125°C - 1.71 - RG f = 1MHz, open drain - 64 - W Transconductance gfs *4 VDS = 10V, ID = 1.1A - 0.4 - S Input capacitance Ciss VGS = 0V - 184 - Output capacitance Coss VDS = 800V - 16 - Reverse transfer capacitance Crss f = 1MHz - 6 - Effective output capacitance, energy related Co(er) VGS = 0V VDS = 0V to 800V - 17 - Turn - on delay time td(on) *4 VDD = 500V, ID = 1.1A - 16 - VGS = 18V/0V - 21 - RL = 455W - 35 - RG = 0W - 74 - - 57 - VGS = 18V, ID = 1.1A Static drain - source on - state resistance Gate input resistance RDS(on) *4 Tj = 25°C tr *4 Rise time Turn - off delay time td(off) *4 tf *4 Fall time Turn - on switching loss Turn - off switching loss Eon *4 Eoff *4 W pF pF ns VDD = 800V, ID=1.1A VGS = 18V/0V RG = 0W, L=2mH *Eon includes diode reverse recovery J - 32 - lGate Charge characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Total gate charge Qg *4 VDD = 500V - 14 - Gate - Source charge Qgs *4 ID =1A - 4 - Gate - Drain charge Qgd VGS = 18V - 5 - VDD = 500V, ID = 1A - 10.5 - Gate plateau voltage www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. *4 V(plateau) 3/13 nC V 2015.12 - Rev.A Data Sheet SCT2H12NZ lBody diode electrical characteristics (Source-Drain) (Ta = 25°C) Values Parameter Symbol Inverse diode continuous, forward current Conditions Unit IS *1 Min. Typ. Max. - - 4 A - - 10 A - 4.3 - V - 21 - ns - 13 - nC - 1.1 - A Tc = 25°C Inverse diode direct current, pulsed ISM *2 Forward voltage VSD *4 Reverse recovery time trr VGS = 0V, IS = 1.1A *4 Reverse recovery charge Qrr *4 Peak reverse recovery current Irrm *4 IF = 1.1A, VR = 800V di/dt = 300A/s lTypical Transient Thermal Characteristics Symbol Value Rth1 816m Rth2 1939m Rth3 567m www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. Unit K/W 4/13 Symbol Value Cth1 127µ Cth2 1.64m Cth3 64.5m Unit Ws/K 2015.12 - Rev.A Data Sheet SCT2H12NZ lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 100 40 Operation in this area is limited by RDS(on) 30 Drain Current : ID [A] Power Dissipation : PD [W] 35 25 20 15 10 PW = 100s PW = 1ms 10 PW = 10ms 1 PW = 100ms 0.1 Ta = 25ºC Single Pulse 5 0 0.01 0 50 100 150 200 0.1 1 10 100 1000 10000 Drain - Source Voltage : VDS [V] Junction Temperature : Tj [°C] Transient Thermal Resistance : Rth [K/W] Fig.3 Typical Transient Thermal Resistance vs. Pulse Width 10 1 Ta = 25ºC Single Pulse 0.1 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 Pulse Width : PW [s] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 5/13 2015.12 - Rev.A Data Sheet SCT2H12NZ lElectrical characteristic curves Fig.4 Typical Output Characteristics(I) 1.8 3.5 1.6 VGS= 14V 2.5 Ta = 25ºC Pulsed 2 VGS= 12V 1.5 1 Drain Current : ID [A] VGS= 18V 3 VGS= 20V VGS= 16V VGS= 20V Drain Current : ID [A] Fig.5 Typical Output Characteristics(II) 1.4 1.2 VGS= 12V 1 Ta = 25ºC Pulsed 0.8 0.6 VGS= 10V 0.4 VGS= 10V 0.5 0.2 VGS= 8V 0 0 2 4 6 8 VGS= 8V 0 10 0 Drain - Source Voltage : VDS [V] 1 2 3 4 5 Drain - Source Voltage : VDS [V] Fig.6 Tj = 150°C Typical Output Characteristics(I) Fig.7 Tj = 150°C Typical Output Characteristics(II) 1.8 3.5 VGS= 20V VGS= 18V 1.6 3 1.4 VGS= 20V 2.5 Drain Current : ID [A] Drain Current : ID [A] VGS= 14V VGS= 18V VGS= 16V VGS= 18V VGS= 12V VGS= 16V 2 VGS= 14V VGS = 10V 1.5 1 0.5 VGS= 16V VGS= 14V VGS= 12V 1.2 1 VGS= 10V 0.8 VGS= 8V 0.6 VGS= 8V 0.4 Ta = 150ºC Pulsed 0.2 Ta = 150ºC Pulsed 0 0 0 2 4 6 8 0 10 Drain - Source Voltage : VDS [V] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1 2 3 4 5 Drain - Source Voltage : VDS [V] 6/13 2015.12 - Rev.A Data Sheet SCT2H12NZ lElectrical characteristic curves Fig.8 Typical Transfer Characteristics (I) Fig.9 Typical Transfer Characteristics (II) 3 10 VDS = 10V Pulsed 2.5 Drain Current : ID [A] Drain Current : ID [A] VDS = 10V Pulsed 1 Ta= 175ºC Ta= 125ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 0.1 2 1.5 Ta= 175ºC Ta= 125ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 1 0.5 0 0.01 0 2 4 6 8 0 10 12 14 16 18 20 2 6 8 10 12 14 16 18 20 Gate - Source Voltage : VGS [V] Gate - Source Voltage : VGS [V] Fig.10 Gate Threshold Voltage vs. Junction Temperature Fig.11 Transconductance vs. Drain Current 5 1 VDS = 10V Pulsed VDS = 10V ID = 0.41mA 4.5 4 Transconductance : gfs [S] Gate Threshold Voltage : VGS(th) [V] 4 3.5 3 2.5 2 1.5 1 0.1 Ta= 175ºC Ta= 125ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 0.5 0 -50 0 50 100 150 0.01 0.01 200 Junction Temperature : Tj [°C] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 0.1 1 10 Drain Current : ID [A] 7/13 2015.12 - Rev.A Data Sheet SCT2H12NZ lElectrical characteristic curves 3 Ta = 25ºC Pulsed 2.5 2 ID = 2.2A 1.5 ID = 1.1A 1 0.5 0 8 10 12 14 16 18 20 Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature Static Drain - Source On-State Resistance : RDS(on) [W] Static Drain - Source On-State Resistance : RDS(on) [W] Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage 22 Gate - Source Voltage : VGS [V] 3 2.5 VGS = 18V Pulsed 2 1.5 ID = 2.2A 1 ID = 1.1A 0.5 0 -50 0 50 100 150 200 Junction Temperature : Tj [ºC] Static Drain - Source On-State Resistance : RDS(on) [W] Fig.14 Static Drain - Source On - State Resistance vs. Drain Current 10 VGS = 18V Pulsed 1 Ta = 175ºC Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.1 0.1 1 10 Drain Current : ID [A] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 8/13 2015.12 - Rev.A Data Sheet SCT2H12NZ lElectrical characteristic curves Fig.15 Typical Capacitance vs. Drain - Source Voltage Fig.16 Coss Stored Energy 7 Coss Stored Energy : EOSS [J] 1000 Capacitance : C [pF] Ciss 100 Coss 10 Crss Ta = 25ºC f = 1MHz VGS = 0V Ta = 25ºC 6 5 4 3 2 1 0 1 0.1 1 10 100 0 1000 Drain - Source Voltage : VDS [V] 400 600 800 1000 Drain - Source Voltage : VDS [V] Fig.18 Dynamic Input Characteristics Fig.17 Switching Characteristics 1000 20 Ta = 25ºC VDD = 500V VGS = 18V RG = 0W Pulsed tf 100 Gate - Source Voltage : VGS [V] Switching Time : t [ns] 200 td(off) tr td(on) 10 Ta = 25ºC VDD = 500V ID = 1A Pulsed 18 16 14 12 10 8 6 4 2 0 0.1 1 10 0 4 6 8 10 12 14 16 Total Gate Charge : Qg [nC] Drain Current : ID [A] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 2 9/13 2015.12 - Rev.A Data Sheet SCT2H12NZ lElectrical characteristic curves Fig.19 Typical Switching Loss vs. Drain - Source Voltage Fig.20 Typical Switching Loss vs. Drain Current 100 Ta = 25ºC ID=1.1A VGS = 18V/0V RG=0W L=2mH Switching Energy : E [J] 90 80 70 Switching Energy : E [J] 250 Eon 60 50 40 Eoff 30 20 Ta = 25ºC VDD=800V VGS = 18V/0V RG=0W L=2mH 200 Eon 150 100 Eoff 50 10 0 0 500 600 700 800 900 1000 0 1100 Drain - Source Voltage : VDS [V] 1 2 3 4 5 Drain Current : ID [A] Fig.21 Typical Switching Loss vs. External Gate Resistance 140 Ta = 25ºC VDD=800V ID=1.1A VGS = 18V/0V L=2mH Switching Energy : E [J] 120 100 Eon 80 60 Eoff 40 20 0 0 20 40 60 80 100 External Gate Resistance : RG [W] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 10/13 2015.12 - Rev.A Data Sheet SCT2H12NZ lElectrical characteristic curves Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current 10 1000 VGS = 0V Pulsed 1 Ta = 175ºC Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.1 Reverse Recovery Time : trr [ns] Inverse Diode Forward Current : IS [A] Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage 0.01 Ta = 25ºC di / dt = 300A / us VR = 800V VGS = 0V Pulsed 100 10 0 1 2 3 4 5 6 7 8 1 Source - Drain Voltage : VSD [V] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 10 Inverse Diode Forward Current : IS [A] 11/13 2015.12 - Rev.A Data Sheet SCT2H12NZ lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms Eon = ID×VDS Same type device as D.U.T. VDS Irr Eoff = ID×VDS Vsurge D.U.T. ID ID Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform D.U.T. www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 12/13 2015.12 - Rev.A Data Sheet SCT2H12NZ lDimensions (Unit : mm) TO-3PFM www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 13/13 2015.12 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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