bm1r00xxxf e

Datasheet
Low Consumption and High Accuracy Shunt Regulator Built-in
High Efficiency and Low Standby Power,
CCM corresponding
Secondary Side Synchronous Rectification
Controller IC
BM1R00xxxF
Key Specifications
General Description





BM1R00xxxF is a synchronous rectification controller
to be used in the secondary-side output. It has a
built-in ultra-low consumption and high accuracy shunt
regulator, which significantly reduces standby power.
The shunt regulator is constructed in a completely
independent chip that enables it to operate as a GND
reference even when used in high side.
Input Voltage Range: 2.7V to 32V
Circuit Current (No Switching):
800µA(Typ)
Circuit Current (Auto Shutdown) :
120µA (Typ)
DRAIN Terminal Absolute Voltage:
120V
Operating Temperature Range: -40°C to +105°C
Package
W(Typ) x D(Typ) x H(Max)
5.00mm x 6.20mm x 1.71mm
At continuous mode operation, further space saving
can be realized when operating without the input
switching synchronizing signal of the primary side.
BM1R00xxxF also features a wide operating power
supply voltage range of 2.7V to 32V for various output
applications.
Finally, by adopting the high-voltage 120V process, it
is possible to monitor the drain voltage directly.
SOP8
Features










Built-in Ultra-Low Consumption Shunt Regulator
Reducing Standby Power Consumption
Synchronous Rectification FET Supports
High and Low Side
120V High Voltage Process DRAIN terminal
Wide Input Operating Voltage Range of
2.7V to 32V
Supports LLC and PWM QR Controller
No Input Required on the Primary-Side at CCM
Built-in Overvoltage Protection for SH_IN and
SH_OUT Terminal
Built-in Thermal Shutdown Function
Built-in Auto Shutdown Function
SOP8 package
Lineup Table
Latch Protection Series
Function Name
BM1R00001
BM1R00002
BM1R00003
BM1R00004
BM1R00005
BM1R00006
BM1R00007
BM1R00008
BM1R00009
BM1R00010
BM1R00011
BM1R00012
BM1R00013
BM1R00014
BM1R00015
BM1R00016
BM1R00017
BM1R00018
BM1R00019
BM1R00020
BM1R00021
BM1R00022
BM1R00023
BM1R00024
BM1R00025
BM1R00026
BM1R00027
BM1R00028
BM1R00029
BM1R00030
Applications
 AC-DC Output Power Conversion Applications:
Charger, Adapter, TV, Rice Cooker, Humidifier,
Air Conditioning, Vacuum Cleaner, etc.
〇Product structure : Silicon monolithic integrated circuit
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Compulsion
ON Time
( μs)
1
1
1
1
1
1.5
1.5
1.5
1.5
1.5
2.3
2.3
2.3
2.3
2.3
2.8
2.8
2.8
2.8
2.8
3.5
3.5
3.5
3.5
3.5
NONE
NONE
NONE
NONE
NONE
Compulsion
OFF Time
( μs)
1.3
2
3
3.6
4.6
1.3
2
3
3.6
4.6
1.3
2
3
3.6
4.6
1.3
2
3
3.6
4.6
1.3
2
3
3.6
4.6
1.3
2
3
3.6
4.6
Auto Restart Protection Series
Function Name
BM1R00121
BM1R00122
BM1R00123
BM1R00124
BM1R00125
BM1R00126
BM1R00127
BM1R00128
BM1R00129
BM1R00130
BM1R00131
BM1R00132
BM1R00133
BM1R00134
BM1R00135
BM1R00136
BM1R00137
BM1R00138
BM1R00139
BM1R00140
BM1R00141
BM1R00142
BM1R00143
BM1R00144
BM1R00145
BM1R00146
BM1R00147
BM1R00148
BM1R00149
BM1R00150
Compulsion
ON Time
( μs)
1
1
1
1
1
1.5
1.5
1.5
1.5
1.5
2.3
2.3
2.3
2.3
2.3
2.8
2.8
2.8
2.8
2.8
3.5
3.5
3.5
3.5
3.5
NONE
NONE
NONE
NONE
NONE
Compulsion
OFF Time
( μs)
1.3
2
3
3.6
4.6
1.3
2
3
3.6
4.6
1.3
2
3
3.6
4.6
1.3
2
3
3.6
4.6
1.3
2
3
3.6
4.6
1.3
2
3
3.6
4.6
〇This product has no designed protection against radioactive rays
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Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001
BM1R00xxxF
Typical Application Circuits
VOUT
VOUT
VCC
DRAIN
8
2
SH_IN
SR_GND
7
3
SH_OUT
GATE
6
4
SH_GND MAX_TON
5
5
4
SH_GND MAX_TON
6
3
GATE
SH_OUT
Primary
Controler
+
-
1
SR_GND
7
2
SH_IN
DRAIN
8
1
Primary
Controler
VCC
+
-
GND
GND
High Side Application (FLYBACK)
Low Side Application (FLYBACK)
Pin Configuration
(TOP VIEW)
8
DRAIN
7
SR_GND
6
GATE
5
4
SH_GND
3
SH_OUT
2
SH_IN
1
VCC
MAX_TON
Pin Description
Pin No.
Pin Name
Function
Power supply
1
VCC
2
SH_IN
3
SH_OUT
Shunt regulator output
4
SH_GND
Shunt regulator ground
5
MAX_TON
Set maximum on time
6
GATE
7
SR_GND
8
DRAIN
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TSZ22111 • 15 • 001
Shunt regulator reference
Gate drive
Synchronous rectification ground
DRAIN monitor
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TSZ02201-0F4F0A2BM1R0-1-2
20. Apr. 2016 Rev.002
BM1R00xxxF
Block Diagram
VOUT
+
-
GND
Primary
Side
Controller
SH_GND
SH_OUT
SH_IN
GATE
DRAIN
VCC
LDO BLOCK
SHUNT_REGULATOR
2kohm
+
DRAIN_COMP
0.8V
Driver
+
VCCx1.4
SET_COMP
S
+
-100mV
PROTECTION BLOCK
・SH_OUT_OVP
・SH_IN_OVP
・TSD
Timer
LATCH
Q
R
MAX_TON
BLOCK
MAX_TON
BM1R00001-030: Include Timer LATCH
BM1R00121-150: Without Timer LATCH
SR_GND
Compulsion
ON TIME
RESET_COMP
+
-
Compulsion
OFF TIME
AUTO
SHUTDOWN
BLOCK
-6mV
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BM1R00xxxF
Description of Block
1.
SET_COMP Block
Monitors the DRAIN terminal voltage, and outputs a signal to turn ON the FET if the DRAIN terminal voltage is less
than or equal to -100mV (Typ).
2.
RESET_COMP Block
Monitors the DRAIN terminal voltage and outputs a signal to turn OFF the FET if the DRAIN terminal voltage is more
than or equal to -6mV (Typ).
3.
Compulsion ON TIME Block
When the FET is turned ON due to SET_COMP detection, noise occurs on the DRAIN terminal. To prevent the noise
from turning OFF the FET, an ON state should be forced for a certain time. Compulsion ON time is within a range of
0µs (None) to 3.5µs, which is different for each series number (refer to page.1 table).
4.
Compulsion OFF TIME Block
When the FET is turned OFF due to RESET_COMP detection, resonance waveforms appear on the DRAIN terminal.
To prevent the noise from turning ON the FET, an OFF state should be forced for a certain time. Compulsion OFF time
is within a range of 1.3µs to 4.6µs, which is different for each series number (refer to page.1 table).
Operation sequence of each block is shown on the figure below.
二次側
DRAIN
VOUT
0V
-6mV
-6mV
-6mV
-100mV
SET COMP
0V
ON
RESET
VGATE
0V
Compulsion 0V
OFF Time
-100mV
ON
RESET COMP
0V
Compulsion
0V
ON Time
-6mV
-100mV
-100mV
RESET
ON
ON
ON
TIME
ON
TIME
OFF
TIME
OFF
TIME
Figure 1. Operation sequence
About Maximum Input Frequency
The Maximum Operating Frequency of the IC depends on the Compulsion ON/OFF Time. For example, BM1R00026F and
BM1R00146F Compulsion ON and OFF Time is both equal to 0μs. Considering a variation of 9%, the maximum input
frequency is given by the following:
fMAX = 1 / ((0μs + 1.3μs) x 1.09) = 706kHz
However, since the frequency varies greatly due to the input voltage and load, it will be necessary to select the series in
accordance with each application.
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BM1R00xxxF
Description of Block – continued
5.
MAX_TON Block
MAX_TON block sets the maximum ON time. DRAIN terminal voltage starts counting when the rising edge of the
output voltage exceeds VCC × 1.4V (Typ). In addition, the recounting starts when it detects another rising edge. The
synchronous rectification FET will be forced OFF after the set time has elapsed. The time can be adjusted by varying
the resistance value of the resistor connected to the MAX_TON terminal.
The relationship between the resistance value (RMAX_TON) and set time (TMAX_TON) is described as follows:
RMAX _ TON k  t MAX _ TON µs   10k / s 
Calculation Example:
If you want to set the maximum ON time to 10µs, the value of RMAX_TON is as follows:
10µs  10k / s   100k
However, the formula above is for an ideal approximation only; it is still strongly advised that the operation of the actual
application should still be verified.
By setting this time, it becomes possible to prevent the simultaneous ON operation of the primary side and the
secondary side in continuous mode.
The drive sequence in continuous mode operation is shown in the figure below:
VOUT
I2
I1
Primary
Side
Controller
(3)
(1)
Np Ns
VH
Vf
+
-
(1)
VG1
GND
LFB
VG1
VG2
RDRAIN2
I1
RDRAIN1
D1
GATE
DRAIN
VCC
VDS2
I2
LDO BLOCK
VCC x 1.4
DRAIN_COMP
-
R1
Driver
+
VCCx1.4
SET_COMP
S
+
C1
VDS2
-100mV
0V
Q
-Vf
MAX_TON
BLOCK
MAX_TON
RMAX_TON
-100mV
-100mV
R
(4)
VG2
(6)
SR_GND
Compulsion
OFF TIME
(2)
(5)
tMAX_ON
Period allotted for G1 and G2
to avoid concurrent ON state
at continuous mode
operation.
Compulsion OFF
-6mV
tMAX_ON
Timer Start
MAX_TON
TIMER
Compulsion OFF
+
Timer Start
Compulsion
ON TIME
RESET_COMP
Figure 2. The drive sequence in continuous mode operation
(1)
(2)
(3)
(4)
(5)
(6)
Primary side FET = ON. Current I1 flows to the primary side FET. Secondary side drain voltage VDS2 rises.
The VDS2 = VCC × 1.4 detects the rise edge of the threshold, MAX_TON timer start.
Primary side FET = OFF. Current I2 flows through the Body Diode of the secondary side FET (OFF state).
Secondary side drain voltage VDS2<-100mV by I2 Current, Secondary side FET=ON.
Elapsed the set time in MAX_TON terminals, the secondary-side FET = compulsory OFF.
Since the I2 current flows through the Body Diode, Vf voltage occurs.
a capacitor C1 and a Moreover, in order to reduce as much as possible the influence of the switching noise, resistor R1
in series should be connected to the MAX_TON terminal. The capacitance should approximately be 1000pF, and the
resistance value is recommended to be around 1kΩ.This also serves as phase compensation of MAX_TON terminal
and therefore should be connected.
This function may be disabled by pulling up the MAX_TON terminal to VCC pin in quasi-resonant and current
resonance applications which do not operate on continuous mode. The 1000pF and 1kΩ resistor is also unnecessary.
6.
AUTO SHUTDOWN Block
The Auto Shutdown block automatically turns the synchronous rectification ON/OFF depending on the presence or
absence of the DRAIN terminal pulse. Shutdown occurs if the input pulses on the DRAIN terminal has more than 200us
between pulses. This stops the synchronous rectification operation. The IC will restart the synchronous rectification
after it detects 256 occurrences of input pulses on the DRAIN terminal.
7.
SHUNT REGULATOR Chip
A high-accuracy shunt regulator with ultra-low consumption is used for controlling the output voltage of the AC/DC.
Since the synchronous rectification and the shunt regulator are built in a completely different chip, GND separation is
possible. Therefore, it becomes possible to place the shunt regulator on the secondary-side GND reference in the
synchronous rectification applications in case of disposing the High Side FET. It can also be used as protection for the
comparator, the secondary side OVP, FET overheat protection, etc.
8.
PROTECTION Block
When an abnormal condition is detected after the timer count is completed, the photo coupler from SH_OUT terminal is
driven to stop the switching operation on the primary side.
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BM1R00xxxF
Absolute Maximum Ratings (Ta = 25°C)
Parameter
VCC Input Voltage
MAX_TON Input Voltage
Symbol
Rating
VMAX_VCC
-0.3 to +40
VMAX_MAX_TON
-0.3 to +40
VMAX_SH_IN
SH_IN Input Voltage
(Note 1)
V
(Note 1)
V
(Note 2)
V
(Note 2)
V
(Note 1)
V
-0.3 to +40
VMAX_SH_OUT
-0.3 to +40
Gate Input Voltage
VMAX_GATE
-0.3 to 15.5
Drain Input Voltage
VMAX_DRAIN
SH_OUT Input Voltage
Maximum Junction Temperature
Operating Temperature Range
Storage Temperature
Unit
120
(Note 1)(Note 3)
Tjmax
+150
V
°C
Topr
-40 to +105
°C
Tstr
-55 to +150
°C
(Note 1) Reference SR_GND
(Note 2) Reference SH_GND
(Note 3) When a negative voltage is applied, current flows through the ESD protection device.
This current value is about 6mA or less and will require a current limiting resistor to the DRAIN terminal
Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse in case the IC is operated over
the absolute maximum ratings.
Thermal Resistance (Note 1)
Parameter
Symbol
Thermal Resistance (Typ)
1s
(Note 3)
2s2p
(Note 4)
Unit
SOP8
Junction to Ambient
Junction to Top Characterization Parameter
(Note 2)
θJA
197.4
109.8
°C/W
ΨJT
21
19
°C/W
(Note 1) Based on JESD51-2A(Still-Air)
(Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside
surface of the component package.
(Note 3) Using a PCB board based on JESD51-3.
(Note 4) Using a PCB board based on JESD51-7.
Layer Number of
Measurement Board
Single
Material
Board Size
FR-4
114.3mm x 76.2mm x 1.57mmt
Top
Copper Pattern
Thickness
Footprints and Traces
70µm
Layer Number of
Measurement Board
4 Layers
Material
Board Size
FR-4
114.3mm x 76.2mm x 1.6mmt
Top
2 Internal Layers
Bottom
Copper Pattern
Thickness
Copper Pattern
Thickness
Copper Pattern
Thickness
Footprints and Traces
70µm
74.2mm x 74.2mm
35µm
74.2mm x 74.2mm
70µm
Recommended Operating Conditions (Ta = 25°C)
Parameter
Supply Voltage
MAX_TON Resistor Range
Symbol
Min
Typ
Max
Unit
VCC
2.7
20
32
V
RMAX_TON
56
-
300
kΩ
MAX_TON R1
R1
0.5
1
2
kΩ
MAX_TON C1
C1
680
1000
2200
pF
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BM1R00xxxF
Electrical Characteristics (Unless otherwise specified VCC=20V Ta=25°C)
MIN
Spec
TYP
MAX
ION1
0.5
1
2
mA
ISLEEP
IACT
IOFF
60
350
18
120
800
35
200
1400
60
μA
μA
μA
fSW=50KHz at Switching Mode
(GATE=OPEN)
At Shutdown Mode
Switching STOP Mode,
VCC=1.9V
VUVLO1
VUVLO2
2.00
1.95
2.30
2.25
2.65
2.60
V
V
VCC Sweep Up
VCC Sweep Down
VGONN
VGOFF
-150
-10
-100
-6
-50
-1
mV
mV
tCON
-9
-
9
%
tCOFF
-9
-
9
%
VMAX_ON_START
24
28
32
V
MAX_TON Timer
tMAX_ON
9.4
10
10.6
μs
MAX_TON Output Voltage
Auto Shutdown BLOCK
Auto Shutdown Detect Time
Auto Shutdown Cancel Pulse Number
Drain Monitor BLOCK
Drain Sink Current
Drain Terminal Source Current1
Drain Terminal Source Current2
Driver BLOCK
GATE Terminal High Voltage
High Side FET ON-Resistance
(VCC=2.7V)
High Side FET ON-Resistance
(VCC=5V)
High Side FET ON-Resistance
(VCC=10V)
Low Side FET ON-Resistance
(VCC=2.7V)
Low Side FET ON-Resistance
(VCC=5V)
Propagation Delay to FET Turn ON
Propagation Delay to FET Turn OFF
VMAX_ON
0.24
0.40
0.56
V
tSHD
PACT
120
-
200
265
320
-
μs
time
ID_SINK
IDRAIN_SO1
IDRAIN_SO2
130
-23
-3
250
-11
-1
550
-5
-0.3
μA
μA
μA
VDRAIN=120V
VDRAIN=0.1V
VDRAIN=-0.2V
VGATE_H1
11
12
14
V
VCC=20V
RHIONR1
12.0
23.0
50.0
Ω
VCC=2.7V, IOUT= -10mA
RHIONR2
6.0
12.0
24.0
Ω
VCC=5.0V, IOUT= -10mA
RHIONR3
4.0
9.0
18.0
Ω
VCC=10V, IOUT= -10mA
RLOWONR1
1.1
2.2
4.4
Ω
VCC=2.7V, IOUT= +10mA
RLOWONR2
0.9
1.8
3.6
Ω
VCC=5.0V, IOUT= +10mA
tDELAY_ON
tDELAY_OFF
-
50
100
-
ns
ns
VDRAIN=-300mV to +300mV
VDRAIN =-300mV to +300mV
Parameter
Symbol
Unit
Conditions
Circuit Current
Circuit Current1
Circuit Current at Sleep Mode
Circuit Current at Normal Mode
Circuit Current at UVLO Mode
VCC Item
VCC UVLO Threshold Voltage1
VCC UVLO Threshold Voltage2
SR Controller BLOCK
GATE Turn ON Threshold
GATE Turn OFF Threshold
Compulsion ON Time
(Note 5)
(Note 5)
Compulsion OFF Time
MAX_TON BLOCK
MAX_TON Timer Start Threshold
Voltage
VDRAIN=-300mV to +300mV
VDRAIN=-300mV to +300mV
Excluding BM1R00026-30 and
BM1R00146-150 which has no
Compulsion ON Time
VCC=20V, DRAIN Terminal
Voltage
RMAX_TON=100kΩ, VCC=3V,
VDRAIN=-0.3↔7V
No Pulse to DRAIN Terminal
Input Pulse to DRAN Terminal
(Note 5) See the lineup table in page1.
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BM1R00xxxF
Electrical Characteristics (Unless otherwise specified VSH_OUT=20V Ta=25°C)
MIN
Spec
TYP
MAX
VSHREF
0.796
0.800
0.804
V
Reference Voltage
Changing Ratio by Temperature
∆VSHEMP
-
-4
-
mV
SH_OUT Coefficient
of the Reference Voltage1
∆VSHREF1
-
1
-
mV
SH_OUT Coefficient
of the Reference Voltage2
∆VSHREF2
-
2
-
mV
ISH_IN
-0.2
0.0
0.2
μA
Dynamic Impedance1
ZSH_OUT1
-
0.3
-
Ω
Dynamic Impedance2
ZSH_OUT2
-
0.2
-
Ω
ISH_OUT
20
40
75
μA
VSH_OUT=5V
SH_OUT Sink
Current=100µA
VSH_OUT=5V
SH_OUT Sink
Current=100µA
Temperature=25°C to 105°C
VSH_OUT=2.7V to 5V
SH_OUT Sink
Current=100µA
VSH_OUT=5V to 20V
SH_OUT Sink
Current=100µA
VSH_IN=2V
SH_OUT Sink Current
=100µA to 300µA
(VSH_OUT=2.7V)
SH_OUT Sink Current
=100µA to 300µA
(VSH_OUT=20V)
VSH_IN=0V, VSH_OUT=20V
ISH_OUT_MIN
1
-
-
mA
VSH_IN=0.85V, VSH_OUT=2.7V
VSHI_OVP1
0.90
0.85
32.5
31.5
100
1.00
0.95
35
34
200
1.10
1.05
37.5
36.5
300
V
VSHI_OVP2
VSHO_OVP1
VSHO_OVP2
tLATCH2
V
V
V
μs
ILATCH_SH_IN_OVP
1.3
2.5
5
mA
Parameter
Symbol
Unit
Conditions
Shunt Regulator BLOCK (Other Chip)
Reference Voltage
Reference Input Current
SH_OUT Current at SH_IN=Low
SH_OUT Sink Current
SH_IN OVP Detection Voltage1
SH_IN OVP Detection Voltage2
SH_OUT OVP Detection Voltage
SH_OUT OVP Detection Voltage2
LATCH Timer
SH_OUT Sink Current
at LATCH Mode
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VSH_IN= Sweep Up
VSH_IN= Sweep Down
VSH_OUT Sweep Up
VSH_OUT Sweep Down
VSH_OUT=5V, VSH_IN=0V
TSZ02201-0F4F0A2BM1R0-1-2
20. Apr. 2016 Rev.002
BM1R00xxxF
Typical Performance Curves
1.4
1.4
Ta=105°C
1.2
1.2
Circuit
Current: IACT [mA]
CircuitCurrent
Circuit Current : IACT [mA]
Circuit Current IACT [mA]
Ta=25°C
1.0
0.8
0.6
Ta=-40°C
0.4
0.2
1.0
Ta=25°C
0.8
0.6
0.4
Ta=-40°C
0.2
0.0
0
5
10
15
20
25
Input
Voltage
Input
Voltage
: VVcc[V]
CC [V]
0.0
30
0.0
Figure 3. Circuit Current vs Input Voltage
(Stop Switching State)
0.5
1.0 1.5 2.0 2.5 3.0
InputVoltage
Voltage: V
Vcc[V]
Input
CC [V]
3.5
4.0
Figure 4. Circuit Current vs Input Voltage
(Stop Switching State VCC Zoom)
200
80
SH_OUT Sink
[µA]
Sink Current
Current I:SH_OUT
ISH_OUT[µA
]
SH_OUT
180
Circuit
[µA]
ISLEEP[µA
]
Circuit Current
Current:ISLEEP
Ta=105°C
Ta=105°C
160
Ta=25°C
140
120
100
Ta=-40°C
80
60
40
70
60
Ta=105°C
Ta=25°C
50
40
30
20
Ta=-40°C
10
20
0
0
0
5
10
15
20
25
Input
Voltage
Vcc[V]
Input
Voltage
: VCC
[V]
30
0
Figure 5. Circuit Current vs Input Voltage
(at Shut Down State)
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TSZ22111 • 15 • 001
5
10
15
20
25
Input
Voltage
Vcc[V]
SH_OUT Voltage : VSH_OUT [V]
30
Figure 6. Circuit Current vs SH_OUT Voltage
(VSH_IN=0V)
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20. Apr. 2016 Rev.002
BM1R00xxxF
0.820
11.0
0.815
10.8
0.810
MAX_TON
Timer
: tMAX_ON
[ µs ]
TMAX_ON[µs]
Timer
MAX_TON
SH_IN
[V]
VSHREF
SHREF[V]
SH_IN Voltage
Voltage: V
Typical Performance Curves - continued
VSH_OUT=20V
VSH_OUT=5V
0.805
0.800
0.795
VSH_OUT=3V
0.790
10.6
VCC=20V
VCC=20V
10.4
10.2
10.0
0.785
VCC=3V
VCC=3V
9.8
9.6
9.4
9.2
0.780
9.0
-40
-20
0
20 40
60
80
Temperature
Temperature
: Ta Ta
[°C][℃]
100
-40
Figure 7. SH_IN Voltage vs Temperature
(ISH_OUT=100µA)
-20
0
20
40
60
80
Temperature
Ta[°C]
[℃]
Temperature
: Ta
100
Figure 8. MAX_TON Timer vs Temperature
(RMAX_TON=100kΩ, VDRAIN=-0.3V<->VCC x 2)
-90
0
Gate
[mV]
ThresholdVoltageV
Voltage :GOFF
VGOFF
[mV]
Off Threshold
GateOFF
Gate
[mV]
: GON
VGON
GateON
On Threshold
Threshold Voltage V
[mV]
VCC=5V
VCC=5V
-95
VSH_OUT=3V
-100
VSH_OUT=5V
VSH_OUT=20V
-105
-110
-1
-2
-3
-4
VSH_OUT=20V
-5
-6
VSH_OUT=3V
-7
VSH_OUT=5V
-8
-9
-10
-40
-20
0
20
40
60
80
Temperature
Ta
[℃]
Temperature : Ta [°C]
100
-40
0
20
40
60
Temperature
Ta
[℃]
Temperature : Ta [°C]
80
100
Figure 10. Gate OFF Threshold vs Temperature
(DRAIN Sweep Up)
Figure 9. Gate ON Threshold vs Temperature
(DRAIN Sweep Down)
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-20
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BM1R00xxxF
Typical Performance Curves - continued
300
SH_OUT
ISH_OUT
Current :ISH_OUT
SH_OUT Current
A]
[ µ[µA]
SH_OUT
SH_OUT[ [µA]
µA]
SH_OUTCurrent
Current: IISH_OUT
5000
4000
Ta=105°C
V
Ta=25°C
3000
2000
Ta=-40°C
1000
250
Ta=105°C
V
200
150
Ta=25°C
100
Ta=-40°C
50
0
0
740
760
780 800
820
840
SH_IN
Voltage
VSH_IN
[V]
SH_IN
Voltage
: VSH_IN
[mV]
760
860
840
Figure 12. SH_OUT Current vs SH_IN Voltage
(VSH_OUT=5V, ZOOM UP)
Figure 11. SH_OUT Current vs SH_IN Voltage
(VSH_OUT=5V)
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TSZ22111 • 15 • 001
780
800
820
SH_IN
Voltage
VSH_IN
[V]
SH_IN
Voltage
: VSH_IN
[mV]
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20. Apr. 2016 Rev.002
BM1R00xxxF
Timing Chart
DRAIN
5V
4V
2.3V
≒1.3V
VOUT(VCC)
REG4V(Internal IC)
0.5V
BG_0.5V
(Internal IC)
BG_OK
(Internal IC)
1V
REF1V
(Internal IC)
4V
DRV4V
(Internal IC)
DRAIN
4COUNT
4V
VCC_UVLO
VCC=2.3V
0.4V
MAX_TON
GATE
DRAIN
9COUNT
AUTO_SHUTDOWN
(Internal IC)
200us
SHUTDOWN
DRAIN
265COUNT
Figure 13. Start Up Sequence
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BM1R00xxxF
Application Examples
RVCC
RSH_OUT1
VOUT
RSH_OUT2
PC1
CVCC
RDRAIN2
LFB
2
SH_IN
SR_GND
7
3
SH_OUT
GATE
6
4
SH_GND
MAX_TON
RFB1
8
1
DRAIN
VCC
D1 RDRAIN1
+ COUT
-
CFB1
RFB2
CFB2
RMAX_TON
5
R1 C1
GND
M1
Figure 14. Flyback Application Circuit
(Low Side FET)
M1
CVCC
RDRAIN1
RSH_OUT2
D1
RDRAIN2
1
VCC
DRAIN
8
2
SH_IN
SR_GND
7
3
SH_OUT
GATE
6
4
RFB1
RFB2
RVCC
RSH_OUT1
PC1
VOUT
LFB
SH_GND
MAX_TON
+ COUT
-
CFB1
CFB2
RMAX_TON
5
R1 C1
GND
Figure 15. Flyback Application Circuit
(High Side FET)
Built-in shunt regulator in the IC has been completely separated from internal and synchronous rectification control IC.
Therefore, the shunt regulator is possible to be used as a GND reference in High Side type of flyback application.
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20. Apr. 2016 Rev.002
BM1R00xxxF
RFB4
RFB3
CFB3
4
3
5
2
DRAIN
6
VCC
7
SR_GND
SH_IN
8
GATE
SH_OUT
RDRAIN4
D2
MAX_TON
RDRAIN3
SH_GND
LFB2
1
M2
Shunt regulator used as
overvoltage (OVP) protection
CVCC2
RSH_OUT13
PC2
RSH_OUT1
VOUT
RSH_OUT2
PC1
CVCC1
Disable MAX_TON by pulling up to VCC if not in
continuous mode operation such as in current resonance
and quasi-resonant applications
2
SH_IN
SR_GND
7
3
SH_OUT
GATE
6
4
SH_GND
MAX_TON
8
1
DRAIN
VCC
RFB1
+ COUT
-
CFB1
RFB2
CFB2
D1
RDRAIN2
RDRAIN1
5
Shunt regulator used in
feedback operation
LFB1
GND
M1
Figure 16. Resonant Half-bridge Application Circuit
Regarding Protection Applications
The built-in shunt regulator is high-voltage, low current consumption, high accuracy, and also suitable as a comparator for
protection application. On the above current resonant circuit, the shunt regulator is used as an overvoltage protection
circuit.
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BM1R00xxxF
Selection of Externally Connected Components
1.
MAX_TON Pin Setting
A resistance value which is connected to the MAX_TON terminal is used to set the timer to force the GATE output OFF.
(For detailed operation, please see "each block Operation / MAX_TON blocks")
Set timer is proportional to the resistance value which can be set in the range of 56k to 300k. This IC is capable of an
accuracy of 10us ± 6% at 100kΩ. However, accuracy deteriorates as the resistance value gets further away from
100kΩ.
For example, 5.6µs ±0.9µs at 56kΩ, 30µs ±4.5µs at 300kΩ.
(See graph below)
34.5u
tTp
P
30u
Jitter
G1
G1
Set the MAX_TON timer so that
the FET of the primary side (G1)
and the secondary side (G2) is
not simultaneously ON
10.6u
10.0u
9.4u
MAX_TON
TIMER
56k
100k
MAX_TON Resistor [ohm]
300k
TMAX_ON
tMAX_ON
Compulsion OFF
G2
G
2
6.5u
5.6u
4.7u
Timer Start
MAX_TON Timer [s]
25.5u
Figure 18. Primary FET and Secondary FET
Sequence at CCM Mode
Figure 17. MAX_TON Timer vs
MAX_TON Resistor(RMAX_TON)
To prevent destruction due to surge current in continuous mode, set the MAX_TON timer before turning on the primary
side FET (G1) to forcibly OFF the secondary side FET (G2). Regarding such variations, select a resistance value of
MAX_TON terminal so that the MAX_ON timer setting time is less than one cycle in the primary side (TP > TMAX_ON).
- The primary side of the maximum frequency = fMAX [Hz]
- The primary side of the maximum frequency accuracy = ∆fMAX [%]
- The primary side of the jitter frequency = fJITTER [Hz]
- Secondary side MAX_TON timer time = tMAX_ON
- Secondary side MAX_TON timer time accuracy = ∆tMAX_ON
- Secondary side MAX_TON When the connection resistance accuracy = ∆R
10000 [kΩ][kHz]
RMAX_TON[kΩ] <
(1+∆tMAX_ON[%]+∆R[%] +∆fMAX[%])×(fMAX[kHz]+fJITTER [kHz])
Frequency Variation Ratio
2.
Maximum Frequency Value
Calculation Example
Primary side frequency 100kHz ± 5%
Primary side jitter frequency 8kHz
Secondary side MAX_TON timer accuracy = 7%
Secondary side MAX_TON connection resistance accuracy = 1%
10000 [kΩ][kHz]
RMAX_TON [kΩ] <
= 81.94 [kΩ]
(1+5%+1%+7%)×(100kHz+8kHz)
With these conditions, MAX_TON Resistor(RMAX_TON) should be set to 81kΩ or less. In addition, it is recommended that
the temperature characteristics of each component should also be taken into account.
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TSZ02201-0F4F0A2BM1R0-1-2
20. Apr. 2016 Rev.002
BM1R00xxxF
I/O Equivalent Circuits
PIN 1: VCC / PIN 6: GATE / PIN 7: SR_GND
PIN 8: DRAIN
Internal REG
1.VCC
8.DRAIN
SR
block
6.GATE
7.SR_GND
7.SR_GND
PIN 2: SH_IN / PIN 3: SH_OUT / PIN 4: SH_GND
PIN 5: MAX_TON
Internal REG
3.SH_OUT
2.SH_IN
4.SH_GND
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TSZ22111 • 15 • 001
5.MAX_TON
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BM1R00xxxF
Notes on the layout
R VC C
R SH_ OUT1
VOUT
R SH_ OU T2
PC1
(1)
(5)
CVCC
(6)
4
SH_GND MAX_TON
GATE
6
3
SH_OUT
SR _GND
7
SH_IN
8
VCC
2
DRAIN
1
(2)
RFB 1
+
C OUT
-
C FB1
RFB 2
5
RDRAIN2
(3)
RDRAIN1
R MAX_TON
D1
CFB 2
R1 C1
(8)
M1
LFB1
(5)
GND
Rsnb
Csnb
(7)
(4)
Figure 19. Flyback Application Circuit
(Low Side FET)
(1) VCC line may malfunction under the influence of switching noise.
Therefore, it is recommended to insert a capacitor CVCC between the VCC and SR_GND terminal.
(2) SH_IN terminal is a high impedance line. To avoid crosstalk, electrical wiring should be as short as possible and not in
parallel with the switching line.
(3) MAX_TON terminal has a 0.4V output. The external components of the MAX_TON terminal affects the forced OFF time due
to switching. Thus, R1 and C1 should be connected to MAX_TON terminal as near as possible. It is also recommended to
use an independent electrical wiring in connection with SR_GND terminal.
(4) The synchronous rectification controller IC must accurately monitor the VDS generated in the FET. Accordingly, the electrical
wiring between the DRAIN to DRAIN and SR_GND to SOURCE of the IC and FET respectively should be connected
independently.
(5) The SH_GND of the shunt regulator and the feedback resistors of VOUT are recommended to be connected to the GND of
the output with an independent electrical wiring.
(6) The DRAIN terminal is a 0↔100V switching line. Use a narrow wiring and connect as short as possible.
(7) Use an independent wiring if connecting a snubber circuit between the DS of the FET. The connection of the transformer
output and the SOURCE of the FET should be thick and short as possible.
(8) Due to the DRAIN pin detects the small voltage, a malfunction which the switch turns ON/OFF caused by the surge voltage
may occur. So that, the filters such as the ferrite bead are recommended for alleviating the surge voltage.
(Note 6)
Configuration example
:
LFB1 ( a ferrite bead for suppressing the surge voltage) : MMZ1608S202A
D1 ( a schottky barrier diode) : RB751G-40
RDRAIN1 ( a filter resistor for the FET turn off ) : 0.3k - 2kΩ
RDRAIN2 ( a current limiting resistor to the DRAIN terminal) : 150Ω
(Note 6) The value is not a guaranteed value, but for reference. Please choose the optimum values of the components after sufficient evaluations based
on the actual application.
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BM1R00xxxF
Operational Notes
1.
Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply
pins.
2.
Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at
all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic
capacitors.
3.
Ground Voltage
Except for pins the output and the input of which were designed to go below ground, ensure that no pins are at a
voltage below that of the ground pin at any time, even during transient condition.
4.
Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5.
Thermal Consideration
Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may
result in deterioration of the properties of the chip. In case of exceeding this absolute maximum rating, increase the
board size and copper area to prevent exceeding the maximum junction temperature rating.
6.
Recommended Operating Conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately obtained.
The electrical characteristics are guaranteed under the conditions of each parameter.
7.
Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply.
Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing
of connections.
8.
Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
9.
Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject
the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should
always be turned off completely before connecting or removing it from the test setup during the inspection process. To
prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and
storage.
10. Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and
unintentional solder bridge deposited in between pins during assembly to name a few.
11. Unused Input Terminals
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge
acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause
unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power
supply or ground line.
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BM1R00xxxF
Operational Notes - continued
12. Regarding Input Pins of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Resistor
Transistor (NPN)
Pin A
Pin B
C
E
Pin A
N
P+
P
N
N
P+
N
Parasitic
Elements
N
P+
N P
N
P+
B
N
C
E
Parasitic
Elements
P Substrate
P Substrate
GND
Parasitic
Elements
Pin B
B
GND
GND
GND
Parasitic
Elements
N Region
close-by
Figure 20. Example of Monolithic IC Structure
13. Ceramic Capacitor
When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
14. Area of Safe Operation (ASO)
Operate the IC such that the output voltage, output current, and the maximum junction temperature rating are all within
the Area of Safe Operation (ASO).
15. Thermal Shutdown Circuit(TSD)
BM1R00121F – BM1R00150F (Auto Restart Protection Series)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always be
within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the
junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls
below the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat
damage.
BM1R00001F – BM1R00030F (Latch Protection Series)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always be
within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the
junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. The IC should be
powered down and turned ON again to resume normal operation because the TSD circuit keeps the outputs at the OFF
state even if the TJ falls below the TSD threshold.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat
damage.
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BM1R00xxxF
Ordering Information
B
M
1
R
0
0
x
x
Part Number
x
F
-
E2
Package
F:SOP8
Packaging and forming specification
E2: Embossed tape and reel
(SOP8)
Marking Diagram
SOP8 (TOP VIEW)
Part Number Marking
LOT Number
1PIN MARK
Part Number Marking
00xxx
Package
SOP8
Orderable Part Number
BM1R00xxxF-E2
Latch Protection Series
Function Name
BM1R00001
BM1R00002
BM1R00003
BM1R00004
BM1R00005
BM1R00006
BM1R00007
BM1R00008
BM1R00009
BM1R00010
BM1R00011
BM1R00012
BM1R00013
BM1R00014
BM1R00015
BM1R00016
BM1R00017
BM1R00018
BM1R00019
BM1R00020
BM1R00021
BM1R00022
BM1R00023
BM1R00024
BM1R00025
BM1R00026
BM1R00027
BM1R00028
BM1R00029
BM1R00030
Part Number Compulsion
ON Time
Marking
( μs)
00001
1
00002
1
00003
1
00004
1
00005
1
00006
1.5
00007
1.5
00008
1.5
00009
1.5
00010
1.5
00011
2.3
00012
2.3
00013
2.3
00014
2.3
00015
2.3
00016
2.8
00017
2.8
00018
2.8
00019
2.8
00020
2.8
00021
3.5
00022
3.5
00023
3.5
00024
3.5
00025
3.5
00026
NONE
00027
NONE
00028
NONE
00029
NONE
00030
NONE
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TSZ22111 • 15 • 001
Auto Restart Protection Series
Compulsion
OFF Time
( μs)
1.3
2
3
3.6
4.6
1.3
2
3
3.6
4.6
1.3
2
3
3.6
4.6
1.3
2
3
3.6
4.6
1.3
2
3
3.6
4.6
1.3
2
3
3.6
4.6
Function Name
BM1R00121
BM1R00122
BM1R00123
BM1R00124
BM1R00125
BM1R00126
BM1R00127
BM1R00128
BM1R00129
BM1R00130
BM1R00131
BM1R00132
BM1R00133
BM1R00134
BM1R00135
BM1R00136
BM1R00137
BM1R00138
BM1R00139
BM1R00140
BM1R00141
BM1R00142
BM1R00143
BM1R00144
BM1R00145
BM1R00146
BM1R00147
BM1R00148
BM1R00149
BM1R00150
20/22
Part Number Compulsion
ON Time
Marking
( μs)
00121
1
00122
1
00123
1
00124
1
00125
1
00126
1.5
00127
1.5
00128
1.5
00129
1.5
00130
1.5
00131
2.3
00132
2.3
00133
2.3
00134
2.3
00135
2.3
00136
2.8
00137
2.8
00138
2.8
00139
2.8
00140
2.8
00141
3.5
00142
3.5
00143
3.5
00144
3.5
00145
3.5
00146
NONE
00147
NONE
00148
NONE
00149
NONE
00150
NONE
Compulsion
OFF Time
( μs)
1.3
2
3
3.6
4.6
1.3
2
3
3.6
4.6
1.3
2
3
3.6
4.6
1.3
2
3
3.6
4.6
1.3
2
3
3.6
4.6
1.3
2
3
3.6
4.6
TSZ02201-0F4F0A2BM1R0-1-2
20. Apr. 2016 Rev.002
BM1R00xxxF
Physical Dimension, Tape and Reel Information
Package Name
SOP8
(Max 5.35 (include.BURR))
(UNIT : mm)
PKG : SOP8
Drawing No. : EX112-5001-1
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© 2016 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
21/22
TSZ02201-0F4F0A2BM1R0-1-2
20. Apr. 2016 Rev.002
BM1R00xxxF
Revision History
Date
Revision
2.Mar.2016
20.Apr. 2016
20.Apr. 2016
20.Apr. 2016
001
002
002
002
Changes
Data Sheet Revision1 Release.
Modification: P4, P5 VOUT->VCC
Modification: P6, 74.2mm2->74.2mm x 74.2mm
Modification: P15, Fig17 graph.
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
22/22
TSZ02201-0F4F0A2BM1R0-1-2
20. Apr. 2016 Rev.002
Notice
Precaution on using ROHM Products
1.
Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
(Note 1)
intend to use our Products in devices requiring extremely high reliability (such as medical equipment
, transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PGA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.003
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2.
ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PGA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.003
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