DATASHEET

DG444, DG445
®
Data Sheet
June 4, 2007
Monolithic, Quad SPST, CMOS Analog
Switches
The DG444 and DG445 monolithic CMOS analog switches
are drop-in replacements for the popular DG211 and DG212
series devices. They include four independent single pole
single throw (SPST) analog switches and TTL and CMOS
compatible digital inputs.
FN3586.10
Features
• ON Resistance (Max) . . . . . . . . . . . . . . . . . . . . . . . . . 85Ω
• Low Power Consumption (PD) . . . . . . . . . . . . . . . <35μW
• Fast Switching Action
- tON (Max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250ns
- tOFF (Max, DG444) . . . . . . . . . . . . . . . . . . . . . . . 140ns
These switches feature lower analog ON resistance (<85Ω)
and faster switch time (tON <250ns) compared to the DG211
and DG212. Charge injection has been reduced, simplifying
sample and hold applications.
• Low Charge Injection
The improvements in the DG444 series are made possible
by using a high voltage silicon-gate process. An epitaxial
layer prevents the latch-up associated with older CMOS
technologies. The 44V maximum voltage range permits
controlling ±20V signals when operating with ±20V power
supplies.
• Single or Split Supply Operation
The four switches are bilateral, equally matched for AC or
bidirectional signals. The ON resistance variation with
analog signals is quite low over a ±5V analog input range.
The switches in the DG444 and DG445 are identical,
differing only in the polarity of the selection logic.
• Upgrade from DG211, DG212
• TTL, CMOS Compatible
• Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
• Audio Switching
• Battery Operated Systems
• Data Acquisition
• Hi-Rel Systems
• Sample and Hold Circuits
• Communication Systems
Pinout
• Automatic Test Equipment
DG444, DG445
(16 LD SOIC, TSSOP)
TOP VIEW
Ordering Information
PART
NUMBER
PART
TEMP.
MARKING RANGE (°C)
PKG.
DWG. #
IN1
1
16 IN2
D1
2
15 D2
DG444DY*
DG444DY
-40 to +85
16 Ld SOIC
M16.15
S1
3
14 S2
-40 to +85
V-
16 Ld SOIC
(Pb-free)
M16.15
13 V+
DG444DYZ*
(Note)
DG444DYZ
4
GND
5
12 VL
DG444DVZ*
(Note)
DG444DVZ
-40 to +85
16 Ld TSSOP M16.173
(Pb-free)
S4
6
11 S3
DG445DY*
DG445DY
-40 to +85
16 Ld SOIC
M16.15
D4
7
10 D3
-40 to +85
9 IN3
16 Ld SOIC
(Pb-free)
M16.15
8
DG445DYZ*
(Note)
DG445DYZ
IN4
DG445DVZ*
(Note)
DG445DVZ
-40 to +85
16 Ld TSSOP M16.173
(Pb-free)
PACKAGE
*Add “-T” suffix for tape and reel.
NOTE: Intersil Pb-free plus anneal products employ special Pb-free
material sets; molding compounds/die attach materials and 100% matte
tin plate termination finish, which are RoHS compliant and compatible
with both SnPb and Pb-free soldering operations. Intersil Pb-free
products are MSL classified at Pb-free peak reflow temperatures that
meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 1999, 2003, 2004, 2006, 2007. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
DG444, DG445
Functional Diagrams
Pin Descriptions
DG444
DG445
S1
IN1
S1
IN1
D1
S2
IN2
D1
S2
IN2
D2
S3
IN3
D2
S3
IN3
D3
S4
IN4
D3
S4
IN4
D4
D4
SWITCHES SHOWN FOR LOGIC “1” INPUT
TRUTH TABLE
LOGIC
VIN
DG444
DG445
0
≤0.8V
ON
OFF
1
≥2.4V
OFF
ON
Schematic Diagram
PIN
SYMBOL
DESCRIPTION
1
IN1
Logic Control for Switch 1
2
D1
Drain (Output) Terminal for Switch 1
3
S1
Source (Input) Terminal for Switch 1
4
V-
Negative Power Supply Terminal
5
GND
6
S4
Source (Input) Terminal for Switch 4
7
D4
Drain (Output) Terminal for Switch 4
8
IN4
Logic Control for Switch 4
9
IN3
Logic Control for Switch 3
10
D3
Drain (Output) Terminal for Switch 3
11
S3
Source (Input) Terminal for Switch 3
12
VL
Logic Reference Voltage
13
V+
Positive Power Supply Terminal (Substrate)
14
S2
Source (Input) Terminal for Switch 2
15
D2
Drain (Output) Terminal for Switch 2
16
IN2
Logic Control for Switch 2
Ground Terminal (Logic Common)
(One Channel)
V+
S
VL
VV+
INX
D
GND
V-
2
FN3586.10
June 4, 2007
DG444, DG445
Absolute Maximum Ratings
Thermal Information
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44V
GND to V-. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND - 0.3V) to (V+) + 0.3V
Digital Inputs, VS , VD (Note 1). . . . . (V-) -2V to (V+) + 2V or 30mA,
Whichever Occurs First
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . 30mA
Peak Current, S or D (Pulsed 1ms, 10% Duty Cycle Max) . . 100mA
Thermal Resistance (Typical, Note 2)
θJA (°C/W)
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
115
TSSOP Package . . . . . . . . . . . . . . . . . . . . . . . . . . .
150
Maximum Junction Temperature (Plastic Packages). . . . . . +150°C
Maximum Storage Temperature Range . . . . . . . . . -65°C to +150°C
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -40°C to +85°C
Voltage Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V (Max)
Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8V (Max)
Input High Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4V (Min)
Input Rise and Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . ≤20ns
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Signals on SX , DX , or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
2. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
Electrical Specifications
Test Conditions: V+ = +15V, V- = -15V, VL = 5V, VIN = 2.4V, 0.8V (Note 3),
Unless Otherwise Specified
PARAMETER
TEST CONDITIONS
TEMP
(°C)
(NOTE 4) (NOTE 5) (NOTE 4)
MIN
TYP
MAX
UNITS
DYNAMIC CHARACTERISTICS
RL = 1kΩ, CL = 35pF, VS = ±10V
(Figure 1)
Turn-ON Time, tON
+25
-
120
250
ns
DG444
+25
-
110
140
ns
DG445
+25
-
160
210
ns
+25
-
-1
-
pC
Turn-OFF Time, tOFF
Charge Injection, Q (Figure 2)
CL = 1nF, VG = 0V, RG = 0Ω
OFF Isolation (Figure 4)
RL = 50Ω, CL = 5pF, f = 1MHz
+25
-
60
-
dB
+25
-
-100
-
dB
+25
-
4
-
pF
Drain OFF Capacitance, CD(OFF)
+25
-
4
-
pF
Channel ON Capacitance,
CD(ON) + CS(ON)
+25
-
16
-
pF
Crosstalk (Channel-to-Channel)
(Figure 3)
Source OFF Capacitance, CS(OFF)
f = 1MHz, VANALOG = 0 (Figure 5)
DIGITAL INPUT CHARACTERISTICS
Input Current VIN Low, IIL
VIN Under Test = 0.8V,
All Others = 2.4V
Full
-0.5
-0.00001
0.5
μA
Input Current VIN High, IIH
VIN Under Test = 2.4V,
All Others = 0.8V
Full
-0.5
0.00001
0.5
μA
Full
-15
-
15
V
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, VANALOG
Drain-Source ON Resistance,
rDS(ON)
IS = 10mA, VD = ±8.5V,
V+ = 13.5V, V- = -13.5V
+25
-
50
85
Ω
Full
-
-
100
Ω
Source OFF Leakage Current, IS(OFF)
V+ = 16.5V, V- = -16.5V,
VD = ±15.5V, VS = 15.5V
+25
-0.5
0.01
0.5
nA
+85
-5
-
5
nA
3
FN3586.10
June 4, 2007
DG444, DG445
Electrical Specifications
Test Conditions: V+ = +15V, V- = -15V, VL = 5V, VIN = 2.4V, 0.8V (Note 3),
Unless Otherwise Specified (Continued)
PARAMETER
TEMP
(°C)
TEST CONDITIONS
Drain OFF Leakage Current,
ID(OFF)
V+ = 16.5V, V- = -16.5V,
VD = ±15.5V, VS = 15.5V
Channel ON Leakage Current,
ID(ON) + IS(ON)
(NOTE 4) (NOTE 5) (NOTE 4)
MIN
TYP
MAX
UNITS
+25
-0.5
0.01
0.5
nA
+85
-5
-
5
nA
V+ = 16.5V, V- = -16.5V,
VS = VD , = ±15.5V
+25
-0.5
0.08
0.5
nA
+85
-10
-
10
nA
V+ = 16.5V, V- = -16.5V,
VIN = 0V or 5V
+25
-
0.001
1
μA
+85
-
-
5
μA
+25
-1
-0.0001
-
μA
+85
-5
-
-
μA
+25
-
0.001
1
μA
+85
-
-
5
μA
+25
-1
-0.001
-
μA
+85
-5
-
-
μA
POWER SUPPLY CHARACTERISTICS
Positive Supply Current, I+
Negative Supply Current, I-
Logic Supply Current, IL
Ground Current, IGND
Electrical Specifications
(Single Supply) Test Conditions: V+ = 12V, V- = 0V, VL = 5V, VIN = 2.4V, 0.8V (Note 3),
Unless Otherwise Specified
TEMP
(°C)
(NOTE 4)
MIN
(NOTE 5)
TYP
(NOTE 4)
MAX
UNITS
RL = 1kΩ, CL = 35pF, VS = 8V
(Figure 1)
+25
-
300
450
ns
+25
-
60
200
ns
CL = 1nF, VG = 6V, RG = 0Ω
+25
-
2
-
pC
Full
0
-
12
V
IS = -10mA, VD = 3V, 8V
V+ = 10.8V, VL = 5.25V
+25
-
100
160
Ω
Full
-
-
200
Ω
V+ = 13.2V, VIN = 0V or 5V,
VL = 5.25V
+25
-
0.001
1
μA
Full
-
-
5
μA
+25
-1
-0.0001
-
μA
Full
-5
-
-
μA
+25
-
0.001
1
μA
Full
-
-
5
μA
+25
-1
-0.001
-
μA
Full
-5
-
-
μA
PARAMETER
TEST CONDITIONS
DYNAMIC CHARACTERISTICS
Turn-ON Time, tON
Turn-OFF Time, tOFF
Charge Injection, Q (Figure 2)
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, VANALOG
Drain-Source ON Resistance, rDS(ON)
POWER SUPPLY CHARACTERISTICS
Positive Supply Current, I+
Negative Supply Current, I-
Logic Supply Current, IL
Ground Current, IGND
NOTES:
3. VIN = input voltage to perform proper function.
4. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
5. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
4
FN3586.10
June 4, 2007
DG444, DG445
Test Circuits and Waveforms
VO is the steady state output with the switch on. Feedthrough via switch capacitance may result in spikes at the leading and trailing
edge of the output waveform.
VL
tr < 20ns
tf < 20ns
3V
LOGIC
INPUT
50%
SWITCH
INPUT
0V
SWITCH
INPUT VS
VO
D1
S1
VO
IN1
tOFF
SWITCH
OUTPUT
V+
80%
80%
CL
RL
LOGIC
INPUT
3V
GND
V-
0V
tON
NOTE: Logic input waveform is inverted for switches that have
the opposite logic sense.
Repeat test for Channels 2, 3 and 4.
For load conditions, see Specifications. CL includes fixture and
stray capacitance.
RL
V O = V S -----------------------------------R L + r DS ( ON )
FIGURE 1A. MEASUREMENT POINTS
FIGURE 1B. TEST CIRCUIT
FIGURE 1. SWITCHING TIMES
SWITCH
OUTPUT
VL
ΔVO
INX
(DG444)
OFF
RG
OFF
ON
V+
D1
VO
VG
CL
V-
INX
(DG445)
VIN = 3V
ON
Q = ΔVO x CL
OFF
OFF
GND
FIGURE 2B. TEST CIRCUIT
FIGURE 2A. MEASUREMENT POINTS
FIGURE 2. CHARGE INJECTION
V+
+15V
+15V
C
C
SIGNAL
GENERATOR 10dBm
SIGNAL
GENERATOR 10dBm
VS
VD
50Ω
0V, 2.4V
IN1
IN2
0V, 2.4V
VD
ANALYZER
RL
NC
C
GND
V-15V
FIGURE 3. CROSSTALK TEST CIRCUIT
5
V+
VS
INX
0V, 2.4V
VD
ANALYZER
RL
GND
V-
C
-15V
FIGURE 4. OFF ISOLATION TEST CIRCUIT
FN3586.10
June 4, 2007
DG444, DG445
Test Circuits and Waveforms
(Continued)
+15V
C
V+
VS
INX
0V, 2.4V
IMPEDANCE
ANALYZER
VD
f = 1MHz
C
V-
GND
-15V
FIGURE 5. SOURCE/DRAIN CAPACITANCES TEST CIRCUIT
Application Information
VIN
FET INPUT
OP AMP 3
2
+5V
12
2
+15V
7
6
4
+15V
-15V
13
+
VOUT
-
V+
VL
+5V
+15V
VL
+15V
V+
1/ DG444
4
+15V
VOUT
3
+5V
GAIN1
AV = 1
1
R1
90kΩ
15
GAIN2
AV = 10
0V
10kΩ
GND V-
16
R2
5kΩ
11
9
R3
4kΩ
FIGURE 7. LEVEL SHIFTER
6
7
GAIN4
AV = 100
VIN
14
10
GAIN3
AV = 20
0V
8
R4
1kΩ
DG444 OR DG445
VGND
4
-15V
5
GAIN ERROR IS DETERMINED ONLY BY
THE RESISTOR TOLERANCE, OP AMP OFFSET
AND CMRR WILL LIMIT ACCURACY OF CIRCUIT
R1 + R2 + R3 + R4
V OUT
---------------- = ------------------------------------------------ = 100
R4
V IN
WITH SW4 CLOSED
FIGURE 6. PRECISION WEIGHTED RESISTOR
PROGRAMMABLE GAIN AMPLIFIER
6
FN3586.10
June 4, 2007
DG444, DG445
Typical Performance Curves
105
104
4
IL , I+, I-, IGND (nA)
103
VIN (V)
3
VL = 7V
2
VL = 5V
I+, IGND
102
10
-(I-)
1
0.1
1
0.01
0
0
4
8
12
SUPPLY VOLTAGE (±V)
16
20
IL
0.001
-55
FIGURE 8. SWITCHING THRESHOLD vs SUPPLY VOLTAGE
0
50
TEMPERATURE (°C)
100
125
FIGURE 9. SUPPLY CURRENT vs TEMPERATURE
105
80
V+ = +15V
V- = -15V
70
104
60
rDS(ON) (Ω)
IIN (pA)
103
102
10
50
+85°C
40
+25°C
30
0°C
-40°C
20
1
10
0.1
-55
0
50
100
0
-15
125
0
VD (V)
TEMPERATURE (°C)
FIGURE 10. INPUT CURRENT vs TEMPERATURE
15
FIGURE 11. rDS(ON) vs VD AND TEMPERATURE
50
140
120
40
CROSSTALK
V+ = +15V
V- = -15V
30
100
20
Q (pC)
(dB)
80
OFF ISOLATION
60
10
CL = 10nF
CL = 1nF
0
40
-10
20
0
100
V+ = +15V
V- = -15V
PGEN = 10dBm
1k
-20
10k
100k
1M
10M
FREQUENCY (Hz)
FIGURE 12. CROSSTALK REJECTION AND OFF ISOLATION
vs FREQUENCY
7
-30
-10
0
VS (V)
10
FIGURE 13. CHARGE INJECTION vs SOURCE VOLTAGE
FN3586.10
June 4, 2007
DG444, DG445
Typical Performance Curves
(Continued)
25
20
V+ = +15V
V- = -15V
IS(OFF) , ID(OFF)
0
20
-20
IS , ID (pA)
CS , D (pF)
CS(ON) + CD(ON)
15
10
-40
IS(ON) + ID(ON)
-60
V+ = +15V
V- = -15V
FOR I(OFF) , VD = -VS
CS(OFF) , CD(OFF)
5
-80
0
-15
-10
-5
0
VA (V)
5
10
-100
-15
15
FIGURE 14. SOURCE/DRAIN CAPACITANCE vs ANALOG
VOLTAGE
-10
-5
0
VS , VD (V)
5
10
15
FIGURE 15. LEAKAGE CURRENTS vs ANALOG VOLTAGE
160
150
V+ = +15V, V- = -15V
VL = 5V
V+ = +15V
V- = -15V
140
tON
120
tON
tON, tOFF (ns)
tON, tOFF (ns)
100
100
80
tOFF
50
tOFF
60
40
20
2
3
4
0
5
2
3
VIN (V)
4
5
VIN (V)
FIGURE 16. SWITCHING TIME vs INPUT VOLTAGE (DG444)
FIGURE 17. SWITCHING TIME vs INPUT VOLTAGE (DG445)
160
160
VL = 5V
140
140
tOFF
tON
120
tON, tOFF (ns)
tON, tOFF (ns)
120
100
80
60
100
80
tON
60
tOFF
40
40
20
10
12
14
16
18
SUPPLY VOLTAGE (±V)
20
22
FIGURE 18. SWITCHING TIME vs POWER SUPPLY VOLTAGE
(DG444)
8
20
10
12
14
16
18
20
22
SUPPLY VOLTAGE (±V)
FIGURE 19. SWITCHING TIME vs POWER SUPPLY VOLTAGE
(DG445)
FN3586.10
June 4, 2007
DG444, DG445
Typical Performance Curves
(Continued)
400
500
V+ = +12V, V- = 0V
VL = 5V
400
tON, tOFF (ns)
300
tON, tOFF (ns)
V- = 0V, VL = 5V
tON
200
100
tOFF
tON (444)
300
tON (445)
200
tOFF (445)
100
tOFF (444)
0
0
2
3
4
8
5
VIN (V)
FIGURE 20. SWITCHING TIME vs INPUT VOLTAGE (DG444)
(SINGLE 12V SUPPLY)
10
12
14
16
18
POSITIVE SUPPLY (V)
20
22
FIGURE 21. SWITCHING TIMES vs SINGLE SUPPLY VOLTAGE
10
30
V+ = 12V
V- = 0V
IS(OFF) , ID(OFF)
0
20
IS , ID (pA)
Q (pC)
-10
10
CL = 10nF
-20
CL = 1nF
IS(ON) + ID(ON)
V+ = +12V
V- = 0V
FOR ID , VS = 0
0
-30
FOR IS, VD = 0
-40
-10
0
4
0
8
6
VS , VD (V)
VS (V)
FIGURE 22. CHARGE INJECTION vs SOURCE VOLTAGE
(SINGLE 12V SUPPLY)
12
FIGURE 23. SOURCE/DRAIN LEAKAGE CURRENTS (SINGLE
12V SUPPLY)
20
V+ = +12V
V- = 0V
CS(ON) + CD(ON)
CS , D (pF)
15
10
CS(OFF) , CD(OFF)
5
0
0
6
VA (V)
12
FIGURE 24. SOURCE/DRAIN CAPACITANCE vs ANALOG VOLTAGE (SINGLE 12V SUPPLY)
9
FN3586.10
June 4, 2007
DG444, DG445
Die Characteristics
METALLIZATION:
PASSIVATION:
Type: SiAl
Thickness: 12kÅ ±1kÅ
Type: Nitride
Thickness: 8kÅ ±1kÅ
WORST CASE CURRENT DENSITY:
9.1 x 104 A/cm2
Metallization Mask Layout
DG444, DG445
D1
(2)
IN1
(1)
IN2
(16)
(15) D2
(14) S2
S1 (3)
(13) V+ SUBSTRATE
V- (4)
GND (5)
(12) VL
S4 (6)
(11) S3
(7)
D4
10
(8)
IN4
(9)
IN3
(10)
D3
FN3586.10
June 4, 2007
DG444, DG445
Thin Shrink Small Outline Plastic Packages (TSSOP)
M16.173
N
16 LEAD THIN SHRINK SMALL OUTLINE PLASTIC PACKAGE
INDEX
AREA
E
0.25(0.010) M
2
INCHES
E1
GAUGE
PLANE
-B1
B M
L
0.05(0.002)
-A-
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
-
0.043
-
1.10
-
A1
3
A
D
-C-
e
α
c
0.10(0.004)
C A M
0.05
0.15
-
A2
0.033
0.037
0.85
0.95
-
b
0.0075
0.012
0.19
0.30
9
c
0.0035
0.008
0.09
0.20
-
B S
0.002
D
0.193
0.201
4.90
5.10
3
0.169
0.177
4.30
4.50
4
0.026 BSC
E
0.246
L
0.020
N
α
NOTES:
1. These package dimensions are within allowable dimensions of
JEDEC MO-153-AB, Issue E.
0.006
E1
e
A2
A1
b
0.10(0.004) M
0.25
0.010
SEATING PLANE
MILLIMETERS
0.65 BSC
0.256
6.25
0.028
0.50
16
0o
-
0.70
6
16
8o
0o
-
6.50
7
8o
Rev. 1 2/02
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate
burrs. Mold flash, protrusion and gate burrs shall not exceed
0.15mm (0.006 inch) per side.
4. Dimension “E1” does not include interlead flash or protrusions.
Interlead flash and protrusions shall not exceed 0.15mm (0.006
inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual
index feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. Dimension “b” does not include dambar protrusion. Allowable
dambar protrusion shall be 0.08mm (0.003 inch) total in excess
of “b” dimension at maximum material condition. Minimum space
between protrusion and adjacent lead is 0.07mm (0.0027 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact. (Angles in degrees)
11
FN3586.10
June 4, 2007
DG444, DG445
Small Outline Plastic Packages (SOIC)
M16.15 (JEDEC MS-012-AC ISSUE C)
N
INDEX
AREA
H
0.25(0.010) M
16 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE
B M
INCHES
E
-B1
2
3
L
SEATING PLANE
-A-
A
D
h x 45°
-C-
e
A1
B
C
0.10(0.004)
0.25(0.010) M
C A M
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
0.0532
0.0688
1.35
1.75
-
A1
0.0040
0.0098
0.10
0.25
-
B
0.013
0.020
0.33
0.51
9
C
0.0075
0.0098
0.19
0.25
-
D
0.3859
0.3937
9.80
10.00
3
E
0.1497
0.1574
3.80
4.00
4
e
α
B S
0.050 BSC
1.27 BSC
-
H
0.2284
0.2440
5.80
6.20
-
h
0.0099
0.0196
0.25
0.50
5
L
0.016
0.050
0.40
1.27
6
N
α
NOTES:
MILLIMETERS
16
0°
16
8°
0°
7
8°
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication Number 95.
Rev. 1 6/05
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Interlead
flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater above
the seating plane, shall not exceed a maximum value of 0.61mm
(0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions are
not necessarily exact.
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12
FN3586.10
June 4, 2007