Datasheet

PHOTOMULTIPLIER TUBES
R3788, R4332
High Sensitivity, Bialkali Photocathode
28 mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type
FEATURES
●Wide Spectral Response
R3788 ................................................... 185 nm to 750 nm
R4332 ................................................... 160 nm to 750 nm
●High Cathode Sensitivity
Luminous ................................................. 120 µA/lm Typ.
Radiant at 420 nm ...................................... 90 mA/W Typ.
Quantum Efficiency at 210 nm ........... 40 % Typ. (R4332)
●High Anode Sensitivity (at 1000 V)
Luminous .................................................. 1200 A/lm Typ.
Radiant at 420 nm ............................... 9.0 × 105 A/W Typ.
APPLICATIONS
●Fluorescence Spectrophotometers
●Emission Spectrophotometers
●Atomic Absorption Spectrophotometers
SPECIFICATIONS
Figure 1: Typical Spectral Response
GENERAL
Unit
nm
nm
nm
—
mm
—
—
—
—
—
pF
pF
—
g
°C
°C
—
—
PHOTOCATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
Parameter
Description/Value
R3788
185 to 750
Spectral
R4332
160 to 750
Response
420
Wavelength of Maximum Response
MateriaI
Bialkali
Photocathode
Minimum Effective Area
8 × 24
R3788
UV glass
Window
R4332
Fused silica
Material
Bialkali
Secondary Emitting Surface
Circular-cage
Structure
Dynode
9
Number of Stages
4
Direct Interelectrode Anode to Last Dynode
6
Anode to All Other Electrodes
Capacitances
Base
11-pin base JEDEC No. B11-88
Weight
Approx. 45
Operating Ambient Temperature
-30 to +50
Storage Temperature
-30 to +50
SuitabIe Socket
E678–11A (Sold Separately)
E717–63 (Sold Separately)
SuitabIe Socket Assembly
E717–74 (Sold Separately)
100
TPMSB0081EA
R4332
CATHODE RADIANT
SENSITIVITY
QUANTUM
EFFICIENCY
10
R3788
1
0.1
0.01
100
200
300
400
500
600
700
WAVELENGTH (nm)
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Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
800
PHOTOMULTIPLIER TUBES R3788, R4332
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Between Anode and Cathode
Supply Voltage
Between Anode and Last Dynode
Average Anode Current A
Value
1250
250
0.1
Unit
V
V
mA
CHARACTERISTlCS (at 25 °C)
Parameter
Min.
Quantum Efficiency
(at Peak Wavelength)
Luminous B
at 194 nm
Radiant
at 210 nm
at 420 nm
Red/White Ratio C
Blue Sensitivity Index D
Luminous E
at 194 nm
at 210 nm
Radiant
at 420 nm
Cathode Sensitivity
Anode Sensitivity
—
100
—
—
—
—
—
500
—
—
—
—
—
—
—
—
—
—
—
Gain E
Anode Dark Current F (After 30 min Storage in Darkness)
ENI (Equivalent Noise Input) G
Anode Pulse Rise Time H
E
Time Response
Electron Transit Time I
Transit Time Spread (TTS) J
Light Hysteresis
Anode Current Stability K
Voltage Hysteresis
R3788
Typ.
30
(at 250 nm)
120
31
50
90
0.01
10
1200
3.1 × 105
5.0 × 105
9.0 × 105
1.0 × 107
5
1.4 × 10-16
2.2
22
1.2
0.1
1.0
Max.
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
50
—
—
—
—
—
—
100
—
—
—
—
—
500
—
—
—
—
—
—
—
—
—
—
—
R4332
Typ.
40
(at 210 nm)
120
60
68
90
0.01
10
1200
6.0 × 105
6.8 × 105
9.0 × 105
1.0 × 107
5
1.4 × 10-16
2.2
22
1.2
0.1
1.0
Max.
Unit
—
%
—
—
—
—
—
—
—
—
—
—
—
50
—
—
—
—
—
—
µA/lm
mA/W
mA/W
mA/W
—
—
A/lm
A/W
A/W
A/W
—
nA
W
ns
ns
ns
%
%
NOTES
A: Averaged over any interval of 30 seconds maximum.
B: The light source is a tungsten filament lamp operated at a distribution
temperature of 2856K. Supply voltage is 100 V between the cathode and
all other electrodes connected together as anode.
C: Red/White ratio is the quotient of the cathode current measured using a
red filter (Toshiba R-68) interposed between the light source and the tube
by the cathode current measured with the filter removed under the same
conditions as Note B.
D: The value is cathode output current when a blue filter (Corning CS 5-58
polished to 1/2 stock thickness) is interposed between the light source and
the tube under the same condition as Note B.
E: Measured with the same light source as Note B and with the voltage
distribution ratio shown in Table 1 below.
K
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9
1
1
1
1
× 100 (%)
1
1
1
1
1
P
1
SuppIy Voltage: 1000 V, K: Cathode, Dy: Dynode, P: Anode
2q.ldb.G.∆f
S
where q = Electronic charge (1.60 × 10-19 coulomb).
ldb = Anode dark current(after 30 minutes storage) in amperes.
G = Gain.
∆f = Bandwidth of the system in hertz. 1 hertz is used.
S = Anode radiant sensitivity in amperes per watt at the
wavelength of peak response.
l max.
li
l min.
TIME
0
F: Measured with the same supply voltage and voltage distribution ratio as
Note E after removal of light.
G:ENI is an indication of the photon-limited signal-to-noise ratio. It refers to
the amount of light in watts to produce a signal-to-noise ratio of unity in the
output of a photomultiplier tube.
ENI =
lmin.
li
ANODE
CURRENT
Distribution
Ratio
lmax.
Hysteresis =
Table 1: Voltage Distribution Ratio
Electrodes
H: The rise time is the time for the output pulse to rise from 10 % to 90 % of
the peak amplitude when the entire photocathode is illuminated by a delta
function light pulse.
I: The electron transit time is the interval between the arrival of delta function
light pulse at the entrance window of the tube and the time when the anode
output reaches the peak amplitude. In measurement, the whole
photocathode is illuminated.
J: Also called transit time jitter. This is the fluctuation in electron transit time
between individual pulses in the signal photoelectron mode, and may be
defined as the FWHM of the frequency distribution of electron transit times.
K: Hysteresis is temporary instability in anode current after light and voltage
are applied.
5
6
7 (minutes)
TPMSB0002EA
(1)Light Hysteresis
The tube is operated at 750 V with an anode current of 1 µA for 5 minutes.
The light is then removed from the tube for a minute. The tube is then
re-illuminated by the previous light level for a minute to measure the variation.
(2)Voltage Hysteresis
The tube is operated at 300 V with an anode current of 0.1 µA for 5 minutes.
The light is then removed from the tube and the supply voltage is quickly
increased to 800 V. After a minute, the supply voltage is then reduced to the
previous value and the tube is re-illuminated for a minute to measure the
variation.
Figure 2: Anode Luminous Sensitivity and Gain
Characteristics
105
TPMSB0032EB
Figure 3: Typical Time Response
TPMSB0004EC
108
100
80
60
TYPICAL GAIN
107
40
TRANS
IT TIME
106
102
105
TYPICAL ANODE
SENSITIVITY
101
20
TIME (ns)
103
GAIN
ANODE LUMINOUS SENSITIVITY (A/lm)
104
10
8
6
4
104
RISE T
IME
MINIMUM ANODE
SENSITIVITY
2
100
103
1
500
10-1
500
102
1500
1000
700
700
1000
1500
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
Figure 4: Typical ENI with Wavelength
TPMSB0082EA
10-9
TPMSB0034EA
10-10
10-13
EADCI (lm)
EQUIVALENT NOISE INPUT (W)
10-12
Figure 5: Typical EADCI (Equivalent Anode Dark Current Input)
vs. Supply Voltage
R4332
10-14
10-11
R3788
10-12
10-15
10-16
100
200
300
400
500
600
WAVELENGTH (nm)
700
800
10-13
500
700
1000
SUPPLY VOLTAGE (V)
1500
PHOTOMULTIPLIER TUBES R3788, R4332
Figure 6: Dimensional Outline and Basing Diagram (Unit: mm)
Figure 7: Socket (Unit: mm)
E678-11A
28.5 ± 1.5
49
8 MIN.
T9 BULB
Sold Separately
38
5
DY6
6
7
8 DY8
2
10 P
1
11
29
K
DY1
4
DY2
5
9 DY9
DIRECTION OF LIGHT
18
80 MAX.
DY7
DY3 3
94 MAX.
49.0 ± 0.25
24 MIN.
DY4 4
3.5
DY5
33
PHOTOCATHODE
Bottom View
(Basing Diagram)
32.2 ± 0.5
TACCA0064EA
11 PIN BASE
JEDEC No.B11-88
TPMSA0005EB
Figure 8: D Type Socket Assembly (Unit: mm) Sold Separately
E717-63
E717-74
HOUSING
(INSULATOR)
10
P
R10
9
DY8
8
R9
38.0 ± 0.3
49.0 ± 0.3
R8
DY7
7
DY6
6
26.0±0.2
DY5
5
DY4
4
TOP VIEW
DY3
3
2
R4
HOUSING
(INSULATOR)
POTTING
COMPOUND
2
DY1
K
1
22.4±0.2
K
°
10
R2
30°
8
-HV
AWG22 (VIOLET)
DY7
7
DY6
6
DY5
5
DY4
4
DY3
3
DY2
2
DY1
K
1
C3
R9
C2
R8
C1
R6
R5
R1 to R10 : 330 kΩ
C1 to C3 : 10 nF
R3
0.7
R1
11
DY8
R10
R4
SIDE VIEW
R3
DY2
9
R7
7
A
G
2.7
31.0 ± 0.5
DY9
32.0±0.5
C1
R1 to R10 : 330 kΩ
C1 to C3 : 10 nF
SIGNAL
OUTPUT (A)
GND (G)
10
C2
R5
0.7
30.0 +0
-1
4
R6
SOCKET
PIN No.
P
R7
29.0 ± 0.3
450 ± 10
C3
PMT
14.0±0.5
DY9
SIGNAL GND
SIGNAL OUTPUT
RG-174/U(BLACK)
POWER SUPPLY GND
AWG22 (BLACK)
26.0±0.2
SOCKET
PIN No.
32.0±0.5
PMT
3.5
33.0 ± 0.3
5
R2
R1
11
-HV (K)
4- 2.8
R13
* "Wiring diagram applies when -HV is supplied."
To supply +HV,connect the pin "G" to+HV, and the pin
"K" to the GND.
BOTTOM VIEW
TACCA0002EH
* Hamamatsu also provides C4900 series compact high voltage power
supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply.
TACCA0277EA
Warning–Personal Safety Hazards
Electrical Shock–Operating voltages applied to this
device present a shock hazard.
WEB SITE www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Electron Tube Division
314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: [email protected]
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United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: [email protected]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected]
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: [email protected]
TPMS1021E02
JUL. 2006. IP
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