This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors XP03312 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) M Di ain sc te on na tin nc ue e/ d For digital circuits ■ Package • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half • Code SMini5-G1 • Pin Name 1:Emitter (Tr1) 2: Base (Tr1) 3:Emitter (Tr2) ■ Basic Part Number • UNR2212 + UNR2112 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. ■ Features ■ Absolute Maximum Ratings Ta = 25°C Parameter Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V 100 mA Collector current Tr2 Collector-base voltage (Emitter open) VCBO −50 V Collector-emitter voltage (Base open) VCEO −50 V Collector current IC Total power dissipation PT Junction temperature Tj Storage temperature Tstg Ma int en an ce /D isc on tin Overall IC Publication date: May 2009 −100 mA 150 mW 150 °C −55 to +150 °C ue Tr1 Symbol SJJ00158CED 4: Collector (Tr2) 5: Collector (Tr1) Base (Tr2) ■ Marking Symbol: 4P ■ Internal Connection 5 4 Tr1 Tr2 1 2 3 1 This product complies with the RoHS Directive (EU 2002/95/EC). XP03312 ■ Electrical Characteristics Ta = 25°C ± 3°C • Tr1 Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 Min 50 Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.2 mA hFE VCE = 10 V, IC = 5 mA Forward current transfer ratio Collector-emitter saturation voltage VCE(sat) VOH Output voltage low-level VOL Unit V V µA 60 IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 kΩ Max 0.25 4.9 V V VCC = 5 V, VB = 2.5 V, RL = 1 kΩ di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Output voltage high-level Typ 0.1 M Di ain sc te on na tin nc ue e/ d Conditions 0.2 V Input resistance R1 −30% 22 +30% kΩ Resistance ratio R1 / R 2 0.8 1.0 1.2 Transition frequency fT VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. • Tr2 Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −50 Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0 − 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = −6 V, IC = 0 − 0.2 mA hFE VCE = −10 V, IC = −5 mA Forward current transfer ratio Collector-emitter saturation voltage VCE(sat) Conditions VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ VOL VCC = −5 V, VB = −2.5 V, RL = 1 kΩ ue VOH Output voltage low-level Transition frequency Max Unit V V − 0.1 µA 60 − 0.25 V − 0.2 V −4.9 V R1 −30% 22 +30% kΩ R1 / R 2 0.8 1.0 1.2 ce /D isc on tin Resistance ratio Typ IC = −10 mA, IB = − 0.3 mA Output voltage high-level Input resistance Min fT VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz an Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. en Common characteristics chart int PT Ta Total power dissipation PT (mW) Ma 250 200 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (°C) 2 SJJ00158CED This product complies with the RoHS Directive (EU 2002/95/EC). XP03312 Characteristics charts of Tr1 VCE(sat) IC 0.7 mA 0.6 mA 0.5 mA 0.4 mA hFE IC 400 IC / IB = 10 10 VCE = 10 V Forward current transfer ratio hFE IB = 1.0 mA 0.9 mA 0.8 mA 120 100 300 Ta = 75°C M Di ain sc te on na tin nc ue e/ d Collector current IC (mA) Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE 160 0.3 mA 0.2 mA 0.1 mA 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) 4 3 2 1 0.01 0.1 10 an Collector-base voltage VCB (V) en 1 10 104 0 100 100 −25°C 1 100 1 000 VIN IO 100 VO = 5 V Ta = 25°C 102 VO = 0.2 V Ta = 25°C 10 1 0.1 10 1 0.4 10 Collector current IC (mA) 103 ce /D isc on tin 1 int 0 0.1 25°C 100 Collector current IC (mA) Output current IO (µA) 5 −25°C 200 IO VIN f = 1 MHz IE = 0 Ta = 25°C Ma Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 0.1 ue 0 Ta = 75°C 25°C Input voltage VIN (V) 40 1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 80 0.01 0.6 0.8 1.0 1.2 Input voltage VIN (V) SJJ00158CED 1.4 0.1 1 10 100 Output current IO (mA) 3 This product complies with the RoHS Directive (EU 2002/95/EC). XP03312 Characteristics charts of Tr2 IC VCE VCE(sat) IC Ta = 25°C IB = −1.0 mA − 0.9mA − 0.8mA − 0.7mA − 0.6mA − 0.5mA −80 − 0.4mA hFE IC 400 IC / IB = 10 −10 −1 VCE = −10 V 300 Ta = 75°C 200 M Di ain sc te on na tin nc ue e/ d Collector current IC (mA) −120 Collector-emitter saturation voltage VCE(sat) (V) −100 Forward current transfer ratio hFE −160 − 0.2mA − 0.1mA −2 0 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) 3 2 1 0 − 0.1 −1 −10 −100 Ma int en an Collector-base voltage VCB (V) 4 −1 −10 0 −1 −100 Collector current IC (mA) −104 Output current IO (µA) 4 25°C −25°C 100 VO = −5 V Ta = 25°C −103 −102 −10 −1 − 0.4 − 0.6 − 0.8 −1.0 −1.2 Input voltage VIN (V) SJJ00158CED −10 −100 −1 000 Collector current IC (mA) IO VIN f = 1 MHz IE = 0 Ta = 25°C 5 − 0.01 − 0.1 ce /D isc on tin Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 6 −25°C ue 0 − 0.1 −1.4 VIN IO −100 Input voltage VIN (V) −40 Ta = 75°C 25°C di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. − 0.3mA VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 − 0.01 − 0.1 −1 −10 Output current IO (mA) −100 10° ue ±0.10 5 4 1 2 (0.65) (0.65) 1.3 ±0.1 2.0 ±0.1 3 +0.2 −0.1 ±0.1 (0.425) SMini5-G1 0.20 ±0.05 0.12 SJJ00158CED ±0.1 ±0.1 di p Pl lan nclu 1.25 e 0.9 ed de 0 to 0.1 as 2.1 pla m m s ev 0.9 ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty 5° d uc n.p bo yp pe t li e an ut d fec as lat yc on es le ic. t in sta co fo ge .jp rm . /en at 0.2 i o / n. ce /D isc on tin an en int Ma M Di ain sc te on na tin nc ue e/ d This product complies with the RoHS Directive (EU 2002/95/EC). XP03312 Unit: mm +0.05 −0.02 5 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es ne ain ain foll htt visit d d te te ow p:/ fo d /w llo is isc nan nan ing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i / on . (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. Pl ea Ma int en an ce /D isc on tin ue 20080805