PHOTOMULTIPLIER TUBES R4220 R4220P (For Photon Counting) Very High Cathode Sensitivity with Low Noise Photocathode FEATURES ●Spectral Response .................................. 185 nm to 710 nm ●High Cathode Sensitivity Luminous ......................................................... 100 µA/lm Radiant at 410 nm ............................................. 70 mA/W ●High Anode Sensitivity (at 1000 V) Luminous ......................................................... 1200 A/lm Radiant at 410 nm ...................................... 8.4 × 105 A/W ●Low Dark Current ....................................................... 0.2 nA ●Low Dark Counts (R4220P) ......................................... 10 s-1 APPLICATIONS ●Fluorescence Spectrometer ●Chemiluminescence Detection ●Raman Spectroscopy ●Low Light Level Ditection SPECIFICATIONS Figure 1: Typical Spectral Response TPMSB0010EA GENERAL Spectral Response Description / Value Unit 185 to 710 nm 410 nm Wavelength of Maximum Response Photocathode MateriaI Minimum Effective Area Window Material Low noise bialkali 8 24 UV glass Dynode Secondary Emitting Surface Structure Number of Stages Low noise bialkali Circular-cage 9 Direct Interelectrode Capacitances Anode to Last Dynode Anode to All Other Electrodes Base Weight Operating Ambient Temperature Storage Temperature SuitabIe Socket SuitabIe Socket Assembly 4 6 11-pin base JEDEC No. B11-88 45 -30 to +50 -30 to +50 E678–11A (Sold Separately) E717–63 (Sold Separately) E717–74 (Sold Separately) mm pF pF g °C °C CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) Parameter 100 10 CATHODE RADIANT SENSITIVITY 1 QUANTUM EFFICIENCY 0.1 0.01 100 200 300 400 500 600 700 800 WAVELENGTH (nm) Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2010 Hamamatsu Photonics K.K. PHOTOMULTIPLIER TUBES R4220, R4220P (For Photon Counting) MAXIMUM RATINGS (Absolute Maximum Values) Parameter Value Unit Supply Voltage Between Anode and Cathode (DC) 1250 V Between Anode and Last Dynode (DC) 250 V 0.1 mA Average Anode Current A CHARACTERISTlCS (at 25 °C) Parameter Cathode Sensitivity Quantum Efficiency (at peak wavelength) Luminous B Radiant (at peak wavelength) Blue Sensitivity Index C Anode Sensitivity Luminous D Radiant at 400 nm R4220 for General Purpose R4220P for Photon Counting Min. Min. Max. 23 100 70 8 80 1000 Gain E Typ. 1000 107 Max. Unit 23 100 70 8 % A/lm mA/W 1200 8.4 105 A/lm A/W 80 1200 8.4 105 1.2 Typ. 107 1.2 F Anode Dark Current After 30 minutes Storage in the darkness Anode Dark Counts F ENI(Equivalent Noise Input) G 0.2 3.30 0.2 10 2.0 10-17 0.5 50 nA s-1 10-17 3.30 W D Time Response Anode Pulse Rise Time H Electron Transit Time J Transit Time Spread (TTS) K 2.2 22 1.2 ns ns ns 0.1 1.0 0.1 1.0 % % L NOTES A: Averaged over any interval of 30 seconds maximum. B: The light source is a tungsten filament lamp operated at a distribution temperature of 2856 K. Supply voltage is 150 volts between the cathode and all other electrodes connected together as anode. C: The value is cathode output current when a blue filter(Corning CS-5-58 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as Note B. D: Measured with the same light source as Note B and with the anode-tocathode supply voltage and voltage distribution ratio shown in Table 1 below. E: Measured with the same supply voltage and voltage distribution ratio as Note D after removal of light. F: Measured at the plateau voltage. G:ENI is an indication of the photon-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. ENI = where 2q.ldb.G. f S q = Electronic charge (1.60 10-19 coulomb). ldb = Anode dark current(after 30 minute storage) in amperes. G = Gain. f = Bandwidth of the system in hertz. 1 hertz is used. S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response. H: The rise time is the time for the output pulse to rise from 10% to 90% of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. J: The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitude. In measurement, the whole photocathode is illuminated. K: Also called transit time jitter. This is the fluctuation in electron transit time between individual pulses in the signal photoelectron mode, and may be defined as the FWHM of the frequency distribution of electron transit times. L: Hysteresis is temporary instability in anode current after light and voltage are applied. lmax. Hysteresis = lmin. 100(%) li ANODE CURRENT Anode Current Stability Current Hysteresis Voltage Hysteresis 2.2 22 1.2 l max. li l min. TIME 5 0 6 7 (minutes) TPMSB0002EA (1)Current Hysteresis The tube is operated at 750 volts with an anode current of 1 micro-ampere for 5 minutes. The light is then removed from the tube for a minute. The tube is then re-illuminated by the previous light level for a minute to measure the variation. (2)Voltage Hysteresis The tube is operated at 300 volts with an anode current of 0.1 micro-ampere for 5 minutes. The light is then removed from the tube and the supply voltage is quickly increased to 800 volts. After a minute, the supply voltage is then reduced to the previous value and the tube is re-illuminated for a minute to measure the variation. Table 1:Voltage Distribution Ratio Electrodes Distribution Ratio K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 1 1 1 SuppIy Voltage : 1000 V (DC) K : Cathode, Dy : Dynode, 1 1 1 P : Anode 1 1 1 P 1 Figure 2: Typical Gain and Anode Dark Current ANODE DARK CURRENT (A) 10-5 Figure 3: Typical Time Response TPMSB0011EA 100 80 60 108 10-6 107 10-7 106 TPMSB0004EB 40 IN NT 10-9 E RR K AR 10-10 E OD 400 500 600 D 800 104 CU 10 8 6 103 4 102 2 101 1500 1 RISE T IME AN 10-12 300 GAIN 105 TIME (ns) 20 GA 10-8 10-11 TRAN SIT TIM E 1000 500 300 SUPPLY VOLTAGE (V) 1500 Figure 5: Typical EADCI (Equivalent Anode Dark Current Input) vs. Supply Voltage TPMSB0012EA 10-10 TPMSB0013EA 10-11 10-14 EADCI (lm) EQUIVALENT NOISE INPUT (W) 1000 SUPPLY VOLTAGE (V) Figure 4: Typical ENI vs. Wavelength 10-13 700 10-15 10-12 10-13 10-16 10-17 100 200 300 400 500 600 700 10-14 300 800 500 600 400 800 1000 1500 SUPPLY VOLTAGE (V) WAVELENGTH (nm) Data shown here, which is given from a relation among supply voltage, anode sensitivity and dark current, serves as a good reference in order to determine the most suitable supply voltage or its range. Figure 6: Typical Plateau Data for R4220P 80 70000 70 60000 60 SIGNAL+DARK 50 40000 40 30000 30 20000 10000 20 DARK 103 102 101 100 10 0 0 700 750 800 850 900 950 1000 1050 1100 1150 1200 SUPPLY VOLTAGE (V) 104 90 80000 50000 TPMSB0015EA 100 WAVELENGTH OF INCIDENT LIGHT: 450 (nm) TEMPERATURE : 25 (°C) DARK COUNTS (s-1) SIGNAL COUNTS (s-1) 90000 TPMSB0228EA DARK COUNTS (s-1) 100000 Figure 7: Typical Temperature Characteristics of Dark Count for R4220P 10-1 -20 0 +20 +40 TEMPERATURE (°C) +60 PHOTOMULTIPLIER TUBES R4220, R4220P (For Photon Counting) Figure 8: Dimensional Outline and Basing Diagram (Unit: mm) Figure 9: Socket E678-11A (Sold Separately) 28.5 ± 1.5 49 8 MIN. 38 PHOTOCATHODE DY5 5 DY6 6 7 DY2 33 8 DY8 3.5 80 MAX. DY7 DY3 3 94 MAX. 49.0 ± 2.5 24 MIN. DY4 4 9 DY9 2 5 10 P 1 11 K DY1 DIRECTION OF LIGHT 29 18 4 Bottom View (Basing Diagram) 32.2 ± 0.5 11 PIN BASE JEDEC No. B11-88 TACCA0064EA TPMSA0001EB Figure 10: D Type Socket Assembly E717-63 (Sold Separately) Figure 11: D Type Socket Assembly E717-74 (Sold Separately) HOUSING (INSULATOR) PMT 10 P DY7 C3 R9 C2 26.0±0.2 R8 C1 32.0±0.5 9 8 4 R6 DY5 5 DY4 4 7 6 R1 to R10 : 330 kΩ C1 to C3 : 10 nF R5 31.0 ± 0.5 DY3 A G 3 R3 DY2 POTTING COMPOUND ° 10 2 R2 DY1 K 22.4±0.2 DY8 8 DY7 7 DY6 6 DY5 5 R10 C3 R9 C2 R8 C1 R5 K 30° DY4 4 DY3 3 DY2 2 DY1 K 1 R3 4- 2.8 R2 R1 11 R1 -HV AWG22 (VIOLET) R1 to R10 : 330 kΩ C1 to C3 : 10 nF R4 0.7 R13 1 11 9 R6 R4 HOUSING (INSULATOR) DY9 R7 7 2.7 DY6 0.7 30.0 +0 -1 450 ± 10 R10 R7 29.0 ± 0.3 SIGNAL OUTPUT (A) GND (G) 10 14.0±0.5 DY8 49.0 ± 0.3 SOCKET PIN No. P 2 DY9 38.0 ± 0.3 SIGNAL GND SIGNAL OUTPUT RG-174/U(BLACK) POWER SUPPLY GND AWG22 (BLACK) 26.0±0.2 SOCKET PIN No. 32.0±0.5 PMT 3.5 33.0 ± 0.3 5 -HV (K) * "Wiring diagram at above applies when -HV is supplied." To supply +HV,connect the pin "G" to+HV, and the pin "K" to the GND. Refer to "(d) d-2" on page 87 for the connection method. TACCA0002EH TACCA0277EA * Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply. Warning–Personal Safety Hazards Electrical Shock–Operating voltages applied to this device present a shock hazard. WEB SITE www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Division 314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected] Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: [email protected] France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected] United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: [email protected] North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected] Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: [email protected] TPMS1003E03 APR. 2010. 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