Datasheet

PHOTOMULTIPLIER TUBE
R5984
New Electro-Optical Design
Wide Effective Area, High Sensitivity Multialkali Photocathode
185 nm to 900 nm, 28 mm (1-1/8 Inch) Diameter, 9-stage, Side-on Type
FEATURES
●New Electro-Optical Design Structure
●Wide Effective Area ................................... 10 mm × 24 mm
●High Cathode Sensitivity (Luminous) ..... 300 µA/lm
●High Anode Sensitivity (Luminous) ......... 3000 A/lm
●Basing Diagram is same as the R928
APPLICATIONS
●Spectroscopy
●Biomedical
●Environmental Monitoring
Figure 1: Typical Anode Uniformity
10 MIN.
SPECIFICATIONS
2.5 ± 0.5
2.5 ± 0.5
GENERAL
SUPPLY VOLTAGE : 1000 V
SPOT SIZE
: 0.5 mm
WAVELENGTH : 420 mm
CENTER OF
PHOTOCATHODE
100
RELATIVE SENSITIVITY (%)
Description/Value
Parameter
Unit
185 to 900
Spectral Response
nm
Wavelength of Maximum Response
400
nm
MateriaI
Multialkali
—
Photocathode
Minimum Effective Area
10 × 24
mm
Window Material
UV glass
—
Structure
Circular Cage
—
Dynode
Number of Stages
9
—
Direct
Anode to Last Dynode
4
pF
Interelectrode Anode to All Other
6
pF
Capacitances Electrodes
Base
11-pin base
—
Weight
Approx. 45
g
Operating Ambient Temperature
-30 to +50
°C
Storage Temperature
-30 to +50
°C
SuitabIe Socket
E678-11A (Sold Separately) —
E717-63 (Sold Separately)
SuitabIe Socket Assembly
—
E717-74 (Sold Separately)
80
* The center of the R5984
photocathode is slightly
laid out to the left side
from guide key, light
path should be adjusted
by 2.5 mm to the left
side from the guide key.
60
8 mm
40
20
0
8
7
6
5
4
3
2
1
0
1
2
3
4
DISTANCE FROM
GUIDE KEY (mm)
TPMSB0122EB
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.
PHOTOMULTIPLIER TUBE R5984
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Value
1250
250
0.1
Between Anode and Cathode
Between Anode and Last Dynode
Supply Voltage
Average Anode Current A
Unit
V
V
mA
CHARACTERISTlCS (at 25 °C)
Anode Sensitivity
Gain E
Anode Dark Current F (After 30 min Storage in Darkness)
ENI (Equivalent Noise Input) G
Anode Pulse Rise Time H
Time response
Electron Transit Time J
Light Hysteresis
Anode Current Stability K
Voltage Hysteresis
NOTES
A: Averaged over any interval of 30 seconds maximum.
B: The light source is a tungsten filament lamp operated at a distribution
temperature of 2856 K. Supply voltage is 100 V between the cathode
and all other electrodes connected together as anode.
C: The value is cathode output current when a blue filter(Corning CS 5-58
polished to 1/2 stock thickness) is interposed between the light source
and the tube under the same condition as Note B.
D: Red/White ratio is the quotient of the cathode current measured using a
red filter (Toshiba R-68) interposed between the light source and the tube
by the cathode current measured with the filter removed under the same
condition as Note B.
E: Measured with the same light source as Note B and with the anode-tocathode supply voltage and voltage distribution ratio shown in Table 1
below.
F: Measured with the same supply voltage and voltage distribution ratio as
Note E after removal of light.
G: ENI is an indication of the photon-limited signal-to-noise ratio. It refers to
the amount of light in watts to produce a signal-to-noise ratio of unity in
the output of a photomultiplier tube.
ENI =
where
2q.ldb.G. ∆f
S
q = Electronic charge (1.60 × 10-19 coulomb).
ldb = Anode dark current (after 30 minute storage) in amperes.
G = Gain.
∆f = Bandwidth of the system in hertz. 1 hertz is used.
S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response.
H: The rise time is the time for the output pulse to rise from 10 % to 90 % of
the peak amplitude when the whole photocathode is illuminated by a
delta function light pulse.
Min.
Typ.
Max
—
140
—
—
—
400
—
—
—
—
—
—
—
—
26
300
76
9
0.32
3000
7.6 × 105
1 × 107
5
1.7 × 10-16
2.2
22
0.1
1
—
—
—
—
—
—
—
—
50
—
—
—
—
—
Unit
%
µA/lm
mA/W
—
—
A/lm
A/W
—
nA
W
ns
ns
%
%
J: The electron transit time is the interval between the arrival of delta function
light pulse at the entrance window of the tube and the time when the anode
output reaches the peak amplitude. In measurement, the whole
photocathode is illuminated.
K: Hysteresis is temporary instability in anode current after light and voltage
are applied.
Hysteresis =
lmax. – lmin.
× 100 (%)
li
ANODE
CURRENT
Cathode Sensitivity
Parameter
Quantum Efficiency at 260 nm (Peak)
Luminous B
Radiant at 400 nm (Peak)
Blue Sensitivity Index (CS 5-58) C
Red/White Ratio D
Luminous E
Radiant at 400 nm
l max.
li
l min.
TIME
5
0
6
7 (minutes)
TPMSB0002EA
(1)Light Hysteresis
The tube is operated at 750 V with an anode current of 1 µA for 5 minutes.
The light is then removed from the tube for a minute. The tube is then
re-illuminated by the previous light level for a minute to measure the variation.
(2)Voltage Hysteresis
The tube is operated at 300 V with an anode current of 0.1 µA for 5 minutes.
The light is then removed from the tube and the supply voltage is quickly
increased to 800 V. After a minute, the supply voltage is then reduced to the
previous value and the tube is re-illuminated for a minute to measure the
variation.
Table 1: Voltage Distribution Ratio
Electrode
Distribution
Ratio
K
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9
1
1
1
1
1
SuppIy Voltage: 1000 V, K: Cathode,
1
1
1
Dy: Dynode,
1
P
1
P: Anode
Figure 2: Typical Spectral Response
Figure 3: Anode Luminous Sensitivity and Gain
Characteristics
TPMSB0163EA
105
108
QUANTUM
EFFICIENCY
CATHODE RADIANT
SENSITIVITY
1
0.1
WAVELENGTH (nm)
TPMSB0121EB
100
10
1
0.1
-20
-10
0
+10
+20
+30
TEMPERATURE (°C)
107
103
106
TYPICAL ANODE
SENSITIVITY
102
MINIMUM ANODE
SENSITIVITY
101
100
10-1
500
+40
+50
105
104
103
700
1000
SUPPLY VOLTAGE (V)
Figure 4: Typical Temperature Characteristics of Dark Current
(at 1000 V, after 30 min storage in darkness)
0.01
-30
104
102
1500
GAIN
10
0.01
100 200 300 400 500 600 700 800 900 1000
ANODE DARK CURRENT (nA)
TPMSB0003ED
TYPICAL GAIN
ANODE LUMINOUS SENSITIVITY (A/lm)
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
100
PHOTOMULTIPLIER TUBE R5984
Figure 5: Dimensional Outline and Basing Diagram (Unit: mm)
28.5 ± 1.5
Figure 6: Socket (Unit: mm)
Sold Separately
E678-11A
10 MIN.
49
2.5 ± 0.5
38
7
DY7
8 DY8
DY3 3
DY2
3.5
DY6
6
5
9 DY9
2
29
10 P
1
11
K
DY1
4
80 MAX.
5
DY4 4
94 MAX.
49.0 ± 2.5
24 MIN.
DY5
33
PHOTOCATHODE
18
DIRECTION OF LIGHT
Bottom View
(Basing Diagram)
32.2 ± 0.5
11 PIN BASE
JEDEC No. B11-88
TACCA0064EA
TPMSA0035EB
Figure 7: D Type Socket Assembly (Unit: mm) Sold Separately
E717-63
E717-74
HOUSING
(INSULATOR)
10
P
R10
9
DY8
8
R9
38.0 ± 0.3
49.0 ± 0.3
R8
DY7
7
DY6
6
26.0±0.2
DY5
5
DY4
4
C1
TOP VIEW
DY3
3
2
R4
HOUSING
(INSULATOR)
POTTING
COMPOUND
2
DY1
K
1
22.4±0.2
K
°
10
R2
30°
8
-HV
AWG22 (VIOLET)
DY7
7
DY6
6
DY5
5
DY4
4
DY3
3
DY2
2
DY1
K
1
C3
R9
C2
R8
C1
R6
R5
R1 to R10 : 330 kΩ
C1 to C3 : 10 nF
R3
0.7
R1
11
DY8
R10
R4
SIDE VIEW
R3
DY2
9
R7
7
A
G
2.7
31.0 ± 0.5
DY9
32.0±0.5
R1 to R10 : 330 kΩ
C1 to C3 : 10 nF
SIGNAL
OUTPUT (A)
GND (G)
10
C2
R5
0.7
30.0 +0
-1
4
R6
SOCKET
PIN No.
P
R7
29.0 ± 0.3
450 ± 10
C3
PMT
14.0±0.5
DY9
SIGNAL GND
SIGNAL OUTPUT
RG-174/U(BLACK)
POWER SUPPLY GND
AWG22 (BLACK)
26.0±0.2
SOCKET
PIN No.
32.0±0.5
PMT
3.5
33.0 ± 0.3
5
R2
R1
11
-HV (K)
4- 2.8
R13
* "Wiring diagram applies when -HV is supplied."
To supply +HV,connect the pin "G" to+HV, and the pin
"K" to the GND.
BOTTOM VIEW
TACCA0002EH
* Hamamatsu also provides C4900 series compact high voltage power
supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply.
TACCA0277EA
Warning–Personal Safety Hazards
Electrical Shock–Operating voltages applied to this
device present a shock hazard.
WEB SITE www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Electron Tube Division
314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: [email protected]
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected]
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North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected]
TPMS1033E03
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: [email protected]
JUL. 2006 IP
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