Datasheet

PHOTOMULTlPLlER TUBES
R636–10, R758–10
UV to Near IR (R636–10:185 to 930 nm, R758–10:160 to 930nm) Spectral Response
28mm(1-1/8 Inch) Diameter, GaAs(Cs) Photocathode, 9-stage,Side-On Type
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
MateriaI
Photocathode
Minimum Effective Area
Window Material
Structure
Dynode
Number of Stages
Anode to Last Dynode
Direct Interelectrode
Capacitances
Anode to All Other Electrodes
Base
SuitabIe Socket
R636–10
185 to 930
R758–10
160 to 930
300 to 800
GaAs (Cs)
3 12
UV glass
Fused silica glass
Circular–cage
9
4
6
JEDEC No.B11–88
E678–11A(option)
Unit
nm
nm
mm
pF
pF
MAXIMUM RATINGS (Absolute Maximum Values)
Supply Voltage
Parameter
Between Anode and Cathode
Between Anode and Last Dynode
Average Anode Current
CHARACTERISTlCS (at 25
)
Parameter
Luminous(2856K)
Cathode Sensitivity
Min.
400
at 350nm
at 632.8nm
at 852.1nm
Red/White Ratio (with R–68 filter)
Radiant
Gain
Luminous(2856K)
Anode Sensitivity
Radiant
Unit
Vdc
Vdc
mA
Value
1500
250
0.001
100
at 350nm
at 632.8nm
at 852.1nm
Typ.
550
62
63
48
0.53
4.5 105
250
2.8 104
2.8 104
2.2 104
0.1
2
20
Anode Dark Current at 10A/lm
Anode Pulse Rise Time
Time Response
Electron Transit Time
After 30min. storage in darkness
NOTE: Anode characteristics are measured with the voItage distribution ratio shown below.
Max.
Unit
A/lm
mA/W
A/lm
A/W
2
nA
ns
ns
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE
K
Dy1
Dy2
Dy3
Dy4
Dy5
Dy6
Dy7
Dy8
Dy9
Electrodes
Ratio
1
1
1
1
1
1
1
1
1
1
SuppIy Voltage : 1250Vdc,
K : Cathode, Dy : Dynode,
P : Anode
P
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
lnformation furnished by HAMAMATS U is believed to be reliabIe. However, no responsibility is assumed for possibIe inaccuracies or ommissions. Specifications are
subject to change without notice. No patent right are granted to any of the circuits described herein. © 1994 Hamamatsu Photonics K.K.
PHOTOMULTlPLlER TUBES R636–10, R758–10
Figure 1: Typical Spectral Response
TPMSB0069EA
103
CATHODE RADIANT SENSITIVITY(mA/W)
QUANTUM EFFICIENCY(%)
R636-10
YP
102
R758-10
QUANTUM
EFFICIENCY
1
0.1
S
400
600
800
MI
DE
105
IN
(T
GA
100
104
10-1
103
10-2
102
10-3
500
1000
.)
YP
LU
O
AN
106
SE
U
NO
101
TY
(T
VI
TI
I
NS
0.01
200
107
.)
CATHODE
RADIANT
SENSITIVITY
R636-10
10
TPMSB0070EB
WAVELENGTH(nm)
700
GAIN
R758-10
ANODE LUMINOUS SENSITIVITY(A/lm)
100
Figure 2: Typical Anode Sensitivity and
Typical Gain
101
1500
1000
SUPPLY VOLTAGE(V)
Figure 3: Dimensional Outline and Basing Diagram (Unit : mm)
Socket
29.0 1.7
(E678 – 11A)
8MIN.
3MIN.
49
PHOTOCATHODE
38
5
DY6
6
7
94MAX.
DY2
33
3.5
8 DY8
9 DY9
2
10 P
1
5
11
K
DY1
DIRECTION
OF LIGHT
BOTTOM VIEW
(BASING DIAGRAM)
29
4
2.5
DY7
DY3 3
49.0
80MAX.
DY4 4
12MIN.
16MIN.
DY5
34MAX.
18
TPMSA0027EC
HA COATING
11 PIN BASE
JEDEC No. B11-88
TACCA0008EA
HAMAMATSU PHOTONICS K.K., Electoron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384
North Europe: Hamamatsu Photonics Norden AB: Färögatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95
Italy: Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)2-935 81 733, Fax: (39)2-935 81 741
TPMS1016E03
JUN. 1994
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