Datasheet

PHOTOMULTIPLIER TUBE
R7154
High Sensitivity Solar Blind Photocathode (160 nm to 320 nm)
28 mm (1-1/8 Inch) Diameter, 9-stage, Side-on Type
FEATURES
●Spectral Response .................................. 160 nm to 320 nm
●Cathode Sensitivity
Radiant at 254 nm ..................................... 62 mA/W Typ.
Quantum Efficiency at 254 nm ........................ 30 % Typ.
●Anode Sensitivity (at 1000 V)
Radiant at 254 nm ............................ 6.2 × 105 A/W Typ.
APPLICATIONS
●Emission Spectroscopy
●UV Spectrophotometers
SPECIFICATIONS
Figure 1: Typical Spectral Response
Parameter
Description/Value
160 to 320
Spectral Response*
230
Wavelength of Maximum Response
MateriaI
Cs-Te
Photocathode
Minimum Effective Area
8 × 24
Quartz
Window Material
Secondary Emitting Surface
Sb-Cs
Structure
Circular-cage
Dynode
Number of Stages
9
4
Direct Interelectrode Anode to Last Dynode
6
Anode to All Other Electrodes
Capacitances
Base
11-pin base JEDEC No. B11-88
Weight
Approx. 45
Operating Ambient Temperature
-30 to +50
Storage Temperature
-30 to +50
SuitabIe Socket
E678–11A (Sold Separately)
E717–63 (Sold Separately)
SuitabIe Socket Assembly
E717–74 (Sold Separately)
* Operate in a nitrogen-purged environment for VUV detection.
Unit
nm
nm
—
mm
—
—
—
—
pF
pF
—
g
°C
°C
—
TPMSB0128EA
100
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
GENERAL
CATHODE RADIANT
SENSITIVITY
10
1
QUANTUM
EFFICIENCY
0.1
—
0.01
100
200
300
400
WAVELENGTH (nm)
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Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2010 Hamamatsu Photonics K.K.
500
PHOTOMULTIPLIER TUBES R7154
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Between Anode and Cathode
Supply Voltage
Between Anode and Last Dynode
Average Anode Current A
Unit
V
V
mA
Value
1250
250
0.1
CHARACTERISTlCS (at 25 °C)
Parameter
Quantum Efficiency at 254 nm
Radiant
at 254 nm
Radiant
at 254 nm
Cathode Sensitivity
Min.
—
—
1.0 × 105
—
—
—
—
—
—
—
—
Anode Sensitivity
Gain
Anode Dark Current F (After 30 min Storage in Darkness)
ENI (Equivalent Noise Input) G
Anode Pulse Rise Time H
E
Time Response
Electron Transit Time I
Transit Time Spread (TTS) J
Light Hysteresis
Anode Current Stability K
Voltage Hysteresis
Max.
—
—
—
—
10
—
—
—
—
—
—
Typ.
30
62
6.2 × 105
1.0 × 107
1
9.1 × 10-17
2.2
22
1.2
0.1
1.0
Unit
%
mA/W
A/W
—
nA
W
ns
ns
ns
%
%
NOTES
Table 1: Voltage Distribution Ratio
Electrode
K
Distribution
Ratio
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9
1
1
1
1
1
1
1
1
1
P
Dy: Dynode,
F: Measured with the same supply voltage and voltage distribution ratio as
Note E after removal of light.
G:ENI is an indication of the photon-limited signal-to-noise ratio. It refers to
the amount of light in watts to produce a signal-to-noise ratio of unity in
the output of a photomultiplier tube.
2q.ldb.G.∆f
S
where
q = Electronic charge (1.60 × 10-19 coulomb).
ldb = Anode dark current (after 30 minute storage) in amperes.
G = Gain.
∆f = Bandwidth of the system in hertz. 1 hertz is used.
S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response.
l min.
TIME
0
1
P: Anode
l max.
li
Hysteresis =
SuppIy Voltage: 1000 V, K: Cathode,
ENI =
H: The rise time is the time for the output pulse to rise from 10 % to 90 % of the
peak amplitude when the entire photocathode is illuminated by a delta
function light pulse.
I: The electron transit time is the interval between the arrival of delta function
light pulse at the entrance window of the tube and the time when the anode
output reaches the peak amplitude. In measurement, the whole photocathode
is illuminated.
J: Also called transit time jitter. This is the fluctuation in electron transit time
between individual pulses in the signal photoelectron mode, and may be
defined as the FWHM of the frequency distribution of electron transit times.
K: Hysteresis is temporary instability in anode current after light and voltage are
applied.
ANODE
CURRENT
A: Averaged over any interval of 30 seconds maximum.
B: The light source is a tungsten filament lamp operated at a distribution
temperature of 2856K. Supply voltage is 100 V between the cathode
and all other electrodes connected together as anode.
C: Red/White ratio is the quotient of the cathode current measured using
a red filter (Toshiba R-68) interposed between the light source and the
tube by the cathode current measured with the filter removed under the
same conditions as Note B.
D: The value is cathode output current when a blue filter (Corning CS 5-58
polished to 1/2 stock thickness) is interposed between the light source
and the tube under the same condition as Note B.
E: Measured with the same light source as Note B and with the voltage
distribution ratio shown in Table 1 below.
5
6
7 (minutes)
lmax.
lmin.
li
TPMSB0002EA
× 100 (%)
(1) Light Hysteresis
The tube is operated at 750 V with an anode current of 1 µA for 5 minutes.
The light is then removed from the tube for a minute. The tube is then
re-illuminated by the previous light level for a minute to measure the variation.
(2) Voltage Hysteresis
The tube is operated at 300 V with an anode current of 0.1 µA for 5 minutes.
The light is then removed from the tube and the supply voltage is quickly
increased to 800 V. After a minute, the supply voltage is then reduced to the
previous value and the tube is re-illuminated for a minute to measure the
variation.
Figure 2: Anode Radiant Sensitivity and Gain
Characteristcs
108
TPMSB0129EB
Figure 3: Typical Time Response
108
100
TPMSB0004EC
80
60
107
107
40
TRANS
IT TIME
106
105
105
TYPICAL ANODE
SENSITIVITY
10
8
6
104
104
4
MINIMUM ANODE
SENSITIVITY
103
102
500
20
TIME (ns)
106
GAIN
ANODE RADIANT SENSITIVITY (A/IW)
TYPICAL GAIN
RISE T
IME
103
700
1000
SUPPLY VOLTAGE (V)
102
1500
2
1
500
700
1000
SUPPLY VOLTAGE (V)
1500
PHOTOMULTIPLIER TUBES R7154
Figure 4: Dimensional Outline and Basing Diagram (Unit: mm)
Figure 5: Socket (Unit: mm)
E678-11A
28.5 ± 1.5
49
8 MIN.
T9 BULB
Sold Separately
38
5
DY6
6
7
DY2
3.5
8 DY8
5
9 DY9
2
10 P
1
11
29
K
DY1
DIRECTION OF LIGHT
18
80 MAX.
DY7
DY3 3
94 MAX.
49.0 ± 0.25
24 MIN.
DY4 4
4
DY5
33
PHOTOCATHODE
Bottom View
(Basing Diagram)
32.2 ± 0.5
11 PIN BASE
JEDEC No.B11-88
TACCA0064EA
TPMSA0005EB
Figure 6: D Type Socket Assembly (Unit: mm) Sold Separately
E717-63
E717-74
HOUSING
(INSULATOR)
10
P
R10
9
DY8
8
DY7
C2
R8
C1
26.0±0.2
7
4
R6
5
R1 to R10 : 330 kΩ
C1 to C3 : 10 nF
DY4
A
G
2.7
0.7
R5
31.0 ± 0.5
4
R4
HOUSING
(INSULATOR)
POTTING
COMPOUND
DY3
3
2
DY1
K
1
°
10
R2
22.4±0.2
K
8
30°
C3
R9
C2
R8
C1
7
DY6
6
DY5
5
R6
R5
DY4
4
DY3
3
DY2
2
DY1
K
1
R1 to R10 : 330 kΩ
C1 to C3 : 10 nF
R4
R3
0.7
R1
11
DY8
R10
R7
SIDE VIEW
R3
DY2
9
DY7
TOP VIEW
2
6
DY9
32.0±0.5
7
DY6
DY5
30.0 +0
-1
R9
SIGNAL
OUTPUT (A)
GND (G)
10
R7
29.0 ± 0.3
450 ± 10
C3
SOCKET
PIN No.
P
14.0±0.5
38.0 ± 0.3
49.0 ± 0.3
DY9
PMT
SIGNAL GND
SIGNAL OUTPUT
RG-174/U(BLACK)
POWER SUPPLY GND
AWG22 (BLACK)
26.0±0.2
SOCKET
PIN No.
32.0±0.5
PMT
3.5
33.0 ± 0.3
5
R2
R1
11
-HV
AWG22 (VIOLET)
-HV (K)
4- 2.8
R13
* "Wiring diagram applies when -HV is supplied."
To supply +HV,connect the pin "G" to+HV, and the pin
"K" to the GND.
BOTTOM VIEW
TACCA0002EH
TACCA0277EA
* Hamamatsu also provides C4900 series compact high voltage power
supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply.
Warning–Personal Safety Hazards
Electrical Shock–Operating voltages applied to this
device present a shock hazard.
HAMAMATSU PHOTONICS K.K.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Electron Tube Division
314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: [email protected]
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: [email protected]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected]
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: [email protected]
TPMS1036E03
DEC. 2010. IP
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