Datasheet

PHOTOMULTIPLIER TUBES
R7518
R7518P (For Photon Counting)
High Sensitivity with Low Noise Photocathode
FEATURES
●Spectral Response .................................. 185 nm to 730 nm
●High Cathode Sensitivity
Luminous ......................................................... 130 µA/lm
Radiant at 410 nm ............................................. 85 mA/W
●High Anode Sensitivity (at 1000 V)
Luminous ......................................................... 1560 A/lm
Radiant at 410 nm ..................................... 10.2 × 105 A/W
●Low Dark Current ....................................................... 0.2 nA
●Low Dark Counts (R7518P) ......................................... 10 s-1
APPLICATIONS
●Chemiluminescence Detection
●Bioluminescence Detection
●Fluorescence Spectrometer
●SO2 Monitor (UV Fluorescence)
SPECIFICATIONS
Figure 1: Typical Spectral Response
TPMSB0177EA
GENERAL
Base
Weight
Operating Ambient Temperature
Storage Temperature
SuitabIe Socket
SuitabIe Socket Assembly
Description / Value Unit
185 to 730
410
nm
nm
Low noise bialkali
8 × 24
UV glass
—
mm
—
Low noise bialkali
Circular-cage
9
—
—
—
4
6
11-pin base
JEDEC No. B11-88
45
-30 to +50
-30 to +50
E678–11A (Sold Separately)
E717–63 (Sold Separately)
E717-74 (Sold Separately)
pF
pF
—
g
°C
°C
—
—
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
Parameter
Spectral Response
Wavelength of Maximum Response
Photocathode
MateriaI
Minimum Effective Area
Window Material
Dynode
Secondary Emitting Surface
Structure
Number of Stages
Direct Interelectrode Capacitances
Anode to Last Dynode
Anode to All Other Electrode
100
10
CATHODE
RADIANT
SENSITIVITY
QUANTUM
EFFICIENCY
1
0.1
0.01
100
200
300
400
500
600
700
800
WAVELENGTH (nm)
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2010 Hamamatsu Photonics K.K.
PHOTOMULTIPLIER TUBES
R7518, R7518P (For Photon Counting)
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Supply Voltage
Between Anode and Cathode
Between Anode and Last Dynode
Average Anode Current A
CHARACTERISTlCS (at 25 °C)
Parameter
Cathode Sensitivity
Quantum Efficiency (at peak wavelength)
Luminous B
Radiant (at peak wavelength)
Blue Sensitivity Index (CS 5-58)
Anode Sensitivity
Luminous C
Radiant at 400 nm
Gain D
Anode Dark Current E
After 30 min Storage in darkness
Anode Dark Counts E
ENI (Equivalent Noise Input) F
Time Response D
Anode Pulse Rise Time G
Electron Transit Time
Transit Time Spread (TTS) H
Anode Current Stability J
Light Hysteresis
Voltage Hysteresis
Value
Unit
1250
250
0.1
V
V
mA
R7518
for General Purpose
Typ.
Max.
Min.
R7518P
for Photon Counting
Min.
Typ.
Max.
Unit
—
120
—
—
—
—
—
—
—
120
—
—
29
130
85
10
—
—
—
—
%
µA/lm
mA/W
—
1200
1560
— 10.2 × 105
—
1.2 × 107
—
—
—
1200
1560
— 10.2 × 105
—
1.2 × 107
—
—
—
A/lm
A/W
—
—
—
—
0.2
—
2.7 × 10-17
2.0
—
—
—
—
—
0.2
10
2.7 × 10-17
0.5
50
—
nA
s-1
W
—
—
—
2.2
22
1.2
—
—
—
—
—
—
2.2
22
1.2
—
—
—
ns
ns
ns
—
—
0.1
1.0
—
—
—
—
0.1
1.0
—
—
%
%
29
130
85
10
NOTES
2q.ldb.G. f
(W)
S
where q = Electronic charge. (1.60 × 10-19 coulomb)
ldb = Anode dark current(after 30 minute storage) in amperes.
G = Gain.
f = Bandwidth of the system in hertz. (usually 1 hertz)
S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response
ENI =
G:The rise time is the time for the output pulse to rise from 10% to 90% of the
peak amplitude when the entire photocathode is illuminated by a delta
function light pulse.
H: The electron transit time is the interval between the arrival of delta function
light pulse at the entrance window of the tube and the time when the anode
output reaches the peak amplitude. In measurement, the whole photocathode is illuminated.
J: Also called transit time jitter. This is the fluctuation in electron transit time
between individual pulses in the signal photoelectron mode, and may be
defined as the FWHM of the frequency distribution of electron transit times.
K: Hysteresis is temporary instability in anode current after light and voltage
are applied.
lmax.
Hysteresis =
lmin.
100 (%)
li
ANODE
CURRENT
A: Averaged over any interval of 30 seconds maximum.
B: The light source is a tungsten filament lamp operated at a distribution temperature of 2856 K. Supply voltage is 150 V between the cathode and all
other electrodes connected together as anode.
C: Measured with the same light source as Note B and with the anode-tocathode supply voltage and voltage distribution ratio shown in Table 1 below.
D: Measured with the same supply voltage and voltage distribution ratio as
Note E after removal of light.
E: Measured at the plateau voltage.
F: ENI is an indication of the photon-limited signal-to-noise ratio. It refers to
the amount of light in watts to produce a signal-to-noise ratio of unity in the
output of a photomultiplier tube.
l max.
li
l min.
TIME
5
0
6
7 (minutes)
TPMSB0002EA
(1)Current Hysteresis
The tube is operated at 750 V with an anode current of 1 µA for 5 minutes.
The light is then removed from the tube for a minute. The tube is then
re-illuminated by the previous light level for a minute to measure the variation.
(2)Voltage Hysteresis
The tube is operated at 300 V with an anode current of 0.1 µA for 5 minutes.
The light is then removed from the tube and the supply voltage is quickly
increased to 800 V. After a minute, the supply voltage is then reduced to
the previous value and the tube is re-illuminated for a minute to measure
the variation.
Table 1:Voltage Distribution Ratio
Electrodes
Distribution
Ratio
K
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9
1
1
1
1
1
1
1
1
1
P
1
SuppIy Voltage : 1000 V, K: Cathode, Dy: Dynode, P: Anode
Figure 2: Typical Gain and Anode Dark Current
TPMSB0011EA
108
10-6
107
10-7
106
100
80
60
TPMSB0004EB
40
10-9
10-10
E
OD
AN
400
600
500
RK
DA
800
T
EN
RR
U
C
104
TIME (ns)
105
10-12
300
10
8
6
103
4
102
2
101
1500
1
RISE T
IME
1000
500
300
SUPPLY VOLTAGE (V)
1000
1500
Figure 5: Typical EADCI (Equivalent Anode Dark
Current Input) vs. Supply Voltage
TPMSB0178EA
10-10
10-14
TPMSB0233EA
10-11
EADCI (lm)
EQUIVALENT NOISE INPUT (W)
700
SUPPLY VOLTAGE (V)
Figure 4: Typical ENI vs. Wavelength
10-13
E
20
10-8
10-11
TRAN
SIT TIM
IN
GA
GAIN
ANODE DARK CURRENT (A)
10-5
Figure 3: Typical Time Response
10-15
10-16
10-12
10-13
10-17
100
200
300
400
500
600
700
10-14
300
800
400
WAVELENGTH (nm)
500
600
800
1000 1200
SUPPLY VOLTAGE (V)
Data shown here, which is given from a relation among supply voltage,
anode sensitivity and dark current, serves as a good reference in order
to determine the most suitable supply voltage or its range.
Figure 6: Typical Plateau Data for R7518
TPMSB0229EA
100
80000
80
70000
70
60000
50000
60
SIGNAL+DARK
50
40000
40
30000
30
20000
10000
20
DARK
103
102
101
100
10
0
0
700 750 800 850 900 950 1000 1050 1100 1150 1200
SUPPLY VOLTAGE (V)
TPMSB0015EB
90
DARK COUNTS (s-1)
SIGNAL COUNTS (s-1)
WAVELENGTH OF INCIDENT LIGHT: 450 (nm)
TEMPERATURE
: 25 (°C)
104
DARK COUNTS (s-1)
100000
90000
Figure 7: Typical Temperature Characteristics
of Dark Count for R7518P
10-1
-20
0
+20
TEMPERATURE (°C)
+40
+50
PHOTOMULTIPLIER TUBES
R7518, R7518P (For Photon Counting)
Figure 7: Dimensional Outline and Basing Diagram (Unit: mm)
Figure 8: Socket E678-11A (Sold Separately)
28.5 ± 1.5
49
8 MIN.
38
PHOTOCATHODE
DY5
5
DY6
6
7
DY2
33
8 DY8
3.5
80 MAX.
DY7
DY3 3
94 MAX.
49.0 ± 2.5
24 MIN.
DY4 4
9 DY9
2
5
10 P
1
11
K
DY1
DIRECTION OF LIGHT
29
18
4
Bottom View
(Basing Diagram)
32.2 ± 0.5
11 PIN BASE
JEDEC No. B11-88
TACCA0064EA
TPMSA0001EB
Figure 9: D Type Socket Assembly E717-63 (Sold Separately)
PMT
10
DY7
C3
R9
C2
26.0±0.2
R8
C1
32.0±0.5
9
8
4
R6
DY5
5
DY4
4
7
6
R1 to R10 : 330 kΩ
C1 to C3 : 10 nF
R5
31.0 ± 0.5
DY3
A
G
3
R3
DY2
POTTING
COMPOUND
°
10
2
R2
DY1
K
22.4±0.2
DY8
8
DY7
7
DY6
6
DY5
5
R10
C3
R9
C2
R8
C1
R5
K
30°
DY4
4
DY3
3
DY2
2
DY1
K
1
R3
4- 2.8
R2
R1
11
R1
-HV
AWG22 (VIOLET)
R1 to R10 : 330 kΩ
C1 to C3 : 10 nF
R4
0.7
R13
1
11
9
R6
R4
HOUSING
(INSULATOR)
DY9
R7
7
2.7
DY6
0.7
30.0 +0
-1
450 ± 10
R10
R7
29.0 ± 0.3
SIGNAL
OUTPUT (A)
GND (G)
10
14.0±0.5
DY8
49.0 ± 0.3
SOCKET
PIN No.
P
2
DY9
SIGNAL GND
SIGNAL OUTPUT
RG-174/U(BLACK)
POWER SUPPLY GND
AWG22 (BLACK)
26.0±0.2
SOCKET
PIN No.
P
38.0 ± 0.3
HOUSING
(INSULATOR)
32.0±0.5
PMT
3.5
33.0 ± 0.3
5
Figure 10: D Type Socket Assembly E717-74 (Sold Separately)
-HV (K)
* "Wiring diagram at above applies when -HV is supplied." To supply +HV,connect the pin "G" to+HV, and
the pin "K" to the GND. Refer to "(d) d-2" on page 87
for the connection method.
TACCA0002EH
TACCA0277EA
* Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series
DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply.
Warning–Personal Safety Hazards
Electrical Shock–Operating voltages applied to this
device present a shock hazard.
WEB SITE www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Electron Tube Division
314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: [email protected]
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: [email protected]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected]
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: [email protected]
TPMS1060E03
MAY 2010. IP
Similar pages