Transistors with built-in Resistor UNR2154 (UN2154) Silicon PNP epitaxial planer transistor Unit: mm +0.2 2.8 –0.3 For digital circuits 1.45 0.95 1 3 +0.1 0.4 –0.05 +0.2 1.9±0.2 (Ta=25˚C) +0.1 0.16 –0.06 0.8 1.1 –0.1 0.1 to 0.3 0.4±0.2 Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage VCEO –30 V Collector current IC –100 mA Total power dissipation PT 200 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C 1:Base 2:Emitter 3:Collector 0 to 0.1 ■ Absolute Maximum Ratings 0.65±0.15 2 +0.2 ● High forward current transfer ratio hFE. Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 1.5 –0.05 0.95 ● 2.9 –0.05 ■ Features ● +0.25 0.65±0.15 EIAJ:SC-59 Mini Type Package Marking Symbol: EV Internal Connection C R1(10kΩ) B R2 (47kΩ) E ■ Electrical Characteristics Parameter (Ta=25˚C) Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = –10µA, IE = 0 –30 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –30 V ICBO VCB = –30V, IE = 0 – 0.1 µA ICEO VCE = –30V, IB = 0 – 0.5 µA Emitter cutoff current IEBO VEB = –3V, IC = 0 – 0.1 mA Forward current transfer ratio hFE VCE = –10V, IC = –5mA Collector to emitter saturation voltage VCE(sat) IC = –50mA, IB = – 0.33mA Output voltage high level VOH VCC = –5V, VB = – 0.5V, RL = 1kΩ Output voltage low level VOL VCC = –5V, VB = –2.5V, RL = 1kΩ Input resistance R1 Collector cutoff current Resistance ratio R1/R2 Transition frequency fT 80 – 0.5 –1.2 –4.9 –30% VCB = –10V, IE = 1mA, f = 200MHz — V V 10 – 0.2 V +30% kΩ 0.213 — 80 MHz Note) The part number in the parenthesis shows conventional part number. 1 Transistors with built-in Resistor UNR2154 PT — Ta IC — VCE IB=–1.0mA Collector current IC (mA) Total power dissipation PT (mW) –175 200 150 100 50 –0.9mA –0.8mA –150 –0.7mA –0.6mA –125 –0.5mA –100 –0.4mA –75 –0.3mA –50 –0.2mA –25 –0.1mA 0 0 0 20 40 60 0 80 100 120 140 160 –2 hFE — IC 250 25˚C 200 –25˚C 150 100 50 –10 –100 –1000 Collector current IC (mA) VO=–0.2V Ta=25˚C –10 –1 –0.1 –1 –10 25˚C Ta=75˚C –0.1 –25˚C –0.01 –1 –12 –10 –10 Output current IO (mA) f=1MHz IE=0 Ta=25˚C 5 –100 –100 –1000 Collector current IC (mA) IO — VIN 4 3 2 –10000 VO=–5V Ta=25˚C –1000 –100 –10 1 0 –1 –10 –100 Collector to base voltage VCB (V) VIN — IO –100 –8 Output current IO (µA) Forward current transfer ratio hFE VCE=–10V Collector output capacitance Cob (pF) 6 Ta=75˚C –0.01 –0.1 –6 –1 Cob — VCB 300 0 –1 –4 IC/IB=10 –10 Collector to emitter voltage VCE (V) Ambient temperature Ta (˚C) Input voltage VIN (V) Collector to emitter saturation voltage VCE(sat) (V) –100 Ta=25˚C 2 VCE(sat) — IC –200 250 –1 –0.4 –0.6 –0.8 –1 –1.2 Input voltage VIN (V) –1.4 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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