Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D114
PZM-NA series
Voltage regulator double diodes
Product specification
Supersedes data of 1999 Jun 02
1999 Jun 11
Philips Semiconductors
Product specification
Voltage regulator double diodes
PZM-NA series
PINNING
FEATURES
• Total power dissipation: max. 220 mW per diode
PIN
DESCRIPTION
• Small plastic package suitable for surface mounted
design
1
cathode
2
cathode
• Working voltage: nom. 2.4 V and 15 V (E24 range).
3
anode
APPLICATIONS
handbook, halfpage
• General regulation functions.
3
3
DESCRIPTION
Low power general purpose voltage regulator double
diodes in a SOT346 (SC59) plastic package, suitable for
surface mounted design.
1
1
2
2
MAM407
Top view
Fig.1
Simplified outline (SOT346; SC59) and
symbol.
MARKING
TYPE NUMBER
MARKING CODE
TYPE NUMBER
MARKING CODE
PZM2.4NBA
2A4
PZM6.2NB2A
6A2
PZM2.7NB2A
2A7
PZM6.8NB2A
6A8
PZM3.0NB2A
3A0
PZM7.5NB2A
7A5
PZM3.3NB2A
3A3
PZM8.2NB2A
8A2
PZM3.6NB2A
3A6
PZM9.1NB2A
9A1
PZM3.9NB2A
3A9
PZM10NB2A
10A
PZM4.3NB2A
4A3
PZM11NB2A
11A
PZM4.7NB2A
4A7
PZM12NB2A
12A
PZM5.1NB2A
5A1
PZM13NB2A
13A
PZM5.6NB2A
5A6
PZM15NB2A
15A
1999 Jun 11
2
Philips Semiconductors
Product specification
Voltage regulator double diodes
PZM-NA series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
−
IF
continuous forward current
IZSM
non-repetitive peak current
tp = 100 µs; square wave
P
power dissipation; see note 1
Tamb = 25 °C
−
220
mW
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
150
°C
200
mA
see Table 1
Note
1. Device mounted on an FR4 printed circuit board with Cu clad 5 × 5 mm.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
one diode loaded; note 1
350
K/W
Rth j-a
thermal resistance from junction to ambient
one diode loaded; note 2
560
K/W
Notes
1. Solderpoint of cathode tab.
2. Device mounted on an FR4 printed circuit board with Cu clad 5 × 5 mm.
1999 Jun 11
3
Philips Semiconductors
Product specification
Voltage regulator double diodes
PZM-NA series
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
1999 Jun 11
CONDITIONS
MAX.
UNIT
IF = 10 mA; see Fig.2
0.9
V
IF = 100 mA; see Fig.2
1.1
V
PZM2.4NBA
VR = 1 V
50
µA
PZM2.7NB2A
VR = 1 V
20
µA
PZM3.0NB2A
VR = 1 V
10
µA
PZM3.3NB2A
VR = 1 V
5
µA
PZM3.6NB2A
VR = 1 V
5
µA
PZM3.9NB2A
VR = 1 V
3
µA
PZM4.3NB2A
VR = 1 V
3
µA
PZM4.7NB2A
VR = 1 V
3
µA
PZM5.1NB2A
VR = 1.5 V
3
µA
PZM5.6NB2A
VR = 2.5 V
2
µA
PZM6.2NB2A
VR = 3.0 V
2
µA
PZM6.8NB2A
VR = 3.5 V
2
µA
PZM7.5NB2A
VR = 4.0 V
1
µA
PZM8.2NB2A
VR = 5.0 V
700
nA
PZM9.1NB2A
VR = 6.0 V
500
nA
PZM10NB2A
VR = 7.0 V
200
nA
PZM11NB2A
VR = 8.0 V
100
nA
PZM12NB2A
VR = 9.0 V
100
nA
PZM13NB2A
VR = 10.0 V
100
nA
PZM15NB2A
VR = 11.0 V
70
nA
4
Philips Semiconductors
Product specification
Voltage regulator double diodes
PZM-NA series
Table 1 Per type; PZM2.4N to PZM24N
Tj = 25 °C unless otherwise specified.
PZM
-XXX
WORKING
VOLTAGE VZ (V)
at IZ = 5 mA;
tm = 40 ms;
Tamb = 25 °C
DIFFERENTIAL RESISTANCE
rdif (Ω)
IZ = 1 mA
IZ = 5 mA
TEMP.
COEFF.
SZ (mV/K)
at
IZ = 5 mA
DIODE
CAP.
Cd (pF)
at
f = 1 MHz;
VR = 0
NON-REPETITIVE
PEAK REVERSE
CURRENT
IZSM (A)
at tp = 100 µs
TYP.
MAX.
MAX.
MIN.
MAX.
TYP.
MAX.
TYP.
MAX.
2.4NBA
2.30
2.60
275
400
70
100
−1.6
450
8.00
2.7NB2A
2.65
2.90
300
450
75
100
−2.0
440
8.00
3.0NB2A
2.95
3.20
325
500
80
95
−2.1
425
8.00
3.3NB2A
3.25
3.50
350
500
85
95
−2.4
410
8.00
3.6NB2A
3.55
3.80
375
500
85
90
−2.4
390
8.00
3.9NB2A
3.87
4.10
400
500
85
90
−2.5
370
8.00
4.3NB2A
4.15
4.34
410
600
80
90
−2.5
350
8.00
4.7NB2A
4.55
4.75
425
500
50
80
−1.4
325
8.00
5.1NB2A
4.98
5.20
400
480
40
60
−0.8
300
8.00
5.6NB2A
5.49
5.73
80
400
15
40
1.2
275
8.00
6.2NB2A
6.06
6.33
40
150
6
10
2.3
250
8.00
6.8NB2A
6.65
6.93
30
80
6
15
3.0
215
8.00
7.5NB2A
7.28
7.60
15
80
2
10
4.0
170
3.50
8.2NB2A
8.02
8.36
20
80
2
10
4.6
150
3.50
9.1NB2A
8.85
9.23
20
100
2
10
5.5
120
3.50
10NB2A
9.77
10.21
20
150
2
10
6.4
110
3.50
11NB2A
10.76
11.22
25
150
2
10
7.4
110
3.00
12NB2A
11.74
12.24
25
150
2
10
8.4
105
3.00
13NB2A
12.91
13.49
25
170
2
10
9.4
105
2.50
15NB2A
14.34
14.98
25
200
3
15
11.4
100
2.00
1999 Jun 11
5
Philips Semiconductors
Product specification
Voltage regulator double diodes
PZM-NA series
GRAPHICAL DATA
MBG781
MBG783
300
0
handbook, halfpage
handbook, halfpage
IF
(mA)
SZ
(mV/K)
4V3
−1
200
3V9
3V6
−2
100
3V3
3V0
2V4
2V7
0
0.6
0.8
VF (V)
−3
1.0
0
20
Tj = 25 °C.
PZM2.4NBA to PZM4.3NB2A.
Tj = 25 °C to 150 °C.
Fig.2
Fig.3
Forward current as a function of forward
voltage; typical values.
40
handbook, halfpage
12
11
P
(mW)
10
9V1
5
200
8V2
7V5
6V8
6V2
5V6
5V1
0
100
4V7
−5
MDA988
300
SZ
(mV/K)
60
Temperature coefficient as a function of
working current; typical values.
MBG782
10
handbook, halfpage
IZ (mA)
0
4
8
12
16
IZ (mA)
0
20
0
50
100
200
150
Tamb (°C)
PZM4.7NB2A to PZM12NB2A.
Tj = 25 °C to 150 °C.
Fig.4
Temperature coefficient as a function of
working current; typical values.
1999 Jun 11
Fig.5 Power derating curve per diode.
6
Philips Semiconductors
Product specification
Voltage regulator double diodes
PZM-NA series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT346
E
D
A
B
X
HE
v M A
3
Q
A
A1
1
c
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.3
1.0
0.1
0.013
0.50
0.35
0.26
0.10
3.1
2.7
1.7
1.3
1.9
0.95
3.0
2.5
0.6
0.2
0.33
0.23
0.2
0.2
OUTLINE
VERSION
SOT346
1999 Jun 11
REFERENCES
IEC
JEDEC
EIAJ
TO-236
SC-59
7
EUROPEAN
PROJECTION
ISSUE DATE
98-07-17
Philips Semiconductors
Product specification
Voltage regulator double diodes
PZM-NA series
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Jun 11
8
Philips Semiconductors
Product specification
Voltage regulator double diodes
PZM-NA series
NOTES
1999 Jun 11
9
Philips Semiconductors
Product specification
Voltage regulator double diodes
PZM-NA series
NOTES
1999 Jun 11
10
Philips Semiconductors
Product specification
Voltage regulator double diodes
PZM-NA series
NOTES
1999 Jun 11
11
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Date of release: 1999 Jun 11
Document order number:
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