Datasheet

PHOTOMULTIPLIER TUBE
R9876
High QE Multialkali Photocathode
28 mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type
FEATURES
●High Sensitivity at 900 nm
Quantum Efficiency .................................. 0.5 % (Typ.)
Radiant ................................................. 4 mA/W (Typ.)
●Wide Spectral Response .................. 185 nm to 950 nm
●High Signal to Noise Ratio
APPLICATIONS
●Biomedical Analysis
Blood Analyzer, Flow Cytometer, DNA Sequencer
●Spectroscopy
Fluorescence Spectrometer, Raman Spectrometer,
UV–VIS Spectrometer
Figure 1: Electro Optical Structure
Figure 2: Typical Spectral Response
LIGHT
PHOTOELECTRON
TRAJECTORIES
GLASS BULB
GRID
ANODE
PHOTOCATHODE
9th DYNODE
1st DYNODE
2nd DYNODE
TPMSC0024EA
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
1000
TPMSB0230EA
CONVENTIONAL
PMT (R928)
100
10
R9876
1
0.1
CATHODE RADIANT SENSITIVITY
QUANTUM EFFICIENCY
0.01
100 200 300 400 500 600 700 800 900 1000
WAVELENGTH (nm)
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Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2010 Hamamatsu Photonics K.K.
PHOTOMULTIPLIER TUBE R9876
SPECIFICATIONS
GENERAL
Parameter
Description / Value
185 to 950
Spectral Response
380
Wavelength of Maximum Response
MateriaI
Multialkali
Photocathode
Minimum Effective Area
8 × 24
UV glass
Window Material
Structure
Circular-cage
Dynode
Number of Stages
9
4
Anode to Last Dynode
Direct
Interelectrode Anode to All Other
6
Capacitances Electrodes
Base
11-pin base JEDEC No. B11-88
Weight
Approx. 45
Operating Ambient Temperature
-30 to +50
Storage Temperature
-30 to +50
SuitabIe Socket
E678–11A (Sold Separately)
E717–63 (Sold Separately)
SuitabIe Socket Assembly
E717–74 (Sold Separately)
Unit
nm
nm
—
mm
—
—
—
pF
pF
—
g
°C
°C
—
—
—
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Supply Between Anode and Cathode
Voltage Between Anode and Last Dynode
Average Anode Current A
Unit
V
V
mA
Value
1250
250
0.1
CHARACTERISTlCS (at 25 °C)
Parameter
Quantum
at 900 nm
Efficiency
Cathode
Luminous B
Sensitivity
Radiant
at 900 nm
Red / White Ratio C
Min.
Typ.
Max.
Unit
—
0.5
—
%
100
—
—
140
4
0.4
—
—
—
µA/lm
mA/W
—
Anode
Luminous D
Sensitivity
Radiant
at 900 nm
Gain D
Anode Dark Current E
(Supply voltage at 1 × 106 Gain)
Anode Pulse Rise Time F
Time
Electron Transit Time G
Response
Transit Time Spread (T.T.S.) H
50
140
—
A/lm
—
—
4 × 103
1 × 106
—
—
A/W
—
—
0.5
5
nA
—
—
—
2.2
22
1.2
—
—
—
ns
ns
ns
NOTES
A: Averaged over any interval of 30 seconds maximum.
B: The light source is a tungsten filament lamp operated at a
distribution temperature of 2856 K. Supply voltage is 100 V
between the cathode and all other electrodes connected
together as anode.
C: Red / White ratio is the quotient of the cathode current
measured using a red filter (Toshiba R-68) interposed
between the light source and the tube by the cathode
current measured with the filter removed under the same
conditions as Note B.
D: Measured with the same light source as Note B and with
the voltage distribution ratio shown in Table 1 below.
Table 1:Voltage Distribution Ratio
Electrodes
Ratio
K
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9
1
1
1
1
1
1
1
1
1
P
1
SuppIy Voltage: 1000 V, K: Cathode, Dy: Dynode, P: Anode
E: After 30 min Storage in Darkness
F: The rise time is the time for the output pulse to rise from
10 % to 90 % of the peak amplitude when the entire
photocathode is illuminated by a delta function light pulse.
G: The electron transit time is the interval between the arrival
of delta function light pulse at the entrance window of the
tube and the time when the anode output reaches the
peak amplitube. In measurement, the whole photocathode
is illuminated.
H: Also called transit time jitter. This is the fluctuation in
electron transit time between individual pulses in the signal
photoelectron mode, and may be defined as the FWHM of
the frequency distribution of electron transit times.
Figure 3: Dimensional Outline and Basing Diagram (Unit: mm)
28.5 ± 1.5
8 MIN.
PHOTOCATHODE
DY5
5
DY6
6
DY7
7
80 MAX.
8 DY8
DY3 3
94 MAX.
49.0 ± 2.5
24 MIN.
DY4 4
9 DY9
2
DY2
10
1
DY1
PHOTO CATHODE
P
11
K
DIRECTION OF LIGHT
Bottom View
(Basing Diagram)
3.25
2.5
6.0
3.5
32.2 ± 0.5
Cross Section
11 PIN BASE
JEDEC No. B11-88
TPMSA0008EA
Figure 4: Socket (Unit: mm)
Sold Separately
E678-11A
49
3.5
33
38
5
18
4
29
TACCA0064EA
TPMSA0009EB
PHOTOMULTIPLIER TUBE R9876
Figure 5: D Type Socket Assembly (Unit: mm)
Sold Separately
E717-63
E717-74
HOUSING
(INSULATOR)
10
P
DY8
49.0 ± 0.3
DY7
C2
R8
C1
7
4
5
R1 to R10 : 330 kΩ
C1 to C3 : 10 nF
0.7
4
3
7
DY6
6
DY5
5
DY4
4
DY3
3
22.4±0.2
DY2
2
DY1
K
1
°
10
1
30°
R1
11
C2
R8
C1
R4
K
R3
R2
2
R2
DY1
K
DY7
R9
R5
R3
DY2
POTTING
COMPOUND
A
G
2.7
DY3
8
C3
R6
2
6
R4
HOUSING
(INSULATOR)
DY8
R10
R7
32.0±0.5
R5
DY4
9
26.0±0.2
R6
31.0 ± 0.5
DY9
8
7
DY6
DY5
30.0 +0
-1
R9
9
SIGNAL
OUTPUT
(A)
GND (G)
10
R7
29.0 ± 0.3
450 ± 10
C3
SOCKET
PIN No.
P
14.0±0.5
DY9
38.0 ± 0.3
R10
SIGNAL GND
SIGNAL OUTPUT
RG-174/U(BLACK)
POWER SUPPLY
GND
AWG22 (BLACK)
PMT
26.0±0.2
SOCKET
PIN No.
32.0±0.5
PMT
3.5
33.0 ± 0.3
5
0.7
4- 2.8
R1
-HV (K)
11
-HV
AWG22 (VIOLET)
R13
R1 to R10 : 330 kΩ
C1 to C3 : 10 nF
* "Wiring diagram at above applies when -HV
is supplied." To supply +HV,connect the pin
"G" to+HV, and the pin "K" to the GND. Refer to "(d) d-2" on page 87 for the connection
method.
TACCA0002EH
* Hamamatsu also provides C4900 series compact high voltage power
supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply.
TACCA0277EA
Warning–Personal Safety Hazards
Electrical Shock–Operating voltages applied to this
device present a shock hazard.
WEB SITE www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Electron Tube Division
314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: [email protected]
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United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: [email protected]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected]
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: [email protected]
TPMS1076E01
AUG. 2010 IP
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