Data Sheet

SO
T1
43
B
PESD2ETH-AX
Ultra low capacitance double rail-to-rail ESD protection diode
24 February 2016
Product data sheet
1. General description
Ultra low capacitance double rail-to-rail ElectroStatic Discharge (ESD) protection diode in
a small SOT143B Surface-Mounted Device (SMD) plastic package.
The device is designed to protect two high-speed data lines or high-frequency signal
lines from the damage caused by ESD and other transients.
The device integrates two ultra low capacitance rail-to-rail diodes and one additional ESD
protection diode to ensure signal line protection even if no supply voltage is available.
2. Features and benefits
•
•
•
•
•
•
ESD protection of two high-speed data lines
Ultra low capacitance: Cd = 1.8 pF
IEC 61000-4-2 up to 12 kV
ISO 10605 (330 pF, 2 kΩ) up to 15 kV
Very low reverse current
AEC-Q101 qualified
3. Applications
•
•
•
100BASE-T1 / OPEN Alliance BroadR-Reach automotive Ethernet
Low-Voltage Differential Signaling (LVDS) automotive
USB 2.0 automotive
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Cd
diode capacitance
f = 1 MHz; VR = 0 V; Tamb = 25 °C
VRWM
reverse standoff
voltage
Tamb = 25 °C
diode capacitance
f = 1 MHz; VR = 0 V; Tamb = 25 °C
Min
Typ
Max
Unit
-
16
-
pF
-
-
5.5
V
-
1.8
-
pF
Zener diode
[1]
Per channel
Cd
[1]
[2]
Measured from pin 4 to ground.
Measured from pin 2 and 3 to ground.
Scan or click this QR code to view the latest information for this product
[2]
PESD2ETH-AX
NXP Semiconductors
Ultra low capacitance double rail-to-rail ESD protection diode
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
GND
ground
2
I/O 1
input/output 1
3
I/O 2
input/output 2
4
VCC
supply line
Simplified outline
4
Graphic symbol
3
4
1
1
2
SOT143B
2
3
006aaa482
6. Ordering information
Table 3.
Ordering information
Type number
PESD2ETH-AX
Package
Name
Description
Version
SOT143B
plastic surface-mounted package; 4 leads
SOT143B
7. Marking
Table 4.
Marking codes
Type number
Marking code
[1]
PESD2ETH-AX
2A%
[1]
PESD2ETH-AX
Product data sheet
% = placeholder for manufacturing site code
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Ultra low capacitance double rail-to-rail ESD protection diode
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Tamb
Conditions
Min
Max
Unit
ambient temperature
-40
125
°C
Tstg
storage temperature
-55
125
°C
VESD
electrostatic discharge voltage
-
12
kV
IEC 61000-4-2; level 4; contact
discharge
001aaa631
IPP
100 %
90 %
10 %
tr = 0.6 ns to 1 ns
t
30 ns
60 ns
Fig. 1.
ESD pulse waveform according to IEC 61000-4-2
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Ultra low capacitance double rail-to-rail ESD protection diode
9. Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRWM
reverse standoff
voltage
Tamb = 25 °C
-
-
5.5
V
VBR
breakdown voltage
IR = 1 mA; Tamb = 25 °C
[1]
6
-
9
V
Cd
diode capacitance
f = 1 MHz; VR = 0 V; Tamb = 25 °C
[1]
-
16
-
pF
VF
forward voltage
IF = 1 mA; Tamb = 25 °C
[2]
-
0.7
-
V
IR
reverse current
VR = 3 V; Tamb = 25 °C
[3]
-
1
100
nA
Cd
diode capacitance
f = 1 MHz; VR = 0 V; Tamb = 25 °C
[2]
-
1.8
-
pF
Zener diode
Per channel
[1]
[2]
[3]
Measured from pin 4 to ground.
Measured from pin 2 and 3 to ground.
Measured from pin 2, 3 and 4 to ground.
aaa-022029
2.2
Cd
(pF)
2.0
1.8
1.6
1.4
1.2
0
1
2
3
4
VR (V)
5
f = 1 MHz; Tamb = 25 °C
Measured from pin 2 and 3 to ground.
Fig. 2.
Diode capacitance as a function of reverse voltage; typical values
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Ultra low capacitance double rail-to-rail ESD protection diode
ESD TESTER
4 GHz DIGITAL
OSCILLOSCOPE
RG 223/U
50 Ω coax
Rd
40 dB
ATTENUATOR
Cs
50 Ω
DUT
(DEVICE
UNDER
TEST)
IEC 61000-4-2 ed.2
Cs = 150 pF; Rd = 330 Ω
10
2
V
(kV) 8
V
(kV) 0
6
-2
4
-4
2
-6
0
-8
-2
-10
0
10
20
30
40
50
t (ns)
60
70
-10
-10
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
0
10
20
30
40
50
t (ns)
60
70
unclamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
aaa-003952
Fig. 3.
ESD clamping test setup and waveforms
aaa-022035
250
VCL
(V)
200
aaa-022036
150
VCL
(V)
50
150
100
-50
50
VCL at 30 ns = -2.4 V
0
-150
VCL at 30 ns = 27 V
-50
-100
-10
Fig. 4.
0
10
20
30
40
50
60
t (ns)
-250
-10
70
Clamped +8 kV pulse waveform (IEC 61000-4-2
network)
PESD2ETH-AX
Product data sheet
Fig. 5.
0
20
30
40
50
60
t (ns)
70
Clamped -8 kV pulse waveform
(IEC 61000-4-2 network)
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Ultra low capacitance double rail-to-rail ESD protection diode
10. Application information
connector
TDN
100BASE-T1
BroadR-Reach PHY
common
mode choke
TJA1100
TDP
PESD2ETH-AX
aaa-021937
Fig. 6.
Application diagram: BroadR-Reach PHY / 100BASE-T1
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1.
2.
3.
4.
5.
Place the device as close to the input terminal or connector as possible.
Minimize the path length between the device and the protected line.
Keep parallel signal paths to a minimum.
Avoid running protected conductors in parallel with unprotected conductors.
Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Use ground planes whenever possible. For multilayer PCBs, use ground vias.
11. Test information
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PESD2ETH-AX
Product data sheet
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Ultra low capacitance double rail-to-rail ESD protection diode
12. Package outline
3.0
2.8
1.1
0.9
1.9
4
2.5
2.1
3
0.45
0.15
1.4
1.2
1
2
0.88
0.78
0.48
0.38
0.15
0.09
1.7
Dimensions in mm
Fig. 7.
04-11-16
Package outline SOT143B
13. Soldering
3.25
0.6
(3×)
0.5
(3×)
1.9
solder lands
0.7 0.6
(3×) (3×)
solder resist
2
3
solder paste
occupied area
0.7 0.6
Dimensions in mm
0.75
0.95
0.9
1
Fig. 8.
sot143b_fr
Reflow soldering footprint for SOT143B
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Ultra low capacitance double rail-to-rail ESD protection diode
4.45
2.2
1.2
(3×)
1.425
(3×)
solder lands
4.6
solder resist
2.575
occupied area
Dimensions in mm
1.425
preferred transport direction during soldering
1
1.2
Fig. 9.
sot143b_fw
Wave soldering footprint for SOT143B
PESD2ETH-AX
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14. Revision history
Table 7.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PESD2ETH-AX v.1
20160224
Product data sheet
-
-
PESD2ETH-AX
Product data sheet
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Ultra low capacitance double rail-to-rail ESD protection diode
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Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
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PESD2ETH-AX
Product data sheet
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16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Characteristics ....................................................... 4
10
Application information .........................................6
11
11.1
Test information ..................................................... 6
Quality information ............................................... 6
12
Package outline ..................................................... 7
13
Soldering ................................................................ 7
14
Revision history ..................................................... 9
15
15.1
15.2
15.3
15.4
Legal information .................................................10
Data sheet status ............................................... 10
Definitions ...........................................................10
Disclaimers .........................................................10
Trademarks ........................................................ 11
© NXP Semiconductors N.V. 2016. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 24 February 2016
PESD2ETH-AX
Product data sheet
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