HVGT ESJG50F08 8.0kV 500mA 100nS HIGH VOLTAGE DIODES Outline Drawings : mm ESJG50F08 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 9.0 o 1.28 Features High speed switching High Current 22 min. High temperature resistance High reliability design High Voltage 9.0 22 min. DO-909 Cathode Mark Applications X light Power supply Mark Laser Voltage doubler circuit ESJG50 F08 HVGT Microwave emission power Maximum Ratings and Characteristics Absolute Maximum Ratings (Ta=25°C Unless otherwise specified ) Items Repetitive Peak Renerse Voltage Average Output Current Suege Current Symbols Condition ESJG50F08 Units 8.0 kV Ta=25°C,Resistive Load 500 mA peak Tp=8.3mS 25 A peak V RRM IO I FSM Junction Temperature Tj 175 °C Allowable Operation Case Temperature Tc -55 to +175 °C Storage Temperature Tstg -55 to +175 °C Conditions ESJG50F08 Units Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Symbols Maximum Forward Voltage Drop VF at 25°C,IF =IF(AV) 15 V Maximum Reverse Current IR1 at 25°C,VR =VRRM 2.0 uA IR2 at 100°C,V R =VRRM 50 uA Maximum Reverse Recovery Time Trr at 25°C 100 nS Junction Capacitance Cj at 25°C,VR=0V,f=1MHz 10 pF GETE ELECTRONICS CO.,LTD Http://www.getedz.com E-mail:[email protected] 2015