TSSP58038SS1XB www.vishay.com Vishay Semiconductors IR Receiver Module for Light Barrier Systems FEATURES • Constant gain for consistent results under any lighting condition • Up to 1 m for presence sensing • Uses modulated bursts at 38 kHz • 940 nm peak wavelength • PIN diode and sensor IC in one package • Low supply current 19026 • Shielding against EMI • Visible light is suppressed by IR filter MECHANICAL DATA • Insensitive to supply voltage ripple and noise Pinning: • Supply voltage: 2.5 V to 5.5 V 1 = OUT, 2 = GND, 3 = VS • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION APPLICATIONS The TSSP58038SS1XB is a compact infrared detector module for presence sensing applications. It receives 38 kHz modulated signals and has a peak sensitivity of 940 nm. The TSSP58038SS1XB is 20 x less sensitive than the TSSP58038, for ease of use in reflective applications at less than 1 m range where high sensitivity is not needed and can complicate the design. • Reflective sensors for hand dryers, towel or soap dispensers, water faucets, toilet flush • Vending machine fall detection • Security and pet gates • Person or object vicinity activation This component has not been qualified to automotive specifications. PARTS TABLE Carrier frequency 38 kHz TSSP58038SS1XB Package Minicast Pinning 1 = OUT, 2 = GND, 3 = VS Dimensions (mm) 5.0 W x 6.95 H x 4.8 D Mounting Leaded Application Presence sensors BLOCK DIAGRAM PRESENCE SENSING +3V 16833_8 3 33 kΩ IR emitter VS Envelope signal 1 Input AMP Band pass Demodulator OUT 38 kHz +3V 2 PIN Rev. 1.0, 19-Jan-16 Out to μC GND 1 Document Number: 82740 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSSP58038SS1XB www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION Supply voltage SYMBOL VALUE UNIT VS -0.3 to +6 V mA Supply current IS 5 Output voltage VO -0.3 to (VS + 0.3) V Output current IO 5 mA Tj 100 °C Storage temperature range Junction temperature Tstg -25 to +85 °C Operating temperature range Tamb -25 to +85 °C t ≤ 10 s, 1 mm from case Tsd 260 °C Tamb ≤ 85 °C Ptot 10 mW Soldering temperature Power consumption Note • Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability. ELECTRICAL AND OPTICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. Ev = 0, VS = 5 V ISD 0.55 0.7 0.9 mA Ev = 40 klx, sunlight ISH - 0.8 - mA VS 2.5 - 5.5 V Ev = 0, test signal see fig. 1, IR diode TSAL6200, IF = 400 mA d - 5 - m mW/m2, Supply current (pin 3) Supply voltage Transmission distance Output voltage low (pin 1) IOSL = 0.5 mA, Ee = 2 VOSL - - 100 mV Minimum irradiance Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 1 Ee min. - 12 25 mW/m2 Maximum irradiance tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 1 Ee max. 50 - - W/m2 Angle of half transmission distance ϕ1/2 - ± 45 - deg Directivity test signal see fig. 1 UNIT TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1.40 Optical Test Signal (IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, t = 10 ms) tpo - Output Pulse Width (ms) Ee t tpi * * tpi VO Output Signal 16110 1) 7/f0 < td < 15/f0 2) t - 5/f < t < t + 6/f pi 0 po pi 0 VOH VOL T 10/f0 is recommended for optimal function 1.20 Output pulse width 1.00 0.80 0.60 Input burst length 0.40 λ = 950 nm, optical test signal, fig. 1 0.20 0 0.1 td 1) tpo 2) t Fig. 1 - Output Active Low Rev. 1.0, 19-Jan-16 10 1000 100 000 Ee - Irradiance (mW/m2) Fig. 2 - Pulse Length and Sensitivity in Dark Ambient 2 Document Number: 82740 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSSP58038SS1XB www.vishay.com 20 Optical Test Signal 600 µs Ee min. - Sensistivity (mW/m2) Ee Vishay Semiconductors t 600 µs t = 60 ms 94 8134 Output Signal, (see fig. 4) VO VOH 18 16 14 12 10 8 6 4 2 0 VOL -30 S (λ)rel - Relative Spectral Sensitivity ton, toff - Output Pulse Width (ms) ton 0.6 0.5 toff 0.3 0.2 λ = 950 nm, optical test signal, fig. 3 0.1 0 10 100 1000 50 70 90 1.2 1.0 0.8 0.6 0.4 0.2 0 750 10 000 Ee - Irradiance (mW/m2) 850 950 1150 1050 λ - Wavelength (nm) 94 8408 Fig. 4 - Output Pulse Diagram Fig. 7 - Relative Spectral Sensitivity vs. Wavelength 0° 1.2 Ee min./Ee - Relative Responsivity 30 Fig. 6 - Sensitivity vs. Ambient Temperature 0.8 0.4 10 Tamb - Ambient Temperature (°C) Fig. 3 - Output Function 0.7 -10 t t off t on 10° 20° 30° 1.0 0.8 40° 1.0 0.6 0.4 f = f0 ± 5 % Δf(3 dB) = f0/10 0.2 0.9 50° 0.8 60° 70° 0.7 80° 0.0 0.7 16925 0.9 1.1 1.3 0.6 f/f0 - Relative Frequency 19258 Fig. 5 - Frequency Dependence of Responsivity Rev. 1.0, 19-Jan-16 0.4 0.2 0 drel - Relative Transmission Distance Fig. 8 - Horizontal Directivity 3 Document Number: 82740 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSSP58038SS1XB www.vishay.com 0° Vishay Semiconductors 10° 25 20° Ee min. - Sensitivity (mW/m2) 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 23 21 19 17 15 13 11 9 7 5 0.6 19259 0.4 0.2 1.5 0 d rel - Relative Transmission Distance 2.5 3.5 4.5 5.5 VS - Supply Voltage (V) Fig. 9 - Vertical Directivity Fig. 10 - Sensitivity vs. Supply Voltage The typical application of this device is a reflective or beam break sensor with active low “detect” or “no detect” information contained in its output. Applications requiring up to 1 m beam break or 0.5 m reflective range benefit from the lower gain of these sensors because they are less sensitive to stray signal from the emitter, simplifying the mechanical design. Example for a sensor hardware: IR detector IR emitter Separation to avoid crosstalk by stray light inside the housing There should be no common window in front of the emitter and detector in order to avoid crosstalk via guided light through the window. Rev. 1.0, 19-Jan-16 4 Document Number: 82740 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSSP58038SS1XB www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 5 4.8 (4) 2.8 (5.55) 6.95 ± 0.3 8.25 ± 0.3 R2 0.9 1.1 30.5 ± 0.5 (1.54) 0.85 max. 0.7 max. 2.54 nom. 2.54 nom. 0.5 max. 1.2 ± 0.2 Marking area technical drawings according to DIN specifications Not indicated to lerances ± 0.2 Drawing-No.: 6.550-5263.01-4 Issue: 12; 16.04.10 19009 Rev. 1.0, 19-Jan-16 R2 5 Document Number: 82740 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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