Data Sheet

PESD18VF1BSF
Ultra low capacitance bidirectional ESD protection diode
20 May 2015
Product data sheet
1. General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode
in a DSN0603-2 (SOD962-2) leadless ultra small Surface-Mounted Device (SMD)
package designed to protect one signal line from the damage caused by ESD and other
transients.
2. Features and benefits
•
•
•
•
Bidirectional ESD protection of one line
Ultra low diode capacitance Cd = 0.28 pF
High reverse standoff voltage VRWM = 18 V
ESD protection up to ±10 kV according to IEC 61000-4-2
3. Applications
•
•
NFC antenna protection
Protection of high-speed and standard data lines with high signal levels
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Cd
diode capacitance
f = 1 MHz; VR = 0 V
-
0.28
0.45
pF
VRWM
reverse standoff
voltage
-
-
18
V
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
K1
cathode (diode 1)
2
K2
cathode (diode 2)
Simplified outline
1
2
Graphic symbol
1
2
sym045
Transparent
top view
DSN0603-2 (SOD962-2)
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PESD18VF1BSF
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diode
6. Ordering information
Table 3.
Ordering information
Type number
Package
PESD18VF1BSF
Name
Description
Version
DSN0603-2
Leadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3
mm
SOD962-2
7. Marking
Table 4.
Marking codes
Type number
Marking code
PESD18VF1BSF
J
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
IPPM
peak pulse current
tp = 8/20 µs
-
1
A
Tj
junction temperature
-45
125
°C
Tamb
ambient temperature
-45
125
°C
Tstg
storage temperature
-65
150
°C
[1]
ESD maximum ratings
VESD
electrostatic discharge voltage
IEC 61000-4-2; contact discharge
[2]
-
10
kV
IEC 61000-4-2; air discharge
[2]
-
15
kV
-
10
kV
MIL-STD-883; human body model;
HBM
[1]
[2]
PESD18VF1BSF
Product data sheet
According to IEC 61000-4-5 and IEC 61643-321.
Device stressed with ten non-repetitive ESD pulses.
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PESD18VF1BSF
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diode
001aaa631
001aaa630
120
IPP
100 %
100 % IPP; 8 µs
IPP
(%)
80
90 %
e- t
50 % IPP; 20 µs
40
10 %
0
Fig. 1.
0
10
20
30
t (µs)
t
tr = 0.6 ns to 1 ns
40
30 ns
60 ns
8/20 µs pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
Fig. 2.
ESD pulse waveform according to
IEC 61000-4-2
9. Characteristics
Table 6.
Characteristics
Symbol
Parameter
VRWM
reverse standoff
voltage
Cd
diode capacitance
VBR
Min
Typ
Max
Unit
-
-
18
V
f = 1 MHz; VR = 0 V
-
0.28
0.45
pF
breakdown voltage
IR = 1 mA
19
21
-
V
VCL
clamping voltage
IPPM = 1 A
[1]
-
-
16
V
Rdyn
dynamic resistance
IR = 5 A
[2]
-
0.6
-
Ω
IRM
reverse leakage
current
VR = 18 V
-
1
30
nA
[1]
[2]
PESD18VF1BSF
Product data sheet
Conditions
According to IEC 61000-4-5 and IEC 61643-321.
Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse; ANSI / ESD
STM5.5.1-2008.
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PESD18VF1BSF
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diode
IPPM
IPP
aaa-013445
0.4
Cd
(pF)
0.35
0.30
IR
IRM
-VCL -VBR -VRWM
-IRM
-IR
VRWM VBR VCL
0.25
-
0.20
-20
-10
0
10
VR (V)
-IPP
20
-IPPM
f = 1 MHz; VR = 0 V; Tamb = 25 °C
Fig. 3.
+
Fig. 4.
Diode capacitance as a function of reverse
voltage; typical values
006aab325
V-I characteristics for a bidirectional ESD
protection diode
aaa-013446
25
I
(A)
20
15
10
5
0
0
10
20
VCL (V)
30
tp = 100 ns; Transmission Line Pulse (TLP)
Fig. 5.
Dynamic resistance
PESD18VF1BSF
Product data sheet
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PESD18VF1BSF
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diode
ESD TESTER
4 GHz DIGITAL
OSCILLOSCOPE
RG 223/U
50 Ω coax
Rd
40 dB
ATTENUATOR
Cs
50 Ω
DUT
(DEVICE
UNDER
TEST)
IEC 61000-4-2 ed.2
Cs = 150 pF; Rd = 330 Ω
10
2
V
(kV) 8
V
(kV) 0
6
-2
4
-4
2
-6
0
-8
-2
-10
0
10
20
30
40
50
t (ns)
60
-10
-10
70
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
0
10
20
30
40
50
t (ns)
60
70
unclamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
aaa-003952
Fig. 6.
ESD clamping test setup and waveforms
aaa-013447
80
VCL
(V)
VCL
(V)
50
-20
20
-50
-10
-10
Fig. 7.
aaa-013448
10
10
30
50
t (ns)
-80
-10
70
Clamped +8 kV pulse waveform (IEC 61000-4-2
network)
PESD18VF1BSF
Product data sheet
Fig. 8.
30
50
t (ns)
70
Clamped -8 kV pulse waveform (IEC 61000-4-2
network)
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PESD18VF1BSF
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diode
10. Application information
The device is designed for the protection of one bidirectional data line from surge pulses
and ESD damage. The device is suitable on lines where the signal polarities are both
positive and negative with respect to ground.
line to be protected
ESD protection diode
GND
aaa-002737
Fig. 9.
Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1.
2.
3.
4.
5.
Place the device as close to the input terminal or connector as possible.
Minimize the path length between the device and the protected line.
Keep parallel signal paths to a minimum.
Avoid running protected conductors in parallel with unprotected conductors.
Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Use ground planes whenever possible. For multilayer PCBs, use ground vias.
11. Package outline
0.325
0.275
0.32
0.28
1
0.03
max
0.15
0.13
0.4
0.625
0.575
2
Dimensions in mm
0.25
0.23
14-12-03
Fig. 10. Package outline DSN0603-2 (SOD962-2)
PESD18VF1BSF
Product data sheet
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PESD18VF1BSF
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diode
12. Soldering
Footprint information for reflow soldering of leadless ultra small package; 2 terminals
SOD962-2
0.85
0.4
0.4
R0.025 (8×)
0.24
(2×)
0.14
(2×)
0.2
(2×)
solder land
solder land plus solder paste
solder paste deposit
solder resist
Dimensions in mm
sod962-2_fr
Fig. 11. Reflow soldering footprint for DSN0603-2 (SOD962-2)
PESD18VF1BSF
Product data sheet
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PESD18VF1BSF
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Ultra low capacitance bidirectional ESD protection diode
13. Revision history
Table 7.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PESD18VF1BSF v.1
20150520
Product data sheet
-
-
PESD18VF1BSF
Product data sheet
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PESD18VF1BSF
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diode
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Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
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PESD18VF1BSF
Product data sheet
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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PESD18VF1BSF
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Ultra low capacitance bidirectional ESD protection diode
15. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 1
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................2
9
Characteristics ....................................................... 3
10
Application information .........................................6
11
Package outline ..................................................... 6
12
Soldering ................................................................ 7
13
Revision history ..................................................... 8
14
14.1
14.2
14.3
14.4
Legal information ...................................................9
Data sheet status ................................................. 9
Definitions .............................................................9
Disclaimers ...........................................................9
Trademarks ........................................................ 10
© NXP Semiconductors N.V. 2015. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddr[email protected]
Date of release: 20 May 2015
PESD18VF1BSF
Product data sheet
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