Data Sheet

PESD24VF1BL
Ultra low capacitance bidirectional ESD protection diode
14 February 2014
Product data sheet
1. General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a
DFN1006-2 (SOD882) ultra small and leadless Surface-Mounted Device (SMD) plastic
package designed to protect one signal line from the damage caused by ESD and other
transients.
2. Features and benefits
•
•
•
•
•
Ultra low diode capacitance Cd = 0.30 pF
High reverse standoff voltage VRWM = 24 V
Ultra low leakage current: IRM = 1 nA
ESD protection up to 10 kV; IEC 61000-4-2
AEC-Q101 qualified
3. Applications
•
•
NFC antenna protection
Protection of high-speed data lines
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Cd
diode capacitance
f = 1 MHz; VR = 0 V
VRWM
reverse standoff
voltage
[1]
Measured from pin 1 to pin 2.
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[1]
Min
Typ
Max
Unit
0.23
0.3
0.45
pF
-
-
24
V
PESD24VF1BL
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diode
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
K1
cathode (diode 1)
2
K2
cathode (diode 2)
Simplified outline
1
2
Graphic symbol
1
2
sym045
Transparent
top view
DFN1006-2 (SOD882)
6. Ordering information
Table 3.
Ordering information
Type number
PESD24VF1BL
Package
Name
Description
Version
DFN1006-2
DFN1006-2: leadless ultra small plastic package; 2 terminals
SOD882
7. Marking
Table 4.
Marking codes
Type number
Marking code
PESD24VF1BL
7L
PESD24VF1BL
Product data sheet
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PESD24VF1BL
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Ultra low capacitance bidirectional ESD protection diode
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
IPPM
peak pulse current
tp = 8/20 µs
-
1
A
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
[1][2]
ESD maximum ratings
VESD
electrostatic discharge voltage
[1]
[2]
[3]
IEC 61000-4-2 (air discharge)
[1][3]
-
15
kV
IEC 61000-4-2 (contact discharge)
[1][3]
-
10
kV
MIL-STD-883 (human body model)
[1]
-
10
kV
Measured from pin 1 to pin 2.
According to IEC 61000-4-5 and IEC 61643-321.
Device stressed with ten non-repetitive ESD pulses.
001aaa631
001aaa630
120
IPP
100 %
100 % IPP; 8 µs
IPP
(%)
80
90 %
e- t
50 % IPP; 20 µs
40
10 %
0
Fig. 1.
0
10
20
30
t (µs)
8/20 µs pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
PESD24VF1BL
Product data sheet
t
tr = 0.6 ns to 1 ns
40
30 ns
60 ns
Fig. 2.
ESD pulse waveform according to
IEC 61000-4-2
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PESD24VF1BL
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diode
9. Characteristics
Table 6.
Characteristics
Symbol
Parameter
VRWM
reverse standoff
voltage
IRM
reverse leakage
current
VR = 24 V
VCL
clamping voltage
VBR
Min
Typ
Max
Unit
-
-
24
V
[1]
-
1
30
nA
IPP = 1 A
[1][2]
-
-
17
V
breakdown voltage
IR = 10 mA
[1]
24.5
28
31.5
V
Cd
diode capacitance
f = 1 MHz; VR = 0 V
[1]
0.23
0.3
0.45
pF
Rdyn
dynamic resistance
IR = 7.5 A
[3][1]
-
0.8
-
Ω
[1]
[2]
[3]
Conditions
Measured from pin 1 to pin 2.
According to IEC 61000-4-5 and IEC 61643-321.
Non-repetitive current pulse; Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008.
IPPM
IPP
aaa-011765
0.40
Cd
(pF)
0.35
0.30
-VCL -VBR -VRWM
IR
IRM
-IRM
-IR
VRWM VBR VCL
0.25
-
0.20
-30
-10
10
VR (V)
-IPP
30
-IPPM
f = 1 MHz; Tamb = 25 °C
Fig. 3.
Diode capacitance as a function of reverse
voltage; typical values
PESD24VF1BL
Product data sheet
+
Fig. 4.
V-I characteristics for a bidirectional ESD
protection diode
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PESD24VF1BL
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diode
aaa-011766
25
I
(A)
20
15
10
5
0
0
10
20
30
40
VCL (V)
50
tp = 100 ns; Transmission Line Pulse (TLP)
Fig. 5.
Dynamic resistance
PESD24VF1BL
Product data sheet
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PESD24VF1BL
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Ultra low capacitance bidirectional ESD protection diode
ESD TESTER
4 GHz DIGITAL
OSCILLOSCOPE
RG 223/U
50 Ω coax
Rd
40 dB
ATTENUATOR
Cs
50 Ω
DUT
(DEVICE
UNDER
TEST)
IEC 61000-4-2, ed.2
Cs = 150 pF; Rd = 330 Ω
10
2
V
(kV) 8
V
(kV) 0
6
-2
4
-4
2
-6
0
-8
-2
-10
0
10
20
30
40
50
t (ns)
60
70
-10
-10
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
10
20
30
40
50
t (ns)
60
70
unclamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
20
100
VCL
(V)
VCL
(V)
60
-20
20
-60
-20
-10
0
10
30
50
t (ns)
70
-100
-10
10
30
50
t (ns)
70
clamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
aaa-011762
Fig. 6.
ESD clamping test setup and waveforms
PESD24VF1BL
Product data sheet
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PESD24VF1BL
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Ultra low capacitance bidirectional ESD protection diode
10. Test information
10.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
11. Application information
The device is designed for the protection of one bidirectional data line from surge pulses
and ESD damage. The device is suitable on lines where the signal polarities are both
positive and negative with respect to ground.
line to be protected
ESD protection diode
GND
aaa-002737
Fig. 7.
Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1.
2.
3.
4.
5.
Place the device as close to the input terminal or connector as possible.
Minimize the path length between the device and the protected line.
Keep parallel signal paths to a minimum.
Avoid running protected conductors in parallel with unprotected conductors.
Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Use ground planes whenever possible. For multilayer PCBs, use ground vias.
PESD24VF1BL
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Ultra low capacitance bidirectional ESD protection diode
12. Package outline
0.50
0.46
0.62
0.55
2
0.30
0.22
0.65
0.30
0.22
1
0.55
0.47
cathode marking on top side (if applicable)
Dimensions in mm
Fig. 8.
1.02
0.95
03-04-17
Package outline DFN1006-2 (SOD882)
13. Soldering
1.3
0.7
R0.05 (8×)
solder lands
0.6 0.7 0.8
(2×) (2×) (2×)
0.9
solder resist
solder paste
occupied area
0.3
(2×)
Dimensions in mm
0.4
(2×)
0.5
(2×)
Fig. 9.
sod882_fr
Reflow soldering footprint for DFN1006-2 (SOD882)
PESD24VF1BL
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Ultra low capacitance bidirectional ESD protection diode
14. Revision history
Table 7.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PESD24VF1BL v.1
20140214
Product data sheet
-
-
PESD24VF1BL
Product data sheet
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PESD24VF1BL
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diode
In no event shall NXP Semiconductors be liable for any indirect, incidental,
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or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
15. Legal information
15.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
15.2 Definitions
Preview — The document is a preview version only. The document is still
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Short data sheet — A short data sheet is an extract from a full data sheet
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is deemed to offer functions and qualities beyond those described in the
Product data sheet.
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or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
PESD24VF1BL
Product data sheet
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make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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Ultra low capacitance bidirectional ESD protection diode
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15.4 Trademarks
Notice: All referenced brands, product names, service names and
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Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
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Ultra low capacitance bidirectional ESD protection diode
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Characteristics ....................................................... 4
10
10.1
Test information ..................................................... 7
Quality information ............................................... 7
11
Application information .........................................7
12
Package outline ..................................................... 8
13
Soldering ................................................................ 8
14
Revision history ..................................................... 9
15
15.1
15.2
15.3
15.4
Legal information .................................................10
Data sheet status ............................................... 10
Definitions ...........................................................10
Disclaimers .........................................................10
Trademarks ........................................................ 11
© NXP N.V. 2014. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 14 February 2014
PESD24VF1BL
Product data sheet
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