PESD24VF1BSF Ultra low capacitance bidirectional ESD protection diode 11 December 2015 Product data sheet 1. General description Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a DSN0603-2 (SOD962-2) leadless ultra small Surface-Mounted Device (SMD) package designed to protect one signal line from the damage caused by ESD and other transients. 2. Features and benefits • • • • Bidirectional ESD protection of one line Ultra low diode capacitance Cd = 0.25 pF High reverse standoff voltage VRWM = 24 V ESD protection up to ±10 kV according to IEC 61000-4-2 3. Applications • • NFC antenna protection Protection of high-speed and standard data lines with high signal levels 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Cd diode capacitance f = 1 MHz; VR = 0 V - 0.25 0.4 pF VRWM reverse standoff voltage - - 24 V 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K1 cathode (diode 1) 2 K2 cathode (diode 2) Simplified outline 1 2 Graphic symbol 1 2 sym045 Transparent top view DSN0603-2 (SOD962-2) Scan or click this QR code to view the latest information for this product PESD24VF1BSF NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 6. Ordering information Table 3. Ordering information Type number Package PESD24VF1BSF Name Description Version DSN0603-2 Leadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3 mm SOD962-2 7. Marking Table 4. Marking codes Type number Marking code PESD24VF1BSF H 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit IPPM peak pulse current tp = 8/20 µs - 1 A Tj junction temperature -45 125 °C Tamb ambient temperature -45 125 °C Tstg storage temperature -65 150 °C [1] ESD maximum ratings VESD electrostatic discharge voltage IEC 61000-4-2; contact discharge [2] - 10 kV IEC 61000-4-2; air discharge [2] - 15 kV - 10 kV MIL-STD-883; human body model; HBM [1] [2] PESD24VF1BSF Product data sheet According to IEC 61000-4-5 and IEC 61643-321. Device stressed with ten non-repetitive ESD pulses. All information provided in this document is subject to legal disclaimers. 11 December 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 12 PESD24VF1BSF NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 001aaa631 001aaa630 120 IPP 100 % 100 % IPP; 8 µs IPP (%) 80 90 % e-t 50 % IPP; 20 µs 40 10 % 0 Fig. 1. 0 10 20 30 tp (µs) t tr = 0.6 ns to 1 ns 40 30 ns 60 ns 8/20 µs pulse waveform according to IEC 61000-4-5 and IEC 61643-321 Fig. 2. ESD pulse waveform according to IEC 61000-4-2 9. Characteristics Table 6. Characteristics Symbol Parameter VRWM reverse standoff voltage IRM reverse leakage current Cd Min Typ Max Unit - - 24 V VR = 24 V - 1 30 nA diode capacitance f = 1 MHz; VR = 0 V - 0.25 0.4 pF VBR breakdown voltage IR = 1 mA 24.5 28 - V VCL clamping voltage IPPM = 1 A [1] - - 17 V Rdyn dynamic resistance IR = 5 A [2] - 0.7 - Ω [1] [2] PESD24VF1BSF Product data sheet Conditions According to IEC 61000-4-5 and IEC 61643-321. Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse; ANSI / ESD STM5.5.1-2008. All information provided in this document is subject to legal disclaimers. 11 December 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 12 PESD24VF1BSF NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode IPPM IPP aaa-013492 0.30 Cd (pF) 0.25 0.20 IR IRM -VCL -VBR -VRWM -IRM -IR VRWM VBR VCL 0.15 - 0.10 -30 -10 10 VR (V) -IPP 30 -IPPM f = 1 MHz; VR = 0 V; Tamb = 25 °C Fig. 3. + Diode capacitance as a function of reverse voltage; typical values Fig. 4. 006aab325 V-I characteristics for a bidirectional ESD protection diode aaa-013493 25 I (A) 20 15 10 5 0 0 10 20 30 VCL (V) 40 tp = 100 ns; Transmission Line Pulse (TLP) Fig. 5. Dynamic resistance PESD24VF1BSF Product data sheet All information provided in this document is subject to legal disclaimers. 11 December 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 12 PESD24VF1BSF NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode ESD TESTER 4 GHz DIGITAL OSCILLOSCOPE RG 223/U 50 Ω coax Rd 40 dB ATTENUATOR Cs 50 Ω DUT (DEVICE UNDER TEST) IEC 61000-4-2 ed.2 Cs = 150 pF; Rd = 330 Ω 10 2 V (kV) 8 V (kV) 0 6 -2 4 -4 2 -6 0 -8 -2 -10 0 10 20 30 40 50 t (ns) 60 70 -10 -10 unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) 0 10 20 30 40 50 t (ns) 60 70 unclamped -8 kV ESD pulse waveform (IEC 61000-4-2 network) aaa-003952 Fig. 6. ESD clamping test setup and waveforms aaa-013494 100 VCL (V) VCL (V) 60 -20 20 -60 -20 -10 Fig. 7. aaa-013495 20 10 30 50 t (ns) -100 -10 70 Clamped +8 kV pulse waveform (IEC 61000-4-2 network) PESD24VF1BSF Product data sheet Fig. 8. 30 50 t (ns) 70 Clamped -8 kV pulse waveform (IEC 61000-4-2 network) All information provided in this document is subject to legal disclaimers. 11 December 2015 10 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 12 PESD24VF1BSF NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 10. Application information The device is designed for the protection of one bidirectional data line from surge pulses and ESD damage. The device is suitable on lines where the signal polarities are both positive and negative with respect to ground. line to be protected ESD protection diode GND aaa-002737 Fig. 9. Application diagram Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. 2. 3. 4. 5. Place the device as close to the input terminal or connector as possible. Minimize the path length between the device and the protected line. Keep parallel signal paths to a minimum. Avoid running protected conductors in parallel with unprotected conductors. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Use ground planes whenever possible. For multilayer PCBs, use ground vias. PESD24VF1BSF Product data sheet All information provided in this document is subject to legal disclaimers. 11 December 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 12 PESD24VF1BSF NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 11. Package outline Leadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3 mm SOD962-2 L 1 2 b e1 A A1 E D (1) 0 0.5 mm scale Dimensions (mm are the original dimensions) Unit A max 0.32 nom min 0.28 mm A1 0.03 b D E e1 0.25 0.325 0.625 0.23 0.275 0.575 0.4 L 0.15 0.13 Note 1. The marking bar indicates the cathode. Outline version sod962-2_po References IEC JEDEC JEITA European projection Issue date 13-07-12 13-07-17 SOD962-2 Fig. 10. Package outline DSN0603-2 (SOD962-2) PESD24VF1BSF Product data sheet All information provided in this document is subject to legal disclaimers. 11 December 2015 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 12 PESD24VF1BSF NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 12. Soldering Footprint information for reflow soldering of leadless ultra small package; 2 terminals SOD962-2 0.85 0.4 0.4 R0.025 (8×) 0.24 (2×) 0.14 (2×) 0.2 (2×) solder land solder land plus solder paste solder paste deposit solder resist Dimensions in mm sod962-2_fr Fig. 11. Reflow soldering footprint for DSN0603-2 (SOD962-2) PESD24VF1BSF Product data sheet All information provided in this document is subject to legal disclaimers. 11 December 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 12 PESD24VF1BSF NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode 13. Revision history Table 7. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PESD24VF1BSF v.1 20151211 Product data sheet - - PESD24VF1BSF Product data sheet All information provided in this document is subject to legal disclaimers. 11 December 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 12 PESD24VF1BSF NXP Semiconductors Ultra low capacitance bidirectional ESD protection diode In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 14. 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This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 11 December 2015 © NXP Semiconductors N.V. 2015. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 1 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................2 9 Characteristics ....................................................... 3 10 Application information .........................................6 11 Package outline ..................................................... 7 12 Soldering ................................................................ 8 13 Revision history ..................................................... 9 14 14.1 14.2 14.3 14.4 Legal information .................................................10 Data sheet status ............................................... 10 Definitions ...........................................................10 Disclaimers .........................................................10 Trademarks ........................................................ 11 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 11 December 2015 PESD24VF1BSF Product data sheet All information provided in this document is subject to legal disclaimers. 11 December 2015 © NXP Semiconductors N.V. 2015. All rights reserved 12 / 12