Data Sheet

PESD12VV1BL
Very low capacitance bidirectional ESD protection diode
Rev. 2 — 18 March 2013
Product data sheet
1. Product profile
1.1 General description
Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode
designed to protect one signal line from the damage caused by ESD and other transients.
The device is housed in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted
Device (SMD) plastic package.
1.2 Features and benefits




Bidirectional ESD protection of one line
Low diode capacitance Cd = 17 pF
Rated peak pulse power: PPPM = 290 W
Ultra low leakage current IRM < 1 nA




ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); IPPM = 7.8 A
AEC-Q101 qualified
1.3 Applications
 Computers and peripherals
 Audio and video equipment
 Cellular handsets and accessories
 Portable electronics
 Communication systems
1.4 Quick reference data
Table 1.
Quick reference data
Tamb = 25 C unless otherwise specified.
Symbol
Parameter
VRWM
reverse standoff voltage
Cd
diode capacitance
Conditions
f = 1 MHz; VR = 0 V
Min
Typ
Max
Unit
-
-
12
V
-
17
25
pF
2. Pinning information
Table 2.
Pinning
Pin
Description
1
cathode
2
cathode
Simplified outline
1
2
Graphic symbol
1
2
sym045
Transparent
top view
PESD12VV1BL
NXP Semiconductors
Very low capacitance bidirectional ESD protection diode
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
PESD12VV1BL DFN1006-2
Description
Version
leadless ultra small plastic package; 2 terminals;
body 1.0  0.6  0.5 mm
SOD882
4. Marking
Table 4.
Marking codes
Type number
Marking code
PESD12VV1BL
MW
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
PPPM
rated peak pulse power
Min
Max
Unit
[1]
-
290
W
IPPM
rated peak pulse current
[1]
-
7.8
A
Tj
junction temperature
-
150
C
Tamb
ambient temperature
55
+150
C
Tstg
storage temperature
65
+150
C
[1]
Conditions
tp = 8/20 s
Device stressed with ten non-repetitive current pulses (8/20 s exponential decay waveform according to
IEC 61000-4-5 and IEC 61643-321).
Table 6.
ESD maximum ratings
Tamb = 25 C unless otherwise specified.
Symbol
VESD
[1]
Product data sheet
Conditions
electrostatic
discharge voltage
Min
Max
Unit
-
30
kV
machine model
-
400
V
MIL-STD-883
(human body model)
-
10
kV
IEC 61000-4-2
(contact discharge)
[1]
Device stressed with ten non-repetitive ESD pulses.
Table 7.
PESD12VV1BL
Parameter
ESD standards compliance
Standard
Conditions
IEC 61000-4-2; level 4 (ESD)
> 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3B (human body model)
> 8 kV
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 18 March 2013
© NXP B.V. 2013. All rights reserved.
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PESD12VV1BL
NXP Semiconductors
Very low capacitance bidirectional ESD protection diode
001aaa631
IPP
001aaa630
120
100 %
90 %
100 % IPP; 8 μs
IPP
(%)
80
e−t
50 % IPP; 20 μs
40
10 %
0
10
20
30
30 ns
40
t (μs)
Fig 1.
t
tr = 0.7 ns to 1 ns
0
60 ns
8/20 s pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
6. Characteristics
Table 8.
Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Min
Typ
Max
Unit
VRWM
reverse standoff
voltage
-
-
12
V
IRM
reverse leakage current VRWM = 12 V
-
<1
10
nA
VBR
breakdown voltage
IR = 5 mA
14.6
15.7
16.8
V
Cd
diode capacitance
f = 1 MHz; VR = 0 V
-
17
25
pF
VCL
clamping voltage
IPP = 1 A
[1]
-
-
22
V
IPPM = 7.8 A
[1]
-
-
38
V
IR = 10 A
[2]
-
0.7
-

rdyn
PESD12VV1BL
Product data sheet
Conditions
dynamic resistance
[1]
Device stressed with 8/20 s exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321.
[2]
Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse;
ANS/IESD STM5-1-2008.
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Rev. 2 — 18 March 2013
© NXP B.V. 2013. All rights reserved.
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PESD12VV1BL
NXP Semiconductors
Very low capacitance bidirectional ESD protection diode
aaa-002723
103
&G
S)
PPP
(W)
DDD
102
10
1
10-4
10-3
10-2
tp (s)
Tamb = 25 C
Fig 3.
959
f = 1 MHz; Tamb = 25 C
Rated peak pulse power as a function of
square pulse duration; typical values
Fig 4.
Diode capacitance as a function of reverse
voltage; typical values
IPPM
IPP
-VCL -VBR -VRWM
IR
IRM
-IRM
-IR
VRWM VBR VCL
-
+
-IPP
-IPPM
Fig 5.
006aab325
V-I characteristics for a bidirectional ESD protection diode
PESD12VV1BL
Product data sheet
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Rev. 2 — 18 March 2013
© NXP B.V. 2013. All rights reserved.
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PESD12VV1BL
NXP Semiconductors
Very low capacitance bidirectional ESD protection diode
ESD TESTER
Rd
450 Ω
RG 223/U
50 Ω coax
4 GHz DIGITAL
OSCILLOSCOPE
10x
ATTENUATOR
Cs
50 Ω
DUT
(DEVICE
UNDER
TEST)
IEC 61000-4-2 network
Cs = 150 pF; Rd = 330 Ω
vertical scale = 20 V/div
horizontal scale = 50 ns/div
vertical scale = 2 kV/div
horizontal scale = 10 ns/div
GND
GND
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
vertical scale = 20 V/div
horizontal scale = 50 ns/div
vertical scale = 2 kV/div
horizontal scale = 10 ns/div
GND
GND
unclamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
Fig 6.
clamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
aaa-002726
ESD clamping test setup and waveforms
PESD12VV1BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 18 March 2013
© NXP B.V. 2013. All rights reserved.
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PESD12VV1BL
NXP Semiconductors
Very low capacitance bidirectional ESD protection diode
7. Application information
The device is designed for the protection of one bidirectional data or signal line from surge
pulses and ESD damage. The device is suitable on lines where the signal polarities are
both, positive and negative with respect to ground.
line to be protected
ESD protection diode
GND
aaa-002737
Fig 7.
Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. Minimize the path length between the device and the protected line.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Use ground planes whenever possible. For multilayer PCBs, use ground vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PESD12VV1BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 18 March 2013
© NXP B.V. 2013. All rights reserved.
6 of 12
PESD12VV1BL
NXP Semiconductors
Very low capacitance bidirectional ESD protection diode
9. Package outline
0.50
0.46
0.62
0.55
2
0.30
0.22
0.65
0.30
0.22
1
0.55
0.47
cathode marking on top side (if applicable)
Dimensions in mm
Fig 8.
1.02
0.95
03-04-17
Package outline DFN1006-2 (SOD882)
10. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
10000
PESD12VV1BL
[1]
PESD12VV1BL
Product data sheet
DFN1006-2
(SOD882)
4 mm pitch, 8 mm tape and reel
-315
For further information and the availability of packing methods, see Section 14.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 18 March 2013
© NXP B.V. 2013. All rights reserved.
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PESD12VV1BL
NXP Semiconductors
Very low capacitance bidirectional ESD protection diode
11. Soldering
1.3
0.7
R0.05 (8×)
solder lands
0.6 0.7 0.8
(2×) (2×) (2×)
0.9
solder resist
solder paste
occupied area
0.3
(2×)
Dimensions in mm
0.4
(2×)
0.5
(2×)
sod882_fr
Reflow soldering is the only recommended soldering method.
Fig 9.
PESD12VV1BL
Product data sheet
Reflow soldering footprint DFN1006-2 (SOD882)
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 18 March 2013
© NXP B.V. 2013. All rights reserved.
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PESD12VV1BL
NXP Semiconductors
Very low capacitance bidirectional ESD protection diode
12. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PESD12VV1BL v.2
20130318
Product data sheet
-
PESD12VV1BL v.1
-
-
Modifications:
PESD12VV1BL v.1
PESD12VV1BL
Product data sheet
•
Figure 3 corrected
20120403
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 18 March 2013
© NXP B.V. 2013. All rights reserved.
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PESD12VV1BL
NXP Semiconductors
Very low capacitance bidirectional ESD protection diode
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
PESD12VV1BL
Product data sheet
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 18 March 2013
© NXP B.V. 2013. All rights reserved.
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Very low capacitance bidirectional ESD protection diode
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PESD12VV1BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 18 March 2013
© NXP B.V. 2013. All rights reserved.
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PESD12VV1BL
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Very low capacitance bidirectional ESD protection diode
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 6
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6
Quality information . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Packing information . . . . . . . . . . . . . . . . . . . . . 7
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2013.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 18 March 2013
Document identifier: PESD12VV1BL