Data Sheet

SO
D3
23
F
PESD36VS1UJ
Unidirectional ESD protection diode
16 September 2015
Product data sheet
1. General description
Unidirectional ElectroStatic Discharge (ESD) protection diode in a flat lead very small
SOD323F Surface-Mounted Device (SMD) plastic package designed to protect one
signal line from the damage caused by ESD and other transients.
2. Features and benefits
•
•
•
•
•
•
ESD protection of one line
ESD protection up to 30 kV
IEC 61000-4-5; (surge); IPPM = 2.5 A
Rated peak pulse power: PPPM = 150 W
Ultra low leakage current: IRM < 1 nA
AEC-Q101 qualified
3. Applications
•
•
•
•
•
computers and peripherals
audio and video equipment
cellular handsets and accessories
portable electronics
communication systems
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRWM
reverse standoff
voltage
Tamb = 25 °C
-
-
36
V
Cd
diode capacitance
f = 1 MHz; VR = 0 V; Tamb = 25 °C
-
18
30
pF
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PESD36VS1UJ
NXP Semiconductors
Unidirectional ESD protection diode
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
K
cathode[1]
2
A
anode
Simplified outline
1
Graphic symbol
1
2
sym035
SOD323F
[1]
2
The marking bar indicates the cathode.
6. Ordering information
Table 3.
Ordering information
Type number
Package
PESD36VS1UJ
Name
Description
Version
SOD323F
plastic surface-mounted package; 2 leads
SOD323F
7. Marking
Table 4.
Marking codes
Type number
Marking code
PESD36VS1UJ
BG
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
PPPM
peak pulse power
tp = 8/20 µs
[1][2]
-
150
W
IPPM
peak pulse current
[1][2]
-
2.5
A
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
ESD maximum ratings
VESD
electrostatic discharge voltage
[1]
[2]
[3]
PESD36VS1UJ
Product data sheet
IEC 61000-4-2; contact discharge
[2][3]
-
30
kV
IEC 61000-4-2; air discharge
[2]
-
30
kV
Device stressed with ten non-repetitive ESD pulses (8/20 µs exponential decay waveform according to
IEC 61000-4-5 and IEC 61643-321).
Measured from pin 1 to pin 2.
Device stressed with ten non-repetitive ESD pulses.
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PESD36VS1UJ
NXP Semiconductors
Unidirectional ESD protection diode
001aaa631
001aaa630
120
IPP
100 %
100 % IPP; 8 µs
IPP
(%)
80
90 %
e- t
50 % IPP; 20 µs
40
10 %
0
Fig. 1.
0
10
20
30
t (µs)
t
tr = 0.6 ns to 1 ns
40
30 ns
60 ns
8/20 µs pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
Fig. 2.
ESD pulse waveform according to
IEC 61000-4-2
9. Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRWM
reverse standoff
voltage
Tamb = 25 °C
-
-
36
V
IRM
reverse leakage
current
VRWM = 36 V; Tamb = 25 °C
-
1
10
nA
VBR
breakdown voltage
IR = 2 mA; Tamb = 25 °C
38.2
39
39.8
V
Cd
diode capacitance
f = 1 MHz; VR = 0 V; Tamb = 25 °C
-
18
30
pF
VCL
clamping voltage
IPP = 1 A; Tamb = 25 °C
[1][2]
-
-
58
V
IPPM = 2.5 A; Tamb = 25 °C
[1][2]
-
-
80
V
Tamb = 25 °C
[3]
-
9.5
-
Ω
Rdyn
dynamic resistance
[1]
[2]
[3]
PESD36VS1UJ
Product data sheet
Device stressed with 8/20 µs exponential decay waveform according to IEC 61000-4-5 and IEC
61643-321.
Measured from pin 1 to pin 2.
Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008.
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PESD36VS1UJ
NXP Semiconductors
Unidirectional ESD protection diode
aaa-002437
102
PPPM
(W)
006aab321
1.2
PPPM
PPPM(25°C)
0.8
10
0.4
1
10-1
1
tp (ms)
Tamb = 25 °C
Fig. 3.
0
10
Fig. 4.
Rated peak pulse power as a function of square
pulse duration; maximum values
0
50
100
Tj (°C)
200
Relative variation of rated peak pulse power
as a function of junction temperature; typical
values
I
aaa-017641
20
150
Cd
(pF)
16
12
- VCL - VBR - VRWM
V
- IRM
- IR
8
-
4
0
0
8
16
24
32
VR (V)
40
- IPP
- IPPM
f = 1 MHz; Tamb = 25 °C
Fig. 5.
+
P-N
Diode capacitance as a function of reverse
voltage; typical values
PESD36VS1UJ
Product data sheet
Fig. 6.
V-I characteristics for a unidirectional ESD
protection diode
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PESD36VS1UJ
NXP Semiconductors
Unidirectional ESD protection diode
ESD TESTER
4 GHz DIGITAL
OSCILLOSCOPE
RG 223/U
50 Ω coax
Rd
40 dB
ATTENUATOR
Cs
50 Ω
DUT
(DEVICE
UNDER
TEST)
IEC 61000-4-2 ed.2
Cs = 150 pF; Rd = 330 Ω
10
2
V
(kV) 8
V
(kV) 0
6
-2
4
-4
2
-6
0
-8
-2
-10
0
10
20
30
40
50
t (ns)
60
70
-10
-10
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
0
10
20
30
40
50
t (ns)
60
70
unclamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
180
60
VCL
(V)
VCL
(V)
140
20
100
-20
60
-60
20
-20
-10
10
30
50
70
t (ns)
-100
-10
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
10
30
50
t (ns)
70
clamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
aaa-018113
Fig. 7.
ESD clamping test setup and waveforms
PESD36VS1UJ
Product data sheet
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PESD36VS1UJ
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Unidirectional ESD protection diode
10. Application information
The device is designed for the protection of one unidirectional data line from surge pulses
and ESD damage. The device is suitable on lines where the signal polarities are either
positive or negative with respect to ground. The device provides a surge capability of 150
W for an 8/20 µs waveform.
line to be protected
(positive signal polarity)
line to be protected
(negative signal polarity)
ESD protection diode
ESD protection diode
GND
GND
unidirectional protection of one line
aaa-002440
Fig. 8.
Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1.
2.
3.
4.
5.
Place the device as close to the input terminal or connector as possible.
Minimize the path length between the device and the protected line.
Keep parallel signal paths to a minimum.
Avoid running protected conductors in parallel with unprotected conductors.
Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Use ground planes whenever possible. For multilayer PCBs, use ground vias.
PESD36VS1UJ
Product data sheet
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PESD36VS1UJ
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Unidirectional ESD protection diode
11. Package outline
Plastic surface-mounted package; 2 leads
SOD323F
D
E
A
A
c
Lp
Lp
HE
0
1
2 mm
scale
1
DIMENSIONS (mm are the original dimensions)
2
bp
w
M
A
(1)
A
bp
c
D
E
HE
Lp
w
mm
0.80
0.65
0.40
0.25
0.25
0.10
1.8
1.6
1.35
1.15
2.7
2.3
0.5
0.3
0.1
Note
1. The marking bar indicates the cathode
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOD323F
Fig. 9.
UNIT
EUROPEAN
PROJECTION
JEITA
ISSUE DATE
04-09-13
06-03-16
SC-90
Package outline SOD323F
12. Soldering
3.05
2.2
2.1
solder lands
solder resist
1.65 0.95
0.5 (2×)
0.6 (2×)
solder paste
occupied area
0.5
(2×)
0.6
(2×)
Dimensions in mm
sod323f_fr
Fig. 10. Reflow soldering footprint for SOD323F
PESD36VS1UJ
Product data sheet
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Unidirectional ESD protection diode
13. Revision history
Table 7.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PESD36VS1UJ v.1
20150916
Product data sheet
-
-
PESD36VS1UJ
Product data sheet
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PESD36VS1UJ
NXP Semiconductors
Unidirectional ESD protection diode
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
14. Legal information
14.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
14.2 Definitions
Preview — The document is a preview version only. The document is still
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Draft — The document is a draft version only. The content is still under
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information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
14.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
PESD36VS1UJ
Product data sheet
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
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customer’s applications and products planned, as well as for the planned
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associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
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purchase of NXP Semiconductors products by customer.
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Unidirectional ESD protection diode
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grant, conveyance or implication of any license under any copyrights, patents
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Export control — This document as well as the item(s) described herein
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Translations — A non-English (translated) version of a document is for
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between the translated and English versions.
14.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PESD36VS1UJ
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PESD36VS1UJ
NXP Semiconductors
Unidirectional ESD protection diode
15. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................2
9
Characteristics ....................................................... 3
10
Application information .........................................6
11
Package outline ..................................................... 7
12
Soldering ................................................................ 7
13
Revision history ..................................................... 8
14
14.1
14.2
14.3
14.4
Legal information ...................................................9
Data sheet status ................................................. 9
Definitions .............................................................9
Disclaimers ...........................................................9
Trademarks ........................................................ 10
© NXP Semiconductors N.V. 2015. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 16 September 2015
PESD36VS1UJ
Product data sheet
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