Data Sheet

PESD5V0F1BRSF
Extremely low capacitance bidirectional ESD protection diode
Rev. 1 — 13 February 2013
Product data sheet
1. Product profile
1.1 General description
Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in
a DSN0603-2 (SOD962) leadless ultra small Surface-Mounted Device (SMD) package
designed to protect one signal line from the damage caused by ESD and other transients.
1.2 Features and benefits





Bidirectional ESD protection of one line
Extremely low diode capacitance Cd = 0.25 pF
Minimized capacitance variation over voltage
ESD protection up to 10 kV according to IEC 61000-4-2
Ultra small SMD package
1.3 Applications




Cellular handsets and accessories
Portable electronics
Communication systems
Computers and peripherals
1.4 Quick reference data
Table 1.
Quick reference data
Tamb = 25 C unless otherwise specified.
Symbol
Parameter
VRWM
reverse standoff voltage
Cd
diode capacitance
Conditions
Min
f = 1 MHz; VR = 0 V
Typ
Max
Unit
-
-
5
V
0.20
0.25
0.30
pF
2. Pinning information
Table 2.
Pinning
Pin
Description
1
cathode (diode 1)
2
cathode (diode 2)
Simplified outline
1
2
Graphic symbol
1
2
sym045
Transparent
top view
PESD5V0F1BRSF
NXP Semiconductors
Extremely low capacitance bidirectional ESD protection diode
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
PESD5V0F1BRSF
Description
Version
DSN0603-2 leadless ultra small package; 2 terminals;
body 0.6  0.3  0.3 mm
SOD962
4. Marking
Table 4.
Marking codes
Type number
Marking code
PESD5V0F1BRSF
F
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
PPPM
rated peak pulse power
tp = 8/20 s
[1]
-
28
W
IPPM
rated peak pulse current
tp = 8/20 s
[1]
-
2.2
A
Tj
junction temperature
-
150
C
Tamb
ambient temperature
55
+150
C
Tstg
storage temperature
65
+150
C
[1]
Non-repetitive current pulse 8/20 s exponentially decaying waveform according to IEC61000-4-5.
Table 6.
Symbol
VESD
ESD maximum ratings
Parameter
Conditions
electrostatic
discharge voltage
Min
Max
Unit
IEC 61000-4-2 (contact discharge)
[1]
-
10
kV
IEC 61000-4-2 (air discharge)
[1]
-
15
kV
-
10
kV
MIL-STD-883 (human body model)
[1]
Device stressed with ten non-repetitive ESD pulses.
Table 7.
PESD5V0F1BRSF
Product data sheet
ESD standards compliance
Standard
Conditions
IEC 61000-4-2, level 4 (ESD)
> 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3B (human body model)
> 8 kV
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 February 2013
© NXP B.V. 2013. All rights reserved.
2 of 12
PESD5V0F1BRSF
NXP Semiconductors
Extremely low capacitance bidirectional ESD protection diode
001aaa631
IPP
001aaa630
120
100 %
90 %
100 % IPP; 8 μs
IPP
(%)
80
e−t
50 % IPP; 20 μs
40
10 %
0
10
20
30
30 ns
40
t (μs)
Fig 1.
t
tr = 0.7 ns to 1 ns
0
60 ns
8/20 s pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
6. Characteristics
Table 8.
Characteristics
Tamb = 25 C unless otherwise specified.
PESD5V0F1BRSF
Product data sheet
Symbol
Parameter
VRWM
reverse standoff
voltage
Conditions
IRM
reverse leakage
current
VRWM = 5 V
VCL
clamping voltage
IPP = 0.5 A
IPPM = 2.2 A
VBR
breakdown voltage
Cd
diode capacitance
f = 1 MHz; VR = 0 V
rdyn
dynamic resistance
IR = 10 A
Min
Typ
Max
Unit
-
-
5
V
-
1
100
nA
[1]
-
-
10
V
[1]
-
-
12.8
V
6
-
10
V
0.20
0.25
0.30
pF
-
1.3
-

IR = 1 mA
[2]
[1]
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
[2]
Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse;
ANS/IESD STM5.1-2008.
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Rev. 1 — 13 February 2013
© NXP B.V. 2013. All rights reserved.
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PESD5V0F1BRSF
NXP Semiconductors
Extremely low capacitance bidirectional ESD protection diode
IPPM
IPP
018aaa061
1.0
Cd
(pF)
0.8
0.6
IR
IRM
-VCL -VBR -VRWM
-IRM
-IR
0.4
0.2
VRWM VBR VCL
-
0.0
0.0
1.0
2.0
3.0
4.0
+
-IPP
5.0
-IPPM
VR (V)
006aab325
f = 1 MHz; Tamb = 25 C
Fig 3.
Diode capacitance as a function of reverse
voltage; typical values
Fig 4.
V-I characteristics for a bidirectional
ESD protection diode
DDD
,33
$
9&/9
tp = 100 ns; Transmission Line Pulse (TLP)
Fig 5.
Dynamic resistance; typical values
PESD5V0F1BRSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 February 2013
© NXP B.V. 2013. All rights reserved.
4 of 12
PESD5V0F1BRSF
NXP Semiconductors
Extremely low capacitance bidirectional ESD protection diode
*,
./
0//001
..0
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7!$"933!&97
:$9, "33!& 97
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2 34'!56%
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Fig 6.
34'!6%
'23!#7!8$4
!"#$%
DDD
ESD clamping test setup and waveforms
PESD5V0F1BRSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 February 2013
© NXP B.V. 2013. All rights reserved.
5 of 12
PESD5V0F1BRSF
NXP Semiconductors
Extremely low capacitance bidirectional ESD protection diode
7. Application information
The PESD5V0F1BRSF is designed for the protection of one data or signal line from surge
pulses and ESD damage. The device is suitable on lines where the signal polarities are
both, positive and negative with respect to ground. It provides protection against surges
with up to 28 W per line.
OLQHWREHSURWHFWHG
(6'SURWHFWLRQGLRGH
*1'
DDD
Fig 7.
Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. Minimize the path length between the device and the protected line.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Use ground planes whenever possible. For multilayer PCBs, use ground vias.
PESD5V0F1BRSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 February 2013
© NXP B.V. 2013. All rights reserved.
6 of 12
PESD5V0F1BRSF
NXP Semiconductors
Extremely low capacitance bidirectional ESD protection diode
8. Package outline
'LPHQVLRQVLQPP
Fig 8.
Package outline DSN0603-2 (SOD962)
9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
9000
PESD5V0F1BRSF
[1]
PESD5V0F1BRSF
Product data sheet
DSN0603-2 2 mm pitch, 8 mm tape and reel
(SOD962)
-315
For further information and the availability of packing methods, see Section 13.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 February 2013
© NXP B.V. 2013. All rights reserved.
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PESD5V0F1BRSF
NXP Semiconductors
Extremely low capacitance bidirectional ESD protection diode
10. Soldering
Footprint information for reflow soldering of leadless ultra small package; 2 terminals
SOD962
0.85
0.4
0.4
R0.025 (8×)
0.22
(2×)
0.12
(2×)
0.2
(2×)
solder land
solder land plus solder paste
solder paste deposit
solder resist
Dimensions in mm
Fig 9.
sod962_fr
Reflow soldering footprint DSN0603-2 (SOD962)
PESD5V0F1BRSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 February 2013
© NXP B.V. 2013. All rights reserved.
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PESD5V0F1BRSF
NXP Semiconductors
Extremely low capacitance bidirectional ESD protection diode
11. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PESD5V0F1BRSF v.1
20130213
Product data sheet
-
-
PESD5V0F1BRSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 February 2013
© NXP B.V. 2013. All rights reserved.
9 of 12
PESD5V0F1BRSF
NXP Semiconductors
Extremely low capacitance bidirectional ESD protection diode
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
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full data sheet shall prevail.
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customer have explicitly agreed otherwise in writing. In no event however,
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Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
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changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
PESD5V0F1BRSF
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
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Applications — Applications that are described herein for any of these
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representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
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damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
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testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
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All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 February 2013
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Extremely low capacitance bidirectional ESD protection diode
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
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In the event that customer uses the product for design-in and use in
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use of the product for automotive applications beyond NXP Semiconductors’
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12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PESD5V0F1BRSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 February 2013
© NXP B.V. 2013. All rights reserved.
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Extremely low capacitance bidirectional ESD protection diode
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Packing information . . . . . . . . . . . . . . . . . . . . . 7
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2013.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 13 February 2013
Document identifier: PESD5V0F1BRSF