Data Sheet

PESD5V0H1BSF
Ultra low capacitance bidirectional ESD protection diode
7 May 2015
Product data sheet
1. General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode,
part of the TrEOS Protection family. This device is housed in a DSN0603-2 (SOD962)
leadless ultra small Surface-Mounted Device (SMD) package. The TrEOS Protection
family is optimized for safeguarding very sensitive high-speed interfaces against ESD
pulses with a high level of robustness.
2. Features and benefits
•
•
•
•
Bidirectional ESD protection of one line
Extremely low diode capacitance:
– Cd = 0.15 pF at 1 MHz
– Cd = 0.13 pF at 2.5 GHz
ESD protection up to ±15 kV according to IEC 61000-4-2
Ultra small SMD package
3. Applications
ESD and surge protection for:
•
•
•
ultra high-speed datalines
very sensitive interface lines
generic interface lines
in portable electronics, communication, consumer and computing devices.
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Cd
diode capacitance
f = 1 MHz; VR = 0 V; Tamb = 25 °C
-
0.15
0.19
pF
f = 2.5 GHz; VR = 0 V; Tamb = 25 °C
-
0.13
-
pF
Tamb = 25 °C
-
-
5
V
VRWM
reverse standoff
voltage
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PESD5V0H1BSF
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Ultra low capacitance bidirectional ESD protection diode
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
K1
cathode (diode 1)
2
K2
cathode (diode 2)
Simplified outline
1
2
Graphic symbol
1
2
sym045
Transparent
top view
DSN0603-2 (SOD962-2)
6. Ordering information
Table 3.
Ordering information
Type number
PESD5V0H1BSF
Package
Name
Description
Version
DSN0603-2
Leadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3
mm
SOD962-2
7. Marking
Table 4.
Marking codes
Type number
Marking code
PESD5V0H1BSF
G
PESD5V0H1BSF
Product data sheet
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Ultra low capacitance bidirectional ESD protection diode
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
IPPM
rated peak pulse current
tp = 8/20 µs
-
7
A
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-40
125
°C
Tstg
storage temperature
-65
150
°C
[1]
ESD maximum ratings
VESD
electrostatic discharge voltage
[1]
[2]
IEC 61000-4-2; contact discharge
[2]
-
15
kV
IEC 61000-4-2; air discharge
[2]
-
15
kV
According to IEC 61000-4-5 and IEC 61643-321.
Device stressed with ten non-repetitive ESD pulses.
001aaa631
001aaa630
120
IPP
100 %
100 % IPP; 8 µs
IPP
(%)
80
90 %
e- t
50 % IPP; 20 µs
40
10 %
0
Fig. 1.
0
10
20
30
t (µs)
8/20 µs pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
PESD5V0H1BSF
Product data sheet
tr = 0.6 ns to 1 ns
40
t
30 ns
60 ns
Fig. 2.
ESD pulse waveform according to
IEC 61000-4-2
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Ultra low capacitance bidirectional ESD protection diode
9. Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRWM
reverse standoff
voltage
Tamb = 25 °C
-
-
5
V
Cd
diode capacitance
f = 1 MHz; VR = 0 V; Tamb = 25 °C
-
0.15
0.19
pF
f = 2.5 GHz; VR = 0 V; Tamb = 25 °C
-
0.13
-
pF
6
10
-
V
VBR
breakdown voltage
IR = 1 mA; Tamb = 25 °C
VCL
clamping voltage
Tamb = 25 °C; IPPM = 7 A; tp = 8/20 µs
[1]
-
-
5
V
Tamb = 25 °C; IPP = 8 A; tp = TLP
[2]
-
4.4
-
V
Tamb = 25 °C; IPP = 16 A; tp = TLP
[2]
-
6.3
-
V
[2]
-
0.25
-
Ω
-
1
50
nA
Rdyn
dynamic resistance
Tamb = 25 °C; IR = 10 A
IRM
reverse leakage
current
VRWM = 5 V; Tamb = 25 °C
[1]
[2]
According to IEC 61000-4-5 and IEC 61643-321.
Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse; ANSI / ESD
STM5.5.1-2008.
IPPM
IPP
aaa-016870
0.20
Cd
(pF)
0.16
-VCL -VBR -VRWM
0.12
IR
IRM
-IRM
-IR
VRWM VBR VCL
-
0.08
0.04
+
0.00
-IPP
-IPPM
Fig. 3.
V-I characteristics for a bidirectional ESD
protection diode
PESD5V0H1BSF
Product data sheet
-5
-3
-1
1
006aab325
3
VR (V)
5
f = 1 MHz; Tamb = 25 °C
Fig. 4.
Diode capacitance as a function of reverse
voltage; typical values
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Ultra low capacitance bidirectional ESD protection diode
aaa-016871
0.18
aaa-016872
2
Cd
(pF)
S21
(dB)
0.12
-2
0.06
-6
0.00
Fig. 5.
0
2
4
6
f (GHz)
-10
10-2
8
Diode capacitance as a function of frequency;
typical values
Fig. 6.
1
10
102
aaa-016874
0
IPP
(A)
f (GHz)
Insertion loss; typical values
aaa-016873
20
10-1
IPP
(A)
15
-5
Rdyn = 0.25 Ω
10
-10
Rdyn = 0.25 Ω
5
0
-15
0
5
10
15
VCL (V)
-20
-20
20
tp = 100 ns; Transmission Line Pulse (TLP)
Fig. 7.
Dynamic resistance with positive clamping
voltage
PESD5V0H1BSF
Product data sheet
-15
-10
-5
VCL (V)
0
tp = 100 ns; Transmission Line Pulse (TLP)
Fig. 8.
Dynamic resistance with negative clamping
voltage
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Ultra low capacitance bidirectional ESD protection diode
ESD TESTER
4 GHz DIGITAL
OSCILLOSCOPE
RG 223/U
50 Ω coax
Rd
40 dB
ATTENUATOR
Cs
50 Ω
DUT
(DEVICE
UNDER
TEST)
IEC 61000-4-2 ed.2
Cs = 150 pF; Rd = 330 Ω
10
2
V
(kV) 8
V
(kV) 0
6
-2
4
-4
2
-6
0
-8
-2
-10
0
10
20
30
40
50
t (ns)
60
-10
-10
70
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
0
10
20
30
40
50
t (ns)
60
70
unclamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
aaa-003952
Fig. 9.
ESD clamping test setup and waveforms
aaa-016875
140
VCL
(V)
VCL
(V)
100
-20
60
-60
VCL at 30 ns = 5.7 V
20
-20
-10
aaa-016876
20
0
10
20
30
40
50
-100
60
t (ns)
-140
-10
70
Fig. 10. Clamped +8 kV pulse waveform (IEC 61000-4-2
network)
PESD5V0H1BSF
Product data sheet
VCL at 30 ns = 4.2 V
0
10
20
30
40
50
60
t (ns)
70
Fig. 11. Clamped -8 kV pulse waveform (IEC 61000-4-2
network)
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Ultra low capacitance bidirectional ESD protection diode
10. Application information
The device is designed for the protection of one bidirectional data line from surge pulses
and ESD damage. The device is suitable on lines where the signal polarities are both
positive and negative with respect to ground. The device is not designed to be used on
lines connected to a DC supply.
line to be protected
ESD protection diode
GND
aaa-002737
Fig. 12. Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1.
2.
3.
4.
5.
Place the device as close to the input terminal or connector as possible.
Minimize the path length between the device and the protected line.
Keep parallel signal paths to a minimum.
Avoid running protected conductors in parallel with unprotected conductors.
Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Use ground planes whenever possible. For multilayer PCBs, use ground vias.
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Product data sheet
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11. Package outline
Leadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3 mm
SOD962-2
L
1
2
b
e1
A
A1
E
D
(1)
0
0.5 mm
scale
Dimensions (mm are the original dimensions)
Unit
A
max 0.32
nom
min 0.28
mm
A1
0.03
b
D
E
e1
0.25 0.325 0.625
0.23 0.275 0.575
0.4
L
0.15
0.13
Note
1. The marking bar indicates the cathode.
Outline
version
sod962-2_po
References
IEC
JEDEC
JEITA
European
projection
Issue date
13-07-12
13-07-17
SOD962-2
Fig. 13. Package outline DSN0603-2 (SOD962-2)
PESD5V0H1BSF
Product data sheet
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Ultra low capacitance bidirectional ESD protection diode
12. Soldering
Footprint information for reflow soldering of leadless ultra small package; 2 terminals
SOD962-2
0.85
0.4
0.4
R0.025 (8×)
0.24
(2×)
0.14
(2×)
0.2
(2×)
solder land
solder land plus solder paste
solder paste deposit
solder resist
Dimensions in mm
sod962-2_fr
Fig. 14. Reflow soldering footprint for DSN0603-2 (SOD962-2)
PESD5V0H1BSF
Product data sheet
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13. Revision history
Table 7.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PESD5V0H1BSF v.2
20150507
Product data sheet
-
PESD5V0H1BSF v.1
Modifications:
•
PESD5V0H1BSF v.1
20150429
-
-
PESD5V0H1BSF
Product data sheet
Product status changed
Preliminary data sheet
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Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
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PESD5V0H1BSF
Product data sheet
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15. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Characteristics ....................................................... 4
10
Application information .........................................7
11
Package outline ..................................................... 8
12
Soldering ................................................................ 9
13
Revision history ................................................... 10
14
14.1
14.2
14.3
14.4
Legal information .................................................11
Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12
© NXP Semiconductors N.V. 2015. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 7 May 2015
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