Data Sheet

SO
T8
83
B
PESD5V0V2BMB
Very low capacitance bidirectional ESD protection diodes
17 August 2015
Product data sheet
1. General description
Two bidirectional ElectroStatic Discharge (ESD) protection diodes designed to protect
two signal lines from damage caused by ESD and other transients. The device is housed
in a DFN1006B-3 (SOT883B) leadless ultra small Surface-Mounted Device (SMD) plastic
package.
2. Features and benefits
•
•
•
•
•
•
Bidirectional ESD protection of two lines
Ultra small SMD plastic package
ESD protection up to 30 kV; IEC 61000-4-2
IPPM = 9 A; IEC 61000-4-5 (surge)
Ultra low leakage current: IRM = 1 nA
AEC-Q101 qualified
3. Applications
•
•
•
•
•
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
Communication systems
Portable electronics
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRWM
reverse standoff
voltage
Tamb = 25 °C
-
-
5
V
Cd
diode capacitance
f = 1 MHz; VR = 0 V; Tamb = 25 °C
-
18
20
pF
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Very low capacitance bidirectional ESD protection diodes
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
K1
cathode
2
K2
cathode
3
K3
common cathode
Simplified outline
Graphic symbol
1
1
3
3
2
2
Transparent
top view
006aab331
DFN1006B-3 (SOT883B)
6. Ordering information
Table 3.
Ordering information
Type number
PESD5V0V2BMB
Package
Name
Description
Version
DFN1006B-3
DFN1006B-3: leadless ultra small plastic package; 3
solder lands; body 1.0 x 0.6 x 0.37 mm
SOT883B
7. Marking
Table 4.
Marking codes
Type number
Marking code
PESD5V0V2BMB
00 11 01 00
PIN 1 INDICATION
READING DIRECTION
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac673
Fig. 1.
DFN1006B-3 (SOT883B) binary marking code description
PESD5V0V2BMB
Product data sheet
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Very low capacitance bidirectional ESD protection diodes
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
IPPM
rated peak pulse current
tp = 8/20 μs
-
9
A
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
[1][2]
ESD maximum ratings
VESD
electrostatic discharge voltage
[1]
[2]
[3]
IEC 61000-4-2; contact discharge
[1][3]
-
30
kV
IEC 61000-4-2; air discharge
[1][3]
-
30
kV
MIL-STD-883; human body model
[1]
-
10
kV
Measured from pin 1 or 2 to pin 3.
According to IEC 61000-4-5 and IEC 61643-321.
Device stressed with ten non-repetitive ESD pulses.
001aaa631
001aaa630
120
IPP
100 %
100 % IPP; 8 µs
IPP
(%)
80
90 %
e- t
50 % IPP; 20 µs
40
10 %
0
Fig. 2.
0
10
20
30
t (µs)
t
tr = 0.6 ns to 1 ns
40
30 ns
60 ns
8/20 µs pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
Fig. 3.
ESD pulse waveform according to
IEC 61000-4-2
9. Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRWM
reverse standoff
voltage
Tamb = 25 °C
-
-
5
V
IRM
reverse leakage
current
VRWM = 5 V; Tamb = 25 °C
-
1
10
nA
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Very low capacitance bidirectional ESD protection diodes
Symbol
Parameter
Conditions
VBR
breakdown voltage
IR = 5 mA; Tamb = 25 °C
Cd
diode capacitance
f = 1 MHz; VR = 0 V; Tamb = 25 °C
VCL
clamping voltage
IPP = 1 A; Tamb = 25 °C; tp = 8/20 μs
Rdyn
dynamic resistance
[1]
[2]
[3]
Min
Typ
Max
Unit
5.5
6.8
7.8
V
-
18
20
pF
[1][2]
-
8
9.5
V
IPPM = 9 A; Tamb = 25 °C; tp = 8/20 μs
[1][2]
-
11
12.5
V
IR = 10 A; Tamb = 25 °C
[1][3]
-
0.15
-
Ω
[1]
Measured from pin 1 or 2 to pin 3.
According to IEC 61000-4-5 and IEC 61643-321.
Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse; ANSI / ESD
STM5.5.1-2008.
aaa-019002
20
IPP
Cd
(pF)
16
12
IR
IRM
- VCL - VBR - VRWM
8
- IRM
- IR
VRWM VBR VCL
-
4
0
-5
-3
-1
1
3
VR (V)
- IPP
5
006aaa676
Fig. 5.
f = 1 MHz; Tamb = 25 °C
Fig. 4.
V-I characteristics for a bidirectional ESD
protection diode
Diode capacitance as a function of reverse
voltage; typical values
aaa-019004
30
I
(A)
aaa-019006
0
I
(A)
20
-10
10
-20
Rdyn: 0.15 Ω
0
0
4
Rdyn: 0.15 Ω
8
VCL (V)
-30
-12
12
tp = 100 ns; Transmission Line Pulse (TLP)
Fig. 6.
+
Dynamic resistance
PESD5V0V2BMB
Product data sheet
-8
-4
VCL (V)
0
tp = 100 ns; Transmission Line Pulse (TLP)
Fig. 7.
Dynamic resistance
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Very low capacitance bidirectional ESD protection diodes
ESD TESTER
4 GHz DIGITAL
OSCILLOSCOPE
RG 223/U
50 Ω coax
Rd
40 dB
ATTENUATOR
Cs
50 Ω
DUT
(DEVICE
UNDER
TEST)
IEC 61000-4-2 ed.2
Cs = 150 pF; Rd = 330 Ω
10
2
V
(kV) 8
V
(kV) 0
6
-2
4
-4
2
-6
0
-8
-2
-10
0
10
20
30
40
50
t (ns)
60
70
-10
-10
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
0
10
20
30
40
50
t (ns)
60
70
unclamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
aaa-003952
Fig. 8.
ESD clamping test setup and waveforms
aaa-019009
70
VCL
(V)
VCL
(V)
50
20
30
0
VCL at 30 ns = 8.5 V
10
-20
-10
-40
-30
-10
Fig. 9.
aaa-019010
40
10
30
50
t (ns)
-60
-10
70
Clamped +8 kV pulse waveform (IEC 61000-4-2
network)
PESD5V0V2BMB
Product data sheet
VCL at 30 ns = - 8.5 V
10
30
50
t (ns)
70
Fig. 10. Clamped -8 kV pulse waveform (IEC 61000-4-2
network)
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10. Application information
The device is designed for the protection of up to two bidirectional data lines from surge
pulses and ESD damage.
Fig. 11. Application diagram
signal lines
DUT
GND
006aab332
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1.
2.
3.
4.
5.
Place the device as close to the input terminal or connector as possible.
Minimize the path length between the device and the protected line.
Keep parallel signal paths to a minimum.
Avoid running protected conductors in parallel with unprotected conductors.
Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Use ground planes whenever possible. For multilayer PCBs, use ground vias.
11. Test information
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
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Very low capacitance bidirectional ESD protection diodes
12. Package outline
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm
L (2x)
SOT883B
L1
2
b (2x)
3
e
b1
1
e1
A1
A
E
D
0
0.5
Dimensions
Unit
mm
1 mm
scale
A(1)
A1
b
b1
D
E
e
e1
L
L1
max 0.40 0.04 0.20 0.55 0.65 1.05
0.30 0.30
nom 0.37
0.15 0.50 0.60 1.00 0.35 0.65 0.25 0.25
min 0.34
0.12 0.47 0.55 0.95
0.22 0.22
Note
1. Including plating thickness
Outline
version
sot883b_po
References
IEC
JEDEC
JEITA
European
projection
Issue date
11-11-02
12-01-03
SOT883B
Fig. 12. Package outline DFN1006B-3 (SOT883B)
PESD5V0V2BMB
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Very low capacitance bidirectional ESD protection diodes
13. Soldering
Footprint information for reflow soldering
SOT883B
1.3
0.7
R0.05 (8x)
0.9
0.6
0.7
0.25
(2x)
0.3
(2x)
0.3
0.4
(2x)
0.4
solder land
solder land plus solder paste
solder paste deposit
solder resist
occupied area
Dimensions in mm
sot883b_fr
Fig. 13. Reflow soldering footprint for DFN1006B-3 (SOT883B)
PESD5V0V2BMB
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14. Revision history
Table 7.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PESD5V0V2BMB v.1
20150817
Product data sheet
-
-
PESD5V0V2BMB
Product data sheet
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Very low capacitance bidirectional ESD protection diodes
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or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
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15. Legal information
15.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Right to make changes — NXP Semiconductors reserves the right to
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limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
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Please consult the most recently issued document before initiating or
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The product status of device(s) described in this document may have
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shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
15.3 Disclaimers
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or completeness of such information and shall have no liability for the
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PESD5V0V2BMB
Product data sheet
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
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malfunction of an NXP Semiconductors product can reasonably be expected
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
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customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
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TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
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16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Characteristics ....................................................... 3
10
Application information .........................................6
11
11.1
Test information ..................................................... 6
Quality information ............................................... 6
12
Package outline ..................................................... 7
13
Soldering ................................................................ 8
14
Revision history ..................................................... 9
15
15.1
15.2
15.3
15.4
Legal information .................................................10
Data sheet status ............................................... 10
Definitions ...........................................................10
Disclaimers .........................................................10
Trademarks ........................................................ 11
© NXP Semiconductors N.V. 2015. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 17 August 2015
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