Data Sheet

PTVS5V0Z1USK
Transient voltage suppressor in DSN1608-2 for mobile
applications
11 February 2016
Preliminary data sheet
1. General description
Unidirectional Transient Voltage Suppressor (TVS) in a very small leadless DSN1608-2
(SOD964) package.
2. Features and benefits
•
•
•
•
•
Rated peak pulse current: IPPM = 80 A (8/20 µs pulse)
Rated peak pulse power: PPPM = 1200 W (8/20 µs pulse)
Dynamic resistance Rdyn = 0.06 Ω
Reverse current: IRM = 0.025 µA
Very low package height: 0.29 mm
3. Applications
•
•
•
Power supply protection
Industrial application
Power management
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
IPPM
peak pulse current
tp = 8/20 µs
tp = 10/1000 μs
VRWM
reverse standoff
voltage
[1]
[2]
[3]
Min
Typ
Max
Unit
[1][2]
-
-
80
A
[3][2]
-
-
20
A
-
-
5
V
Tamb = 25 °C
In accordance with IEC 61000-4-5 (8/20 µs current waveform).
Measured from pin 1 to pin 2.
In accordance with IEC 61643-321 (10/1000 µs current waveform).
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PTVS5V0Z1USK
NXP Semiconductors
Transient voltage suppressor in DSN1608-2 for mobile applications
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
K
2
A
Simplified outline
Graphic symbol
cathode
1
1
anode
2
2
sym035
Transparent top view
DSN1608-2 (SOD964)
6. Ordering information
Table 3.
Ordering information
Type number
PTVS5V0Z1USK
Package
Name
Description
Version
DSN1608-2
leadless very small package; 2 terminals; body 1.6 x 0.8 SOD964
x 0.29 mm
7. Marking
Table 4.
Marking codes
Type number
Marking code
PTVS5V0Z1USK
Z2
PTVS5V0Z1USK
Preliminary data sheet
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Transient voltage suppressor in DSN1608-2 for mobile applications
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
PPPM
peak pulse power
tp = 8/20 µs
IPPM
peak pulse current
Min
Max
Unit
[1][2]
-
1200
W
tp = 10/1000 μs
[3][2]
-
200
W
tp = 8/20 µs
[1][2]
-
80
A
tp = 10/1000 μs
[3][2]
-
20
A
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-40
125
°C
Tstg
storage temperature
-65
150
°C
ESD maximum ratings
VESD
electrostatic discharge voltage
[1]
[2]
[3]
[4]
IEC 61000-4-2; contact discharge
[4][2]
-
30
kV
IEC 61000-4-2; air discharge
[4][2]
-
30
kV
In accordance with IEC 61000-4-5 (8/20 µs current waveform).
Measured from pin 1 to pin 2.
In accordance with IEC 61643-321 (10/1000 µs current waveform).
Device stressed with ten non-repetitive ESD pulses.
001aaa631
001aaa630
120
IPP
100 %
100 % IPP; 8 µs
IPP
(%)
80
90 %
e-t
50 % IPP; 20 µs
40
10 %
0
Fig. 1.
0
10
20
30
tp (µs)
8/20 µs pulse waveform according to
IEC 61000-4-5
PTVS5V0Z1USK
Preliminary data sheet
tr = 0.6 ns to 1 ns
40
t
30 ns
60 ns
Fig. 2.
ESD pulse waveform according to
IEC 61000-4-2
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Transient voltage suppressor in DSN1608-2 for mobile applications
006aab319
150
IPP
(%)
100 % IPP; 10 µs
100
50 % IPP; 1000 µs
50
0
Fig. 3.
0
1.0
2.0
3.0
tp (ms)
4.0
10/1000 µs pulse waveform according to IEC 61643-321
9. Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRWM
reverse standoff
voltage
Tamb = 25 °C
-
-
5
V
IRM
reverse leakage
current
VR = 5 V; Tamb = 25 °C
-
0.025
1
µA
Cd
diode capacitance
f = 1 MHz; VR = 0 V; Tamb = 25 °C
-
1200
-
pF
VBR
breakdown voltage
IR = 10 mA; Tamb = 25 °C
[1]
6.4
7
7.8
V
VCL
clamping voltage
IPPM = 80 A; Tamb = 25 °C; tp = 8/20 µs
[2][1]
-
-
18
V
IPPM = 20 A; Tamb = 25 °C;
[3][1]
-
-
12
V
[4][1]
-
0.06
-
Ω
[1]
tp = 10/1000 μs
Rdyn
dynamic resistance
[1]
[2]
[3]
[4]
PTVS5V0Z1USK
Preliminary data sheet
IR = 10 A; Tamb = 25 °C
Measured from pin 1 to 2.
In accordance with IEC 61000-4-5 (8/20 µs current waveform).
In accordance with IEC 61643-321 (10/1000 µs current waveform).
Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse; ANSI / ESD
STM5.5.1-2008.
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Transient voltage suppressor in DSN1608-2 for mobile applications
I
aaa-018460
104
PPPM
(W)
103
- VCL - VBR - VRWM
-
V
- IRM
- IR
102
+
P-N
10
- IPP
- IPPM
Fig. 4.
006aab324
V-I characteristics for a unidirectional TVS
protection diode
Fig. 5.
006aab321
1.2
PPPM
tp (µs)
104
aaa-018461
IRM
(nA)
102
0.4
10
Fig. 6.
103
Rated peak pulse power as a funtion of square
pulse duration; typical values
0.8
0
102
103
PPPM(25°C)
0
10
50
100
150
Tj (°C)
1
-100
200
Relative variation of rated peak pulse power
as a function of junction temperature; typical
values
PTVS5V0Z1USK
Preliminary data sheet
0
100
Tamb (°C)
200
VRWM = 5 V
Fig. 7.
Relative variation of reverse leakage current
as a function of ambient temperature; typical
values
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Transient voltage suppressor in DSN1608-2 for mobile applications
aaa-018462
30
IPP
(A)
25
aaa-018463
5
Rdyn = 0.06 Ω
Rdyn = 0.06 Ω
IPP
(A)
-5
20
15
-15
10
5
-25
0
-5
0
2
4
6
8
VCL (V)
-35
10
tp = 100 ns; Transmission Line Pulse (TLP)
Fig. 8.
-3
-1
VCL (V)
0
tp = 100 ns; Transmission Line Pulse (TLP)
Dynamic resistance with positive clamping
voltage; typical values
Fig. 9.
Dynamic resistance with negative clamping
voltage; typical values
aaa-018464
18
-2
aaa-018465
0
VCL
(V)
VCL
(V)
12
-4
6
-8
0
0
40
80
IPP (A)
-12
-140
120
Fig. 10. Dynamic resistance with positive clamping
voltage; typical values
Preliminary data sheet
-100
-80
-60
-40
-20
IPP (A)
0
tp = 8/20 μs; according to IEC 61000-4-5
tp = 8/20 μs; according to IEC 61000-4-5
PTVS5V0Z1USK
-120
Fig. 11. Dynamic resistance with negative clamping
voltage; typical values
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Transient voltage suppressor in DSN1608-2 for mobile applications
ESD TESTER
4 GHz DIGITAL
OSCILLOSCOPE
RG 223/U
50 Ω coax
Rd
40 dB
ATTENUATOR
Cs
50 Ω
DUT
(DEVICE
UNDER
TEST)
IEC 61000-4-2 ed.2
Cs = 150 pF; Rd = 330 Ω
10
2
V
(kV) 8
V
(kV) 0
6
-2
4
-4
2
-6
0
-8
-2
-10
0
10
20
30
40
50
t (ns)
60
70
-10
-10
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
0
10
20
30
40
50
t (ns)
60
70
unclamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
aaa-003952
Fig. 12. ESD clamping test setup and waveforms
aaa-018466
25
VCL
(V)
20
15
5
10
0
5
-5
VCL at 30 ns = 7.9 V
0
-10
-5
-15
-10
-10
0
10
20
30
40
50
60
t (ns)
Fig. 13. Clamped +8 kV pulse waveform
(IEC 61000-4-2 network)
PTVS5V0Z1USK
Preliminary data sheet
aaa-018467
15
VCL
(V)
10
70
-20
-10
VCL at 30 ns = -1.4 V
0
10
20
30
40
50
60
t (ns)
70
Fig. 14. Clamped -8 kV pulse waveform
(IEC 61000-4-2 network)
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Transient voltage suppressor in DSN1608-2 for mobile applications
10. Application information
line to be protected
(positive signal polarity)
line to be protected
(negative signal polarity)
TVS diode
TVS diode
GND
GND
unidirectional protection of one line
aaa-019403
Fig. 15. Application diagram
11. Package outline
0.8
0.29
1
1.6
2
Dimensions in mm
15-08-13
Fig. 16. Package outline DSN1608-2 (SOD964)
PTVS5V0Z1USK
Preliminary data sheet
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Transient voltage suppressor in DSN1608-2 for mobile applications
12. Soldering
SOD964
2
1.8
0.26
0.93
0.3
0.875
R = 0.075 mm
0.7
occupied area
solder resist
Cu trace
solder paste
Dimensions in mm
16-01-13
16-01-18
1.2
sod964_fr
Fig. 17. Reflow soldering footprint for DSN1608-2 (SOD964)
PTVS5V0Z1USK
Preliminary data sheet
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13. Revision history
Table 7.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PTVS5V0Z1USK v.1
20160211
Preliminary data sheet
-
-
PTVS5V0Z1USK
Preliminary data sheet
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Transient voltage suppressor in DSN1608-2 for mobile applications
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or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
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14. Legal information
14.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
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Preview — The document is a preview version only. The document is still
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NXP Semiconductors does not give any representations or warranties as to
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intended for quick reference only and should not be relied upon to contain
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customer have explicitly agreed otherwise in writing. In no event however,
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is deemed to offer functions and qualities beyond those described in the
Product data sheet.
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or completeness of such information and shall have no liability for the
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source outside of NXP Semiconductors.
PTVS5V0Z1USK
Preliminary data sheet
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
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Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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products are sold subject to the general terms and conditions of commercial
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grant, conveyance or implication of any license under any copyrights, patents
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In the event that customer uses the product for design-in and use in
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14.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PTVS5V0Z1USK
Preliminary data sheet
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15. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Characteristics ....................................................... 4
10
Application information .........................................8
11
Package outline ..................................................... 8
12
Soldering ................................................................ 9
13
Revision history ................................................... 10
14
14.1
14.2
14.3
14.4
Legal information .................................................11
Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12
© NXP Semiconductors N.V. 2016. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 11 February 2016
PTVS5V0Z1USK
Preliminary data sheet
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