PANASONIC CNZ1108

Transmissive Photosensors (Photo Interrupters)
CNZ1102, CNZ1108 (ON1102, ON1108)
Photo Interrupters
Unit : mm
CNZ1102
Mark for
indicating
LED side
25.0±0.35
13.0±0.3
3.0±0.2
Device
center
Overview
7.0 min.
2.5±0.2
10.0±0.2
CNZ1102 and CNZ1108 are a photocoupler in which a high
efficiency GaAs infrared light emitting diode is used as the light
emitting element, and a high sensitivity phototransistor is used as
the light detecting element. The two elements are arranged so as to
face each other, and objects passing between them are detected.
3.0±0.3
For contactless SW, object detection
2-0.45±0.2
*9.6±0.3
Features
3
6.2±0.2
2
1
*2.54±0.2
Large output current
Fast response : tr, tf = 4 µs (typ.) (CNZ1102)
6 µs (typ.) (CNZ1108)
Small output current variation against change in temperature
4
2
3
1
4
Small package used for saving mounting space (CNZ1108)
Pin connection
(Note) * is dimension at the root of leads
Absolute Maximum Ratings (Ta = 25˚C)
CNZ1108
Unit
V
IF
50
mA
75
mW
20
mA
Output (Photo Collector to emitter voltage VCEO
transistor)
Emitter to collector voltage VECO
30
V
5
V
Collector power dissipation
PC*2
100
mW
Operating ambient temperature
Topr –25 to +85
˚C
Storage temperature
Tstg –30 to +100
˚C
Collector current
Temperature
PD
*1
IC
Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C.
*2 Output power derating ratio is 1.33 mW/˚C at Ta ≥ 25˚C.
Mark for indicating
LED side
13.0±0.3
3.0±0.2
A
3.5±0.2
Device
center
A'
;;;
3
3.0±0.3
VR
7.0 min. 10.0±0.2
2.5±0.2
Reverse voltage (DC)
Input (Light
Forward current (DC)
emitting diode)
Power dissipation
Symbol Ratings
Unit : mm
4- 0.45±0.2
*9.4±0.3
2
*2.54±0.2
3
6.2±0.2
Parameter
*1
19.0±0.2
2-ø3.2±0.2
Position detection accuracy : 1.2 mm
SEC. A-A'
2
1
3
4
1
4
Pin connection
(Note) * is dimension at the root of leads
Note) The part numbers in the parenthesis show conventional part number.
1
CNZ1102,CNZ1108
Transmissive Photosensors (Photo Interrupters)
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
Forward voltage (DC)
Input
Reverse current (DC)
characteristics
Capacitance between terminals
VF
IF = 50mA
IR
VR = 3V
Ct
VR = 0V, f = 1MHz
Collector cutoff current
Output
characteristics Collector to emitter capacitance
ICEO
CC
VCE = 10V, f = 1MHz
Collector current
IC*2
VCE = 10V, IF = 20mA
min
*1
1.2
1.5
V
10
µA
200
nA
50
Unit
pF
5
pF
2
mA
4
µs
6
µs
CNZ1108 VCE(sat) IF = 50mA, IC = 0.1mA
0.4
V
0.4
V
Switching time measurement circuit
Sig.IN
VCC
td : Delay time
tr : Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
tf : Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
(Input pulse)
Sig.OUT (Output pulse)
*2
RL
90%
10%
td
;;
;;
50Ω
tr
tf
IC classifications
Class
Q
R
S
IC (mA)
2.0 to 5.0
4.0 to 10.0
7.0 to 20.0
IF , IC — Ta
IF — V F
IC — I F
10 2
60
VCE = 10V
Ta = 25˚C
Ta = 25˚C
IF
30
IC
20
10
0
– 25
40
Collector current
40
IC (mA)
50
IF (mA)
50
Forward current
Forward current, collector current
IF , IC (mA)
60
30
20
10
1
10 –1
10
0
20
40
60
80
Ambient temperature Ta (˚C )
2
max
VCE = 10V
CNZ1102
VCC = 10V, IC = 5mA, RL = 100Ω
Response time
tr , tf*1
Transfer
CNZ1108
VCC = 10V, IC = 1mA, RL = 100Ω
characteristics
Collector to emitter CNZ1102 VCE(sat) IF = 50mA, IC = 1mA
Saturation voltage
typ
100
0
0
0.4
0.8
1.2
1.6
2.0
Forward voltage VF (V)
2.4
10 –2
10 –1
1
10
Forward current IF (mA)
10 2
Transmissive Photosensors (Photo Interrupters)
VF — Ta
CNZ1102,CNZ1108
IC — VCE
IC — Ta
10 2
1.6
160
VCE = 10V
IF = 20mA
0.4
20
40
60
80
10mA
1
10 –1
10 –2
10 –1
100
Ambient temperature Ta (˚C )
1
ICEO — Ta
tr (µs)
Rise time
10V
RL = 1kΩ
500Ω
100Ω(ON1108)
10
100Ω(ON1102)
1
Sig.IN
VCC
V1
50Ω
Sig. V1
OUT
V2 V2
RL
10 –3
20
40
60
80
Ambient temperature Ta (˚C )
100
;
;
ICEO (µA)
Dark current
10 –1
10 –1
10 –2
10 –1
40
60
80
100
IC (%)
100
VCC = 10V
Ta = 25˚C
10 2
0
20
IC — d
1
10 –4
– 40 – 20
0
Ambient temperature Ta (˚C )
tr — IC
10 3
VCE = 24V
40
Collector to emitter voltage VCE (V)
10
10 –2
80
0
– 40 – 20
10 2
10
120
tr
td
90%
10%
Criterion
0
IC (%)
0
20mA
80
Relative output current
0
– 40 – 20
10
Relative output current
10mA
0.8
IF = 30mA
IC (mA)
IF = 50mA
1.2
Collector current
Forward voltage
VF (V)
Ta = 25˚C
60
d
40
20
tf
1
Collector current IC (mA)
10
0
0
1
2
3
4
5
6
Distance d (mm)
3
Caution for Safety
Gallium arsenide material (GaAs) is used
in this product.
DANGER
Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide
material in powder or vapor form is harmful to human
health.
Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of
GaAs-containing products.
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the
products or technologies described in this material and controlled under the "Foreign Exchange and Foreign
Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting
of relative rights, or the granting of any license.
(3) The products described in this material are intended to be used for standard applications or general electronic
equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion
equipment, life support systems and safety devices) in which exceptional quality and reliability are required,
or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
• Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without notice for
reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the
range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for
any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended, so that
such equipment may not violate relevant laws or regulations because of the function of our products.
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(7) No part of this material may be reprinted or reproduced by any means without written permission from our
company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available product
types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information before
starting precise technical research and/or purchasing activities.
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the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any
liability for any damages arising from any errors etc. that may appear in this material.
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2001 MAR