Infrared Light Emitting Diodes LN189M GaAlAs Infrared Light Emitting Diode Unit: mm Light source for distance measuring systems 1 0.4±0.1 PD 160 mW Forward current (DC) IF 90 mA IFP 175 mA Reverse voltage (DC) VR 3 V Operating ambient temperature Topr −25 to +85 °C Storage temperature Tstg −40 to +100 °C 0.2 3.0±0.15 , , , 0.6 4.0±0.15 1.0 3.0±0.2 3.4±0.2 6.0±0.3 0.35 0.75 Power dissipation 0.15 1.5±0.2 3.2±0.15 1.5 Unit 2.0±0.2 Ratings Pulse forward current Spherical lens φ0.4±0.03 2 Symbol * 0.6±0.1 0.5±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter 0.3 0.6±0.1 ,, , ,, • High-power output, high-efficiency: PO = 5.5 mW (typ.) • Fast response and high-speed modulation capability: tr, tf = 20 ns (typ.) • Infrared light emission close to monochromatic light: λP = 880 nm (typ.) • Narrow directivity using spherical lenses; works well with optical systems in auto focus systems 6.0±0.3 Mark (Black) ■ Features 0.1 max. 1.0 2.2±0.15 1: Anode 2: Cathode Note) *: f = 10 kHz, Duty cycle = 25% ■ Electro-optical Characteristics Ta = 25°C Parameter Symbol Conditions min typ max Unit Radiant power PO IF = 100 mA Peak emission wavelength λP IF = 100 mA Spectral band width ∆λ IF = 100 mA 50 Forward voltage (DC) VF IF = 100 mA 1.55 Reverse current (DC) IR VR = 3 V Rise time tr IFP = 100 mA 20 ns Fall time tf IFP = 100 mA 20 ns Half-power angle θ The angle in which radiant intencity is 50% 20 ° 3 mW 880 nm nm 1.9 V 10 µA Precautions for Use [Airtightness] This product is not structured to provide a complete air seal. Therefore it cannxot be immersed in solutions for purposes such as boiling tests or ultrasonic cleaning. [Ability to withstand soldering heat] The package of this product contains thermoplastic resin which has a limited ability to withstand heat. Therefore this product cannot be put through automated soldering operations in which the ambient temperature exceeds the specified temperature. The recommended soldering conditions are as follows. · Temperature of soldering iron tip: 260°C or less : 300°C or less or · Soldering time : 5 seconds or less : 1 second or less · Soldering position : At least 2 mm away from lead base ] [Ability to withstand chemicals] If the transparent case requires cleaning, wipe it lightly using ethyl alcohol, methyl alcohol, or isopropyl alcohol. If you plan to use other solvents, carefully check to make sure there are no problems such as a misshapen case or a change in the condition of the case material. 1 LN189M Infrared Light Emitting Diodes IF T a IF V F 120 IFP VF 1 160 tW = 10 µs f = 100 Hz Ta = 25°C Ta = 25°C 140 80 60 40 Pulse forward current IFP (A) Forward current IF (mA) Forward current IF (mA) 100 120 100 80 60 40 10−1 20 20 0 20 40 60 80 0 100 0 0.5 ∆PO IF Forward voltage VF (V) 2 3 4 5 ∆PO Ta 10 IF = 80 mA 1.4 10 mA 1.2 1 mA IF = 90 mA 1 1.0 10−2 10−1 1 0.8 −40 10 Forward current IF (A) 0 40 80 120 Ambient temperature Ta (°C) λP Ta Relative radiant intensity (%) 900 800 700 40 80 Directivity characteristics 0° IF = 20 mA IF = 50 mA 0 Ambient temperature Ta (°C) Spectral characteristics 100 1 000 10−1 −40 80 90 80 70 60 60 50 40 40 30 20 20 10° 20° 100 Relative radiant intensity (%) Relative radiant power ∆PO (2) (3) 10−1 Peak emission wavelength λP (nm) 1 Forward voltage VF (V) 1.6 1 10−2 −3 10 0 VF Ta (1) 10 10−2 2.0 1.8 (1) tW = 10 µs Duty = 0.1% (2) tW = 50 µs Duty = 50% (3) DC Ta = 25°C 102 1.5 Forward voltage VF (V) Ambient temperature Ta (°C) 103 1.0 Relative radiant power ∆PO 0 −25 30° 40° 50° 60° 70° 80° 90° 600 −40 0 40 80 Ambient temperature Ta (°C) 2 120 0 780 820 860 900 940 Wavelength λ (nm) 980 1 020