DL

Featured Products
2nd Generation (Lower VF)
SiC Schottky Barrier Diodes
SiC POWER
TO-247
Low VF
SiC POWER
Fast Recovery
TO-220FM
SiC POWER
Lower switching loss
s
LPTL
(D2-PAK)
TO-220AC
Lineup
Line
Line
Li
eup
eup
up
Industry-low
Indu
Ind
In
dust
stry
try
y-l
-low
low
w VF
VF-IF
(Ta=25°C)
10
IImproved
Imp
Im
mp
mproved
d processes
p ces
pro
cesses
ses and
a d
an
device
device structure makes
make
ess it
possible to reduce
possible
educe VF
VF while
maintaining
maintaining
ntaining low current
nt
le
eakage.
leakage.
The
The rise voltage in particular
rticularr
s low, ensuring
ng high
is
efficiency
efficiency
ency during
du
low load
conditions
conditions regardless of
temperature
operating temperatur
operating
emperature
perature
ature
ture
re orr
current level
current
lle el.l.
level.
Part No.
AutomotiveGrade*1
(AEC-Q101)
SCS206AJ
Absolute Max. Ratings (Ta=25°C)
Electrical Characteristics (Ta=25°C)
VR
(V)
IF
(A)
IFSM
(A)
[@60Hz]
VF (V)
Typ.
-
650
650
6
24
1.35
6
120
600
SCS208AJ
-
650
650
8
31
1.35
8
160
600
SCS210AJ
-
650
650
10
40
1.35
10
200
600
SCS212AJ
-
650
650
12
45
1.35
12
240
600
SCS215AJ
-
650
650
15
55
1.35
15
300
600
SCS220AJ
-
650
650
20
71
1.35
20
400
600
SCS206AG
Yes
650
650
6
24
1.35
6
120
600
SCS208AG
Yes
650
650
8
31
1.35
8
160
600
SCS210AG
Yes
650
650
10
40
1.35
10
200
600
SCS212AG
Yes
650
650
12
45
1.35
12
240
600
SCS215AG
Yes
650
650
15
55
1.35
15
300
600
SCS220AG
Yes
650
650
20
71
1.35
20
400
600
SCS206AM
-
650
650
6
24
1.35
6
120
600
SCS208AM
-
650
650
8
31
1.35
8
160
600
SCS210AM
-
650
650
10
40
1.35
10
200
600
SCS212AM
-
650
650
12
45
1.35
12
240
600
0
SCS215AM
-
650
650
15
55
1.35
15
300
600
-2
SCS220AM
-
650
650
20
71
1.35
20
400
600
SCS220AE2
Yes
650
650
10/20*2
40/80*2
1.35
10
200
600
SCS230AE2
-
650
650
15/30*2
55/110*2
1.35
15
300
600
IF (A)
VRM
(V)
0.15V Down
5
New Series
SCS210AG
Comparable
Product
SCS110AG
0
0
1
VF (V)
0.5
2
1.5
Ultra-high-speed
Ultra
Ultr
U
Ul
Ult
ltr
trra
tra
a-hi
high
hi
h-spe
speed
ds
wit
wi
itc
tchi
tchi
hing
ng
g
switching
( ig
(S
(Significantly
gnifi
niifi
f ca
fica
cant
ntly
nt
ly
y llow
lower
ower
ow
werr swit
swi
s
sw
switching
witc
wi
wit
tchi
tc
hing
hi
ng
g llos
loss)
os
oss
ss)
s)
Ultra-low reverse recovery
time (trr) - unattainable with
silicon solutions - enables
high-speed switching, while
the small reverse recovery
charge (Qrr) reduces
switching loss, contributing to
device miniaturization.
Switching Waveforms
12
SiC SBD
10
Current (A)
8
Loss is reduced as this
area becomes smaller,
providing a greater advantage
6
4
2
-6
Si FRD
Qrr
-4
100
Time (nsec)
0
200
trr Temperature Characteristics
Reverse Recovery Time trr (nsec)
100
90
80
Conditions
IF=10A
di/dt= -350A/sec
Si FRD
70
60
50
40
Difference increases
with temperature
30
20
10
0
0
SiC SBD
SiC features very little temperature dependence
10
20
30
40 50
Ta (°C)
60
70
80
90 100
In addition, SiC devices
maintain constant
characteristics, regardless of
temperature - unlike silicon
fast recovery diodes, in which
trr increases with
temperature. This allows for
high temperature operation
and driving with no switching
loss.
IF (A)
IR (μA)
Max.
Package
VR (V)
SCS240AE2
-
650
650
20/40*2
71/140*2
1.35
20
400
600
SCS205KG
Yes
1,200
1,200
5
23
1.4
5
100
1,200
SCS210KG
Yes
1,200
1,200
10
45
1.4
10
200
1,200
SCS215KG
-
1,200
1,200
15
65
1.4
15
300
1,200
SCS220KG
-
1,200
1,200
20
82
1.4
20
400
1,200
SCS210KE2
-
1,200
1,200
5/10*2
23/46*2
1.4
5
100
1,200
SCS220KE2
-
1,200
1,200
10/20*2
44/88*2
1.4
10
200
1,200
SCS230KE2
-
1,200
1,200
15/30*2
65/130*2
1.4
15
300
1,200
SCS240KE2
-
1,200
1,200
20/40*2
84/160*2
1.4
20
400
1,200
*1: Current as of June 2013
*2: 1 pin/package
LPTL
(D2-PAK)
[4pin]
TO-220AC
[2pin]
TO-220FM
[2pin]
TO-247
[3pin]
TO-220AC
[2pin]
TO-247
[3pin]
Equivalent
Circuit
The Industry’s First* Full SiC Power Modules
*Mass production - ROHM Sept. 2013 survey
Absolute Maximum Ratings (Ta=25°)
Switching Loss Comparison (vs. IGBT Module)
Part No.
60
Vds=600V
Id= 100A
Vg(on)=18V
Vg(off)=0V
Ta=125°C
Inductive load
50
Esw (mJ)
40
ID (A)
Tj (°C)
MOS Module
.A
BSM180D12P2C101
.B
Co
1,200
–6 to +22
180
–40 to
+150
–40 to
+125
2,500
1,200
–6 to +22
120
–40 to
+150
–40 to
+125
2,500
Half Bridge Circuit
30
Co. C
20
MOS+SBD Module
85% lower
10
0
Lower
Loss
VGS (V)
Si IGBT Module
1200V/100A
Co
Visol (V)
Tstg (°C) AC 1min.
VDS (V)
BSM120D12P2C005
ROHM
BSM120D12P2C005
0
10
100
Gate Resistance High Voltage Low ON Resistance Switching High Speed Recovery SiC MOSFETs
Turn-OFF Characteristics
Switching Series
25
Vdd=400V
Current (A)
20
90% (max.) lower
switching loss
15
10
Si-IGBT
5
0
-5
SiC-MOSFET
0
50
100 150 200 250 300 350 400 450
Time (nsec)
(@ 30kHz)
120
Loss (W)
80
Turn-ON
Switching Loss
Polarity
VDSS (V)
ID (A)
PD (W)
(Tc=25°C)
RDS(on)
VGS=18V
Qg
Typ. (nC)
Drive
VGS=18V Voltage (V)
SCT2120AF
N
650
29
165
120
61
18
SCH2080KE
N
1,200
35
179
80
106
18
SCT2080KE
N
1,200
35
179
80
106
18
SCT2160KE
N
1,200
22
165
160
62
18
SCT2280KE
N
1,200
14
108
280
36
18
SCT2450KE
N
1,200
10
85
450
27
18
Polarity
VDSS (V)
ID (A)
PD (W)
(Tc=25°C)
Package
TO-220AB
TO-247
Music Series
Loss Comparison
100
Part No.
Turn-ON Switching Loss
Turn-OFF Switching Loss
Conduction Loss
Part No.
SCTMU001F
N
400
20
132
RDS (on)
VGS=18V
Qg
Typ. (nC)
Drive
VGS=18V Voltage (V)
120
59
Package
TO-220AB
18
Switching loss reduced
by 80% vs. silicon IGBTs
60
40
Turn-OFF
Switching Loss
20
0
Conduction Loss
Si-IGBT
SiC-MOSFET
TO-220AB
TO-247
The contents specified in this document are correct as of September 1st, 2013.
[O_022] Catalog No.56O6746E 09.2013 ROHM © PDF
Similar pages