Featured Products 2nd Generation (Lower VF) SiC Schottky Barrier Diodes SiC POWER TO-247 Low VF SiC POWER Fast Recovery TO-220FM SiC POWER Lower switching loss s LPTL (D2-PAK) TO-220AC Lineup Line Line Li eup eup up Industry-low Indu Ind In dust stry try y-l -low low w VF VF-IF (Ta=25°C) 10 IImproved Imp Im mp mproved d processes p ces pro cesses ses and a d an device device structure makes make ess it possible to reduce possible educe VF VF while maintaining maintaining ntaining low current nt le eakage. leakage. The The rise voltage in particular rticularr s low, ensuring ng high is efficiency efficiency ency during du low load conditions conditions regardless of temperature operating temperatur operating emperature perature ature ture re orr current level current lle el.l. level. Part No. AutomotiveGrade*1 (AEC-Q101) SCS206AJ Absolute Max. Ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) VR (V) IF (A) IFSM (A) [@60Hz] VF (V) Typ. - 650 650 6 24 1.35 6 120 600 SCS208AJ - 650 650 8 31 1.35 8 160 600 SCS210AJ - 650 650 10 40 1.35 10 200 600 SCS212AJ - 650 650 12 45 1.35 12 240 600 SCS215AJ - 650 650 15 55 1.35 15 300 600 SCS220AJ - 650 650 20 71 1.35 20 400 600 SCS206AG Yes 650 650 6 24 1.35 6 120 600 SCS208AG Yes 650 650 8 31 1.35 8 160 600 SCS210AG Yes 650 650 10 40 1.35 10 200 600 SCS212AG Yes 650 650 12 45 1.35 12 240 600 SCS215AG Yes 650 650 15 55 1.35 15 300 600 SCS220AG Yes 650 650 20 71 1.35 20 400 600 SCS206AM - 650 650 6 24 1.35 6 120 600 SCS208AM - 650 650 8 31 1.35 8 160 600 SCS210AM - 650 650 10 40 1.35 10 200 600 SCS212AM - 650 650 12 45 1.35 12 240 600 0 SCS215AM - 650 650 15 55 1.35 15 300 600 -2 SCS220AM - 650 650 20 71 1.35 20 400 600 SCS220AE2 Yes 650 650 10/20*2 40/80*2 1.35 10 200 600 SCS230AE2 - 650 650 15/30*2 55/110*2 1.35 15 300 600 IF (A) VRM (V) 0.15V Down 5 New Series SCS210AG Comparable Product SCS110AG 0 0 1 VF (V) 0.5 2 1.5 Ultra-high-speed Ultra Ultr U Ul Ult ltr trra tra a-hi high hi h-spe speed ds wit wi itc tchi tchi hing ng g switching ( ig (S (Significantly gnifi niifi f ca fica cant ntly nt ly y llow lower ower ow werr swit swi s sw switching witc wi wit tchi tc hing hi ng g llos loss) os oss ss) s) Ultra-low reverse recovery time (trr) - unattainable with silicon solutions - enables high-speed switching, while the small reverse recovery charge (Qrr) reduces switching loss, contributing to device miniaturization. Switching Waveforms 12 SiC SBD 10 Current (A) 8 Loss is reduced as this area becomes smaller, providing a greater advantage 6 4 2 -6 Si FRD Qrr -4 100 Time (nsec) 0 200 trr Temperature Characteristics Reverse Recovery Time trr (nsec) 100 90 80 Conditions IF=10A di/dt= -350A/sec Si FRD 70 60 50 40 Difference increases with temperature 30 20 10 0 0 SiC SBD SiC features very little temperature dependence 10 20 30 40 50 Ta (°C) 60 70 80 90 100 In addition, SiC devices maintain constant characteristics, regardless of temperature - unlike silicon fast recovery diodes, in which trr increases with temperature. This allows for high temperature operation and driving with no switching loss. IF (A) IR (μA) Max. Package VR (V) SCS240AE2 - 650 650 20/40*2 71/140*2 1.35 20 400 600 SCS205KG Yes 1,200 1,200 5 23 1.4 5 100 1,200 SCS210KG Yes 1,200 1,200 10 45 1.4 10 200 1,200 SCS215KG - 1,200 1,200 15 65 1.4 15 300 1,200 SCS220KG - 1,200 1,200 20 82 1.4 20 400 1,200 SCS210KE2 - 1,200 1,200 5/10*2 23/46*2 1.4 5 100 1,200 SCS220KE2 - 1,200 1,200 10/20*2 44/88*2 1.4 10 200 1,200 SCS230KE2 - 1,200 1,200 15/30*2 65/130*2 1.4 15 300 1,200 SCS240KE2 - 1,200 1,200 20/40*2 84/160*2 1.4 20 400 1,200 *1: Current as of June 2013 *2: 1 pin/package LPTL (D2-PAK) [4pin] TO-220AC [2pin] TO-220FM [2pin] TO-247 [3pin] TO-220AC [2pin] TO-247 [3pin] Equivalent Circuit The Industry’s First* Full SiC Power Modules *Mass production - ROHM Sept. 2013 survey Absolute Maximum Ratings (Ta=25°) Switching Loss Comparison (vs. IGBT Module) Part No. 60 Vds=600V Id= 100A Vg(on)=18V Vg(off)=0V Ta=125°C Inductive load 50 Esw (mJ) 40 ID (A) Tj (°C) MOS Module .A BSM180D12P2C101 .B Co 1,200 –6 to +22 180 –40 to +150 –40 to +125 2,500 1,200 –6 to +22 120 –40 to +150 –40 to +125 2,500 Half Bridge Circuit 30 Co. C 20 MOS+SBD Module 85% lower 10 0 Lower Loss VGS (V) Si IGBT Module 1200V/100A Co Visol (V) Tstg (°C) AC 1min. VDS (V) BSM120D12P2C005 ROHM BSM120D12P2C005 0 10 100 Gate Resistance High Voltage Low ON Resistance Switching High Speed Recovery SiC MOSFETs Turn-OFF Characteristics Switching Series 25 Vdd=400V Current (A) 20 90% (max.) lower switching loss 15 10 Si-IGBT 5 0 -5 SiC-MOSFET 0 50 100 150 200 250 300 350 400 450 Time (nsec) (@ 30kHz) 120 Loss (W) 80 Turn-ON Switching Loss Polarity VDSS (V) ID (A) PD (W) (Tc=25°C) RDS(on) VGS=18V Qg Typ. (nC) Drive VGS=18V Voltage (V) SCT2120AF N 650 29 165 120 61 18 SCH2080KE N 1,200 35 179 80 106 18 SCT2080KE N 1,200 35 179 80 106 18 SCT2160KE N 1,200 22 165 160 62 18 SCT2280KE N 1,200 14 108 280 36 18 SCT2450KE N 1,200 10 85 450 27 18 Polarity VDSS (V) ID (A) PD (W) (Tc=25°C) Package TO-220AB TO-247 Music Series Loss Comparison 100 Part No. Turn-ON Switching Loss Turn-OFF Switching Loss Conduction Loss Part No. SCTMU001F N 400 20 132 RDS (on) VGS=18V Qg Typ. (nC) Drive VGS=18V Voltage (V) 120 59 Package TO-220AB 18 Switching loss reduced by 80% vs. silicon IGBTs 60 40 Turn-OFF Switching Loss 20 0 Conduction Loss Si-IGBT SiC-MOSFET TO-220AB TO-247 The contents specified in this document are correct as of September 1st, 2013. [O_022] Catalog No.56O6746E 09.2013 ROHM © PDF