Quasi-Resonant Converter Vo=12V Io=10A
ROHM PD SimG
Quasi-Resonant Converter Simulation Circuit
If
D1
Input: Vin=120V ~ 400V
Output: Vo=12V Io=1A ~ 10A
Vr
Vin=400V
400
V1
100k
R4
TX1
C1
10n
P1
DRB215T-90 M=2
Vo=12V
Io=10A
S1
D2
TX1-21
Switching Freq: fmin=60kHz
fmax=120kHz
Gate Drive: Vd=10V
Rg source=50Ω
Rg sink=5Ω
Q1: R8008ANX MOSFET (800V 8A)
D1: RB215T-90 SBD (90V 20A)
D2: RFU02VSM8S FRD (800V 0.2A)
TX1: P1=120uH 1:0.14:0.01 K=0.999
Tj: -25℃ ~ 125℃
DRFU02VSM8S
U1
PWM-QR-CONVERTER
Vd=10
DH1
Rso=50
Rsi=5
QR
f min=60k
f max=120k
Id
C2
1m
{Vo/Io}
R1
S2
Vds
R8008ANX
Q1
C5
200p
1k
R5
ZC
C3
50p
10k
R6
FB
U2
ISO-FB
{(Vo-2.5)*10k}
R2
Vref =2.5
SIMetrix SPICE Simulation Data File
25k
R3
DC-DC Quasi-Resonant Converter Vo=12V Io=10A.sxsch
© 2015 ROHM Co.,Ltd.
P. 1
Simulation Waveform 1
ROHM PD SimG
Q1: Vds
Vin=400V
Vo=12V
Tj=100℃
Waveform
800
700
D1: Vr
80
Vds (V) Io=10A
TX1-20 / V
TX1-11 / V
400
300
50
40
30
20
100
10
0
800
90
-0
80
Vds (V) Io=6A
Vr (V) Io=6A
70
TX1-20 / V
TX1-11 / V
60
200
600
500
400
300
60
50
40
30
200
20
100
10
0
800
90
-0
Vds (V) Io=2A
80
Vr (V) Io=2A
70
600
500
TX1-20 / V
TX1-11 / V
Vr (V) Io=10A
70
500
700
Waveform
90
600
700
Vin=400V
Vo=12V
Tj=100℃
400
300
60
50
40
30
200
20
100
10
-0
5.005
Time/mSecs
© 2015 ROHM Co.,Ltd.
5.01
5.015
5.02
5.025
5uSecs/div
-0
5.005
Time/mSecs
5.01
5.015
5.02
5.025
5uSecs/div
P. 2
Simulation Waveform 2
ROHM PD SimG
Q1: Loss, Pd, Id, Vds
Vin=400V
Vo=12V
Io=10A Tj=100℃
D1: Loss, Pd, If, Vf
50
120
Loss (uJ)
100
integ(:D1#pwr) / uJ
integ(:Q1#pwr) / uJ
40
Switching Loss
30
20
Conduction Loss
Loss (uJ)
80
60
40
10
20
Switching Loss
-0
0
80
400
Power Dissipation (W)
Power Dissipation (W)
200
100
0
40
20
-100
0
-200
-20
Y2
Y1
6
80
80
500
5
60
60
40
40
200
Red: Id (A)
4
I(Q1-D) / A
400
3
2
100
1
0
0
-100
-1
Green: Vds (V)
5.0065
Time/mSecs
© 2015 ROHM Co.,Ltd.
5.007
5.0075
5.008
5.0085
5.009
500nSecs/div
20
0
-20
I(D1-anode) / A
Y2
600
-:TX1.20 / V
Y1
TX1-11 / V
60
Power(D1) / W
Power(Q1) / W
300
300
Vin=400V
Vo=12V
Io=10A Tj=100℃
Red: If (A)
20
0
-20
-40
-40
-60
-60
-80
-80
Green: Vf (V)
5.006
5.008
Time/mSecs
5.01
5.012
5.014
5.016
5.018
5.02
2uSecs/div
P. 3
Efficiency, Power Dissipation 1
ROHM PD SimG
Vo=12V Io=10A
ITj=100℃
Vin: 120V ~ 400V
100
100
Eff (%)
Eff (%)
Efficiency: Po/Pin*100
98
96
96
94
94
92
90
88
92
90
88
86
86
84
84
82
82
80
10
80
10
Pd (W/pc)
Efficiency: Po/Pin*100
98
Efficiency / Percent
Efficiency / Percent
Vin=400V Vo=12V
Tj=100℃
Io: 1A ~ 10A
Pd (W/pc)
Power Dissipation
8
Power Dissipation
8
Power Dissipation / W
Power Dissipation / W
D1
6
Q1
4
2
6
D1
4
Q1
2
50
100
Input Voltage/V
© 2015 ROHM Co.,Ltd.
150
200
250
300
350
Vin (V)
400
450
50V/div
0
0
2
Output Current/A
4
6
8
10
Io (A)
12
2A/div
P. 4
Efficiency, Power Dissipation 2, fsw - Io
ROHM PD SimG
Vin=400V Vo=12V
Io=10A
Tj: -25℃ ~ 125℃
Vin=400V Vo=12V
Tj=100℃
Io: 1A ~ 10A
120
100
Eff (%)
fsw (kHz)
Efficiency: Po/Pin*100
98
Switching Frequency
96
Efficiency / Percent
94
110
92
90
88
100
86
Switching Frequency / kHz
84
82
80
10
Power Dissipation
Pd (W/pc)
Power Dissipation / W
8
90
D1
80
Q1
70
6
4
2
-40
-20
0
Junction Temperature/degC
© 2015 ROHM Co.,Ltd.
20
40
60
80
100
Tj (℃)
120
140
20degC/div
60
0
2
Output Current/A
4
6
8
10
Io (A)
12
2A/div
P. 5