GH50-10J 500mA 10kV 70nS-HIGH VOLTAGE DIODE High reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Outline Drawings : Features GH HVG 50- T 10J High speed switching Epoxy resin molded in vacuum, Have anticorrosion in the surface High surge resisitivity for CRT discharge High reliability design Avalanche characteristic Applications X light Power supply Laser DO-721 Series Voltage doubler circuit Lead Diameter 1.2mm Microwave emission power General purpose high voltage rectifier, Voltage multiplier assembly. 7.0mm 21mm 24mm Maximum Ratings and Characteristics Absolute Maximum Ratings Symbols Items Repetitive Peak Renerse Voltage V RRM IO Average Output Current I FSM Suege Current Condition GH50-10J Units Ta=25°C, I R =1.0uA 10 kV Ta=25°C,Resistive Load 0.5 A peak Ta=25°C,8.3 ms 20 A peak Junction Temperature Tj 155 °C Allowable Operation Case Temperature Tc 125 °C Storage Temperature Tstg -40 to +155 °C GH50-10J Units Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Symbols Conditions Maximum Forward Voltage Drop VF at 25°C,IFM =500mA 15 V Maximum Reverse Current IR1 at 25°C,VR =VRRM 2.0 uA IR2 at 100°C,V R =VRRM 20 uA Maximum Reverse Recovery Time Trr at 25°C; I F =200mA; I R =400mA; Irr =100mA; 70 nS Junction Capacitance Cj at 25°C; V R=0V,f=1MHz -- pF GETE ELECTRONIC CO.,LTD GUANGZHOU * CHINA n E-mail: [email protected] 4001 83 84 85 China Tel: n Tel: 0086-20-8184 9628 Fax: 0086-20-8184 9638 n www.getedz.com www.hvgtsemi.com 01