1N6519 500mA 10kV 70nS-HIGH VOLTAGE DIODE High reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Outline Drawings : Features 1N H 651 VG 9 T High speed switching Epoxy resin molded in vacuum, Have anticorrosion in the surface High surge resisitivity for CRT discharge High reliability design Avalanche characteristic Applications X light Power supply Laser DO-590 Series Voltage doubler circuit Lead Diameter 1.28mm Microwave emission power General purpose high voltage rectifier, Voltage multiplier assembly. 5.0mm 9.0mm 23mm Maximum Ratings and Characteristics Absolute Maximum Ratings Symbols Items Repetitive Peak Renerse Voltage V RRM IO Average Output Current I FSM Suege Current Condition 1N6519 Units Ta=25°C, 10 kV Ta=25°C,Resistive Load 500 mA Ta=25°C,8.3 ms 25 A peak Junction Temperature Tj 125 °C Allowable Operation Case Temperature Tc 125 °C Storage Temperature Tstg -55 to +165 °C 1N6519 Units Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Symbols Conditions Maximum Forward Voltage Drop VF at 25°C,IF =IF(AV) 13 V Maximum Reverse Current IR1 at 25°C,VR =VRRM 1.0 uA IR2 at 100°C,V R =VRRM 25 uA Maximum Reverse Recovery Time Trr at 25°C; I F =0.5A; 70 nS Junction Capacitance Cj at 25°C; V R=0V,f=1kHz 8.0 pF GETE ELECTRONIC CO.,LTD GUANGZHOU * CHINA n E-mail: [email protected] 4001 83 84 85 China Tel: I R =1.0A; n Irr =0.25A; Tel: 0086-20-8184 9628 Fax: 0086-20-8184 9638 n www.getedz.com www.hvgtsemi.com 01 1N6519 500mA 10kV 70nS-HIGH VOLTAGE DIODE TYPICAL FORWARD VOLTAGE VS. FORWARD CURRENT AT 25°C POWER DERATING 8 7 16.0 L=0.200" L=0.100" L=0.000" Forward Voltage (V) Maximum Power Dissipation (W) Maxumum 20.0 12.0 8.0 1N6515 6 5 4 1N6513 3 2 L=0.300" L=0.400" L=0.500" 4.0 1 0.0 0 0 25 50 75 100 125 Temperature (°C) Lead Temperature (C) 150 175 0.0 REVERSE CURRENT VS. TEMPERATURE AT Vrwm 1000.0 2.0 4.0 6.0 Forward Current (A) 8.0 10.0 TYPICAL FORWARD VOLTAGE VS. FORWARD CURRENT AT 25°C 20 18 1N6519 Forward Voltage (V) Reverse Current (uA) 16 100.0 10.0 14 12 10 1N6517 8 6 4 2 0 1.0 25 75 100 Temperature (°C) Temperature (C) 125 0.0 150 TYPICAL REVERSE RECOVERY TIME VS. TEMPERATURE 350 300 1.0 2.0 3.0 Forward Current (A) 4.0 5.0 TYPICAL JUNCTION CAPACITANCE VS. REVERSE VOLTAGE AT 25°C 60.0 50.0 Junction Capacitance (pF) Reverse Recovery Time (ns) 50 250 200 150 100 40.0 30.0 1N6513 1N6515 20.0 50 10.0 0 0.0 1N6517 1N6519 25 50 75 100 Temperature Temperature (°C) (C) GETE ELECTRONIC CO.,LTD GUANGZHOU * CHINA 125 n 150 E-mail: [email protected] 4001 83 84 85 China Tel: 0 n 20 40 60 Reverse Bias Voltage (V) Tel: 0086-20-8184 9628 Fax: 0086-20-8184 9638 n 80 www.getedz.com www.hvgtsemi.com 100 02