MCP73841/2/3/4 Advanced Single or Dual Cell Lithium-Ion/ Lithium-Polymer Charge Management Controllers Features Description • Linear Charge Management Controllers • High-Accuracy Preset Voltage Regulation: - + 0.5% (max) • Four Preset Voltage Regulation Options: - 4.1V - MCP73841-4.1, MCP73843-4.1 - 4.2V - MCP73841-4.2, MCP73843-4.2 - 8.2V - MCP73842-8.2, MCP73844-8.2 - 8.4V - MCP73842-8.4, MCP73844-8.4 • Programmable Charge Current • Programmable Safety Charge Timers • Preconditioning of Deeply Depleted Cells • Automatic End-of-Charge Control • Optional Continuous Cell Temperature Monitoring (MCP73841 and MCP73842) • Charge Status Output for Direct LED Drive • Automatic Power-Down when Input Power Removed • Temperature Range: -40°C to 85°C • Packaging: MSOP-10 - MCP73841, MCP73842 MSOP-8 - MCP73843, MCP73844 The MCP7384X family of devices are highly advanced linear charge management controllers for use in space-limited, cost-sensitive applications. The MCP73841 and MCP73842 combine high accuracy, constant-voltage, constant-current regulation, cell preconditioning, cell temperature monitoring, advanced safety timers, automatic charge termination and charge status indication in space-saving, 10-pin MSOP packages. The MCP73841 and MCP73842 provide complete, fully-functional, stand-alone charge management solutions. Applications The MCP73842 and MCP73844 are designed for applications utilizing dual series cell Lithium-Ion or Lithium-Polymer battery packs. Two preset voltage regulation options are available (8.2V and 8.4V). The MCP73842 and MCP73844 operate with an input voltage range of 8.7V to 12V. Lithium-Ion/Lithium-Polymer Battery Chargers Personal Data Assistants Cellular Telephones Hand-Held Instruments Cradle Chargers Digital Cameras MP3 Players The MCP73841 and MCP73843 are designed for applications utilizing single-cell Lithium-Ion or LithiumPolymer battery packs. Two preset voltage regulation options are available (4.1V and 4.2V) for use with either coke or graphite anodes. The MCP73841 and MCP73843 operate with an input voltage range of 4.5V to 12V. The MCP7384X family of devices are fully specified over the ambient temperature range of -40°C to +85°C. Package Types 1A Lithium-Ion Battery Charger MA2Q705 5V 100 m 10 µF NDS8434 1 + - 8 SENSE DRV 2 3 4 100 k VBAT VDD STAT1 EN 1 2 3 4 5 10 9 8 7 6 DRV VBAT VSS TIMER THERM 8-Pin MSOP 7 VSS 6 TIMER Single Lithium-Ion Cell SENSE VDD STAT1 EN THREF MCP73841 MCP73842 10-Pin MSOP Typical Application Circuit 10 µF 5 MCP73843 2003-2013 Microchip Technology Inc. 0.1 µF SENSE VDD STAT1 EN 1 2 3 4 MCP73843 MCP73844 • • • • • • • The MCP73843 and MCP73844 employ all the features of the MCP73841 and MCP73842, with the exception of the cell temperature monitor. The MCP73843 and MCP73844 are offered in 8-pin MSOP packages. 8 7 6 5 DRV VBAT VSS TIMER DS21823D-page 1 MCP73841/2/3/4 Functional Block Diagram VDD VDD VREF 1 k – SENSE Charge Current Amplifier + 90 k DRV Charge Current Control Amplifier + Voltage Control Amplifier + - – 12 k VREF 90 k 10 k Charge Termination Comparator + - IREG/10 VREF Charge_ok Precon Precondition Control 10 k + - VBAT Precondition Comp. + - 300 k (825 k) UVLO Comparator 74.21 k Constant-Voltage/ Recharge Comp. VUVLO + EN Power-On Delay 0.79 k VREF 150.02 k Bias and Reference Generator VUVLO VREF (1.2V) 5.15 k (4.29 k) THREF VSS 100 k + - THERM Temperature Comparators STAT1 Drv Stat 1 50 k + 50 k TIMER IREG/10 Charge Control, Charge Timers, And Status Logic Oscillator MCP73841 and MCP73842 Only DS21823D-page 2 Charge_ok 2003-2013 Microchip Technology Inc. MCP73841/2/3/4 1.0 ELECTRICAL CHARACTERISTICS *Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings † VDD.................................................................................13.5V All inputs and outputs w.r.t. VSS ................ -0.3 to (VDD+0.3)V Current at DRV Pin ......................................................±4 mA Current at STAT1 Pin .................................................±30 mA Maximum Junction Temperature, TJ ............................. 150°C Storage temperature .....................................-65°C to +150°C ESD protection on all pins: Human Body Model (1.5 k in Series with 100 pF)2 kV Machine Model (200 pF, No Series Resistance) .............200V DC CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(Typ)+0.3V] to 12V, TA = -40°C to +85°C. Typical values are at +25°C, VDD = [VREG(Typ) + 1V]. Parameters Sym Min Typ Max Units Conditions MCP73841, MCP73843 4.5 – 12 V MCP73842, MCP73844 8.7 – 12 V – – 0.25 0.75 4 4 µA mA MCP73841, MCP73843 4.25 4.45 4.60 V VDD Low-to-High MCP73842, MCP73844 8.45 8.65 8.90 V VDD Low-to-High Supply Input Supply Voltage VDD Supply Current ISS UVLO Start Threshold Disabled Operating VDD =VREG(Typ)+1V VSTART UVLO Stop Threshold VSTOP MCP73841, MCP73843 4.20 4.40 4.55 V VDD High-to-Low MCP73842, MCP73844 8.40 8.60 8.85 V VDD High-to-Low MCP73841-4.1, MCP73843-4.1 4.079 4.1 4.121 V VDD = [VREG(Typ)+1V], IOUT = 10 mA, TA = -5°C to +55°C MCP73841-4.2, MCP73843-4.2 4.179 4.2 4.221 V VDD = [VREG(Typ)+1V], IOUT = 10 mA, TA = -5°C to +55°C MCP73842-8.2, MCP73844-8.2 8.159 8.2 8.241 V VDD = [VREG(Typ)+1V], IOUT = 10 mA, TA = -5°C to +55°C MCP73842-8.4, MCP73844-8.4 8.358 8.4 8.442 V VDD = [VREG(Typ)+1V], IOUT = 10 mA, TA = -5°C to +55°C Voltage Regulation (Constant-Voltage Mode) Regulated Output Voltage VREG Line Regulation VBAT/ VBAT)|/VDD – 0.025 0.25 %/V Load Regulation VBAT|/VBAT – 0.01 0.25 % IOUT = 10 mA to 150 mA, VDD = [VREG(Typ)+1V] PSRR – -58 – dB IOUT = 10 mA, 100 Hz – -42 – dB IOUT = 10 mA, 1 kHz – -30 – dB IOUT = 10 mA, 10 kHz – 0.4 1 µA VDD Floating, VBAT = VREG(Typ) 110 120 mV VDD – VSENSE, TA = -5°C to +55°C Supply Ripple Attenuation Output Reverse Leakage Current IDISCHARGE VDD = [VREG(Typ)+1V] to 12V, IOUT = 10 mA Current Regulation (Fast Charge Constant-Current Mode) Fast Charge Current Regulation Threshold 2003-2013 Microchip Technology Inc. VFCS 100 DS21823D-page 3 MCP73841/2/3/4 DC CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(Typ)+0.3V] to 12V, TA = -40°C to +85°C. Typical values are at +25°C, VDD = [VREG(Typ) + 1V]. Parameters Sym Min Typ Max Units Conditions Preconditioning Current Regulation (Trickle Charge Constant-Current Mode) 5 10 15 mV VDD – VSENSE, TA = -5°C to +55°C MCP73841-4.1, MCP73843-4.1 2.70 2.80 2.90 V VBAT Low-to-High MCP73841-4.2, MCP73843-4.2 2.75 2.85 2.95 V VBAT Low-to-High MCP73842-8.2, MCP73844-8.2 5.40 5.60 5.80 V VBAT Low-to-High MCP73842-8.4, MCP73844-8.4 5.50 5.70 5.90 V VBAT Low-to-High 4 7 10 mV Precondition Current Regulation Threshold VPCS Precondition Threshold Voltage VPTH Charge Termination Charge Termination Threshold VTCS VDD – VSENSE, TA = -5°C to +55°C Automatic Recharge Recharge Threshold Voltage VRTH MCP73841, MCP73843 VREGVREGVREG300 mV 200 mV 100 mV V VBAT High-to-Low MCP73842, MCP73844 VREGVREGVREG600 mV 400 mV 200 mV V VBAT High-to-Low External MOSFET Gate Drive Gate Drive Current IDRV – 2 – mA Sink, CV Mode – -0.5 – mA Source, CV Mode Gate Drive Minimum Voltage VDRVMIN – – 1.0 V VDD = 4.5V Gate - Source Clamp Voltage VGS -7.0 – -4.5 V VDD = 12.0V 2.475 2.55 2.625 V TA = +25°C, VDD = VREG(Typ)+1V, ITHREF = 0 mA TCTHREF – +50 – ppm/°C ITHREF 200 – – µA Thermistor Reference Line Regulation VTHREF/ VTHREF)|/ VDD – 0.1 0.25 %/V Thermistor Reference Load Regulation VTHREF/ VTHREF – 0.01 0.10 % Thermistor Reference - MCP73841, MCP73842 Thermistor Reference Output Voltage Temperature Coefficient Thermistor Reference Source Current VTHREF VDD=[VREG(Typ)+1V] to 12V ITHREF = 0 mA to 0.20 mA Thermistor Comparator - MCP73841, MCP73842 VT1 1.18 1.25 1.32 V VT1HYS – -50 – mV VT2 0.59 0.62 0.66 V VT2HYS – 80 – mV |IBIAS| – – 2 µA Sink Current ISINK 4 7 12 mA Low Output Voltage VOL – 200 400 mV ISINK = 1 mA Input Leakage Current ILK – 0.01 1 µA ISINK = 0 mA, VSTAT1 = 12V Upper Trip Threshold Upper Trip Point Hysteresis Lower Trip Threshold Lower Trip Point Hysteresis Input Bias Current Status Indicator DS21823D-page 4 2003-2013 Microchip Technology Inc. MCP73841/2/3/4 DC CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(Typ)+0.3V] to 12V, TA = -40°C to +85°C. Typical values are at +25°C, VDD = [VREG(Typ) + 1V]. Parameters Sym Min Typ Max Units Input High-Voltage Level VIH 1.4 - – V Input Low-Voltage Level VIL – - 0.8 V Input Leakage Current ILK – 0.01 1 µA Conditions Enable Input VENABLE = 12V AC CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(Typ)+0.3V] to 12V, TA = -40°C to +85°C. Typical values are at +25°C, VDD= [VREG(Typ)+1V]. Parameters Sym Min Typ Max Units tSTART – – 5 msec VDD Low-to-High tDELAY – – 1 msec VBAT< VPTH to VBAT > VPTH Current Rise Time Out of Preconditioning tRISE – – 1 msec IOUT Rising to 90% of IREG Fast Charge Safety Timer Period tFAST 1.1 1.5 1.9 Hours CTIMER = 0.1 µF tPRECON 45 60 75 Minutes CTIMER = 0.1 µF tTERM 2.2 3.0 3.8 Hours CTIMER = 0.1 µF Status Output turn-off tOFF – – 200 µsec ISINK = 10 mA to 0 mA Status Output turn-on tON – – 200 µsec ISINK = 0 mA to 10 mA UVLO Start Delay Conditions Current Regulation Transition Time Out of Preconditioning Preconditioning Current Regulation Preconditioning Charge Safety Timer Period Charge Termination Elapsed Time Termination Period Status Indicators TEMPERATURE SPECIFICATIONS Electrical Specifications: Unless otherwise specified, all limits apply for VDD= [VREG(Typ)+0.3V] to 12V. Typical values are at +25°C, VDD= [VREG(Typ)+1.0V]. Parameters Sym Min Typ Max Units Conditions Temperature Ranges Specified Temperature Range TA -40 +85 °C Operating Temperature Range TA -40 +125 °C Storage Temperature Range TA -65 +150 °C Thermal Package Resistances Thermal Resistance, MSOP-10 JA 113 °C/W 4-Layer JC51-7 Standard Board, Natural Convection Thermal Resistance, MSOP-8 JA 206 °C/W Single-Layer SEMI G42-88 Board, Natural Convection 2003-2013 Microchip Technology Inc. DS21823D-page 5 MCP73841/2/3/4 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, VDD = [VREG(Typ) + 1V], IOUT = 10 mA and TA= +25°C. 4.203 +55°C MCP73841-4.2V VDD = 5.2 V 1.20 +85°C 1.00 +25°C ISS (mA) VBAT (V) 4.201 1.40 MCP73841-4.2V VDD = 5.2 V 4.202 4.200 4.199 4.198 0.80 +25°C 0.60 -45°C 0.40 -5°C 4.197 0.20 4.196 0.00 10 100 1000 10 100 IOUT (mA) IOUT (mA) FIGURE 2-1: Battery Regulation Voltage (VBAT) vs. Charge Current (IOUT). FIGURE 2-4: Supply Current (ISS) vs. Charge Current (IOUT). 4.203 1.40 4.202 +55°C MCP73841-4.2V IOUT = 1000 mA MCP73841-4.2V IOUT = 1000 mA 1.00 +25°C 4.200 ISS (mA) VBAT (V) +85°C 1.20 4.201 4.199 4.198 +25°C 0.80 0.60 -45°C 0.40 -5°C 4.197 0.20 4.196 0.00 4.5 6.0 7.5 9.0 10.5 12.0 4.5 6.0 VDD (V) 4.203 4.202 +55°C 7.5 9.0 10.5 12.0 VDD (V) FIGURE 2-2: Battery Regulation Voltage (VBAT) vs. Supply Voltage (VDD). FIGURE 2-5: Supply Current (ISS) vs. Supply Voltage (VDD). 1.40 MCP73841-4.2V IOUT = 10 mA MCP73841-4.2V IOUT = 10 mA 1.20 4.201 1.00 +25°C 4.200 ISS (mA) VBAT (V) 1000 4.199 4.198 0.80 0.60 -45°C 0.40 -5°C 4.197 +25°C 0.20 4.196 +85°C 0.00 4.5 6.0 7.5 9.0 10.5 12.0 VDD (V) FIGURE 2-3: Battery Regulation Voltage (VBAT) vs. Supply Voltage (VDD). DS21823D-page 6 4.5 6.0 7.5 9.0 10.5 12.0 VDD (V) FIGURE 2-6: Supply Current (ISS) vs. Supply Voltage (VDD). 2003-2013 Microchip Technology Inc. MCP73841/2/3/4 Note: Unless otherwise indicated, VDD = [VREG(Typ) + 1V], IOUT = 10 mA and TA= +25°C. 8.408 8.404 1.00 ISS (mA) +25°C 8.400 MCP73842-8.4V VDD = 9.4 V 1.20 +55°C 8.402 VBAT (V) 1.40 MCP73842-8.4V VDD = 9.4 V 8.406 8.398 8.396 0.80 0.60 -45°C 0.40 8.394 0.20 -5°C 8.392 8.390 0.00 10 100 1000 10 100 IOUT (mA) 8.408 8.404 1.40 1.20 +55°C 8.402 8.400 +85°C 8.398 8.396 +25°C 0.80 0.60 -45°C 0.40 8.394 0.20 -5°C 8.392 8.390 0.00 8.8 9.2 9.6 10 10.4 10.8 11.2 11.6 12 8.8 9.2 9.6 VDD (V) FIGURE 2-8: Battery Regulation Voltage (VBAT) vs. Supply Voltage (VDD). 8.404 MCP73842-8.4V IOUT = 10 mA FIGURE 2-11: Supply Current (ISS) vs. Supply Voltage (VDD). 1.40 MCP73842-8.4V IOUT = 10 mA 1.20 +55°C 1.00 8.402 VBAT (V) 10.0 10.4 10.8 11.2 11.6 12.0 VDD (V) 8.400 +25°C 8.398 8.396 ISS (mA) 8.406 MCP73842-8.4V IOUT = 1000 mA 1.00 +25°C ISS (mA) VBAT (V) FIGURE 2-10: Supply Current (ISS) vs. Charge Current (IOUT). MCP73842-8.4V IOUT = 1000 mA 8.406 1000 IOUT (mA) FIGURE 2-7: Battery Regulation Voltage (VBAT) vs. Charge Current (IOUT). 8.408 +85°C +25°C 0.80 0.60 -45°C 0.40 8.394 -5°C 8.392 0.20 8.390 0.00 8.8 9.2 9.6 10.0 10.4 10.8 11.2 11.6 12.0 VDD (V) FIGURE 2-9: Battery Regulation Voltage (VBAT) vs. Supply Voltage (VDD). 2003-2013 Microchip Technology Inc. +25°C +85°C 8.8 9.2 9.6 10.0 10.4 10.8 11.2 11.6 12.0 VDD (V) FIGURE 2-12: Supply Current (ISS) vs. Supply Voltage (VDD). DS21823D-page 7 MCP73841/2/3/4 Note: Unless otherwise indicated, VDD = [VREG(Typ) + 1V], IOUT = 10 mA and TA= +25°C. 0.45 0.70 0.30 0.25 +85°C 0.20 0.15 +25°C 0.10 0.05 +85°C 0.60 0.50 +25°C 0.40 0.30 0.20 -45°C 0.10 -45°C 0.00 0.00 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.0 4.4 4.8 5.2 5.6 6.0 6.4 6.8 7.2 7.6 8.0 8.4 VBAT (V) VBAT (V) FIGURE 2-13: Output Reverse Leakage Current (IDISCHARGE) vs. Battery Voltage (VBAT). 2.560 2.558 2.556 2.554 2.552 2.550 2.548 2.546 2.544 2.542 2.540 FIGURE 2-16: Output Reverse Leakage Current (IDISCHARGE) vs. Battery Voltage (VBAT). MCP73841-4.2V VDD = 5.2 V +85°C VTHREF (V) VTHREF (V) MCP73842-8.4V VDD = Float 0.80 IDISCHARGE (µA) 0.35 IDISCHARGE (µA) 0.90 MCP73841-4.2V VDD = Float 0.40 +25°C -45°C 0 25 50 75 100 125 150 175 2.560 2.558 2.556 2.554 2.552 2.550 2.548 2.546 2.544 2.542 2.540 200 MCP73842-8.4V VDD = 9.4 V +85°C +25°C -45°C 0 25 50 ITHREF (µA) 2.568 150 175 200 MCP73842-8.4V ITHREF = 100 µA 2.564 2.560 2.556 VTHREF (V) 2.560 VTHREF (V) 125 FIGURE 2-17: Thermistor Reference Voltage (VTHREF) vs. Thermistor Bias Current (ITHREF). MCP73841-4.2V ITHREF = 100 µA 2.564 100 ITHREF (µA) FIGURE 2-14: Thermistor Reference Voltage (VTHREF) vs. Thermistor Bias Current (ITHREF). 2.568 75 +85°C 2.552 +25°C 2.548 2.556 +85°C 2.552 +25°C 2.548 -45°C 2.544 -45°C 2.544 2.540 2.540 4.5 6.0 7.5 9.0 10.5 12.0 VDD (V) FIGURE 2-15: Thermistor Reference Voltage (VTHREF) vs. Supply Voltage (VDD). DS21823D-page 8 8.8 9.2 9.6 10.0 10.4 10.8 11.2 11.6 12.0 VDD (V) FIGURE 2-18: Thermistor Reference Voltage (VTHREF) vs. Supply Voltage (VDD). 2003-2013 Microchip Technology Inc. MCP73841/2/3/4 Note: Unless otherwise indicated, VDD = [VREG(Typ) + 1V], IOUT = 10 mA and TA= +25°C. VDD VDD VBAT VBAT MCP73841-4.2V VDD Stepped From 5.2V to 6.2V IOUT = 500 mA COUT = 10 µF, X7R, Ceramic MCP73841-4.2V VDD Stepped From 5.2V to 6.2V IOUT = 10 mA COUT = 10 µF, X7R, Ceramic FIGURE 2-19: Line Transient Response. MCP73841-4.2V VDD = 5.2V COUT = 10 µF, X7R, Ceramic FIGURE 2-22: MCP73841-4.2V VDD = 5.2V COUT = 10 µF, X7R, Ceramic VBAT 100 mA Line Transient Response. IOUT 500 mA FIGURE 2-23: 0 0 -10 -10 -20 -30 -40 MCP73841-4.2V VDD = 5.2 V VAC = 100 mVp-p IOUT = 10 mA COUT = 10 µF, X7R, CERAMIC -60 -70 -80 0.01 0.1 1 10 100 1000 Attenuation (dB) Attenuation (dB) Load Transient Response. -50 Power Supply Ripple 2003-2013 Microchip Technology Inc. Load Transient Response. -20 -30 -40 MCP73841-4.2V VDD = 5.2 V VAC = 100 mVp-p IOUT = 100 mA COUT = 10 µF, X7R, CERAMIC -50 -60 -70 -80 0.01 Frequency (kHz) FIGURE 2-21: Rejection. IOUT 10 mA 10 mA FIGURE 2-20: VBAT 0.1 1 10 100 1000 Frequency (kHz) FIGURE 2-24: Rejection. Power Supply Ripple DS21823D-page 9 MCP73841/2/3/4 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN DESCRIPTION TABLE MCP73841, MCP73842 Pin No. MCP73843, MCP73844 Pin No. Name 1 1 SENSE 2 2 VDD 3 3 STAT1 4 4 EN 3.1 Function Charge Current Sense Input Battery Management Input Supply Charge Status Output Logic Enable 5 — THREF Cell Temperature Sensor Bias 6 — THERM Cell Temperature Sensor Input 7 5 TIMER Timer Set 8 6 VSS Battery Management 0V Reference 9 7 VBAT Battery Voltage Sense 10 8 DRV Drive Output Charge Current Sense Input (SENSE) Charge current is sensed via the voltage developed across an external precision sense resistor. The sense resistor must be placed between the supply voltage (VDD) and the external pass transistor (Q1). A 220 m sense resistor produces a fast charge current of 500 mA, typically. 3.6 Cell Temperature Sensor Input (THERM) Input for an external thermistor for continuous celltemperature monitoring and pre-qualification. Apply a voltage equal to 0.85V to disable temperature-sensing. 3.7 Timer Set (TIMER) All safety timers are scaled by CTIMER/0.1 µF. 3.2 Battery Management Input Supply (VDD) A supply voltage of [VREG(Typ) + 0.3V] to 12V is recommended. Bypass to VSS with a minimum of 4.7 µF. 3.8 Connect to negative terminal of battery. 3.9 3.3 Charge Status Output (STAT1) Battery Management 0V Reference (VSS) Battery Voltage Sense (VBAT) Current limited, open-drain drive for direct connection to a LED for charge status indication. Alternatively, a pull-up resistor can be applied for interfacing to a host microcontroller. Voltage sense input. Connect to positive terminal of battery. Bypass to VSS with a minimum of 4.7 µF to ensure loop stability when the battery is disconnected. A precision internal resistor divider regulates the final voltage on this pin to VREG. 3.4 3.10 Logic Enable (EN) Input to force charge termination, initiate charge, clear faults or disable automatic recharge. 3.5 Drive Output (DRV) Direct output drive of an external P-channel MOSFET for current and voltage regulation. Cell Temperature Sensor Bias (THREF) Voltage reference to bias external thermistor for continuous cell temperature monitoring and prequalification. DS21823D-page 10 2003-2013 Microchip Technology Inc. MCP73841/2/3/4 4.0 DEVICE OVERVIEW The MCP7384X family of devices are highly advanced, linear charge management controllers. Figure 4-1 depicts the operational flow algorithm from charge initiation to completion and automatic recharge. 4.1 Charge Qualification and Preconditioning Upon insertion of a battery or application of an external supply, the MCP7384X family of devices automatically perform a series of safety checks to qualify the charge. The input source voltage must be above the undervoltage lockout threshold, the enable pin must be above the logic-high level and the cell temperature monitor must be within the upper and lower thresholds. The cell temperature monitor applies to both the MCP73841 and MCP73842, with the qualification parameters being continuously monitored. Deviation beyond the limits automatically suspends or terminates the charge cycle. Once the qualification parameters have been met, the MCP7384X initiates a charge cycle. The charge status output is pulled low throughout the charge cycle (see Table 5-1 for charge status outputs). If the battery voltage is below the preconditioning threshold (VPTH), the MCP7384X preconditions the battery with a tricklecharge. The preconditioning current is set to approximately 10% of the fast charge regulation current. The preconditioning trickle-charge safely replenishes deeply depleted cells and minimizes heat dissipation in the external pass transistor during the initial charge cycle. If the battery voltage has not exceeded the preconditioning threshold before the preconditioning timer has expired, a fault is indicated and the charge cycle is terminated. 4.2 4.3 Constant-Voltage Regulation When the battery voltage reaches the regulation voltage (VREG), constant-voltage regulation begins. The MCP7384X monitors the battery voltage at the VBAT pin. This input is tied directly to the positive terminal of the battery. The MCP7384X is offered in four fixed-voltage versions for single or dual series cell battery packs with either coke or graphite anodes: - 4.4 4.1V (MCP73841-4.1, MCP73843-4.1) 4.2V (MCP73841-4.2, MCP73843-4.2) 8.2V (MCP73842-8.2, MCP73844-8.2) 8.4V (MCP73842-8.4, MCP73844-8.4) Charge Cycle Completion and Automatic Re-Charge The MCP7384X monitors the charging current during the constant-voltage regulation phase. The charge cycle is considered complete when the charge current has diminished below approximately 7% of the regulation current (IREG) or the elapsed timer has expired. The MCP7384X automatically begins a new charge cycle when the battery voltage falls below the recharge threshold (VRTH), assuming all the qualification parameters are met. Constant-Current Regulation – Fast Charge Preconditioning ends and fast charging begins, when the battery voltage exceeds the preconditioning threshold. Fast charge regulates to a constant-current, IREG, based on the supply voltage minus the voltage at the SENSE input (VFCS) developed by the drop across an external sense resistor (RSENSE). Fast charge continues until the battery voltage reaches the regulation voltage (VREG); or until the fast charge timer expires. In this case, a fault is indicated and the charge cycle is terminated. 2003-2013 Microchip Technology Inc. DS21823D-page 11 2003-2013 Microchip Technology Inc. Initialize Note: The qualification parameters are continuously monitored throughout the charge cycle. Note VDD > VUVLO EN High No STAT1 = Off Yes Note Temperature OK Yes Preconditioning Phase Charge Current = IPREG Reset Safety Timer No VBAT > VPTH No STAT1 = Flashing Charge Current = 0 STAT1 = On Yes VBAT > VPTH Constant-Current Phase Charge Current = IREG Reset Safety Timer Yes VBAT = VREG No No Yes DS21823D-page 12 FIGURE 4-1: IOUT < ITERM Elapsed Timer Expired Yes No Yes Fault Charge Current = 0 Reset Safety Timer Yes Safety Timer Expired No No Yes Temperature OK No STAT1 = Flashing Safety Timer Suspended Charge Current = 0 Yes VDD < VUVLO Temperature OK Temperature OK or EN Low No No No Yes STAT1 = Flashing STAT1 = Flashing STAT1 = Flashing Safety Timer Suspended Safety Timer Suspended Charge Current = 0 Charge Current = 0 Operational Flow Algorithm - MCP73841 and MCP73842. Yes Charge Termination Charge Current = 0 Reset Safety Timer VDD < VUVLO VBAT < VRTH or EN Low Yes No STAT1 = Off MCP73841/2/3/4 Safety Timer Expired Constant-Voltage Phase Output Voltage = VREG MCP73841/2/3/4 5.0 DETAILED DESCRIPTION 5.1 Analog Circuitry 5.1.1 For NTC thermistors: 2 RCOLD RHOT R T1 = ---------------------------------------------RCOLD – RHOT CHARGE CURRENT SENSE INPUT (SENSE) Fast charge current regulation is maintained by the voltage drop developed across an external sense resistor (RSENSE) applied to the SENSE input pin. The following formula calculates the value for RSENSE: 2 RCOLD RHOT R T2 = ---------------------------------------------RCOLD – 3 RHOT For PTC thermistors: 2 RCOLD RHOT R T1 = ---------------------------------------------RHOT – RCOLD V FCS RSENSE = -----------I REG 2 RCOLD RHOT R T2 = ---------------------------------------------RHOT – 3 RCOLD where: IREG is the desired fast charge current in amps The preconditioning trickle-charge current and the charge termination current are scaled to approximately 10% and 7% of IREG , respectively. 5.1.2 BATTERY MANAGEMENT INPUT SUPPLY (VDD) The VDD input is the input supply to the MCP7384X. The MCP7384X automatically enters a power-down mode if the voltage on the VDD input falls below the undervoltage lockout voltage (VSTOP). This feature prevents draining the battery pack when the VDD supply is not present. 5.1.3 CELL TEMPERATURE SENSOR BIAS (THREF) A 2.55V voltage reference is provided to bias an external thermistor for continuous cell temperature monitoring and pre-qualification. A ratio metric window comparison is performed at threshold levels of VTHREF/2 and VTHREF/4. Cell temperature monitoring is provided by both the MCP73841 and MCP73842. 5.1.4 CELL TEMPERATURE SENSOR INPUT (THERM) The MCP73841 and MCP73842 continuously monitor temperature by comparing the voltage between the THERM input and VSS with the upper and lower temperature thresholds. A negative or positive temperature coefficient (NTC or PTC) thermistor and an external voltage divider typically develop this voltage. The temperature-sensing circuit has its own reference, to which it performs a ratio metric comparison. Therefore, it is immune to fluctuations in the supply input (VDD). The temperature-sensing circuit is removed from the system when VDD is not applied, eliminating additional discharge of the battery pack. where: RCOLD and RHOT are the thermistor resistance values at the temperature window of interest. Applying a voltage equal to 0.85V to the THERM input disables temperature monitoring. 5.1.5 TIMER SET INPUT (TIMER) The TIMER input programs the period of the safety timers by placing a timing capacitor (CTIMER) between the TIMER input pin and VSS. Three safety timers are programmed via the timing capacitor. The preconditioning safety timer period: C TIMER tPRECON = ------------------- 1.0Hour s 0.1F The fast charge safety timer period: C TIMER t FAST = ------------------- 1.5Hours 0.1F The elapsed time termination period: C TIMER t TERM = ------------------- 3.0Hours 0.1F The preconditioning timer starts after qualification and resets when the charge cycle transitions to the constant-current, fast charge phase. The fast charge and elapsed timers start once the MCP7384X transitions from preconditioning. The fast charge timer resets when the charge cycle transitions to the constant-voltage phase. The elapsed timer will expire and terminate the charge if the sensed current does not diminish below the termination threshold. Figure 6-1 depicts a typical application circuit with connection of the THERM input. The resistor values of RT1 and RT2 are calculated with the following equations. 2003-2013 Microchip Technology Inc. DS21823D-page 13 MCP73841/2/3/4 5.1.6 BATTERY VOLTAGE SENSE (VBAT) The MCP7384X monitors the battery voltage at the VBAT pin. This input is tied directly to the positive terminal of the battery. The MCP7384X is offered in four fixed-voltage versions for single or dual series cell battery packs, with either coke or graphite anodes: - 4.1V (MCP73841-4.1, MCP73843-4.1) 4.2V (MCP73841-4.2, MCP73843-4.2) 8.2V (MCP73842-8.2, MCP73844-8.2) 8.4V (MCP73842-8.4, MCP73844-8.4) 5.1.7 DRIVE OUTPUT (DRV) The MCP7384X controls the gate drive to an external P-channel MOSFET. The P-channel MOSFET is controlled in the linear region regulating current and voltage supplied to the cell. The drive output is automatically turned off when the voltage on the VDD input falls below the undervoltage lockout voltage (VSTOP). 5.2 5.2.1 Digital Circuitry CHARGE STATUS OUTPUT (STAT1) A status output provides information on the state-ofcharge. The current-limited, open-drain output can be used to illuminate an external LED. Optionally, a pull-up resistor can be used on the output for communication with a host microcontroller. Table 5-1 summarizes the state of the status output during a charge cycle. TABLE 5-1: STATUS OUTPUTS Charge Cycle State Stat1 Qualification OFF Preconditioning ON Constant-Current Fast Charge ON Constant-Voltage ON Charge Complete OFF Safety Timer Fault Flashing (1 Hz, 50% duty cycle) Cell Temperature Invalid Flashing (1 Hz, 50% duty cycle) Disabled - Sleep mode OFF Battery Disconnected OFF The flashing rate (1 Hz) is based off a timer capacitor (CTIMER) of 0.1 µF. The rate will vary based on the value of the timer capacitor. 5.2.2 LOGIC ENABLE (EN) The logic-enable input pin (EN) can be used to terminate a charge anytime during the charge cycle, initiate a charge cycle or initiate a recharge cycle. Applying a logic-high input signal to the EN pin, or tying it to the input source, enables the device. Applying a logic-low input signal disables the device and terminates a charge cycle. When disabled, the device’s supply current is reduced to 0.25 µA, typically. DS21823D-page 14 2003-2013 Microchip Technology Inc. MCP73841/2/3/4 6.0 APPLICATIONS cells: constant-current followed by constant-voltage. Figure 6-1 depicts a typical stand-alone application circuit, while Figure 6-2 depicts the accompanying charge profile. The MCP7384X is designed to operate in conjunction with either a host microcontroller or in stand-alone applications. The MCP7384X provides the preferred charge algorithm for Lithium-Ion and Lithium-Polymer Voltage Regulated Wall Cube Optional Reverse Blocking Diode Q1 RSENSE SENSE VDD STAT1 RT1 10 DRV VBAT 1 2 9 3 MCP73841 8 EN 4 THREF 5 7 VSS TIMER CTIMER 6 THERM RT2 FIGURE 6-1: + - Battery Pack Typical Application Circuit. Preconditioning Phase Constant-Current Phase Constant-Voltage Phase Regulation Voltage (VREG) Regulation Current (IREG) Charge Voltage Transition Threshold (VPTH) Charge Current Precondition Current (IPREG) Termination Current (ITERM) Precondition Safety Timer Fast Charge Safety Timer Elapsed Time Termination Timer FIGURE 6-2: Typical Charge Profile. 2003-2013 Microchip Technology Inc. DS21823D-page 15 MCP73841/2/3/4 6.1 Application Circuit Design Due to the low efficiency of linear charging, the most important factors are thermal design and cost, which are a direct function of the input voltage, output current and thermal impedance between the external P-channel pass transistor and the ambient cooling air. The worstcase situation occurs when the device has transitioned from the preconditioning phase to the constant-current phase. In this situation, the P-channel pass transistor has to dissipate the maximum power. A trade-off must be made between the charge current, cost and thermal requirements of the charger. 6.1.1 External Pass Transistor The external P-channel MOSFET is determined by the gate-to-source threshold voltage, input voltage, output voltage and fast charge current. Therefore, the selected P-channel MOSFET must satisfy the thermal and electrical design requirements. Thermal Considerations The worst-case power dissipation in the external pass transistor occurs when the input voltage is at the maximum and the device has transitioned from the preconditioning phase to the constant-current phase. In this case, the power dissipation is: COMPONENT SELECTION Selection of the external components in Figure 6-1 are crucial to the integrity and reliability of the charging system. The following discussion is intended to be a guide for the component selection process. 126.96.36.199 188.8.131.52 Sense Resistor The preferred fast charge current for Lithium-Ion cells is at the 1C rate, with an absolute maximum current at the 2C rate. For example, a 500 mAh battery pack has a preferred fast charge current of 500 mA. Charging at this rate provides the shortest charge cycle times without degradation to the battery pack performance or life. The current sense resistor (RSENSE) is calculated by: V FCS RSENSE = -----------I REG PowerDissipation = V DDMAX –V PTHMIN I REGMAX Where: VDDMAX is the maximum input voltage. IREGMAX is the maximum fast charge current. VPTHMIN is the minimum transition threshold voltage. Power dissipation with a 5V, ±10% input voltage source, 220 m, 1% sense resistor is: PowerDissipation = 5.5V – 2.75V 551mA = 1.52W Utilizing a Fairchild™ NDS8434 or an International Rectifier IRF7404 mounted on a 1in2 pad of 2 oz. copper, the junction temperature rise is 75°C, approximately. This would allow for a maximum operating ambient temperature of 75°C. Where: IREG is the desired fast charge current. By increasing the size of the copper pad, a higher ambient temperature can be realized, or a lower value sense resistor could be utilized. For the 500 mAh battery pack example, a standard value 220 m, 1% resistor provides a typical fast charge current of 500 mA and a maximum fast charge current of 551 mA. Worst-case power dissipation in the sense resistor is: Alternatively, different package options can be utilized for more or less power dissipation. Again, design tradeoffs should be considered to minimize size while maintaining the desired performance. 2 PowerDissipation = 220m 551mA = 66.8mW A Panasonic® ERJ-6RQFR22V, 220 mW, 1%, 1/8W resistor in a standard 0805 package is more than sufficient for this application. A larger value sense resistor will decrease the fast charge current and power dissipation in both the sense resistor and external pass transistor, but will increase charge cycle times. Design trade-offs must be considered to minimize space while maintaining the desired performance. Electrical Considerations The gate-to-source threshold voltage and RDSON of the external P-channel MOSFET must be considered in the design phase. The worst-case VGS provided by the controller occurs when the input voltage is at the minimum and the fast charge current regulation threshold is at the maximum. The worst-case VGS is: V GS = V DRVMAX – V DDMIN – VFCSMAX Where: VDRVMAX is the maximum sink voltage at the VDRV output VDDMIN is the minimum input voltage source VFCSMAX is the maximum fast charge current regulation threshold DS21823D-page 16 2003-2013 Microchip Technology Inc. MCP73841/2/3/4 Worst-case VGS with a 5V, ±10% input voltage source and a maximum sink voltage of 1.0V is: V GS = 1.0V – 4.5V – 120mV = – 3.38V At this worst-case (VGS) the RDSON of the MOSFET must be low enough as to not impede the performance of the charging system. The maximum allowable RDSON at the worst-case VGS is: VDDMIN – VFCSMAX – V BATMAX RDSON = ------------------------------------------------------------------------------I REGMAX 4.5V – 120 115 mV – 4.221V = 288m R DSON = -----------------------------------------------------------------------551 581 mA The Fairchild NDS8434 and International Rectifier IRF7404 both satisfy these requirements. 184.108.40.206 EXTERNAL CAPACITORS The MCP7384X are stable with or without a battery load. In order to maintain good AC stability in the Constant-Voltage mode, a minimum capacitance of 4.7 µF is recommended to bypass the VBAT pin to VSS. This capacitance provides compensation when there is no battery load. Additionally, the battery and interconnections appear inductive at high frequencies. These elements are in the control feedback loop during Constant-Voltage mode. Therefore, the bypass capacitance may be necessary to compensate for the inductive nature of the battery pack. 220.127.116.11 ENABLE INTERFACE In the stand-alone configuration, the enable pin is generally tied to the input voltage. The MCP7384X automatically enters a Low-power mode when voltage on the VDD input falls below the undervoltage lockout voltage (VSTOP), reducing the battery drain current to 0.4 µA, typically. 18.104.22.168 CHARGE STATUS INTERFACE A status output provides information on the state of charge. The current-limited, open-drain output can be used to illuminate an external LED. Refer to Table 5-1 for a summary of the state of the status output during a charge cycle. 6.2 PCB Layout Issues For optimum voltage regulation, place the battery pack as close as possible to the device’s VBAT and VSS pins. This is recommended to minimize voltage drops along the high current-carrying PCB traces. If the PCB layout is used as a heatsink, adding many vias around the external pass transistor can help conduct more heat to the back plane of the PCB, thus reducing the maximum junction temperature. Virtually any good quality output filter capacitor can be used, independent of the capacitor’s minimum ESR (Effective Series Resistance) value. The actual value of the capacitor and its associated ESR depends on the forward transconductance (gm) and capacitance of the external pass transistor. A 4.7 µF tantalum or aluminum electrolytic capacitor at the output is usually sufficient to ensure stability for up to a 1A output current. 22.214.171.124 REVERSE-BLOCKING PROTECTION The optional reverse-blocking protection diode, depicted in Figure 6-1, provides protection from a faulted or shorted input, or from a reversed-polarity input source. Without the protection diode, a faulted or shorted input would discharge the battery pack through the body diode of the external pass transistor. If a reverse-protection diode is incorporated into the design, it should be chosen to handle the fast charge current continuously at the maximum ambient temperature. In addition, the reverse-leakage current of the diode should be kept as small as possible. 2003-2013 Microchip Technology Inc. DS21823D-page 17 MCP73841/2/3/4 7.0 PACKAGING INFORMATION 7.1 Package Marking Information 8-Lead MSOP (MCP73843, MCP73844) Example: 738431 0319256 XXXXX YWWNNN 10-Lead MSOP (MCP73841, MCP73842) Example: XXXXX YYWWNNN 738411 0319256 Legend: XX...X Y YY WW NNN Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. e3 * Note: DS21823D-page 18 In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 2003-2013 Microchip Technology Inc. MCP73841/2/3/4 8-Lead Plastic Micro Small Outline Package (MS) (MSOP) Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging E E1 p D 2 B n 1 α A2 A c φ A1 (F) L β Units Dimension Limits n p MIN INCHES NOM MAX MILLIMETERS* NOM 8 0.65 BSC 0.85 0.75 0.00 4.90 BSC 3.00 BSC 3.00 BSC 0.60 0.40 0.95 REF 0° 0.08 0.22 5° 5° - MIN Number of Pins 8 Pitch .026 BSC Overall Height A .043 A2 Molded Package Thickness .037 .030 .033 Standoff A1 .006 .000 Overall Width E .193 TYP. Molded Package Width E1 .118 BSC Overall Length D .118 BSC Foot Length L .016 .024 .031 Footprint (Reference) F .037 REF φ 0° 8° Foot Angle c .003 .006 .009 Lead Thickness .009 .012 .016 Lead Width B α 5° 15° Mold Draft Angle Top β Mold Draft Angle Bottom 5° 15° *Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side. MAX 1.10 0.95 0.15 0.80 8° 0.23 0.40 15° 15° JEDEC Equivalent: MO-187 Drawing No. C04-111 2003-2013 Microchip Technology Inc. DS21823D-page 19 MCP73841/2/3/4 10-Lead Plastic Micro Small Outline Package (UN) (MSOP) Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging E E1 p D 2 B n 1 α A φ c A2 A1 L (F) β L1 Units Dimension Limits n p MIN INCHES NOM 10 .020 TYP .033 .193 BSC .118 BSC .118 BSC .024 .037 REF .009 - MAX MILLIMETERS* NOM 10 0.50 TYP. 0.75 0.85 0.00 4.90 BSC 3.00 BSC 3.00 BSC 0.40 0.60 0.95 REF 0° 0.08 0.15 0.23 5° 5° MIN Number of Pins Pitch Overall Height A .043 Molded Package Thickness .037 A2 .030 Standoff .006 A1 .000 Overall Width E Molded Package Width E1 Overall Length D .031 L Foot Length .016 Footprint F φ 0° 8° Foot Angle c Lead Thickness .003 .009 B Lead Width .006 .012 α 5° 15° Mold Draft Angle Top β 5° 15° Mold Draft Angle Bottom *Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side. MAX 1.10 0.95 0.15 0.80 8° 0.23 0.30 15° 15° JEDEC Equivalent: MO-187 Drawing No. C04-021 DS21823D-page 20 2003-2013 Microchip Technology Inc. MCP73841/2/3/4 8.0 REVISION HISTORY Revision D (January 2013) Added a note to each package outline drawing. 2003-2013 Microchip Technology Inc. DS21823D-page 21 MCP73841/2/3/4 DS21823D-page 22 2003-2013 Microchip Technology Inc. MCP73841/2/3/4 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. XXX X XX Device Preset Voltage Options Temperature Range Package Device MCP73841: MCP73842: MCP73842T: MCP73843: MCP73843T: MCP73844: MCP73844T: 410 420 820 840 Temperature Range I Package MS UN a) b) c) d) MCP73841T: Preset Voltage Regulation Options Examples: = = = = Single-cell charge controller with temperature monitor Single-cell charge controller with temperature monitor, Tape and Reel Dual series cells charge controller with temperature monitor Dual series cells charge controller with temperature monitor, Tape and Reel Single-cell charge controller Single-cell charge controller, Tape and Reel Dual series cells charge controller Dual series cells charge controller, Tape and Reel 4.1V 4.2V 8.2V 8.4V = -40C to +85C (Industrial) a) b) c) d) a) b) c) d) a) b) c) d) MCP73841-410I/UN: 4.1V Preset Voltage MCP73841T-410I/UN: 4.1V Preset Voltage, Tape and Reel MCP73841-420I/UN: 4.2V Preset Voltage MCP73841T-420I/UN: 4.2V Preset Voltage, Tape and Reel MCP73842-820I/UN: 8.2V Preset Voltage MCP73842T-820I/UN: 8.2V Preset Voltage, Tape and Reel MCP73842-840I/UN: 8.4V Preset Voltage MCP73842T-840I/UN: 8.4V Preset Voltage, Tape and Reel MCP73843-410I/MS: 4.1V Preset Voltage MCP73843T-410I/MS: 4.1V Preset Voltage, Tape and Reel MCP73843-420I/MS: 4.2V Preset Voltage MCP73843T-420I/MS: 4.2V Preset Voltage, Tape and Reel MCP73844-820I/MS: 8.2V Preset Voltage MCP73844T-820I/MS: 8.2V Preset Voltage, Tape and Reel MCP73844-840I/MS: 8.4V Preset Voltage MCP73844T-840I/MS: 8.4V Preset Voltage, Tape and Reel = Plastic Micro Small Outline (MSOP), 8-lead = Plastic Micro Small Outline (MSOP), 10-lead Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. Your local Microchip sales office The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products. 2003-2013 Microchip Technology Inc. DS21823D-page 23 MCP73841/2/3/4 NOTES: DS21823D-page 24 2003-2013 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, dsPIC, FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MTP, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. Analog-for-the-Digital Age, Application Maestro, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O, Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA and Z-Scale are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. GestIC and ULPP are registered trademarks of Microchip Technology Germany II GmbH & Co. & KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2003-2013, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 9781620769027 QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 == 2003-2013 Microchip Technology Inc. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. 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