2.4 GHz High-Power, High-Gain Power Amplifier SST12LP19E Data Sheet SST12LP19E is a versatile power amplifier based on the highly-reliable InGaP/ GaAs HBT technology. SST12LP19E is a 2.4 GHz fully-integrated, high-power, high-gain Power Amplifier module designed in compliance with IEEE 802.11b/g/n applications. It typically provides 25 dB gain with 34% power-added efficiency. SST12LP19E has excellent linearity while meeting 802.11g spectrum mask at 23.5 dBm and 802.11b spectrum mask at 23 dBm. This power amplifier includes a power detector with dB-wise linear voltage output and features easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin. SST12LP19E and is offered in 6-contact XSON, 8-contact XSON, and 6-contact X2SON packages. Features • Excellent RF Stability with Moderate Gain: • Low Shut-down Current (~2 µA) – Typically 25 dB gain across 2.4 – 2.5 GHz • High temperature stability • High linear output power: – ~1 dB gain/power variation between 0°C to +85°C – >26 dBm P1dB - Please refer to “Absolute Maximum Stress Ratings” on page 6 – Meets 802.11g OFDM ACPR requirement up to 23.5 dBm – ~2.5% added EVM up to 18 dBm (high-efficiency configuration) or ~3% added EVM up to 19.5 dBm (highpower configuration) for 54 Mbps 802.11g signal – Meets 802.11b ACPR requirement up to 23 dBm • High power-added efficiency/Low operating current for 802.11b/g/n applications – ~34%/200 mA @ POUT = 23.5 dBm for 802.11g – ~31%/195 mA @ POUT = 23 dBm for 802.11b • Excellent On-chip power detection – 20 dB dynamic range on-chip power detection – dB-wise linear output voltage – Temperature stable and load insensitive • Simple input/output matching • Packages available – 8-contact XSON – 2mm x 2mm x 0.5 mm max – 6-contact XSON – 1.5mm x 1.5mm x 0.5 mm max – 6-contact X2SON – 1.5mm x 1.5mm x 0.4mm max • All non-Pb (lead-free) devices are RoHS compliant • Single-pin low IREF power-up/down control – IREF <2 mA Applications • Low idle current – ~40-65 mA ICQ, depending on package type and configuration. • Home RF • High-speed power-up/down – Turn on/off time (10%- 90%) <100 ns – Typical power-up/down delay with driver delay included <200 ns ©2013 Silicon Storage Technology, Inc. • WLAN (IEEE 802.11b/g/n) • Cordless phones • 2.4 GHz ISM wireless equipment www.microchip.com DS70005041C 05/13 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP19E Data Sheet Product Description SST12LP19E is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology. SST12LP19E can be easily configured for high-power applications with good power-added efficiency while operating over the 2.4- 2.5 GHz frequency band. It typically provides 25 dB gain with 34% power-added efficiency (PAE) @ POUT = 23.5 dBm for 802.11g and 31% PAE @ POUT = 23 dBm for 802.11b. This device has excellent linearity, typically ~3% added EVM at 19.5 dBm output power which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 23.5 dBm and 802.11b spectrum mask at 23 dBm. SST12LP19E can also be easily configured for high-efficiency operation, typically ~2.5% added EVM at 18 dBm output power and 92 mA total power consumption for 54 Mbps 802.11g applications. High-efficiency operation is desirable in embedded applications, such as in hand-held units, where SST12LP19E can provide 25 dB gain and meet 802.11b/g/n spectrum mask at 22 dBm output power with 34% PAE. This power amplifier also features easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin. Ultra-low reference current (total IREF ~2 mA) makes the SST12LP19E controllable by an on/off switching signal directly from the baseband chip. These features coupled with low operating current make the SST12LP19E ideal for the final stage power amplification in batterypowered 802.11b/g/n WLAN transmitter applications. SST12LP19E has an excellent on-chip, single-ended power detector, which features wide-range (>15 dB) with dB-wise linear output voltage. The excellent on-chip power detector provides a reliable solution to boardlevel power control. The SST12LP19E is offered in 8-contact XSON, 6-contact XSON, and 6-contact X2SON packages. See Figure 3 for pin assignments and Tables 1 and 2 for pin descriptions. ©2013 Silicon Storage Technology, Inc. DS70005041C 2 05/13 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP19E Data Sheet Functional Blocks VCC1 1 8 VCC2 RFIN 2 7 RFOUT VCCb 3 6 RFOUT 5 DET Bias Circuit VREF 4 1423 F1.1 Figure 1: Functional Block Diagram 8-Contact XSON (QX8) VCC1 1 6 VCC2/RFOUT RFIN 2 5 DET VCCb 3 4 VREF Bias Circuit 1423 F2.1 Figure 2: Functional Block Diagram 6-Contact XSON (QX6) and 6-contact X2SON (NR) ©2013 Silicon Storage Technology, Inc. DS70005041C 3 05/13 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP19E Data Sheet Pin Assignments VCC1 1 8 VCC2 7 RFOUT 6 RFOUT 5 DET Top View RFIN 2 VCCb 3 VREF 4 (Contacts facing down) RF & DC Ground 0 1423 F3a.0 8-Contact XSON VCC1 1 RFIN 2 6 VCC2/RFOUT 5 DET 4 VREF Top View VCCb (Contacts facing down) RF & DC Ground 0 3 1423 F3b.0 6-Contact XSON and 6-Contact X2SON Figure 3: Pin Assignments ©2013 Silicon Storage Technology, Inc. DS70005041C 4 05/13 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP19E Data Sheet Pin Descriptions Table 1: Pin Description, 8-contact XSON (QX8) Symbol Pin No. Pin Name Type1 Function GND 0 Ground VCC1 1 Power Supply PWR Power supply, 1st stage Low inductance ground pad I RF input, DC decoupled Power Supply PWR Supply voltage for bias circuit 1st and 2nd stage idle current control RFIN 2 VCCb 3 VREF 4 PWR Det 5 O On-chip power detector RFOUT 6 O RF output RFOUT 7 O RF output VCC2 8 Power Supply PWR Power supply, 2nd stage T1.0 75041 1. I=Input, O=Output Table 2: Pin Description, 6-contact XSON (QX6) and 6-contact X2SON(NR) Symbol Pin No. GND 0 Ground VCC1 1 Power Supply RFIN 2 VCCb 3 VREF 4 Det 5 VCC2/ RFOUT 6 Type1 Pin Name Function Low inductance ground pad Power Supply PWR Power supply, 1st stage I RF input, DC decoupled PWR Supply voltage for bias circuit PWR 1st and 2nd stage idle current control O Power Supply PWR/O On-chip power detector Power supply, 2nd stage/ RF Output T2.0 75041 1. I=Input, O=Output ©2013 Silicon Storage Technology, Inc. DS70005041C 5 05/13 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP19E Data Sheet Electrical Specifications The RF and DC specifications for the power amplifier interface signals. Refer to Table 4 for the DC voltage and current specifications. Refer to Figures 4 through 14 for the RF performance. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Input power to pin 2 (PIN). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dBm Average output power from pins 6 and 7 (POUT)1 for 8-contact XSON . . . . . . . . . . . . . . . . . +26 dBm Average output power from pin 6 (POUT)1 for 6-contact XSON/X2SON. . . . . . . . . . . . . . . . . +26 dBm Supply Voltage to pins1, 3, and 8 (VCC) for 8-contact XSON. . . . . . . . . . . . . . . . . . . . . -0.3V to +4.6V Supply Voltage to pins 1, 3, and 6 (VCC) for 6-contact XSON/X2SON . . . . . . . . . . . . . -0.3V to +4.6V Reference voltage to pin 4 (VREF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.3V DC supply current (ICC)2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mA Operating Temperature (TA). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC Maximum Junction Temperature (TJ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+150ºC Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds 1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the maximum rating of average output power could cause permanent damage to the device. 2. Measured with 100% duty cycle 54 Mbps 802.11g OFDM Signal Table 3: Operating Range Range Ambient Temp VDD Industrial -40°C to +85°C 3.3V T3.1 75041 ©2013 Silicon Storage Technology, Inc. DS70005041C 6 05/13 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP19E Data Sheet Table 4: DC Electrical Characteristics at 25°C Symbol VCC ICQ ICC (802.11g) ICC (802.11g Mask) ICC (802.11b Mask) Min. Typ Max. Supply Voltage at pins1, 3, and 8 for 8-contact XSON Parameter 3.0 3.3 4.2 V Figures 15 and 16 Supply Voltage at pins 1, 3, 6 for 6-contact XSON/ X2SON 3.0 3.3 4.2 V Figures 17 and 18 mA Figure 15 Idle current to meet EVM ~3% @ 19.5 dBm for 8-contact XSON1 60 Idle current to meet EVM ~2.5% @ 18 dBm for 8-contact XSON1 45 Idle current to meet EVM ~3% @ 19.5 dBm for 6-contact XSON/X2SON1 50 mA Figure 17 Idle current to meet EVM ~2.5% @ 18 dBm for 6-contact XSON/X2SON1 45 mA Figure 18 Current consumption to meet EVM ~3% @ 19.5 dBm for 8-contact XSON1 130 mA Figure 15 Current consumption to meet EVM ~2.5% @18 dBm for 8contact XSON1 92 mA Figure 16 Current consumption to meet EVM ~3% @ 19.5 dBm for 6-contact XSON/X2SON1 132 mA Figure 17 Current consumption to meet EVM ~2.5% @18 dBm for 6contact XSON/X2SON1 90 mA Figure 18 Current consumption to meet Spectrum Mask @23.5 dBm for 8-contact XSON1 200 mA Figure 15 Current consumption to meet Spectrum Mask @22 dBm for 8contact XSON1 140 mA Figure 16 Current consumption to meet Spectrum Mask @23.5 dBm for 6-contact XSON/X2SON1 190 mA Figure 17 Current consumption to meet Spectrum Mask @22 dBm for 6contact XSON/X2SON1 138 mA Figure 18 Current consumption to meet Spectrum Mask @23 dBm for 8-contact XSON2 195 mA Figure 15 Current consumption to meet Spectrum Mask @22 dBm for 8-contact XSON2 140 mA Figure 16 Current consumption to meet Spectrum Mask @23 dBm for 6-contact XSON/X2SON2 185 mA Figure 17 Current consumption to meet Spectrum Mask @22.5 dBm for 6-contact XSON/X2SON2 150 mA Figure 18 Reference Voltage for 8-contact XSON with no resistor VREG Unit Test Conditions Figure 16 2.75 2.85 2.95 V Figure 15 Reference Voltage for 8-contact XSON with300Ω resis- 2.75 tor 2.85 2.95 V Figure 16 Reference Voltage for 6-contact XSON/X2SON with 200Ω resistor 2.75 2.85 2.95 V Figure 17 Reference Voltage for 6-contact XSON/X2SON with 360Ω resistor 2.75 2.85 2.95 V Figure 18 T4.2 75041 1. 802.11g OFDM 54 Mbps signal 2. 802.11b DSSS 1 Mbps signal ©2013 Silicon Storage Technology, Inc. DS70005041C 7 05/13 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP19E Data Sheet Table 5: RF Characteristics at 25°C1 Symbol Parameter Min. FL-U Frequency range 2412 G Small signal gain 24 GVAR1 Gain variation over band (2412–2484 MHz) GVAR2 Gain ripple over channel (20 MHz) 2f, 3f, 4f, 5f Harmonics at 22 dBm, without external filters EVM Typ Unit 2484 MHz ±0.5 dB -30 dBc 25 3 Added EVM @ 18 dBm output power for 8-contact XSON2 2.5 Added EVM @ 19.5 dBm output power for 6-contact XSON/X2SON2 3 Added EVM @ 18 dBm output power for 6-contact XSON/X2SON2 2.5 Test Conditions dB 0.2 Added EVM @ 19.5 dBm output power for 8-contact XSON2 Output power to meet Spectrum Mask for 8-contact XSON2 Max. dB 3 3 % Figure 15 % Figure 16 % Figure 17 % Figure 18 22.5 23.5 dBm Figure 15 21 22 dBm Figure 16 22.5 23.5 dBm Figure 17 Output power to meet Spectrum Mask for 6-contact XSON/X2SON2 21 22 dBm Figure 18 Output power to meet Spectrum Mask for 8-contact XSON3 22 23 dBm Figure 15 Output power to meet Spectrum Mask for 8-contact POUT XSON3 (802.11b Output power to meet Spectrum Mask for 6-contact MASK) XSON/X2SON3 21 22 dBm Figure 16 22 23 dBm Figure 17 21.5 22.5 dBm Figure 18 Output power to meet Spectrum Mask for 8-contact POUT XSON2 (802.11g Output power to meet Spectrum Mask for 6-contact MASK) XSON/X2SON2 Output power to meet Spectrum Mask for 6-contact XSON/X2SON3 T5.2 75041 1. EVM measured with “sequence-only” equalizer channel estimation 2. 802.11g OFDM 54 Mbps signal 3. 802.11b DSSS 1 Mbps signal ©2013 Silicon Storage Technology, Inc. DS70005041C 8 05/13 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP19E Data Sheet Typical Performance Characteristics Test Conditions: VCC = 3.3V, TA = 25°C, unless otherwise specified S11 versus Frequency S12 versus Frequency 0 0 -10 -5 S12 (dB) S11 (dB) -20 -10 -15 -30 -40 -50 -20 -60 -25 -30 0.0 -70 1.0 2.0 3.0 4.0 5.0 6.0 7.0 -80 0.0 8.0 1.0 2.0 3.0 Frequency (GHz) 4.0 5.0 6.0 7.0 8.0 7.0 8.0 Frequency (GHz) S22 versus Frequency S21 versus Frequency 40 0 30 -5 -10 10 S22 (dB) S21 (dB) 20 0 -10 -15 -20 -20 -25 -30 -40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Frequency (GHz) 7.0 8.0 -30 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Frequency (GHz) 1423 S-Parms.1.0 Figure 4: S-Parameters ©2013 Silicon Storage Technology, Inc. DS70005041C 9 05/13 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP19E Data Sheet Typical Performance Characteristics for High-power applications Test Conditions: VCC = 3.3V, TA = 25°C, 54 Mbps 802.11g OFDM Signal, QX6E example EVM versus Output Power EVM (%) 10 9 Freq=2.412 GHz 8 Freq=2.442 GHz 7 Freq=2.472 GHz 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Power (dBm) 1423 F5.1 Figure 5: EVM versus Output Power, measured with Equalizer Channel Estimation set to “sequence only” Power Gain versus Output Power 30 28 Power Gain (dB) 26 24 22 20 18 16 Freq=2.412 GHz Freq=2.442 GHz 14 Freq=2.472 GHz 12 10 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Power (dBm) 1423 F6.0 Figure 6: Power Gain versus Output Power ©2013 Silicon Storage Technology, Inc. DS70005041C 10 05/13 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP19E Data Sheet Supply Current (mA) Supply Current versus Output Power 240 230 220 210 200 190 180 170 160 150 140 130 120 110 100 90 80 70 60 50 40 Freq=2.412 GHz Freq=2.442 GHz Freq=2.472 GHz 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Power (dBm) 1423 F7.0 Figure 7: Total Current Consumption for 802.11g Operation versus Output Power PAE (%) PAE versus Output Power 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 Freq=2.412 GHz Freq=2.442 GHz Freq=2.472 GHz 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Power (dBm) 1423 F8.0 Figure 8: PAE versus Output Power ©2013 Silicon Storage Technology, Inc. DS70005041C 11 05/13 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP19E Data Sheet Detector Voltage versus Output Power 1.2 1.1 Freq=2.412 GHz Detector Voltage (V) 1.0 Freq=2.442 GHz Freq=2.472 GHz 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Power (dBm) 1423 F9.0 Figure 9: Detector Characteristics versus Output Power Typical Performance Characteristics for High-Efficiency Applications Test Conditions: VCC = 3.3V, TA = 25°C, 54 Mbps 802.11g OFDM Signal, QX6E example EVM versus Output Power EVM (%) 10 9 Freq=2.412 GHz 8 Freq=2.442 GHz 7 Freq=2.472 GHz 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Output Power (dBm) 1423 F10.1 Figure 10: EVM versus Output Power, measured with Equalizer Channel Estimation set to “sequence only” ©2013 Silicon Storage Technology, Inc. DS70005041C 12 05/13 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP19E Data Sheet Power Gain versus Output Power 30 28 Power Gain (dB) 26 24 22 20 18 16 Freq=2.412 GHz 14 Freq=2.442 GHz Freq=2.472 GHz 12 10 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Output Power (dBm) 1423 F11.0 Figure 11:Power Gain versus Output Power Supply Current (mA) Supply Current versus Output Power 180 170 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 Freq=2.412 GHz Freq=2.442 GHz Freq=2.472 GHz 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Output Power (dBm) 1423 F12.0 Figure 12:Total Current Consumption for 802.11g Operation versus Output Power ©2013 Silicon Storage Technology, Inc. DS70005041C 13 05/13 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP19E Data Sheet PAE (%) PAE versus Output Power 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 Freq=2.412 GHz Freq=2.442 GHz Freq=2.472 GHz 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Output Power (dBm) 1423 F13.0 Figure 13:PAE versus Output Power Detector Voltage versus Output Power 1.2 Detector Voltage (V) 1.1 Freq=2.412 GHz 1.0 Freq=2.442 GHz 0.9 Freq=2.472 GHz 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Output Power (dBm) 1423 F14.0 Figure 14:Detector Characteristics versus Output Power ©2013 Silicon Storage Technology, Inc. DS70005041C 14 05/13 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP19E Data Sheet VCC 10 µF 0.1µF 0.1µF 12 nH / 0603 1 50Ω 2 RFIN 8 SST12LP19E 2X2 8L XSON Top View 3 1.0 nH 7 50Ω RFOUT 6 1.8 pF 100 pF 0.1µF 5 4 100 pF R1 = 0 Ω Vdet VREG Test conditions: VCC = 3.3 V VREG = 2.85 V 1423 F15.0 Figure 15:Typical Schematic for 8-Contact XSON (QX8) for High-Power Applications ©2013 Silicon Storage Technology, Inc. DS70005041C 15 05/13 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP19E Data Sheet VCC 10 µF 0.1µF 0.1µF 12 nH / 0603 1 8 50Ω SST12LP19E 2 RFIN 2X2 8L XSON Top View 3 1.0 nH 7 50Ω RFOUT 6 1.5 pF 100 pF 0.1µF 5 4 100 pF R1 = 300Ω Vdet VREG Test conditions: VCC = 3.3 V VREG = 2.85 V 1423 F16.0 Figure 16:Typical Schematic for 8-Contact XSON (QX8) for High-Efficiency Applications ©2013 Silicon Storage Technology, Inc. DS70005041C 16 05/13 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP19E Data Sheet VCC 4.7 µF 0.1µF 0.1µF 12 nH 1.0 nH RFOUT 2 1.5x1.5 6L XSON Top View 100 pF 1.8 pF 12LP19E 50Ω RFIN 50Ω 6 1 Vdet 5 4 3 0.1µF 100 pF R1 = 200 Ω Test conditions: VCC = 3.3 V VREG = 2.85 V VREF 1423 F17.0 Figure 17:Typical Schematic for 6-Contact XSON (QX6) and 6-contact X2SON(NR) for High-Power Applications VCC 4.7 µF 0.1µF 0.1µF 12 nH 1.0 nH RFOUT 2 1.5x1.5 6L XSON Top View 3 100 pF 1.5 pF 12LP19E 50Ω RFIN 50Ω 6 1 Vdet 5 4 0.1µF 100 pF R1 = 360 Ω VREF Test conditions: VCC = 3.3 V VREG = 2.85 V 1423 F18.0 Figure 18:Typical Schematic for 6-Contact XSON (QX6) and 6-contact X2SON(NR) for High-Efficiency Applications ©2013 Silicon Storage Technology, Inc. DS70005041C 17 05/13 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP19E Data Sheet Product Ordering Information SST 12 LP 19E - QX8E XX XX XXX - XXXX Package Type QX8E = XSON, 8 contact QX6E = XSON, 6 contact NR = X2SON, 6 contact Product Family Identifier Product Type P = Power Amplifier Voltage L = 3.0-3.6V Frequency of Operation 2 = 2.4 GHz Product Line 1 = RF Products Valid combinations for SST12LP19E SST12LP19E-QX8E SST12LP19E-QX6E SST12LP19E-NR SST12LP19E Evaluation Kits SST12LP19E-QX8E-K SST12LP19E-QX6E-K SST12LP19E-NR-K Note:Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. ©2013 Silicon Storage Technology, Inc. DS70005041C 18 05/13 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP19E Data Sheet Packaging Diagrams TOP VIEW SIDE VIEW BOTTOM VIEW 2.00 ±0.10 Pin #1 (laser engraved see note 2) 1.55 See notes 3 and 4 Pin # 1 1.60 2.00 ±0.10 0.40 BSC 0.75 0.2 0.08 0.05 Max 0.3 0.50 0.41 1mm 8-xson-2x2-QX8-4.0 Note: 1. 2. 3. 4. Similar to JEDEC JEP95 XQFN/XSON variants, though number of contacts and some dimensions are different. The topside pin #1 indicator is laser engraved; its approximate shape and location is as shown. From the bottom view, the pin #1 indicator may be either a curved indent or a 45-degree chamfer. The external paddle is electrically connected to the die back-side and to VSS. This paddle must be soldered to the PC board; it is required to connect this paddle to the VSS of the unit. Connection of this paddle to any other voltage potential will result in shorts and electrical malfunction of the device. 5 Untoleranced dimensions are nominal target dimensions. 6. All linear dimensions are in millimeters (max/min). Figure 19:8-Contact Extremely-thin Quad Small Outline No-lead (XSON) SST Package Code: QX8 ©2013 Silicon Storage Technology, Inc. DS70005041C 19 05/13 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP19E Data Sheet TOP VIEW SIDE VIEW BOTTOM VIEW 1.50 ±0.10 Pin #1 (laser engraved) See notes 2 and 3 Pin # 1 1.20 1.50 ±0.10 0.75 0.50 BSC 0.70 0.20 0.05 Max 0.20 0.50 0.40 1mm 6-xson-1.5x1.5-QX6-1.0 Note: 1. Similar to JEDEC JEP95 XQFN/XSON variants, though number of contacts and some dimensions are different. 2. From the bottom view, the pin #1 indicator may be either a curved indent or a 45-degree chamfer. 3. The external paddle is electrically connected to the die back-side and to VSS. This paddle must be soldered to the PC board; it is required to connect this paddle to the VSS of the unit. Connection of this paddle to any other voltage potential will result in shorts and electrical malfunction of the device. 4. Untoleranced dimensions are nominal target dimensions. 5. All linear dimensions are in millimeters (max/min). Figure 20:6-Contact Extremely-thin Quad Small Outline No-lead (XSON) SST Package Code: QX6 ©2013 Silicon Storage Technology, Inc. DS70005041C 20 05/13 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP19E Data Sheet ©2013 Silicon Storage Technology, Inc. DS70005041C 21 05/13 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP19E Data Sheet ©2013 Silicon Storage Technology, Inc. DS70005041C 22 05/13 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP19E Data Sheet Table 6:Revision History Revision Description Date 00 • Initial release of data sheet Mar 2010 01 • • • • Revised “Absolute Maximum Stress Ratings” on page 6 Changed Operating range to Industrial on page 6 Updated Table 4 on page 7 Changed document status to “Preliminary Specifications” Mar 2010 02 • Changed document status from “Preliminary Specifications” to “Data Sheet.” Made a minor correction in “Product Description” on page 2 Jul 2010 Jan 2012 • • • Updated Figures 1 and 2 Updated Figures 5 and 10 to show measurements with Equalizer Channel Estimation set to “sequence only” Applied new document format Released document under letter revision system Updated Spec number from S71423 to DS75041 B • Updated Figure 19 on page 19 to reflect new Pin1 indicator Jul 2012 C • Added the X2SON package (package code NR) May 2013 • A • • ISBN:978-1-62077-208-9 © 2013 Silicon Storage Technology, Inc–a Microchip Technology Company. All rights reserved. SST, Silicon Storage Technology, the SST logo, SuperFlash, MTP, and FlashFlex are registered trademarks of Silicon Storage Technology, Inc. MPF, SQI, Serial Quad I/O, and Z-Scale are trademarks of Silicon Storage Technology, Inc. All other trademarks and registered trademarks mentioned herein are the property of their respective owners. Specifications are subject to change without notice. Refer to www.microchip.com for the most recent documentation. For the most current package drawings, please see the Packaging Specification located at http://www.microchip.com/packaging. Memory sizes denote raw storage capacity; actual usable capacity may be less. SST makes no warranty for the use of its products other than those expressly contained in the Standard Terms and Conditions of Sale. For sales office locations and information, please see www.microchip.com. Silicon Storage Technology, Inc. A Microchip Technology Company www.microchip.com ©2013 Silicon Storage Technology, Inc. DS70005041C 23 05/13