4.9-5.9 GHz High-Linearity Power Amplifier SST11CP15E Data Sheet The SST11CP15E is a versatile power amplifier designed for 802.11a/n/ac embedded applications and is based on the highly-reliable InGaP/GaAs HBT technology. It is easily configured for high-linearity, high-efficiency applications over a wide temperature range while operating over the 4.9-5.9 GHz frequency band. The SST11CP15E has excellent linearity while meeting 802.11a spectrum mask at 23 dBm with a 3.3V power supply, and at 24.5 dBm with a 5.0V supply. It provides up to 18 dm, at 3% EVM with 802.11a 54 Mbps, and up to 16 dBm, at 1.8% EVM with 802.11ac 351 Mbps Modulation and 3.3V bias. The power amplifier requires only a 4mA reference current for on/off control. It includes a VSWR/ temperature insensitive, linear power detector. The SST11CP15E is offered in a 12-contact UQFN package. Features • Small package size • 50Ω on-chip input match and simple output match – 12-contact UQFN (2mm x 2mm x 0.6mm max thickness) • Packages available – 12-pin QFN 2mm x 2mm x 0.55mm • Wide operating voltage range • All lead-free devices are RoHS compliant – VCC = 3.0–5.0V • High linear output power, 802.11a/n/ac: – Spectrum mask compliant using 802.11a OFDM - Up to 24 dBm at 5.0V - Up to 22 dBm at 3.3V – Spectrum mask compliant using 802.11n MCS7, 40 MHz - Up to 22 dBm at 5.0V - Up to 19 dBm at 3.3V – ~3% EVM across 5.1-5.9 GHz for 54 Mbps 802.11a - Up to 20 dBm at 5.0V VCC - Up to 18 dBm at 3.3V VCC – 1.8% EVM across 5.1-5.9 GHz for 351 Mbps 802.11ac - Up to 16 dBm at 3.3V VCC • High power-added efficiency/low operating current for 54 Mbps 802.11a applications Applications • WLAN (IEEE 802.11a/n/ac) • Japan WLAN • HyperLAN2 • Multimedia • WiMax – ~10% @ POUT = 19 dBm for 54 Mbps, 3.3V VCC • Gain: – Typically >26 dB gain across broadband 4.9-5.9 GHz, 3.3V VCC • Low idle current – ~140 mA ICQ, 3.3 V VCC • High speed power-up/-down – Turn on/off time (10%~90%) <100 ns • Low shut-down current (<1 µA) • On-chip power detector with -20 dB linear dynamic range – Temperature Stable – VSWR insensitive ©2013 Silicon Storage Technology, Inc. www.microchip.com DS70005025C 05/13 4.9-5.9 GHz High-Linearity Power Amplifier SST11CP15E Data Sheet Product Description The SST11CP15E is a high-linearity power amplifier designed for 802.11 a/n/ac embedded applications. It has low power consumption and is based on the highly-reliable InGaP/GaAs HBT technology. The SST11CP15E offers a wide operating-voltage range from VCC 3.3V to 5.0V. It can be easily configured for high-linearity, high-efficiency applications while operating over the entire 802.11a frequency band for U.S., European, and Japanese markets (4.9-5.9 GHz). The SST11CP15E has excellent linearity, typically ~3% EVM at 19.5 dBm output power for 54 Mbps 802.11a operation, at 5.0V, while meeting 802.11a spectrum mask at 24 dBm. The power amplifier also provides 16 dBm at 1.8% EVM with 802.11ac, 351 Mbps modulation. SST11CP15E includes a wide dynamic-range, linear power detector that is insensitive to temperature and Voltage Standing Wave Ratio (VSWR). The power amplifier IC also features easy board-level operation along with high-speed power-up/down control. Low reference current (typically 4 mA) makes the SST11CP15E controllable by an on/off switching signal directly from the baseband chip. These features coupled with low operating current make the SST11CP15E ideal for the final stage power amplification in battery-powered 802.11a/n/ac WLAN transmitter applications. The SST11CP15E is offered in 12-contact UQFN package with 0.6 mm maximum thickness. See Figure 2 for pin assignments and Table 1 for pin descriptions. ©2013 Silicon Storage Technology, Inc. DS70005025C 2 05/13 4.9-5.9 GHz High-Linearity Power Amplifier SST11CP15E Data Sheet 2 VREF1 3 VCC2 VCC3 10 Input Match Bias Control Power Detection 4 5 6 DET VCCb 11 VREF3 1 12 VREF2 RFIN VCC1 Functional Blocks 9 GND 8 RFOUT 7 NC 75025 B1.0 Figure 1: Functional Block Diagram ©2013 Silicon Storage Technology, Inc. DS70005025C 3 05/13 4.9-5.9 GHz High-Linearity Power Amplifier SST11CP15E Data Sheet RFIN VCC1 VCC2 VCC3 Pin Assignments 12 11 10 1 9 GND 8 RFOUT 7 NC Top View (Contacts facing down) RF and DC GND 0 4 5 6 DET 3 VREF3 VREF1 2 VREF2 VCCb 75025 P1.0 Figure 2: Pin Assignments for 12-contact UQFN ©2013 Silicon Storage Technology, Inc. DS70005025C 4 05/13 4.9-5.9 GHz High-Linearity Power Amplifier SST11CP15E Data Sheet Pin Descriptions Table 1: Pin Description Symbol Pin No. GND 0 RFIN 1 VCCb 2 VREF1 VREF2 Pin Name Type1 Ground The center pad should be connected to RF ground with several low inductance, low resistance vias. I RF input, DC decoupled PWR Supply voltage for bias circuit 3 PWR Current Control 4 PWR Current Control VREF3 5 PWR DET 6 O NC 7 RFOUT 8 Power Supply Function Current Control On-chip power detector No Connection Unconnected pin O RF Output GND 9 Ground VCC3 10 Power Supply PWR Power supply, 3rd stage Ground (NC is acceptable) VCC2 11 Power Supply PWR Power supply, 2nd stage VCC1 12 Power Supply PWR Power supply, 1st stage T1.1 75025 1. I=Input, O=Output ©2013 Silicon Storage Technology, Inc. DS70005025C 5 05/13 4.9-5.9 GHz High-Linearity Power Amplifier SST11CP15E Data Sheet Electrical Specifications The AC and DC specifications for the power amplifier interface signals. Refer to Table 3 for the DC voltage and current specifications. Refer to Figures 8 through 7 for 3.3V VCC RF performance and Figures 8 through 11 for 5.0V VCC RF performance. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Supply Voltage at pins 2, 10, 11, 12 (VCC). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +5.5V DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Operating Temperature (TA). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -20ºC to +85ºC Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC Maximum Junction Temperature (TJ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+150ºC Maximum Output Power. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 dBm Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds Table 2: Operating Range Range Ambient Temp VCC Industrial -20°C to +85°C 3.3V-5.0V T2.1 75025 Table 3: DC Electrical Characteristics Symbol Parameter VCC Supply Voltage at pins 2, 10, 11, 12 ICC Supply Current @ POUT = 18 dBm VCC = 3.3V ICQ Min. Typ Max. Unit 3.0 3.3 5.0 V 220 mA VCC = 4.2V 250 mA VCC3 = 5.0V, VCC1,2 = 3.3V 290 mA 135 mA VCC = 4.2V 170 mA VCC3 = 5.0V, VCC1,2 = 3.3V 195 mA VCC Quiescent Current VCC = 3.3V IOFF Shut down current 1.0 VREG Recommended Reference Voltage VCC = 3.3V 2.85 VCC3 = 5.0V, VCC1,2 = 3.3V 2.90 10 µA V V T3.0 75025 ©2013 Silicon Storage Technology, Inc. DS70005025C 6 05/13 4.9-5.9 GHz High-Linearity Power Amplifier SST11CP15E Data Sheet Table 4: AC Electrical Characteristics for Configuration Parameter Condition Min FL-U Frequency range 4.9 Output power at 3% EVM with 802.11a, 54 Mbps OFDM signal VCC = 3.3V VCC3 = 5.0V, VCC1,2 = 3.3V Linear Power Output power at 3% EVM with MCS7 40 MHz 11n signal VCC = 3.3V Unit 5.9 GHz 17.5 dBm 19.5 dBm 17 dBm dBm Output power at 1.8% EVM, 11ac signal 351 Mbps VCC = 3.3V 16 dBm Output power level with 802.11a mask compliance VCC = 3.3V 22 dBm 24 dBm 19 dBm 22 dBm 27 dB VCC3 = 5.0V, VCC1,2 = 3.3V Output power level with 802.11n mask compliance VCC = 3.3V VCC3 = 5.0V, VCC1,2 = 3.3V Gain Max 19 VCC3 = 5.0V, VCC1,2 = 3.3V ACPR Typ Power gain from 4.9–5.9 GHz VCC = 3.3V VCC3 = 5.0V, VCC1,2 = 3.3V 23 dB T4.1 75025 ©2013 Silicon Storage Technology, Inc. DS70005025C 7 05/13 4.9-5.9 GHz High-Linearity Power Amplifier SST11CP15E Data Sheet Typical Performance Characteristics Test Conditions: VCC = 3.3V, TA = 25°C, VREG = 2.85V unless otherwise noted EVM measurement using sequence-only test configuration EVM versus Output Power 10 EVM (%) 9 8 4920 MHz 7 5180 MHz 6 5500 MHz 5 5850 MHz 4 3 2 1 0 5 6 7 8 9 10 11 12 13 14 15 16 Output Power (dBm) 17 18 19 20 21 75025 F3.0 Figure 3: EVM versus Output Power, 802.11a VCC = 3.3V EVM versus Output Power 10 9 Freq=5.005 GHz 8 Freq=5.18 GHz EVM (%) 7 Freq=5.5 GHz Freq=5.85 GHz 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Output Power (dBm) 75025 F15.0 Figure 4: EVM versus Output Power, 802.11ac, 351 Mbps modulation ©2013 Silicon Storage Technology, Inc. DS70005025C 8 05/13 4.9-5.9 GHz High-Linearity Power Amplifier SST11CP15E Data Sheet Test Conditions: VCC = 3.3V, TA = 25°C, VREG = 2.85V unless otherwise noted Supply Current (mA) Supply Current versus Output Power 260 250 240 230 220 210 200 190 180 170 160 150 140 130 120 110 100 4920 MHz 5180 MHz 5500 MHz 5850 MHz 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 Output Power (dBm) 75025 F4.0 Figure 5: Power Supply Current versus Output Power, VCC = 3.3V Power Gain versus Output Power 31 30 Power Gain (dB) 29 28 27 4920 MHz 26 5180 MHz 25 5500 MHz 24 5850 MHz 23 22 21 20 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 Output Power (dBm) 75025 F5.0 Figure 6: Power Gain versus Output Power, VCC = 3.3V ©2013 Silicon Storage Technology, Inc. DS70005025C 9 05/13 4.9-5.9 GHz High-Linearity Power Amplifier SST11CP15E Data Sheet Test Conditions: VCC = 3.3V, TA = 25°C, VREG = 2.85V unless otherwise noted Detector Voltage versus Output Power 1.30 1.20 Detector Voltage (V) 1.10 1.00 0.90 0.80 0.70 0.60 0.50 4920 MHz 0.40 5500 MHz 0.30 5500 MHz 0.20 5850 MHz 0.10 0.00 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 Output Power (dBm) 75025 F6.0 Figure 7: Detector Voltage vs Output Power, VCC = 3.3V ©2013 Silicon Storage Technology, Inc. DS70005025C 10 05/13 4.9-5.9 GHz High-Linearity Power Amplifier SST11CP15E Data Sheet Typical Performance Characteristics Test Conditions: VCC1,2 = 3.3V, VCC3 = 5.0V, TA = 25°C, VREG = 2.90V unless otherwise noted EVM versus Output Power 10 EVM (%) 9 8 4920 MHz 7 5180 MHz 6 5500 MHz 5 5850 MHz 4 3 2 1 0 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 Output Power (dBm) 75025 F8.0 Figure 8: EVM versus Output Power, VCC = 5.0V Supply Current (mA) Supply Current versus Output Power 380 370 360 350 340 330 320 310 300 290 280 270 260 250 240 230 220 210 200 190 180 170 160 150 4920 MHz 5180 MHz 5500 MHz 5850 MHz 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 Output Power (dBm) 75025 F9.0 Figure 9: DC Current versus Output Power, VCC = 5.0V ©2013 Silicon Storage Technology, Inc. DS70005025C 11 05/13 4.9-5.9 GHz High-Linearity Power Amplifier SST11CP15E Data Sheet Test Conditions: VCC1,2 = 3.3V, VCC3 = 5.0V, TA = 25°C, VREG = 2.90V unless otherwise noted Power Gain versus Output Power 28 27 26 Power Gain (dB) 25 24 23 22 21 20 4920 MHz 19 5180 MHz 18 5500 MHz 17 5850 MHz 16 15 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 Output Power (dBm) 75025 F10.0 Figure 10:Gain versus Output Power, VCC = 5.0V Detector Voltage (V) Detector Voltage versus Output Power 1.50 1.40 1.30 1.20 1.10 1.00 0.90 0.80 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0.00 4920 MHz 5500 MHz 5500 MHz 5850 MHz 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 Output Power (dBm) 75025 F11.0 Figure 11:Output Power versus Input Power, VCC = 5.0V ©2013 Silicon Storage Technology, Inc. DS70005025C 12 05/13 4.9-5.9 GHz High-Linearity Power Amplifier SST11CP15E Data Sheet S12 versus Frequency 0 0 -5 -10 -10 -20 -15 -30 S12 (dB) S11 (dB) S11 versus Frequency -20 -25 -30 -50 -60 -35 -70 -40 -80 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 0.0 12.0 13.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 Frequency (GHz) Frequency (GHz) S21 versus Frequency S22 versus Frequency 40 0 30 -5 20 -10 S22 (dB) S21 (dB) -40 10 0 -10 -20 10.0 11.0 12.0 13.0 -15 -20 -25 -30 -30 -35 -40 0.0 -40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 Frequency (GHz) 12.0 13.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 Frequency (GHz) 75025 S-Parms.1.0 Figure 12:S-Parameters ©2013 Silicon Storage Technology, Inc. DS70005025C 13 05/13 4.9-5.9 GHz High-Linearity Power Amplifier SST11CP15E Data Sheet VCC1,2 VCC3 0.1 µF 0.1 µF 12 mil 146 mil 12 2.4 pF 4.7 µF 20 mil 11 Capacitor placement is measured from edge of PA to edge of capacitor. 10 50Ω RFIN 9 1 11CP15E 0.3 pF 300Ω VCCb 2X2 12L UQFN Top View 2 0.1 µF 68Ω 50Ω RFOUT 0.9 mm 0.5 pF 7 3 0Ω 50Ω 8 4 5 6 105Ω Test Conditions VCC=VCCb=3.3V, VREG = 2.85V VCC=VCCb=5.0V, VREG = 2.90V 200 pF DET VREG 75025 F13.3 Note: The SST11CP15E has on-chip DC-blocking caps on all RF ports The resistor on Vccb will improve dynamic EVM performance Figure 13:Typical Application for High-Linearity 802.11a/n/ac Application ©2013 Silicon Storage Technology, Inc. DS70005025C 14 05/13 4.9-5.9 GHz High-Linearity Power Amplifier SST11CP15E Data Sheet Product Ordering Information SST 11 CP 15E - QUBE XX XX XXX - XXXX Environmental Attribute E1 = non-Pb contact (lead) finish Package Modifier B = 12 contact Package Type QU = UQFN Product Family Identifier Product Type P = Power Amplifier Voltage C = 3.0-5.0V Frequency of Operation 1 = 4.9-5.9 GHz Product Line 1 = RF Products 1. Environmental suffix “E” denotes non-Pb solder. SST non-Pb solder devices are “RoHS Compliant”. Valid combinations for SST11CP15E SST11CP15E-QUBE SST11CP15E Evaluation Kits SST11CP15E-QUBE-K Note:Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. ©2013 Silicon Storage Technology, Inc. DS70005025C 15 05/13 4.9-5.9 GHz High-Linearity Power Amplifier SST11CP15E Data Sheet Packaging Diagrams TOP VIEW SIDE VIEW BOTTOM VIEW See notes 2 and 3 2.00 ±0.05 Pin #1 (laser engraved see note 2) Pin #1 0.075 2.00 ±0.05 0.92 0.4 BSC 0.265 0.165 0.05 Max 0.60 0.50 0.25 0.15 0.34 0.24 1mm 12-uqfn-2x2-QUB-2.0 Note: 1. 2. 3. 4. Similar to JEDEC JEP95 UQFN/USON variants, though number of contacts and some dimensions are different. The topside pin #1 indicator is laser engraved; its approximate shape and location is as shown. From the bottom view, the pin #1 indicator may be either a curved indent or a 45-degree chamfer. The external paddle is electrically connected to the die back-side and to VSS. This paddle must be soldered to the PC board; it is required to connect this paddle to the VSS of the unit. Connection of this paddle to any other voltage potential will result in shorts and electrical malfunction of the device. 5. Untoleranced dimensions are nominal target dimensions. 6. All linear dimensions are in millimeters (max/min). Figure 14:12-contact Ultra-thin Quad Flat No-lead (UQFN) SST Package Code: QUB ©2013 Silicon Storage Technology, Inc. DS70005025C 16 05/13 4.9-5.9 GHz High-Linearity Power Amplifier SST11CP15E Data Sheet Table 5:Revision History Revision Description Date A • Initial Release of Data Sheet Sep 2011 B • • • • • Added Figure 4 on page 8 Removed VREG values from all figure captions Revised Features Updated Table 3 and Table 4 on page 7 Revised Figure 13 on page 14 Oct 2012 C • • Updated “Features” on page 1 Updated Figure 13 May 2013 ISBN:978-1-62077-211-9 © 2013 Silicon Storage Technology, Inc–a Microchip Technology Company. All rights reserved. SST, Silicon Storage Technology, the SST logo, SuperFlash, MTP, and FlashFlex are registered trademarks of Silicon Storage Technology, Inc. MPF, SQI, Serial Quad I/O, and Z-Scale are trademarks of Silicon Storage Technology, Inc. All other trademarks and registered trademarks mentioned herein are the property of their respective owners. Specifications are subject to change without notice. Refer to www.microchip.com for the most recent documentation. For the most current package drawings, please see the Packaging Specification located at http://www.microchip.com/packaging. Memory sizes denote raw storage capacity; actual usable capacity may be less. SST makes no warranty for the use of its products other than those expressly contained in the Standard Terms and Conditions of Sale. For sales office locations and information, please see www.microchip.com. Silicon Storage Technology, Inc. A Microchip Technology Company www.microchip.com ©2013 Silicon Storage Technology, Inc. DS70005025C 17 05/13